1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
NPN Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage VCEO 32 Vdc
Collector–Base Voltage VCBO 32 Vdc
Emitter–Base Voltage VEBO 5.0 Vdc
Collector Current — Continuous IC100 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR–5 Board(1)
TA = 25°C
Derate above 25°C
PD225
1.8
mW
mW/°C
Thermal Resistance Junction to Ambient R
q
JA 556 °C/W
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
PD300
2.4
mW
mW/°C
Thermal Resistance Junction to Ambient R
q
JA 417 °C/W
Junction and Storage Temperature TJ, Tstg –55 to +150 °C
DEVICE MARKING
BCW60ALT1 = AA, BCW60BLT1 = AB, BCW60DLT1 = AD
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 2.0 mAdc, IE = 0) V(BR)CEO 32 — Vdc
Emitter–Base Breakdown Voltage
(IE = 1.0
m
Adc, IC = 0) V(BR)EBO 5.0 — Vdc
Collector Cutoff Current
(VCE = 32 Vdc)
(VCE = 32 Vdc, TA = 150°C)
ICES —
—20
20 nAdc
µAdc
Emitter Cutoff Current
(VEB = 4.0 Vdc, IC = 0) IEBO — 20 nAdc
1. FR–5 = 1.0
0.75
0.062 in.
2. Alumina = 0.4
0.3
0.024 in. 99.5% alumina.
Thermal Clad is a trademark of the Bergquist Company
Order this document
by BCW60ALT1/D
SEMICONDUCTOR TECHNICAL DATA
12
3
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
Motorola, Inc. 1996
COLLECTOR
3
1
BASE
2
EMITTER
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 10 µAdc, VCE = 5.0 Vdc) BCW60A
BCW60B
BCW60D
(IC = 2.0 mAdc, VCE = 5.0 Vdc) BCW60A
BCW60B
BCW60D
(IC = 50 mAdc, VCE = 1.0 Vdc) BCW60A
BCW60B
BCW60D
hFE 20
30
100
120
175
380
60
70
100
—
—
—
220
310
630
—
—
—
—
AC Current Gain
(VCE = 5.0 Vdc, IC = 2.0 mAdc, f = 1.0 kHz) BCW60A
BCW60B
BCW60D
hfe 125
175
350
250
350
700
—
Collector–Emitter Saturation Voltage
(IC = 50 mAdc, IB = 1.25 mAdc)
(IC = 10 mAdc, IB = 0.25 mAdc)
VCE(sat) —
—0.55
0.35
Vdc
Base–Emitter Saturation Voltage
(IC = 50 mAdc, IB = 1.25 mAdc)
(IC = 50 mAdc, IB = 0.25 mAdc)
VBE(sat) 0.7
0.6 1.05
0.85
Vdc
Base–Emitter On Voltage
(IC = 2.0 mAdc, VCE = 5.0 Vdc) VBE(on) 0.6 0.75 Vdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) fT125 — MHz
Output Capacitance
(VCE = 10 Vdc, IC = 0, f = 1.0 MHz) Cobo — 4.5 pF
Noise Figure
(VCE = 5.0 Vdc, IC = 0.2 mAdc, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz) NF — 6.0 dB
SWITCHING CHARACTERISTICS
Turn–On Time
(IC = 10 mAdc, IB1 = 1.0 mAdc) ton — 150 ns
Turn–Off Time
(IB2 = 1.0 mAdc, VBB = 3.6 Vdc, R1 = R2 = 5.0 kΩ, RL = 990 Ω)toff — 800 ns
Figure 1. Turn–On Time Figure 2. Turn–Off Time
EQUIVALENT SWITCHING TIME TEST CIRCUITS
*Total shunt capacitance of test jig and connectors
10 k
+3.0 V
275
CS < 4.0 pF*
10 k
+3.0 V
275
CS < 4.0 pF*
1N916
300 ns
DUTY CYCLE = 2% +10.9 V
–0.5 V
<1.0 ns
10 < t1 < 500
µ
s
