BLS7G3135LS-350P,1 - AMPLEON

1. Product profile

1.1 General description

350 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz

range.

1.2 Features and benefits

Easy power control

Integrated ESD protection

High flexibility with respect to pulse formats

Excellent ruggedness

High efficiency

Excellent thermal stability

Designed for broadband operation (3.1 GHz to 3.5 GHz)

Internally matched for ease of use

Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

1.3 Applications

S-Band power amplifiers for radar applications in the 3.1 GHz to 3.5 GHz frequency

range

BLS7G3135L-350P;

BLS7G3135LS-350P

LDMOS S-band radar power transistor

Rev. 4 — 1 September 2015 Product data sheet

Table 1. Typical performance

Typical RF performance at Tcase =25



C; tp = 300





= 10 %; IDq = 200 mA; in a class-AB

production test circuit.

Test signal f VDS PLGpDtrtf

(GHz) (V) (W) (dB) (%) (ns) (ns)

pulsed RF 3.1 32 350 12 43 5 5

3.3 32 350 12 43 5 5

3.5 32 350 10 39 5 5

Product data sheet Rev. 4 — 1 September 2015 2 of 13

BLS7G3135L(S)-350P

LDMOS S-band radar power transistor

2. Pinning information

[1] Connected to flange.

3. Ordering information

4. Limiting values

[1] Continuous use at maximum temperature will affect the reliability. For details refer to the on-line MTF

calculator.

Table 2. Pinning

Pin Description Simplified outline Graphic symbol

BLS7G3135L-350P (SOT539A)

1drain1

2drain2

3gate1

4gate2

5source [1]

BLS7G3135LS-350P (SOT539B)

1drain1

2drain2

3gate1

4gate2

5source [1]

sym117

Table 3. Ordering information

Type number Package

Name Description Version

BLS73135L-350P - flanged balanced ceramic package; 2 mounting holes;

4 leads

SOT539A

BLS73135LS-350P - earless flanged balanced ceramic package; 4 leads SOT539B

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Min Max Unit

VDS drain-source voltage - 65 V

VGS gate-source voltage 0.5 +11 V

Tstg storage temperature 65 +150 C

Tjjunction temperature [1] - 225 C

Product data sheet Rev. 4 — 1 September 2015 3 of 13

BLS7G3135L(S)-350P

LDMOS S-band radar power transistor

5. Thermal characteristics

6. Characteristics

Table 5. Thermal characteristics

Symbol Parameter Conditions Typ Unit

Zth(j-mb) transient thermal impedance from junction to

mounting base

Tcase =85C; PL= 350 W

tp= 300 s;  = 10 % 0.1 K/W

tp= 100 s;  = 20 % 0.09 K/W

tp= 100 s;  = 10 % 0.07 K/W

tp= 200 s;  = 10 % 0.09 K/W

Table 6. DC characteristics

Tj=25



C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

V(BR)DSS drain-source breakdown

voltage

VGS =0V; I

D=2.2mA 65 - - V

VGS(th) gate-source threshold voltage VDS =10 V; I

D= 220 mA 1.5 1.9 2.3 V

IDSS drain leakage current VGS =0V; V

DS =28V - - 2.8 A

IDSX drain cut-off current VGS =V

GS(th) + 3.75 V;

VDS =10V

-39-A

IGSS gate leakage current VGS =11V; V

DS = 0 V - - 280 nA

gfs forward transconductance VDS =10V; I

D=11A - 16.2 - S

RDS(on) drain-source on-state

resistance

VGS =V

GS(th) +3.75 V;

ID=7.7A

- 0.065 - 

Product data sheet Rev. 4 — 1 September 2015 4 of 13

BLS7G3135L(S)-350P

LDMOS S-band radar power transistor

7. Application information

7.1 Ruggedness in class-AB operation

The BLS7G3135L-350P and the BLS7G3135LS-350P are capable of withstanding a load

mismatch corresponding to VSWR = 10 : 1 through all phases under the following

conditions: VDS =32V; I

Dq = 200 mA; PL = 350 W; tp=300s; =10%

Table 7. RF characteristics

Test signal: pulsed RF; tp = 300





= 10 %; RF performance at VDS =32V; I

Dq =200mA;

Tcase =25



C; unless otherwise specified, in a class-AB production circuit.

