©
1997
DATA SHEET
BIPOLAR ANALOG INTEGRATED CIRCUIT
µ
PC324
LOW POWER QUAD OPERATIONAL AMPLIFIER
DESCRIPTION
The
µ
PC324 is a quad operational amplifier which is
designed to operate from a single power supply over a
wide range of voltages. Operation from split power
supplies is also possible and the power supply current
drain is very low. Further advantage, the input common-
mode voltage can also swing to ground in the linear
mode.
Document No. G11763EJ3V0DS00 (3rd edition)
(Previous No. IC-1985)
Date Published April 1997 N
Printed in Japan
FEATURES
• Internal frequency compensation
• Wide output voltage swing V– to V+–1.5 V
• Common Mode input voltage range includes V–
• Wide supply range
3 V to 30 V (Single)
±1.5 V to ±15 V (Split)
• Output short circuit protection
EQUIVALENT CIRCUIT (1/4 Circuit) PIN CONFIGURATION (Top View)
The mark shows major revised points.
The information in this document is subject to change without notice.
ORDERING INFORMATION
Part Number Package
µ
PC324C 14-pin plastic DIP (300 mil)
µ
PC324G2 14-pin plastic SOP (225 mil)
OUTPUT
V
+
V
–
I
I
I
N
Q
2
Q
1
Q
9
Q
10
Q
11
Q
13
Q
6
Q
5
Q
7
Q
12
Q
4
Q
3
Q
8
R
SC
C
C
6 A 6 A
100 A
50 A
µ
µ
µµ
1
2
3
4
5
6
7
14
13
12
11
10
9
8
OUT1
I
I1
I
N1
V
+
I
N2
I
I2
OUT2
OUT4
I
I4
I
N4
V
–
I
N3
I
I3
OUT3
14
23
– +
– +
+ –
+ –
PC324C, 324G2
µ
µ
PC324
2
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Parameter Symbol Ratings Unit
Voltage between V+ and V–Note 1 V+–V––0.3 to +32 V
Differential Input Voltage VID ±32 V
Input Voltage Note 2 VIV––0.3 to V–+32 V
Output Voltage Note 3 VOV––0.3 to V++0.3 V
Power Dissipation C Package Note 4 PT570 mW
G2 Package Note 5 550 mW
Output Short Circuit Duration Note 6 Indefinite sec
Operating Ambient Temperature TA–20 to +80 °C
Storage Temperature Tstg –55 to + 125 °C
Notes 1. Reverse connection of supply voltage can cause destruction.
2. The input voltage should be allowed to input without damage or destruction independent of the
magnitude of V+. Either input signal should not be allowed to go negative by more than 0.3 V. The normal
operation will establish when the both inputs are within the Common Mode Input Voltage Range of
electrical characteristics.
3. This specification is the voltage which should be allowed to supply to the output terminal from external
without damage or destructive. Even during the transition period of supply voltage, power on/off etc.,
this specification should be kept. The output voltage of normal operation will be the Output Voltage Swing
of electrical characteristics.
4. Thermal derating factor is –7.6 mW/°C when operating ambient temperature is higher than 50 °C.
5. Thermal derating factor is –5.5 mW/°C when operating ambient temperature is higher than 25 °C.
6. Pay careful attention to the total power dissipation not to exceed the absolute maximum ratings, Note
4 and Note 5.
RECOMMENDED OPERATING CONDITIONS
Parameter Symbol MIN. TYP. MAX. Unit
Supply Voltage (Split) V±±1.5 ±15 V
Supply Voltage (V– = GND) V+330V
ELECTRICAL CHARACTERISTICS (TA = 25 °C, V+ = 5 V, V– = GND)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Input Offset Voltage VIO RS = 0 Ω±2±7mV
Input Offset Current IIO ±5±50 nA
Input Bias Current Note 7 IB45 250 nA
Large Single Voltage Gain AVRL ≥ 2 kΩ25 100 V/mV
Supply Current ICC RL = ∞, IO = 0 A, All Amplifiers 1.0 2 mA
Common Mode Rejection Ratio
CMR 65 85 dB
Supply Voltage Rejection Ratio SVR 65 100 dB
Output Voltage Swing VORL = 2 kΩ (Connect to GND) 0 V+ – 1.5 V
Common Mode Input Voltage Range
VICM 0V
+
– 1.5 V
Output Current (SOURCE) IO SOURCE
VIN + = +1 V, VIN– = 0 V
20 40 mA
Output Current (SINK) IO SINK
VIN – = +1 V, VIN+ = 0 V
10 20 mA
VIN– = +1 V, VIN+ = 0 V,
VO = 200 mV 12 50
µ
A
Channel Separation f = 1 kHz to 20 kHz 120 dB
Notes 7. Input bias currents flow out from IC. Because each currents are base current of PNP-transistor on input
stage.