DUTY CYCLE = 2% +10.9 V
0
–9.1 V <1.0 ns
t1
3
Motorola Small–Signal Transistors, FETs and Diodes Device Data
TYPICAL NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25°C)
Figure 3. Noise Voltage
f, FREQUENCY (Hz)
5.0
7.0
10
20
3.0
Figure 4. Noise Current
f, FREQUENCY (Hz)
2.010 20 50 100 200 500 1 k 2 k 5 k 10 k
100
50
20
10
5.0
2.0
1.0
0.5
0.2
0.1
BANDWIDTH = 1.0 Hz
RS = 0
IC = 1.0 mA
100
µ
A
en, NOISE VOLTAGE (nV)
In, NOISE CURRENT (pA)
30
µ
A
BANDWIDTH = 1.0 Hz
RS
≈ ∞
10
µ
A
300
µ
A
IC = 1.0 mA
300
µ
A100
µ
A
30
µ
A10
µ
A
10 20 50 100 200 500 1 k 2 k 5 k 10 k
NOISE FIGURE CONTOURS
(VCE = 5.0 Vdc, TA = 25°C)
Figure 5. Narrow Band, 100 Hz
IC, COLLECTOR CURRENT (
µ
A)
500 k
Figure 6. Narrow Band, 1.0 kHz
IC, COLLECTOR CURRENT (
µ
A)
10
2.0 dB
BANDWIDTH = 1.0 Hz
RS, SOURCE RESISTANCE (OHMS)
RS, SOURCE RESISTANCE (OHMS)
Figure 7. Wideband
IC, COLLECTOR CURRENT (
µ
A)
10
10 Hz to 15.7 kHz
RS, SOURCE RESISTANCE (OHMS)
Noise Figure is defined as:
NF
+
20 log10
ǒ
en2
)
4KTRS
)
In2RS2
4KTRS
Ǔ
1
ń
2
= Noise V oltage of the Transistor referred to the input. (Figure 3)
= Noise Current of the Transistor referred to the input. (Figure 4)
= Boltzman’s Constant (1.38 x 10–23 j/°K)
= Temperature of the Source Resistance (°K)
= Source Resistance (Ohms)
en
In
K
T
RS
3.0 dB 4.0 dB 6.0 dB 10 dB
50
100
200
500
1 k
10 k
5 k
20 k
50 k
100 k
200 k
2 k
20 30 50 70 100 200 300 500 700 1 k 10 20 30 50 70 100 200 300 500 700 1 k
500 k
100
200
500
1 k
10 k
5 k
20 k
50 k
100 k
200 k
2 k
1 M
500 k
50
100
200
500
1 k
10 k
5 k
20 k
50 k
100 k
200 k
2 k
20 30 50 70 100 200 300 500 700 1 k
BANDWIDTH = 1.0 Hz
1.0 dB
2.0 dB 3.0 dB
5.0 dB
8.0 dB
1.0 dB
2.0 dB 3.0 dB
5.0 dB
8.0 dB
4 Motorola Small–Signal Transistors, FETs and Diodes Device Data
TYPICAL STATIC CHARACTERISTICS
Figure 8. DC Current Gain
IC, COLLECTOR CURRENT (mA)
400
0.004
h , DC CURRENT GAIN
FE
TJ = 125
°
C
–55
°
C
25
°
C
VCE = 1.0 V
VCE = 10 V
Figure 9. Collector Saturation Region
IC, COLLECTOR CURRENT (mA)
1.4
Figure 10. Collector Characteristics
IC, COLLECTOR CURRENT (mA)
V, VOLTAGE (VOLTS)
1.0 2.0 5.0 10 20 50
1.6
100
TJ = 25
°
C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE(on) @ VCE = 1.0 V
*
q
VC for VCE(sat)
q
VB for VBE
0.1 0.2 0.5
Figure 11. “On” Voltages
IB, BASE CURRENT (mA)
0.4
0.6
0.8
1.0
0.2
0
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
0.002
TJ = 25
°
C
IC = 1.0 mA 10 mA 100 mA
Figure 12. Temperature Coefficients
50 mA
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
40
60
80
100
20
00
IC, COLLECTOR CURRENT (mA)
TA = 25
°
C
PULSE WIDTH = 300
µ
s
DUTY CYCLE
≤
2.0%
IB = 500
µ
A
400
µ
A
300
µ
A
200
µ
A
100
µ
A
*APPLIES for IC/IB
≤
hFE/2
25
°
C to 125
°
