AUTOMOTIVE GRADE Features Advanced Process Technology P-Channel MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * AUIRF5210S VDSS -100V RDS(on) max. 60m ID -38A D S Description Specifically designed for Automotive applications, this cellular design of HEXFET(R) Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.. Base part number D2Pak AUIRF5210S G Gate Standard Pack Form Quantity Tube 50 Tape and Reel Left 800 Package Type D2-Pak AUIRF5210S G D Drain S Source Orderable Part Number AUIRF5210S AUIRF5210STRL Absolute Maximum Ratings Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Symbol Parameter Max. ID @ TC = 25C Continuous Drain Current, VGS @ -10V -38 ID @ TC = 100C IDM PD @TA = 25C Continuous Drain Current, VGS @ -10V Pulsed Drain Current Maximum Power Dissipation -24 -140 3.1 PD @TC = 25C Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited) Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv./dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) VGS EAS IAR EAR dv/dt TJ TSTG Thermal Resistance Symbol RJC RJA Parameter Junction-to-Case Junction-to-Ambient ( PCB Mount, steady state) Units A 170 1.3 20 120 -23 17 -7.4 -55 to + 150 W W/C V mJ A mJ V/ns C 300 Typ. Max. Units --- 0.75 40 C/W HEXFET(R) is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2015-9-30 AUIRF5210S Static @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) gfs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Trans conductance IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. Max. Units Conditions -100 --- --- V VGS = 0V, ID = -250A --- -0.11 --- V/C Reference to 25C, ID = -1mA --- --- 60 m VGS = -10V, ID = -38A -2.0 --- -4.0 V VDS = VGS, ID = -250A 9.5 --- --- S VDS = -50V, ID = -23A --- --- -50 VDS = -100V, VGS = 0V A --- --- -250 VDS = -80V,VGS = 0V,TJ =125C --- --- -100 VGS = -20V nA --- --- 100 VGS = 20V Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise specified) Qg Qgs Qgd td(on) tr td(off) tf Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time --- --- --- --- --- --- --- 150 22 81 14 63 72 55 230 33 120 --- --- --- --- LD Internal Drain Inductance --- 4.5 --- LS Internal Source Inductance --- 7.5 --- --- --- --- 2780 800 430 --- --- --- Min. Typ. Max. Units --- --- -38 --- --- -140 --- --- --- --- -1.6 170 260 1180 1770 Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Diode Characteristics Parameter Continuous Source Current IS (Body Diode) Pulsed Source Current ISM (Body Diode) VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ton Forward Turn-On Time ID = -23A nC VDS = -80V VGS = -10V VDD = -50V ID = -23A ns RG= 2.4 VGS = -10V Between lead, 6mm (0.25in.) nH from package and center of die contact VGS = 0V pF VDS = -25V = 1.0MHz, See Fig. 5 Conditions MOSFET symbol showing the A integral reverse p-n junction diode. V TJ = 25C,IS = -23A,VGS = 0V ns TJ = 25C ,IF = -23A, VDD = -25V nC di/dt = -100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11) Limited by TJmax , starting TJ = 25C, L = 0.46mH, RG = 25, IAS = -23A.(See Fig.12) ISD -23A, di/dt -650A/s, VDD V(BR)DSS, TJ 150C. Pulse width 300s; duty cycle 2%. This is applied to D2Pak When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994 R is measured at TJ of approximately 90C. 2 2015-9-30 AUIRF5210S 1000 1000 100 BOTTOM TOP -ID, Drain-to-Source Current (A) -ID, Drain-to-Source Current (A) TOP VGS -15V -10V -8.0V -7.0V -6.0V -5.5V -5.0V -4.5V 100 10 -4.5V 1 BOTTOM 10 -4.5V 1 60s PULSE WIDTH 60s PULSE WIDTH Tj = 150C Tj = 25C 0.1 0.1 0.1 1 10 0.1 100 10 100 Fig. 2 Typical Output Characteristics Fig. 1 Typical Output Characteristics 2.0 R DS(on) , Drain-to-Source On Resistance (Normalized) 1000 -I D, Drain-to-Source Current (A) 1 -V DS, Drain-to-Source Voltage (V) -V DS, Drain-to-Source Voltage (V) T J = 25C 100 T J = 150C 10 1 VDS = -50V 60s PULSE WIDTH 0.1 2 4 6 8 10 12 14 -VGS, Gate-to-Source Voltage (V) Fig. 3 Typical Transfer Characteristics 3 VGS -15V -10V -8.0V -7.0V -6.0V -5.5V -5.0V -4.5V ID = -38A VGS = -10V 1.5 1.0 0.5 -60 -40 -20 0 20 40 60 80 100 120 140160 180 T J , Junction Temperature (C) Fig. 4 Normalized On-Resistance vs. Temperature 2015-9-30 AUIRF5210S 100000 12.0 VGS = 0V, f = 1 MHZ C iss = Cgs + Cgd, C ds SHORTED C rss = Cgd -V GS, Gate-to-Source Voltage (V) ID= -23A C, Capacitance(pF) C oss = Cds + Cgd 10000 C iss C oss 1000 C rss VDS = -80V VDS = -50V 10.0 VDS = -20V 8.0 6.0 4.0 2.0 0.0 100 1 10 0 100 Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 75 100 125 150 Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 1000 -I D, Drain-to-Source Current (A) 1000 -I SD, Reverse Drain Current (A) 50 QG, Total Gate Charge (nC) -VDS, Drain-to-Source Voltage (V) 100 T J = 150C 100 T J = 25C 10 OPERATION IN THIS AREA LIMITED BY R DS (on) 1 100sec 10 Tc = 25C Tj = 150C Single Pulse VGS = 0V 1msec 10msec 1 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 -VSD, Source-to-Drain Voltage (V) Fig. 7 Typical Source-to-Drain Diode Forward Voltage 4 25 1.8 1 10 100 1000 -VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 2015-9-30 AUIRF5210S 40 -I D, Drain Current (A) 35 30 25 20 Fig 10a. Switching Time Test Circuit 15 10 5 0 25 50 75 100 125 150 T C , Case Temperature (C) Fig 9. Maximum Drain Current vs. Case Temperature Fig 10b. Switching Time Waveforms 1 Thermal Response ( Z thJC ) D = 0.50 0.20 0.1 0.10 R1 R1 0.05 J 0.02 0.01 0.01 J 1 R2 R2 R3 R3 C 2 1 2 3 3 Ci= iRi Ci= iRi SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 C Ri (C/W) i (sec) 0.128309 0.000069 0.377663 0.001772 0.244513 0.010024 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 5 2015-9-30 AUIRF5210S Fig 12a. Unclamped Inductive Test Circuit EAS , Single Pulse Avalanche Energy (mJ) 500 ID TOP -8.7A -14A BOTTOM -23A 450 400 350 300 250 200 150 100 50 0 25 50 75 100 125 150 Starting T J , Junction Temperature (C) Fig 13. Maximum Avalanche Energy vs. Drain Current Fig 12b. Unclamped Inductive Waveforms Fig 14a. Gate Charge Waveform Fig 14b. Gate Charge Test Circuit 6 2015-9-30 AUIRF5210S Fig 15. Peak Diode Recovery dv/dt Test Circuit for P-Channel HEXFET(R) Power MOSFETs 7 2015-9-30 AUIRF5210S D2Pak (TO-263AB) Package Outline (Dimensions are shown in millimeters (inches)) D2Pak (TO-263AB) Part Marking Information Part Number AUF5210S YWWA IR Logo XX Date Code Y= Year WW= Work Week XX Lot Code 8 2015-9-30 AUIRF5210S D2Pak (TO-263AB) Tape & Reel Information (Dimensions are shown in millimeters (inches)) TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) FEED DIRECTION 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 11.60 (.457) 11.40 (.449) 0.368 (.0145) 0.342 (.0135) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 4.72 (.136) 4.52 (.178) 16.10 (.634) 15.90 (.626) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 9 60.00 (2.362) MIN. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 2015-9-30 AUIRF5210S Qualification Information Automotive (per AEC-Q101) Comments: This part number(s) passed Automotive qualification. Infineon's Industrial and Consumer qualification level is granted by extension of the higher Automotive level. Qualification Level Moisture Sensitivity Level D2-Pak Machine Model ESD Human Body Model Charged Device Model RoHS Compliant MSL1 Class M4 (+/-425V) AEC-Q101-002 Class H2 ( /-4000V) AEC-Q101-001 Class C5 ( /-1125V) AEC-Q101-005 Yes Highest passing voltage. Revision History Date 9/30/2015 Comments Updated datasheet with corporate template Corrected ordering table on page 1. Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 2015 All Rights Reserved. IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer's compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer's products and any use of the product of Infineon Technologies in customer's applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer's technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies' products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 10 2015-9-30