Symbol Parameter Conditions Min Typ Max Unit

At frequency of 3.1 GHz

Gppower gain PL= 350 W 10.5 12 - dB

RLin input return loss PL= 350 W - 6- dB

Ddrain efficiency PL= 350 W 38 43 - %

Pdroop(pulse) pulse droop power PL= 350 W - 0.2 0.3 dB

trrise time PL= 350 W - 5 50 ns

tffall time PL= 350 W - 5 50 ns

At frequency of 3.3 GHz

Gppower gain PL= 350 W 10.5 12 - dB

RLin input return loss PL= 350 W - 6- dB

Ddrain efficiency PL= 350 W 38 43 - %

Pdroop(pulse) pulse droop power PL= 350 W - 0.2 0.3 dB

trrise time PL= 350 W - 5 50 ns

tffall time PL= 350 W - 5 50 ns

At frequency of 3.5 GHz

Gppower gain PL= 320 W 8.5 10 - dB

RLin input return loss PL= 320 W - 9- dB

Ddrain efficiency PL= 320 W 35 39 - %

Pdroop(pulse) pulse droop power PL= 320 W - 0.2 0.3 dB

trrise time PL= 320 W - 5 50 ns

tffall time PL= 320 W - 5 50 ns

Product data sheet Rev. 4 — 1 September 2015 5 of 13

BLS7G3135L(S)-350P

LDMOS S-band radar power transistor

7.2 Impedance information

[1] Impedances are taken at a single half of the push-pull transistor.

7.3 Test circuit information

Table 8. Typical impedance

Measured load-pull data. Typical values unle s s otherwise specified.

f ZS[1] ZL[1]

(GHz) () ()

3.1 1.8  7.2j 3.6  6.3j

3.2 1.6  7.1j 4.4  6.7j

3.3 2.2  8.2j 4.8  5.8j

3.4 3.1  9.7j 5.7  6.2j

3.5 3.6  11.6j 6.5  4.6j

Fig 1. Definition of transistor impedance

001aak544

gate 1

gate 2

drain 2

drain 1

Printed-Circuit Board (PCB): Rogers 3006; r = 6.15; thickness = 0.64 mm;

thickness copper plating = 35 m

See Table 9 for a list of components.

Fig 2. Test circuit layout

58 mm

C2 C7

C11

C14

C12

C13

C10

40 mm 40 mm

aaa-007977

Product data sheet Rev. 4 — 1 September 2015 6 of 13

BLS7G3135L(S)-350P

LDMOS S-band radar power transistor

7.4 Graphical data

Table 9. List of components

For test circuit see Figure 2.

Component Description Value Remarks

C1, C2, C3 multilayer ceramic chip capacitor 8.2 pF ATC100A

C4, C5, C11 multilayer ceramic chip capacitor 15 pF ATC800B

C6, C7 multilayer ceramic chip capacitor 100 pF ATC800A

C8, C9 multilayer ceramic chip capacitor 1 F, 50 V TDK

C10, C12 multilayer ceramic chip capacitor 10 F, 50 V TD K

C13, C14 electrolytic capacitor 220 F, 63 V

R1, R2 SMD resistor 10 

VDS = 32 V; IDq = 200 mA.

(1) f = 3100 MHz

(2) f = 3300 MHz

(3) f = 3500 MHz

VDS = 32 V; IDq = 200 mA.