C
–55
°
C to 25
°
C
25
°
C to 125
°
C
–55
°
C to 25
°
C
40
60
0.006 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 5.0 10 15 20 25 30 35 40
1.2
1.0
0.8
0.6
0.4
0.2
0–2.4
0.8
0
–1.6
–0.8
1.0 2.0 5.0 10 20 50 100
0.1 0.2 0.5
200
100
80
V, TEMPERATURE COEFFICIENTS (mV/ C)
°θ
5
Motorola Small–Signal Transistors, FETs and Diodes Device Data
TYPICAL DYNAMIC CHARACTERISTICS
C, CAPACITANCE (pF)
Figure 13. Turn–On Time
IC, COLLECTOR CURRENT (mA)
300
Figure 14. Turn–Off Time
IC, COLLECTOR CURRENT (mA)
2.0 5.0 10 20 30 50
1000
Figure 15. Current–Gain — Bandwidth Product
IC, COLLECTOR CURRENT (mA)
Figure 16. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
Figure 17. Input Impedance
IC, COLLECTOR CURRENT (mA)
Figure 18. Output Admittance
IC, COLLECTOR CURRENT (mA)
3.01.0
500
0.5
10
t, TIME (ns)
t, TIME (ns)
f, CURRENT–GAIN BANDWIDTH PRODUCT (MHz)
T
h , OUTPUT ADMITTANCE ( mhos)
oe
m
hie, INPUT IMPEDANCE (k )
Ω
3.0
5.0
7.0
10
20
30
50
70
100
200
7.0 70 100
VCC = 3.0 V
IC/IB = 10
TJ = 25
°
C
td @ VBE(off) = 0.5 Vdc
tr
10
20
30
50
70
100
200
300
500
700
2.0 5.0 10 20 30 50
3.01.0 7.0 70 100
VCC = 3.0 V
IC/IB = 10
IB1 = IB2
TJ = 25
°
C
ts
tf
50
70
100
200
300
0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50
TJ = 25
°
C
f = 100 MHz
VCE = 20 V
5.0 V
1.0
2.0
3.0
5.0
7.0
0.1 0.2 0.5 1.0 2.0 5.0 10 20 500.05
TJ = 25
°
C
f = 1.0 MHz
Cib
Cob
2.0 5.0 10 20 50
1.0
0.2 100
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
0.1 0.2 0.5
hfe
≈
200 @ IC = 1.0 mA
VCE = 10 Vdc
f = 1.0 kHz
TA = 25
°
C
2.0 5.0 10 20 50
1.0
2.0 100
3.0
5.0
7.0
10
20
30
50
70
100
200
0.1 0.2 0.5
VCE = 10 Vdc
f = 1.0 kHz
TA = 25
°
C
hfe
≈
200 @ IC = 1.0 mA
6 Motorola Small–Signal Transistors, FETs and Diodes Device Data
Figure 19. Thermal Response
t, TIME (ms)
1.0
0.01
r(t) TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
0.7
0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k
D = 0.5
0.2
0.1
0.05
0.02
0.01 SINGLE PULSE
DUTY CYCLE, D = t1/t2
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1 (SEE AN–569)
Z
θ
JA(t) = r(t)
•
R
θ
JA
TJ(pk) – TA = P(pk) Z
θ
JA(t)
t1t2
P(pk)
FIGURE 19A
Figure 19A.
TJ, JUNCTION TEMPERATURE (
°
C)
104
–4
0
IC, COLLECTOR CURRENT (nA)
Figure 20.
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
400
2.0
IC, COLLECTOR CURRENT (mA)
DESIGN NOTE: USE OF THERMAL RESPONSE DATA
A train of periodical power pulses can be represented by the model
as shown in Figure 19A. Using the model and the device thermal
response the normalized effective transient thermal resistance of
Figure 19 was calculated for various duty cycles.
To find ZθJA(t), multiply the value obtained from Figure 19 by the
steady state value RθJA.
