© 1987
SILICO N SWITCHING DIODE
1SS304
HIGH SPEED SWITCHING
SILICON EPITAXIAL DOUBLE DIODE : COMMON CATHODE
DATA SHEET
Document No. D16309EJ2V0DS00 (2nd edition)
(Previous No. DC-2101)
Date Published July 2002 NS CP(K)
Printed in Japan
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
FEATURES
•Low capacitance: Ct = 1.1 pF TYP.
•High speed switching: trr = 3.0 ns MAX.
•Wide applications including switching, limitter, clipper.
•Double diode configuration assures economical use.
ABSOLUTE MAXIMUM RATINGS
Maximum Voltages and Currents (TA = 25°C)
Peak Reverse Voltage VRM 75 V
DC Reverse Vo ltage VR50 V
Surge Current (1
µ
s) Note IFSM 6.0 A
Surge Current (1
µ
s) IFSM 4.0 A
Peak Forward Current Note IFM 450 mA
Peak Forward Current IFM 300 mA
Average Rectified Current Note IO150 mA
Average Rectified Current IO100 mA
Maximum Temperatures
Junction Temperature Tj150 °C
Storage Temperature Range Tstg –55 to + 150 °C
Thermal Resistance
Junction to Ambient Note Rth(j-a) 1.0 °C/mW
Junction to Ambient Rth(j-a) 0.85 °C/mW
Note Both diodes loaded simultaneously.
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTE RISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
VF1 IF = 10 mA 0.67 1.0 V
VF2 IF = 50 mA 0.75 1.1 V
Forward Voltage
VF3 IF = 100 mA 0.85 1.2 V
Reverse Current IRVR = 50 V 0.1
µ
A
Capacitance CtVR = 0 V, f = 1.0 MHz 1.1 4.0 pF
Reverse Recovery T i me trr See Test Circuit. 3.0 ns
PACKAGE DIMENSIONS (Unit: mm)
2.1±0.1
1.25±0.1
2.0±0.20.9±0.1
3
Marking
2
1
0.3
+0.1
−0
0.15
+0.1
−0.05
0.3
0.65
0 to 0.1
0.3 0.65
+0.1
−0
CONNECTION DIAGRAM (Top View)
2
1
3
1. Anode
2. Anode
3. Cathode
Marking : A6
Data Sheet D16309EJ2V0DS
2
1SS304
TYPICAL CHARACTERISTICS (TA = 25°C)
FORWARD CURRENT vs.
FORW ARD V OLTAGE
V
F
- Forward Voltage - V
0 0.2 0.4 0.6 0.8 1.0 1.2
0.1
0.2
0.5
1
2
5
10
20
50
100
I
F
- Forward Current - mA
TERMINAL CAPACITANCE vs.
REVERSE V OLTA GE
V
R
- Reverse Voltage - V
0.5 1 2 5 10 20 50 100
0.1
0.2
0.5
1
2
5
10
20
C
t
- Terminal Capacitance - pF
REVERSE CURRENT vs.
REVERSE V OLTA GE
V
R
- Reverse Voltage - V
01020304050
0.2
0.5
1
2
5
10
20
50
100
I
R
- Reverse Current - µA
REVERSE RECOVERY TIME vs.
FORWARD CURRENT
I
F
- Forward Current - mA
0 20 40 60 80 100
4
8
12
16
20
t
rr
- Reverse Recovery Time - ns
Data Sheet D16309EJ2V0DS 3
1SS304
REVERSE RECOVERY TIME (trr) TEST CIRCUIT
Pulse
Generator
(50 Ω)
Sampling
Oscilloscope
(50 Ω)
DC
Source
Trigger
0.02 µF D.U.T.
3 kΩ
+
−I
F
= 10 mA, V
R
= 6.0 V, R
L
= 100 Ω
i
rr
= 0.1
•
I
r
Input V oltage
Waveform to Diode Output Current
Waveform in Diode
V
F
I
F
V
R
I
r
0
0
t
rr
0.1
•
I
r
1SS304
M8E 00. 4
The information in this document is current as of July, 2002. The information is subject to change
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