BLS7G3135L-350P; BLS7G3135LS-350P LDMOS S-band radar power transistor Rev. 4 -- 1 September 2015 Product data sheet 1. Product profile 1.1 General description 350 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range. Table 1. Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s; = 10 %; IDq = 200 mA; in a class-AB production test circuit. Test signal pulsed RF f VDS PL Gp D tr tf (GHz) (V) (W) (dB) (%) (ns) (ns) 3.1 32 350 12 43 5 5 3.3 32 350 12 43 5 5 3.5 32 350 10 39 5 5 1.2 Features and benefits Easy power control Integrated ESD protection High flexibility with respect to pulse formats Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (3.1 GHz to 3.5 GHz) Internally matched for ease of use Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications S-Band power amplifiers for radar applications in the 3.1 GHz to 3.5 GHz frequency range BLS7G3135L(S)-350P LDMOS S-band radar power transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol BLS7G3135L-350P (SOT539A) 1 drain1 2 drain2 3 gate1 4 gate2 5 1 1 2 5 3 3 4 5 4 [1] source 2 sym117 BLS7G3135LS-350P (SOT539B) 1 drain1 2 drain2 3 gate1 4 gate2 5 1 1 2 5 3 3 4 5 4 [1] source 2 sym117 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLS73135L-350P - flanged balanced ceramic package; 2 mounting holes; 4 leads SOT539A BLS73135LS-350P - earless flanged balanced ceramic package; 4 leads SOT539B 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Min Max Unit VDS drain-source voltage - 65 V VGS gate-source voltage 0.5 +11 V Tstg storage temperature 65 +150 C - 225 C Tj [1] BLS7G3135L-350P_7G3135LS-350P#4 Product data sheet junction temperature [1] Continuous use at maximum temperature will affect the reliability. For details refer to the on-line MTF calculator. All information provided in this document is subject to legal disclaimers. Rev. 4 -- 1 September 2015 (c) Ampleon The Netherlands B.V. 2015. All rights reserved. 2 of 13 BLS7G3135L(S)-350P LDMOS S-band radar power transistor 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Zth(j-mb) Conditions transient thermal impedance from junction to Tcase = 85 C; PL = 350 W mounting base tp = 300 s; = 10 % Typ Unit 0.1 K/W tp = 100 s; = 20 % 0.09 K/W tp = 100 s; = 10 % 0.07 K/W tp = 200 s; = 10 % 0.09 K/W 6. Characteristics Table 6. DC characteristics Tj = 25 C unless otherwise specified. BLS7G3135L-350P_7G3135LS-350P#4 Product data sheet Symbol Parameter Conditions Min Typ Max Unit V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 2.2 mA 65 - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 220 mA 1.5 1.9 2.3 V IDSS drain leakage current VGS = 0 V; VDS = 28 V - - 2.8 A IDSX drain cut-off current VGS = VGS(th) + 3.75 V; VDS = 10 V - 39 - A IGSS gate leakage current VGS = 11 V; VDS = 0 V - - 280 nA gfs forward transconductance VDS = 10 V; ID = 11 A - 16.2 - S RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 7.7 A - 0.065 - All information provided in this document is subject to legal disclaimers. Rev. 4 -- 1 September 2015 (c) Ampleon The Netherlands B.V. 2015. All rights reserved. 3 of 13 BLS7G3135L(S)-350P LDMOS S-band radar power transistor Table 7. RF characteristics Test signal: pulsed RF; tp = 300 s; = 10 %; RF performance at VDS = 32 V; IDq = 200 mA; Tcase = 25 C; unless otherwise specified, in a class-AB production circuit. Symbol Parameter Conditions Min Typ Max Unit PL = 350 W 10.5 12 - dB At frequency of 3.1 GHz Gp power gain RLin input return loss PL = 350 W - 6 - dB D drain efficiency PL = 350 W 38 43 - % Pdroop(pulse) pulse droop power PL = 350 W - 0.2 0.3 dB tr rise time PL = 350 W - 5 50 ns tf fall time PL = 350 W - 5 50 ns At frequency of 3.3 GHz Gp power gain PL = 350 W 10.5 12 - dB RLin input return loss PL = 350 W - 6 - dB D drain efficiency PL = 350 W 38 43 - % Pdroop(pulse) pulse droop power PL = 350 W - 0.2 0.3 dB tr rise time PL = 350 W - 5 50 ns tf fall time PL = 350 W - 5 50 ns At frequency of 3.5 GHz Gp power gain PL = 320 W 8.5 10 - dB RLin input return loss PL = 320 W - 9 - dB D drain efficiency PL = 320 W 35 39 - % Pdroop(pulse) pulse droop power PL = 320 W - 0.2 0.3 dB tr rise time PL = 320 W - 5 50 ns tf fall time PL = 320 W - 5 50 ns 7. Application information 7.1 Ruggedness in class-AB operation The BLS7G3135L-350P and the BLS7G3135LS-350P are capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 32 V; IDq = 200 mA; PL = 350 W; tp = 300 s; = 10 % BLS7G3135L-350P_7G3135LS-350P#4 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 -- 1 September 2015 (c) Ampleon The Netherlands B.V. 2015. All rights reserved. 