Rev.0 Aug. 01, 2008 page 1 of 4
HE7601SG
GaAlAs Infrared Emitting Diode ODE2059-00 (M)
Rev.0
Aug. 01, 2008
Description
The HE7601SG is a 770 nm band GaAlAs infrared emitting diode with a double heterojunction structure. It is suitable
as a light source for optical control devices and sensors.
Features
• High efficiency and high output power
1
Internal CircuitPackage Type
• HE7601SG: SG1
2
Absolute Maximum Ratings
(TC = 25°C)
Item Symbol Ratings Unit
Forward current IF 250 mA
Reverse voltage VR 3 V
Operating temperature Topr –20 to +60 °C
Storage temperature Tstg –40 to +90 °C
Optical and Electrical Characteristics
(TC = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Optical output power PO 30 — — mW —
Peak wavelength λp 740 770 800 nm IF = 200 mA
Spectral width Δλ — 50 60 nm IF = 200 mA
Forward voltage VF — — 2.5 V IF = 200 mA
Reverse current IR — — 100 μA VR = 3 V
Capacitance Ct — 30 — pF VR = 0 V, f = 1 MHz
Rise time tr — 10 — ns IF = 50 mA
Fall time tf — 10 — ns IF = 50 mA
HE7601SG
Rev.0 Aug. 01, 2008 page 2 of 4
Typical Characteristic Curves
50
40
30
20
10
00 50 100 150 200 250
Optical output power, P
O
(mW)
Forward current, I
F
(mA)
40°C
0°C
25°C
60°C
Optical Output Power vs. Forward Current
250
200
150
100
50
00 0.5 1.0 1.5 2.0 2.5
25°C
60°C
Forward current, I
F
(mA)
Forward voltage, V
F
(V)
Forward Current vs. Forward Voltage
100
80
60
40
20
0-40 -20 lp 20 40
Relative radiation intensity (%)
Wavelength, λ (nm)
Spectral Distribution
Relative intensity
20 ns/div
Current pulse
Optical pulse
Pulse Response
T
C
= -20°C
T
C
= -20°C
T
C
= 25°C T
C
= 25°C
60
30
90100 80 60 40 20 0 20 40 60 80
100
80
60
40
20
0
Relative radiation intensity (%) Angle, θ ( ° )
Relative radiation intensity (%)
Angle, θ ( ° )
Radiation Pattern
0
T
C
= 25°C
HE7601SG
Rev.0 Aug. 01, 2008 page 3 of 4
Package Dimensions
OPJ Code
JEDEC
JEITA
Mass
(reference value)
IR/SG1
—
—
0.25 g
2.54 ± 0.35
(2 – 1.05)
φ
1.0 ± 0.2
1.0 ± 0.2
45° ± 5°
φ5.4 ± 0.2
φ4.65 ± 0.2
φ4.0 ± 0.2
2 Ð 0.45 ± 0.1
φ
0.65 ± 0.2
2.7 ± 0.2
0.55 ± 0.2
14 ± 2
12
As of July, 2002
Unit: mm
HE7601SG
Rev.0 Aug. 01, 2008 page 4 of 4
Cautions
1. Opnext Japan,Inc.(OPJ) neither warrants nor grants licenses of any our rights or any third party’s patent, copyright,
trademark, or other intellectual property rights for information contained in this document. OPJ bears no
responsibility for problems that may arise with third party’s rights, includin g intellectual property rights, in
connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have received the
latest product standards or specifications before final design, purchase or use.
3. OPJ makes every attempt to ensure that its products are of high quality and reliability. However, contact our sales
office before using the product in an application that demands especially high quality and reliability or where its
failure or malfunction may directly threaten hum an life or cause risk of bodily injury, such as aerospace,
aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for
life support.
4. Design your application so that the product is used within the ranges guaranteed by OPJ particularly for maximum
rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics.
OPJ bears no responsibility for failure or damage wh en used beyond the guaranteed ranges. Even within the
guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and
employ systemic measures such as fail-safes, so that the equipment incorporating OPJ product does not cause bodily
injury, fire or other consequential damage due to operation of the OPJ product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to rep roduce or duplicate, in any form, the whole or part of this document without written
approval from OPJ.
7. Contact our sales office for any questions regarding this document or OPJ products.
1. The laser light is harmful to human body especially to eye no matter what directly or indirectly. The laser beam
shall be observed or adjusted through infrared camera or equivalent.
2. This product contains gallium arsenide (GaAs), which may seriously endanger your health even at very low doses.
Please avoid treatment which may create GaAs powder or gas, such as disassembly or performing chemical
experiments, when you handle the product.
When disposing of the product, please follow the laws of your country and separate it from other waste such as
industrial waste and household garbage.
3. Definition of items shown in this CAS is in accordance with that shown in Opto Device Databook issued by OPJ
unless otherwise specified.
Sales Offices
Op
next Ja
p
an, Inc
.
Taka
g
i Bld
g
., 3F, 1-3-9, Iwamoto-cho, Chi
y
oda-ku, Tok
y
o 101-0032, Japan
Tel: (03) 3865-5591
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