µ
PC324
3
TYPICAL PERFORMANCE CHARACTERISTICS (TA = 25 °C, TYP.)
1000
800
600
400
200
4
3
2
1
0 20 40 60 80 100 0 10 20 30 40
T
A
- Operating Ambient Temperature - °C
P
T
- Total Power Dissipation - mW
POWER DISSIPATION
I
CC
- Supply Current - mA
SUPPLY CURRENT
V+ - Supply Voltage - V (V– = GND)
T
A
= –20 °C
T
A
= 0 to 70 °C
324G2
324C
100
75
50
25
0 10 20 30 40
V+ - Supply Voltage - V (V– = GND)
I
B
- Input Bias Current - nA
INPUT BIAS CURRENT
T
A
= +25 °C
–
+
A
V
+
I
CC
3
2
1
0 010 20 30 50
V
IO
- Input Offset Voltage - mV
INPUT OFFSET VOLTAGE
V+ - Supply Voltage - V (V– = GND)
T
A
= 25 °C
0 40 100–50
–4
–3
–2
–1
1
0
2
3
4
5 INPUT OFFSET VOLTAGE
V
+
= 5 V
T
A
- Operating Ambient Temperature - °C
100
80
60
40
20
0
–50 0 50 100
INPUT BIAS CURRENT
T
A
- Operating Ambient Temperature - °C
V
+
= +15 V
V
–
= GND
V
IO
- Input Offset Voltage - mV
I
B
- Input Bias Current - nA
µ
PC324
4
140
120
100
80
60
40
20
01 10 100 1 k 10 k 100 k 1 M 10 M
f - Frequency - Hz
OPEN LOOP FREQUENCY RESPONSE
A
V
- Open Loop Voltage Grain - dB
V
+
= 10 to 15 V
V
+
= 30 V
V
+
/2
V
O
V
+
V
IN
0.1 F
10 MΩ
+
–
20
15
10
5
0
1 k 3 5 10 k 30 50 100 k 300 500 1 M
LARGE SIGNAL FREQUENCY RESPONSE
V
om
- Output Voltage Swing - V
p-p
V
O
V
IN
100 kΩ
1 kΩ+15 V
7 V +
–
2 kΩ
160
120
80
40
70
60
50
40
30
0 10203040
–20 6020 80
OPEN LOOP VOLTAGE GAIN
T
A
- Operating Ambient Temperature - °C
I
O SHORT
- Output Short Circuit Current - mA
OUTPUT SHORT CIRCUIT CURRENT
040
I
O SHORT
–
+
V
+
- Supply Voltage - V (V
–
= GND)
R
L
= 20 kΩ
R
L
= 2 kΩ
µ
f - Frequency - Hz
A
V
- Open Voltage Gain - dB
OUTPUT SINK CURRENT LIMIT
V
O
- Output Voltage - V
10
1.0
0.1
0.01
0.01 0.1 1.0 10 100
I
O
SINK
- Output Sink Current - mA
V
+
= 15 V
–
+V
O
V
+
/2
V
+
I
O
SINK
OUTPUT SOURCE CURRENT LIMIT
∆V
O
- Output Voltage to V
+
- V
5
4
1
0
0.01 0.1 1.0 10 100
I
O
SOURCE
- Output Source Current - mA
+
–I
O
SOURCE
V
+
/2
V
+
∆V
O
3
2
µ
PC324
5
4
3
2
1
0
3
2
1
0 20 40 60 80
Time - s
R
L
≥ 2 kΩ
V
+
= 15 V
Input
Voltage - V Output
Voltage - V
120
100
80
60
40
20
0
100 1 k 10 k 100 k 1 M
f - Frequency - Hz
CMR - Common Mode Rejection Ratio - dB
COMMON MODE REJECTION RATIO
0.2
–50 0 50 100
T
A
- Operating Ambient Temperature - °C
SR - Slew Rate - V/ s
SLEW RATE
0.3
0.1
0
V
±
= ±15 V
V
O
= ±10 V
SR
–
SR
+
VOLTAGE FOLLOWER PULSE RESPONSE
µ
µ
µ
PC324
6
PACKAGE DRAWINGS
14PIN PLASTIC DIP (300 mil)
ITEM MILLIMETERS INCHES
NOTES
1) Each lead centerline is located within 0.25 mm (0.01 inch) of
its true position (T.P.) at maximum material condition.