4 of 13 BLS7G3135L(S)-350P LDMOS S-band radar power transistor 7.2 Impedance information Table 8. Typical impedance Measured load-pull data. Typical values unless otherwise specified. ZS[1] f ZL[1] (GHz) () () 3.1 1.8 7.2j 3.6 6.3j 3.2 1.6 7.1j 4.4 6.7j 3.3 2.2 8.2j 4.8 5.8j 3.4 3.1 9.7j 5.7 6.2j 3.5 3.6 11.6j 6.5 4.6j [1] Impedances are taken at a single half of the push-pull transistor. drain 1 gate 1 ZS ZL gate 2 drain 2 Fig 1. 001aak544 Definition of transistor impedance 7.3 Test circuit information 40 mm 40 mm R1 C4 C6 C13 C3 C8 C10 C11 C1 58 mm C9 C12 C2 R2 C5 C7 C14 aaa-007977 Printed-Circuit Board (PCB): Rogers 3006; r = 6.15; thickness = 0.64 mm; thickness copper plating = 35 m See Table 9 for a list of components. Fig 2. BLS7G3135L-350P_7G3135LS-350P#4 Product data sheet Test circuit layout All information provided in this document is subject to legal disclaimers. Rev. 4 -- 1 September 2015 (c) Ampleon The Netherlands B.V. 2015. All rights reserved. 5 of 13 BLS7G3135L(S)-350P LDMOS S-band radar power transistor Table 9. List of components For test circuit see Figure 2. Component Description Value Remarks C1, C2, C3 multilayer ceramic chip capacitor 8.2 pF ATC100A C4, C5, C11 multilayer ceramic chip capacitor 15 pF ATC800B C6, C7 multilayer ceramic chip capacitor 100 pF ATC800A C8, C9 multilayer ceramic chip capacitor 1 F, 50 V TDK C10, C12 multilayer ceramic chip capacitor 10 F, 50 V TDK C13, C14 electrolytic capacitor 220 F, 63 V R1, R2 SMD resistor 10 7.4 Graphical data aaa-007978 13 Gp (dB) 50 Gp 12 aaa-007979 13 D (%) Gp (dB) 40 40 (1) (1) (2) (2) (3) (3) 11 D 9 8 48 50 D (%) 12 (1) (1) (2) (2) (3) (3) 10 52 54 56 PL (dBm) 30 11 20 10 10 9 0 8 58 30 D 0 VDS = 32 V; IDq = 200 mA. 100 (2) f = 3300 MHz (2) f = 3300 MHz (3) f = 3500 MHz 300 400 PL (W) 0 500 (3) f = 3500 MHz Power gain and drain efficiency as function of output power; typical values Product data sheet 200 VDS = 32 V; IDq = 200 mA. (1) f = 3100 MHz BLS7G3135L-350P_7G3135LS-350P#4 20 10 (1) f = 3100 MHz Fig 3. 50 Gp Fig 4. Power gain and drain efficiency as function of output power; typical values All information provided in this document is subject to legal disclaimers. Rev. 4 -- 1 September 2015 (c) Ampleon The Netherlands B.V. 2015. All rights reserved. 6 of 13 BLS7G3135L(S)-350P LDMOS S-band radar power transistor aaa-009191 500 PL (W) aaa-009192 43 D (%) 400 42 300 (1) (2) (3) 41 200 40 100 0 0 5 10 15 20 25 30 35 Pi (W) 39 2900 3000 3100 3200 3300 3400 3500 3600 3700 f (MHz) 40 VDS = 32 V; IDq = 200 mA; tp =300 s; = 10 %. VDS = 32 V; IDq = 200 mA; tp = 300 s; = 10 %; PL = 350 W. (1) f = 3100 MHz (2) f = 3300 MHz (3) f = 3500 MHz Fig 5. Output power as a function of input power; typical values aaa-009193 14 Gp (dB) Fig 7. Fig 6. Drain efficiency as a function of frequency; typical values aaa-009194 10 RLin (dB) 13 8 12 6 11 4 10 2 9 2900 3000 3100 3200 3300 3400 3500 3600 3700 f (MHz) 0 2900 3000 3100 3200 3300 3400 3500 3600 3700 f (MHz) VDS = 32 V; IDq = 200 mA; tp = 300 s; = 10 %; PL = 350 W. VDS = 32 V; IDq = 200 mA; tp = 300 s; = 10 %; PL = 350 W. Power gain as a function of frequency; typical values BLS7G3135L-350P_7G3135LS-350P#4 Product data sheet Fig 8. Input return loss as a function of frequency; typical values All information provided in this document is subject to legal disclaimers. Rev. 4 -- 1 September 2015 (c) Ampleon The Netherlands B.V. 2015. All rights reserved. 