Example:
The MPS3904 is dissipating 2.0 watts peak under the following
conditions:
t1 = 1.0 ms, t2 = 5.0 ms. (D = 0.2)
Using Figure 19 at a pulse width of 1.0 ms and D = 0.2, the reading of
r(t) is 0.22.
The peak rise in junction temperature is therefore
∆T = r(t) x P(pk) x RθJA = 0.22 x 2.0 x 200 = 88°C.
For more information, see AN–569.
The safe operating area curves indicate IC–VCE limits of the
transistor that must be observed for reliable operation. Collector load
lines for specific circuits must fall below the limits indicated by the
applicable curve.
The data of Figure 20 is based upon TJ(pk) = 150°C; TC or TA is
variable depending upon conditions. Pulse curves are valid for duty
cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk) may be calculated from
the data in Figure 19. At high case or ambient temperatures, thermal
limitations will reduce the power that can be handled to values less
than the limitations imposed by second breakdown.
10–2
10–1
100
101
102
103
–2
00 +20 +40 +60 +80 +100 +120 +140 +160
VCC = 30 Vdc
ICEO
ICBO
AND
ICEX @ VBE(off) = 3.0 Vdc
TA = 25
°
C
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
1.0 ms 10
µ
s
TC = 25
°
C1.0 s
dc
dc
4.0
6.0
10
20
40
60
100
200
4.0 6.0 8.0 10 20 40
TJ = 150
°
C
100
µ
s
7
Motorola Small–Signal Transistors, FETs and Diodes Device Data
INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must
be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
SOT–23
mm
inches
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
SOT–23 POWER DISSIPATION
The power dissipation of the SOT–23 is a function of the
pad size. This can vary from the minimum pad size for
soldering to a pad size given for maximum power dissipation.
Power dissipation for a surface mount device is determined
by TJ(max), the maximum rated junction temperature of the
die, RθJA, the thermal resistance from the device junction to
ambient, and the operating temperature, TA. Using the
values provided on the data sheet for the SOT–23 package,
PD can be calculated as follows:
PD = TJ(max) – TA
RθJA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values into
the equation for an ambient temperature T A of 25°C, one can
calculate the power dissipation of the device which in this
case is 225 milliwatts.
PD = 150°C – 25°C
556°C/W = 225 milliwatts
The 556°C/W for the SOT–23 package assumes the use
of the recommended footprint on a glass epoxy printed circuit
board to achieve a power dissipation of 225 milliwatts. There
are other alternatives to achieving higher power dissipation
from the SOT–23 package. Another alternative would be to
use a ceramic substrate or an aluminum core board such as
Thermal Clad. Using a board material such as Thermal
Clad, an aluminum core board, the power dissipation can be
doubled using the same footprint.
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within a
short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
•Always preheat the device.
•The delta temperature between the preheat and
soldering should be 100°C or less.*
•When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering method,
the difference shall be a maximum of 10°C.
•The soldering temperature and time shall not exceed
260°C for more than 10 seconds.
•When shifting from preheating to soldering, the
maximum temperature gradient shall be 5°C or less.
•After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and result
in latent failure due to mechanical stress.
•Mechanical stress or shock should not be applied during
cooling.
* Soldering a device without preheating can cause excessive
thermal shock and stress which can result in damage to the
device.
8 Motorola Small–Signal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS
DJ
K
L
A
C
BS
H
GV
3
12
CASE 318–08
ISSUE AE
SOT–23 (TO–236AB)
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
DIM
AMIN MAX MIN MAX
MILLIMETERS
0.1102 0.1197 2.80 3.04
INCHES
B0.0472 0.0551 1.20 1.40
C0.0350 0.0440 0.89 1.11
D0.0150 0.0200 0.37 0.50
G0.0701 0.0807 1.78 2.04
H0.0005 0.0040 0.013 0.100
J0.0034 0.0070 0.085 0.177
K0.0180 0.0236 0.45 0.60
L0.0350 0.0401 0.89 1.02
S0.0830 0.0984 2.10 2.50
V0.0177 0.0236 0.45 0.60
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty , representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability , including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “T ypicals” must be validated for each customer application by customer’s technical experts. Motorola does
not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in
systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of
the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such
unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless
against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
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BCW60ALT1/D
◊
