TIP42C PNP PLANAR TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 2 of 3
www.unisonic.com.tw QW-R203-007.D
ABSOLUTE MAXIMUM RATING
PARAMETER SYMBOL RATINGS UNIT
Collector Base Voltage VCBO -100 V
Collector to Emitter Voltage VCEO -100 V
Emitter-Base Voltage VEBO -5 V
Collector Current (DC) IC -6 A
Collector Current (Pulse) IC -10 A
Base Current IB -2 A
TO-220/TO-263 65 W
Collector Dissipation (TC=25°C) TO-252 PC 20 W
Junction Temperature TJ +150 °C
Storage Temperature TSTG -65 ~ +150 °C
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TC=25°C)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector-Emitter Breakdown Voltage (Note) BVCEO I
C=-30mA, IB=0 -100 V
Collector Cutoff Current ICEO V
CE=-60V, IB=0 -0.7 mA
Collector Cutoff Current ICES V
CE=-100V, VEB=0 -400 μA
Emitter Cutoff Current IEBO V
BE=-5V, IC=0 -1 mA
Collector-Emitter Saturation Voltage (Note) VCE(SAT) IC=-6A, IB=-600mA -1.5 V
Base-Emitter on Voltage (Note) VBE(ON) V
CE=-4V, IC=-6A, -2.0 V
VCE=-4V, IC=-300mA 30
DC Current Gain (Note) hFE VCE=-4V, IC=-3A 15 75
Current Gain Bandwidth Product fT V
CE=-10V, IC=-500mA, f=1MHz 3 MHz
Note: Pulse Test: PW≤300μs, Duty Cycle≤2%