(1) f = 3100 MHz

(2) f = 3300 MHz

(3) f = 3500 MHz

Fig 3. Power gain and drain efficiency as function of

output power; typical values

Fig 4. Power gain and drain efficiency as function of

output power; typical values

aaa-007978

48 50 52 54 56 58

910

10 20

11 30

12 40

13 50

PL (dBm)

(dB)(dB)(dB)

ηD

(%)(%)(%)

(1)(1)(1)

(2)(2)(2)

(3)(3)(3)

(1)(1)(1)

(2)(2)(2)

(3)(3)(3)

ηD

aaa-007979

0 100 200 300 400 500

910

10 20

11 30

12 40

13 50

PL (W)

(dB)(dB)(dB)

ηD

(%)(%)(%)

(1)(1)(1)

(2)(2)(2)

(3)(3)(3)

(1)(1)(1)

(2)(2)(2)

(3)(3)(3)

ηD

Product data sheet Rev. 4 — 1 September 2015 7 of 13

BLS7G3135L(S)-350P

LDMOS S-band radar power transistor

VDS = 32 V; IDq = 200 mA; tp =300 s; =10%.

(1) f = 3100 MHz

(2) f = 3300 MHz

(3) f = 3500 MHz

VDS = 32 V; IDq = 200 mA; tp = 300 s; =10%;

PL= 350 W.

Fig 5. Output power as a function of input power;

typical values

Fig 6. Drain efficiency as a function of frequency;

typical values

VDS = 32 V; IDq = 200 mA; tp = 300 s; =10%;

PL= 350 W.

VDS = 32 V; IDq = 200 mA; tp = 300 s; =10%;

PL= 350 W.

Fig 7. Power gain as a function of frequency; typical

values

Fig 8. Input return loss as a function of frequency;

typical values

aaa-009191

0 5 10 15 20 25 30 35 40

100

200

300

400

500

Pi (W)

(W)(W)(W)

(1)(1)(1)

(2)(2)(2)

(3)(3)(3)

aaa-009192

2900 3000 3100 3200 3300 3400 3500 3600 3700

f (MHz)

ηD

(%)(%)(%)

aaa-009193

2900 3000 3100 3200 3300 3400 3500 3600 3700

f (MHz)

(dB)(dB)(dB)

aaa-009194

2900 3000 3100 3200 3300 3400 3500 3600 3700

f (MHz)

RLinin

RLin

(dB)(dB)(dB)

Product data sheet Rev. 4 — 1 September 2015 8 of 13

BLS7G3135L(S)-350P

LDMOS S-band radar power transistor

8. Package outline

Fig 9. Package outline SOT539A

REFERENCES

OUTLINE

VERSION

EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC EIAJ

SOT539A 12-05-02

10-02-02

0 5 10 mm

scale

w1AB

M M M

M M

w2C

UNIT A

11.81

11.56

0.18

0.10

31.55

30.94 13.72 9.53

9.27

17.12

16.10

10.29

10.03

4.7

4.2

ce U2

0.25

0.25 0.51

35.56

1.75

1.50

41.28

41.02

25.53

25.27

3.30

3.05

2.26

2.01

9.50

9.30

inches 0.465

0.455

0.007

0.004

1.242

1.218

31.52

30.96

1.241

1.219 0.540 0.375

0.365

0.674

0.634

0.405

0.395

0.185

0.165

0.010

0.010 0.0201.400

0.069

0.059

1.625

1.615

1.005

0.995

0.130

0.120

0.089

0.079

0.374

0.366

3.48

2.97

0.137

0.117

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

Flanged balanced ceramic package; 2 mounting holes; 4 leads SOT539A

Note

1. millimeter dimensions are derived from the original inch dimensions.

2. recommended screw pitch dimension of 1.52 inch (38.6 mm) based on M3 screw.