P14C-100-300B1-1
N 0.25 0.01
R 0~15 ° 0~15°
A 20.32 MAX. 0.800 MAX.
B 2.54 MAX. 0.100 MAX.
F 1.2 MIN. 0.047 MIN.
G 3.6±0.3 0.142±0.012
J 5.08 MAX. 0.200 MAX.
K 7.62 (T.P.) 0.300 (T.P.)
C 2.54 (T.P.) 0.100 (T.P.)
D 0.50±0.10 0.020
+0.004
–0.005
H 0.51 MIN. 0.020 MIN.
I 4.31 MAX. 0.170 MAX.
L 6.4 0.252
M 0.25 0.010
+0.004
–0.003
+0.10
–0.05
2) ltem "K" to center of leads when formed parallel.
M
R
M
I
H
G F
D N
C
B
K
1 7
14 8
L
A
J
µ
PC324
7
14 PIN PLASTIC SOP (225 mil)
A
C
D M
G
NOTE
Each lead centerline is located within 0.12 mm (0.005 inch) of
its true position (T.P.) at maximum material condition.
P
detail of lead end
M
1 7
14 8
F
E
B
H
I
K
L
J
N
ITEM MILLIMETERS INCHES
A
B
C
E
F
G
H
I
J
10.46 MAX.
1.27 (T.P.)
1.8 MAX.
1.49
6.5±0.3
1.42 MAX.
0.12
1.1
4.4
M
0.1±0.1
N
0.412 MAX.
0.056 MAX.
0.004±0.004
0.071 MAX.
0.059
0.256±0.012
0.173
0.043
0.005
0.050 (T.P.)
S14GM-50-225B, C-4
P 3 ° 3°
+7°
D 0.40 0.016
+0.10
–0.05
K 0.15 0.006
+0.10
–0.05
L 0.6±0.2 0.024
0.10
–3° +7°
–3°
0.004
+0.008
–0.009
+0.004
–0.002
+0.004
–0.003
µ
PC324
8
RECOMMENDED SOLDERING CONDITIONS
When soldering this product, it is highly recommended to observe the conditions as shown below. If other soldering
processes are used, or if the soldering is performed under different conditions, please make sure to consult with our
sales offices.
For more details, refer to our document “SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL”
(C10535E).
Surface mount device
µ
PC324G2: 14-pin plastic SOP (225 mil)
Process Conditions Symbol
Infrared ray reflow Peak temperature: 230 °C or below (Package surface temperature), IR30-00-1
Reflow time: 30 seconds or less (at 210 °C or higher),
Maximum number of reflow processes: 1 time.
Vapor Phase Soldering Peak temperature: 215 °C or below (Package surface temperature), VP15-00-1
Reflow time: 40 seconds or less (at 200 °C or higher),
Maximum number of reflow processes: 1 time.
Wave Soldering Solder temperature: 260 °C or below, Flow time: 10 seconds or less, WS60-00-1
Maximum number of flow processes: 1 time,
Pre-heating temperature: 120 °C or below (Package surface temperature).
Partial heating method Pin temperature: 300 °C or below, –
Heat time: 3 seconds or less (Per each side of the device).
Caution Apply only one kind of soldering condition to a device, except for “partial heating method”, or
the device will be damaged by heat stress.
Through-hole device
µ
PC324C: 14-pin plastic DIP (300 mil)
Process Conditions
Wave soldering Solder temperature: 260 °C or below,
(only to leads) Flow time: 10 seconds or less.
Partial heating method Pin temperature: 300 °C or below,
Heat time: 3 seconds or less (per each lead.)
Caution For through-hole device, the wave soldering process must be applied only to leads, and make
sure that the package body does not get jet soldered.
µ
PC324
9
REFERENCE DOCUMENTS
QUALITY GRADES ON NEC SEMICONDUCTOR DEVICES C11531E
SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL C10535E
IC PACKAGE MANUAL C10943X
GUIDE TO QUALITY ASSUARANCE FOR SEMICONDUCTOR DEVICES MEI-1202
SEMICONDUCTORS SELECTION GUIDE X10679E
NEC SEMICONDUCTOR DEVICE RELIABILITY/ IEI-1212
QUALITY CONTROL SYSTEM - STANDARD LINEAR IC
µ
PC324
10
[MEMO]
µ
PC324
11
[MEMO]
µ
PC324
2
[MEMO]
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from use of a device described herein or any other liability arising from use
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
Anti-radioactive design is not implemented in this product.
M4 96.5
