WBFBP-06C
(2×2×0.5)
unit: mm
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-06C Plastic-Encapsulate Diode
FBAS70BRW
SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS
DESCRIPTION
Silicon epitaxial planar
PN Junction Guard Ring for Schottky Diode
FEATURES
z Low Forward Voltage Drop
z Fast Switching
z Ultra-Small Surface Mount Package
APPLICATION
For General Purpose Switching Applications, rectifiers
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
BAS70BRW
Marking:K75
Maximum Ratings @TA=25
Parameter Symbol
Limits Unit
Peak Repetitive Peak reverse voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
70 V
Forward Continuous Current IF 70 mA
Peak forward surge current @<1.0s IFSM 100 mA
Power Dissipation Pd 150 mW
Thermal Resistance Junction to Ambient RθJA 625 ℃/W
Junction temperature TJ 125 ℃
Storage temperature range TSTG -55 to +125 ℃
Electrical Ratings @TA=25℃
Parameter Symbol Min. Typ. Max. Unit Conditions
VF1 0.41 V IF=1mA
Forward voltage VF2
1 V IF=15mA
Reverse curre nt IR
100 nA VR=50V
Capacitance between terminals CT
2 pF VR=0V,f=1MHz
Reverse Recovery Time trr 5 ns IF=IR=10mA
Irr=0.1XIR,RL=100Ω
1
Typical Characteristics
Min. Max. Min. Max.
A 0.450 0.550 0.018 0.022
A1 0.000 0.100 0.000 0.004
b 0.150 0.250 0.006 0.010
D 1.900 2.100 0.075 0.083
E 1.900 2.100 0.075 0.083
D1
E1
e
L
k
z
0.420 REF.
0.400 REF. 0.016 REF.
0.300 REF. 0.012 REF.
0.017 REF.
0.500 REF. 0.020 REF.
Symbol Dim ensi ons In M i l li met er s Dim ensions I n I nches
0.650 TYP. 0.026 TYP.
0.420 REF. 0.017 REF.
APPLICATION CIRCUITS
Bridge rectifiers
