TIPP115, TIPP116, TIPP117 PNP SILICON POWER DARLINGTONS 20 W Pulsed Power Dissipation 100 V Capability 2 A Continuous Collector Current 4 A Peak Collector Current LP PACKAGE (TOP VIEW) E 1 2 3 C B MDTRAB absolute maximum ratings at 25C case temperature (unless otherwise noted) RATING SYMBOL TIPP115 Collector-base voltage (IE = 0) TIPP116 -80 V -100 TIPP115 TIPP116 UNIT -60 V CBO TIPP117 Collector-emitter voltage (IB = 0) VALUE -60 VCEO TIPP117 -80 V -100 VEBO -5 V IC -2 A ICM -4 A IB -50 mA Continuous device dissipation at (or below) 25C case temperature (see Note 2) Ptot 0.8 W Pulsed power dissipation (see Note 3) PT 20 W Operating junction temperature range Tj -55 to +150 C Tstg -55 to +150 C TL 260 C Emitter-base voltage Continuous collector current Peak collector current (see Note 1) Continuous base current Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. This value applies for tp 0.3 ms, duty cycle 10%. 2. Derate linearly to 150C case temperature at the rate of 0.32 W/C. 3. VCE = 20 V, IC = 1 A, PW = 10 ms, duty cycle 2%. MAY 1989 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 TIPP115, TIPP116, TIPP117 PNP SILICON POWER DARLINGTONS electrical characteristics at 25C case temperature PARAMETER V(BR)CEO ICEO ICBO IEBO hFE V CE(sat) VBE VEC Collector-emitter breakdown voltage TEST CONDITIONS MIN TIPP115 IC = -10 mA IB = 0 (see Note 4) TYP MAX TIPP116 -80 TIPP117 -100 V VCE = -30 V VBE = 0 TIPP115 -2 VCE = -40 V VBE = 0 TIPP116 -2 VCE = -50 V VBE = 0 TIPP117 -2 VCE = -60 V IB = 0 TIPP115 -1 VCE = -80 V IB = 0 TIPP116 -1 VCE = -100 V IB = 0 TIPP117 -1 VEB = -5 V IC = 0 Forward current VCE = -4 V IC = -1 A transfer ratio VCE = -4 V IC = -2 A -8 mA IC = -2 A VCE = -4 V IE = -4 A Collector-emitter cut-off current Collector-base cut-off current Emitter cut-off current Collector-emitter saturation voltage Base-emitter voltage Parallel diode forward voltage IB = UNIT -60 mA mA -2 mA (see Notes 4 and 5) -2.5 V IC = -2 A (see Notes 4 and 5) -2.8 V IB = 0 (see Notes 4 and 5) -3.5 V 1000 (see Notes 4 and 5) 500 NOTES: 4. These parameters must be measured using pulse techniques, tp = 300 s, duty cycle 2%. 5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. 2 MAY 1989 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.