2SB1131T-AE - ON SEMICONDUCTOR

2SB1131

No.2420-1/4

Applications

•Flash, power supplies, relay drivers, lamp drivers.

Features

•Adoption of FBET, MBIT processes.

•Low saturation voltage.

•Large current capacity.

•High-speed switching.

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit

Collector-to-Base Voltage VCBO --25 V

Collector-to-Emitter Voltage VCEO --20 V

Emitter-to-Base Voltage VEBO --5 V

Collector Current IC--5 A

Collector Current (Pulse) ICP --8 A

Collector Dissipation PC1W

Junction Temperature Tj 150 °C

Storage Temperature Tstg --55 to +150 °C

Electrical Characteristics at Ta=25°C

Ratings

Parameter Symbol Conditions min typ max Unit

Collector Cutoff Current ICBO VCB=--20V, IE=0 --500 nA

Emitter Cutoff Current IEBO VEB=--4V, IC=0 --500 nA

DC Current Gain hFE1V

CE=--2V, IC=--500mA 100* 400*

hFE2V

CE=--2V, IC=--4A 60

Gain-Bandwidth Product fTVCE=--5V, IC=--200mA 320 MHz

* : The 2SB1131 is classified by 500mA hFE as follows : Continued on next page.

Ordering number : ENN2420C

32505TN (PC)/O2003TN (KOTO)/92098HA (KT)/8270MH/521TA, TS

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

2SB1131 PNP Epitaxial Planar Silicon Transistor

Flash, High-Current Switching

Applications

Rank R S T

hFE 100 to 200 140 to 280 200 to 400

2SB1131

No.2420-2/4

Ratings

Parameter Symbol Conditions min typ max Unit

Collector-to-Emitter Saturation Voltage VCE(sat) IC=--3A, IB=--60mA --250 --500 mV

Base-to-Emitter Saturation Voltage VBE(sat) IC=--3A, IB=--60mA --1.0 --1.3 V

Output Capacitance Cob VCB=--10V, f=1MHz 60 pF

Collector-to-Base Breakdown Voltage V(BR)CBO IC=(--)10µA, IE=0 --25 V

Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=(--)1mA, RBE=∞--20 V

Emitter-to-Base Breakdown Voltage V(BR)EBO IE=(--)10µA, IC=0 --5 V

Turn-ON Time ton See specified Test Circuit. 40 ns

Storage T ime tstg See specified Test Circuit. 200 ns

Fall T ime tfSee specified Test Circuit. 10 ns

Package Dimensions Switching Time Test Circuit

unit : mm

2006C

Continued from preceding page.

1 : Emitter

2 : Collector

3 : Base

SANYO : MP

123

0.5

0.5 0.5

0.6

1.45 1.45

6.0 4.7

5.0

3.0

1.0

8.5

14.0

VRRB

VCC=10VVBE= --5V

50Ω

INPUT

OUTPUT

5Ω

100µF 470µF

PW=20µsIB1

D.C.≤1% IB2

IC=10IB1= --10IB2=2A

--5

--3

--2

--4

--1

00 --0.4 --1.0--0.8--0.6--0.2

IC -- VCE

--10mA

--20mA

--30mA

--40mA

IB=0

ITR08956

0 --2 --6--5--4--1 --3

IC -- VCE

IB=0

ITR08957

From top

--100mA

--90mA

--80mA

--70mA

--60mA

--50mA

--2.0

--1.2

--0.8

--1.6

--0.4

--10mA

--12mA

--2mA

--4mA

--6mA

--8mA

Collector Current, IC–A

Collector-to-Emitter Voltage, VCE –V

Collector Current, IC–A

Collector-to-Emitter Voltage, VCE –V

2SB1131

No.2420-3/4

A S O

--1.0

--10

--0.1

5337253722

--1.0--0.1 --10

ICP=–8A

100ms

10ms

DC operation

1ms

IC=–5A

ITR08963

5--0.01 235 23 5 23 5

--0.1 --1.0 --10

IC / IB=50

VBE(sat) -- IC

--1.0

--10

ITR08962

1.2

1.0

0.6

0.8

0.2

0.4

2006040 80 100 140120 160

PC -- Ta

ITR08964

Cob -- VCB

100

372

--1.0 --10

537532

ITR08960

f=1MHz

Ta=25°C

Single pulse

--0.1 --1.0 23 523 523 55--10--0.01

--1000

--10

--100

VCE(sat) -- IC

ITR08961

IC / IB=50

Output Capacitance, Cob -- pF

Collector-to-Base Voltage, VCB -- V

Collector-to-Emitter

Saturation Voltage, VCE(sat) –mV

Collector Current, IC–A

Base-to-Emitter

Saturation Voltage, VBE(sat) –V

Collector Current, IC–ACollector-to-Emitter Voltage, VCE –V

Collector Current, IC–A

Collector Dissipation, P

–W

Ambient Temperature, Ta –˚C

hFE -- ICVCE= --2V

ITR08958

100

1000

10 --0.1 --1.0 3253253255--10--0.01

VCE= --5V

--0.1 --1.0 3253253255--10--0.01

fT -- IC

100

1000

ITR08959

DC Current Gain, hFE

Collector Current, IC–A

Gain-Bandwidth Product, fT–MHz

Collector Current, IC–A

2SB1131

No.2420-4/4PS

Specifications of any and all SANYO products described or contained herein stipulate the performance,

characteristics, and functions of the described products in the independent state, and are not guarantees

of the performance, characteristics, and functions of the described products as mounted in the customer’s

products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,

the customer should always evaluate and test devices mounted in the customer’s products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all

semiconductor products fail with some probability. It is possible that these probabilistic failures could

give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,

or that could cause damage to other property. When designing equipment, adopt safety measures so

that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective

circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or

contained herein are controlled under any of applicable local export control laws and regulations,

such products must not be exported without obtaining the export license from the authorities

concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or

mechanical, including photocopying and recording, or any information storage or retrieval system,

or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to

product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"

for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not

guaranteed for volume production. SANYO believes information herein is accurate and reliable, but

no guarantees are made or implied regarding its use or any infringements of intellectual property rights

or other rights of third parties.

This catalog provides information as of March, 2005. Specifications and information herein are subject

to change without notice.