Product data sheet Rev. 4 — 1 September 2015 9 of 13

BLS7G3135L(S)-350P

LDMOS S-band radar power transistor

Fig 10. Package outline SOT539B

References

Outline

version

European

projection Issue date

IEC JEDEC JEITA

SOT539B

sot539b_po

12-05-02

13-05-24

Unit(1)

max

nom

min

4.7

4.2

11.81

11.56

31.55

30.94

31.52

30.96

9.5

9.3

9.53

9.27

1.75

1.50

17.12

16.10

3.48

2.97

10.29

10.03

0.25

Dimensions

Earless flanged balanced ceramic package; 4 leads SOT539B

0.18

0.10

1EE

13.72

FHH

25.53

25.27

2.26

2.01

32.39

32.13

U2w2

0.25

inches

max

nom

min

0.185

0.165

0.465

0.455

1.242

1.218

1.241

1.219

0.374

0.366

0.375

0.365

0.069

0.059

0.674

0.634

0.137

0.117

0.405

0.395

0.01

0.007

0.004

0.54

1.005

0.995

0.089

0.079

1.275

1.265

0.01

0 5 10 mm

scale

Dw2

1 2

3 4

Note

1. millimeter dimensions are derived from the original inch dimensions.

Product data sheet Rev. 4 — 1 September 2015 10 of 13

BLS7G3135L(S)-350P

LDMOS S-band radar power transistor

9. Handling information

10. Abbreviations

11. Revision history

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling

electrostatic sensitive devices.

Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or

equivalent standards.

Table 10. Abbreviations

Acronym Description

ESD ElectroStatic Discharge

LDMOS Laterally Diffused Metal Oxide Semiconductor

S-Band Short wave band

SMD Surface Mounted Device

VSWR Voltage Standing-Wave Ratio

Table 11. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BLS73135L-350P_7G3135LS-350P#4 20150901 Product data sheet BLS73135L-350P_7G31

35LS-350P v.3

Modifications: •The format of this document has been redesigned to comply with the new

identity guidelines of Ampleon.

•Legal texts have been adapted to the new company name where appropriate.

BLS73135L-350P_7G3135LS-350P v.3 20131029 Product data sheet - BLS73135L-350P_

7G3135LS-350P v.2

BLS73135L-350P_7G3135LS-350P v.2 20130801 Objective data sheet - BLS73135L-350P_

7G3135LS-350P v.1

BLS73135L-350P_7G3135LS-350P v.1 20121012 Objective data sheet - -

Product data sheet Rev. 4 — 1 September 2015 11 of 13

BLS7G3135L(S)-350P

LDMOS S-band radar power transistor

12. Legal information

12.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Definitions”.

[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.ampleon.com.

12.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. Ampleon does not give any representations or

warranties as to the accuracy or completeness of information included herein

and shall have no liability for the consequences of use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is intended

for quick reference only and should not be relied upon to contain detailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local Ampleon sales office. In

case of any inconsistency or conflict with the short data sheet, the full data

sheet shall prevail.

Product specification — The information and data provided in a Product

data sheet shall define the specification of the product as agreed between

Ampleon and its customer, unless Ampleon and customer have explicitly

agreed otherwise in writing. In no event however, shall an agreement be valid

in which the Ampleon product is deemed to offer functions and qualities

beyond those described in the Product data sheet.

12.3 Disclaimers

Limited warranty and liability — Information in this document is believed to

be accurate and reliable. However, Ampleon does not give any

representations or warranties, expressed or implied, as to the accuracy or

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consequences of use of such information. Ampleon takes no responsibility for

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special or consequential damages (including - without limitation - lost profits,

lost savings, business interruption, costs related to the removal or

replacement of any products or rework charges) whether or not such

damages are based on tort (including negligence), warranty, breach of

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Notwithstanding any damages that customer might incur for any reason

whatsoever, Ampleon’ aggregate and cumulative liability towards customer

for the products described herein shall be limited in accordance with the

Terms and conditions of commercial sale of Ampleon.