7 of 13 BLS7G3135L(S)-350P LDMOS S-band radar power transistor 8. Package outline Flanged balanced ceramic package; 2 mounting holes; 4 leads SOT539A D A F D1 U1 B q C w2 M C M H1 1 c 2 E1 p H U2 5 L 3 A E w1 M A M B M 4 w3 M b Q e 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A mm 4.7 4.2 inches b c D D1 e E E1 11.81 0.18 31.55 31.52 9.50 13.72 11.56 0.10 30.94 30.96 9.30 9.53 9.27 F H H1 L 1.75 17.12 25.53 3.48 1.50 16.10 25.27 2.97 p Q q 3.30 3.05 2.26 2.01 35.56 U1 U2 w1 41.28 10.29 0.25 41.02 10.03 w2 w3 0.51 0.25 0.185 0.465 0.007 1.242 1.241 0.374 0.375 0.069 0.674 1.005 0.137 0.130 0.089 1.625 0.405 1.400 0.010 0.020 0.010 0.540 0.165 0.455 0.004 1.218 1.219 0.366 0.365 0.059 0.634 0.995 0.117 0.120 0.079 1.615 0.395 Note 1. millimeter dimensions are derived from the original inch dimensions. 2. recommended screw pitch dimension of 1.52 inch (38.6 mm) based on M3 screw. OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 10-02-02 12-05-02 SOT539A Fig 9. EUROPEAN PROJECTION Package outline SOT539A BLS7G3135L-350P_7G3135LS-350P#4 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 -- 1 September 2015 (c) Ampleon The Netherlands B.V. 2015. All rights reserved. 8 of 13 BLS7G3135L(S)-350P LDMOS S-band radar power transistor Earless flanged balanced ceramic package; 4 leads SOT539B D A F 5 D1 D U1 H1 w2 1 c D 2 E1 U2 H E L 3 4 w3 b Q e 0 5 10 mm scale Dimensions Unit(1) A b 4.7 11.81 w2 w3 0.25 0.25 max 0.185 0.465 0.007 1.242 1.241 0.374 0.375 0.069 0.674 1.005 0.137 0.089 1.275 0.405 0.54 inches nom 0.01 min 0.165 0.455 0.004 1.218 1.219 0.366 0.365 0.059 0.634 0.995 0.117 0.079 1.265 0.395 0.01 mm max nom min c D D1 0.18 31.55 31.52 E E1 9.5 9.53 e F H H1 L Q U1 U2 1.75 17.12 25.53 3.48 2.26 32.39 10.29 1.50 16.10 25.27 2.97 2.01 32.13 10.03 13.72 4.2 11.56 0.10 30.94 30.96 9.3 9.27 Note 1. millimeter dimensions are derived from the original inch dimensions. Outline version References IEC JEDEC JEITA sot539b_po European projection Issue date 12-05-02 13-05-24 SOT539B Fig 10. Package outline SOT539B BLS7G3135L-350P_7G3135LS-350P#4 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 -- 1 September 2015 (c) Ampleon The Netherlands B.V. 2015. All rights reserved. 9 of 13 BLS7G3135L(S)-350P LDMOS S-band radar power transistor 9. Handling information CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. 10. Abbreviations Table 10. Abbreviations Acronym Description ESD ElectroStatic Discharge LDMOS Laterally Diffused Metal Oxide Semiconductor S-Band Short wave band SMD Surface Mounted Device VSWR Voltage Standing-Wave Ratio 11. Revision history Table 11. Revision history Document ID Release date Data sheet status BLS73135L-350P_7G3135LS-350P#4 20150901 Product data sheet Modifications: Change notice Supersedes BLS73135L-350P_7G31 35LS-350P v.3 * The format of this document has been redesigned to comply with the new identity guidelines of Ampleon. * Legal texts have been adapted to the new company name where appropriate. BLS73135L-350P_7G3135LS-350P v.3 20131029 Product data sheet - BLS73135L-350P_ 7G3135LS-350P v.2 BLS73135L-350P_7G3135LS-350P v.2 20130801 Objective data sheet - BLS73135L-350P_ 7G3135LS-350P v.1 BLS73135L-350P_7G3135LS-350P v.1 20121012 Objective data sheet - - BLS7G3135L-350P_7G3135LS-350P#4 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 -- 1 September 2015 (c) Ampleon The Netherlands B.V. 2015. All rights reserved. 10 of 13 BLS7G3135L(S)-350P LDMOS S-band radar power transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. Definition [1] Please consult the most recently issued document before initiating or completing a design. [2] The term `short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.ampleon.com. 12.2 Definitions Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. Ampleon does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local Ampleon sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 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Suitability for use -- Ampleon products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an BLS7G3135L-350P_7G3135LS-350P#4 Product data sheet Ampleon product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Ampleon and its suppliers accept no liability for inclusion and/or use of Ampleon products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. Ampleon makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using Ampleon products, and Ampleon accepts no liability for any assistance with applications or customer product design. It is customer's sole responsibility to determine whether the Ampleon product is suitable and fit for the customer's applications and products planned, as well as for the planned application and use of customer's third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. Ampleon does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer's applications or products, or the application or use by customer's third party customer(s). Customer is responsible for doing all necessary testing for the customer's applications and products using Ampleon products in order to avoid a default of the applications and the products or of the application or use by customer's third party customer(s). Ampleon does not accept any liability in this respect. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale -- Ampleon products are sold subject to the general terms and conditions of commercial sale, as published at http://www.ampleon.com/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. Ampleon hereby expressly objects to applying the customer's general terms and conditions with regard to the purchase of Ampleon products by customer. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control -- This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. All information provided in this document is subject to legal disclaimers. Rev. 4 -- 1 September 2015 (c) Ampleon The Netherlands B.V. 2015. All rights reserved. 11 of 13 BLS7G3135L(S)-350P LDMOS S-band radar power transistor Non-automotive qualified products -- Unless this data sheet expressly states that this specific Ampleon product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. Ampleon accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without Ampleon' warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond Ampleon' specifications such use shall be solely at customer's own risk, and (c) customer fully indemnifies Ampleon for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond Ampleon' standard warranty and Ampleon' product specifications. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Any reference or use of any `NXP' trademark in this document or in or on the surface of Ampleon products does not result in any claim, liability or entitlement vis-a-vis the owner of this trademark. Ampleon is no longer part of the NXP group of companies and any reference to or use of the `NXP' trademarks will be replaced by reference to or use of Ampleon's own Any reference or use of any `NXP' trademark in this document or in or on the surface of Ampleon products does not result in any claim, liability or entitlement vis-a-vis the owner of this trademark. Ampleon is no longer part of the NXP group of companies and any reference to or use of the `NXP' trademarks will be replaced by reference to or use of Ampleon's own trademarks. Translations -- A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 13. Contact information For more information, please visit: http://www.ampleon.com BLS7G3135L-350P_7G3135LS-350P#4 Product data sheet For sales office addresses, please visit: http://www.ampleon.com/sales All information provided in this document is subject to legal disclaimers. Rev. 4 -- 1 September 2015 (c) Ampleon The Netherlands B.V. 2015. All rights reserved. 12 of 13 BLS7G3135L(S)-350P LDMOS S-band radar power transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 7.3 7.4 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 4 Ruggedness in class-AB operation . . . . . . . . . 4 Impedance information . . . . . . . . . . . . . . . . . . . 5 Test circuit information . . . . . . . . . . . . . . . . . . . 5 Graphical data . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Handling information. . . . . . . . . . . . . . . . . . . . 10 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Contact information. . . . . . . . . . . . . . . . . . . . . 12 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'. (c) Ampleon The Netherlands B.V. 2015. All rights reserved. For more information, please visit: http://www.ampleon.com For sales office addresses, please visit: http://www.ampleon.com/sales Date of release: 1 September 2015 Document identifier: BLS7G3135L-350P_7G3135LS-350P#4