Right to make changes — Ampleon reserves the right to make changes to

information published in this document, including without limitation

specifications and product descriptions, at any time and without notice. This

document supersedes and replaces all information supplied prior to the

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Suitability for use — Ampleon products are not designed, authorized or

warranted to be suitable for use in life support, life-critical or safety-critical

systems or equipment, nor in applications where failure or malfunction of an

Ampleon product can reasonably be expected to result in personal injury,

death or severe property or environmental damage. Ampleon and its

suppliers accept no liability for inclusion and/or use of Ampleon products in

such equipment or applications and therefore such inclusion and/or use is at

the customer’s own risk.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. Ampleon makes no representation

or warranty that such applications will be suitable for the specified use without

further testing or modification.

Customers are responsible for the design and operation of their applications

and products using Ampleon products, and Ampleon accepts no liability for

any assistance with applications or customer product design. It is customer’s

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fit for the customer’s applications and products planned, as well as for the

planned application and use of customer’s third party customer(s). Customers

should provide appropriate design and operating safeguards to minimize the

risks associated with their applications and products.

Ampleon does not accept any liability related to any default, damage, costs or

problem which is based on any weakness or default in the customer’s

applications or products, or the application or use by customer’s third party

customer(s). Customer is responsible for doing all necessary testing for the

customer’s applications and products using Ampleon products in order to

avoid a default of the applications and the products or of the application or

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liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanently and irreversibly affect

the quality and reliability of the device.

Terms and conditions of commercial sale — Ampleon products are sold

subject to the general terms and conditions of commercial sale, as published

at http://www.ampleon.com/terms, unless otherwise agreed in a valid written

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hereby expressly objects to applying the customer’s general terms and

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Export control — This document as well as the item(s) described herein

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Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contains data from the objective specification for product development.

Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.

Product [short] data sheet Production This document contains the product specification.

Product data sheet Rev. 4 — 1 September 2015 12 of 13

BLS7G3135L(S)-350P

LDMOS S-band radar power transistor

Non-automotive qualified products — Unless this data sheet expressly

states that this specific Ampleon product is automotive qualified, the product

is not suitable for automotive use. It is neither qualified nor tested in

accordance with automotive testing or application requirements. Ampleon

accepts no liability for inclusion and/or use of non-automotive qualified

products in automotive equipment or applications.

In the event that customer uses the product for design-in and use in

automotive applications to automotive specifications and standards, customer

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automotive applications, use and specifications, and (b) whenever customer

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Notice: All referenced brands, product names, service names and trademarks

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entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of

the NXP group of companies and any reference to or use of the ‘NXP’

trademarks will be replaced by reference to or use of Ampleon’s own Any

reference or use of any ‘NXP’ trademark in this document or in or on the

surface of Ampleon products does not result in any claim, liability or

entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of

the NXP group of companies and any reference to or use of the ‘NXP’

trademarks will be replaced by reference to or use of Ampleon’s own

trademarks.

13. Contact information

For more information, please visit:

http://www.ampleon.com

For sales office addresses, please visit:

http://www.ampleon.com/sales

BLS7G3135L(S)-350P

LDMOS S-band radar power transistor

For more information, please visit: http://www.ampleon.com

For sales office addresses, please visit: http://www.ampleon.com/sales

Date of release: 1 September 2015

Document identifier: BLS7G3135L-350P_7G3135LS-350P#4

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

14. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2

4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Thermal characteristics . . . . . . . . . . . . . . . . . . 3

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3

7 Application information. . . . . . . . . . . . . . . . . . . 4

7.1 Ruggedness in class-AB operation . . . . . . . . . 4

7.2 Impedance information . . . . . . . . . . . . . . . . . . . 5

7.3 Test circuit information . . . . . . . . . . . . . . . . . . . 5

7.4 Graphical data . . . . . . . . . . . . . . . . . . . . . . . . . 6

8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8

9 Handling information. . . . . . . . . . . . . . . . . . . . 10

10 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 10

11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10

12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11

12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11

12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

12.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12

13 Contact information. . . . . . . . . . . . . . . . . . . . . 12

14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13