7MBR75U4B120 - Fuji Electric

SPECIFICATION

Device Name :

Type Name :

Spec. No. :

H04-004-07b

7MBR75U4B120

MS6M 0855

MS6M0855

Power Integrated Module

Feb. 02 ’05

M.Watanabe

Y. S ek i

K.Yamada

S.Miyashita

Feb. 02 ’05

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H04-004-06b

R e v i s e d R e c o r d s

Date Classi-

fication Ind. Content Applied

date Drawn Checked Checked Approved

Enactment Issued

date

MS6M0855

Feb.-02 -’05 K.Yamada

M.Watanabe Y. S e k i

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MS6M0855

7MBR75U4B120

2. Equivalent circuit

1. Outline Drawing ( Unit : mm )

shows theoretical dimension.

( ) shows reference dimension.

23(N)

2(S) 3(T)1(R)

21(P) 22(P1)

7(B)

24(N1)

13(Gx)

19(Eu)

(Gu)

(Gv)

17(Ev)

4(U)

12(Gy) 11(Gz)

5(V)

15(Ew)

(Gw)

6(W)

10(En)

[ Converter ] [ Brake ] [ Inverter ] [ Thermistor ]

14(Gb)

LABEL

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3.Absolute Maximum Ratings ( at Tc= 25°C unless otherwise specified )

Tc=25°C

Tc=80°C

Tc=25°C

Tc=80°C

Tc=25°C

Tc=80°C

Tc=25°C

Tc=80°C

(*1) All terminals should be connected together when isolation test will be done.

(*2) Two thermistor terminals should be connected together, each other terminals should be connected together

and shorted to base plate when isolation test will be done.

(*3) Recommendable Value : 2.5~3.5 Nm (M5)

Viso

-40 ~ +125

Units

Maximum

Ratings

°C

1ms

2500

Screw

Torque -

Collector-Emitter voltage VCES

Tstg

Mounting (*3)

between terminal and copper base (*1)

between thermistor and others (*2)

Storage temperature

Isolation

voltage

Junction temperature

-Ic 75

150

275

-Ic pulse

1 device

150

VAC

N m3.5

±20 V

1200 V

Items Symbols Conditions

VCES

Inverter

Collector-Emitter voltage

Gate-Emitter voltage

Collector current

Collector Power Dissipation

VGES

AC : 1min.

1200

Icp

150

100

Continuous

Tj=150°C, 10ms

half sine wave

Collector current

Gate-Emitter voltage VGES ±20

1200

Icp 1ms 70

Repetitive peak reverse Voltage (Diode) V

Brake

Collector Power Dissipation Pc 1 device 160

VRRM

50Hz/60Hz

Average Output Current

Repetitive peak reverse Voltage VRRM 1600

sine wave

75 AIo

Converter

t (Non-Repetitive)

520

1352

Surge Current (Non-Repetitive) IFSM

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4. Electrical characteristics ( at Tj= 25°C unless otherwise specified)

VGE=0V

UnitsItems Symbols Conditions Characteristics

min. typ. max.

Gate-Emitter

leakage current

Turn-off time

Turn-on time

Inverter

0.40

VGE(th)

Rg = 22 Ω

toff

tr (i)

VCE=10V,VGE=0V,f=1MHz

Vcc = 600V

Ic = 75A

VGE=±15V

0.42-

0.03-

IGES

Zero gate voltage

Collector current ICES

ton

CiesInput capacitance

Collector-Emitter

saturation voltage

VCE(sat)

(terminal)

VCE(sat)

(chip)

Gate-Emitter

threshold voltage

Reverse recovery time

Zero gate voltage

Collector current

Brake

Turn-off time

μsIF = 75A

- 5000 -

- 0.35

VGE = 0V

2.10

2.45-

520

- 200

1.0-

T =100°C 465

2.10

1.90

(chip)

Tj= 25°C -

Tj=125°C

IF = 75A

trr

2.25 2.45

2.55

- 2.95

1.00

μs

nF-

0.30

1.20

0.60

0.07

VCE = 0V -

4.5

2.60

- 2.20

VGE=±20V

VCE = 1200V

6.5

VGE = 0V

Ic = 75mA

VCE = 20V

0.15

1.0 mA

200

8.5 V

2.80

2.45

Thermistor

Resistance R T = 25°C

495

B value K3305 3375 3450T = 25/50°C

IGES VCE = 0V

VCE = 1200V

ICES

Forward on voltage

(terminal)

Tj=125°C

Tj= 25°C

Tj=125°C

Tj= 25°C

Tj=125°C

Ic = 75A

VGE=15V Tj= 25°C

VGE=±20V

Tj= 25°C

- 1.95 2.40

- 2.30

Tj=125°C

- 2.15 2.60

- 2.50 -

VCE(sat)

(chip) Ic = 35A Tj= 25°C

Tj=125°C -

Turn-on time ton Vcc = 600V - 0.53 1.20

Collector-Emitter

saturation voltage

VCE(sat)

(terminal) VGE=15V

μs

tr Ic = 35A - 0.43 0.60

VGE=±15V 1.00

tf - 0.07 0.30

toff

Rg = 43 Ω

1.0 mAIRRM

- 1.40

VFM -

VR=1200V - -

Gate-Emitter

leakage current

chip - 1.30

Forward on voltage VGE=0V

IF = 75A

terminal

Reverse current

0.37

- 1.0 mA

Converter

Reverse current IRRM VR=1600V -

1.75 V

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Vcc

10%

90%

10% 10%

90%

～

o n

r( i )

o f f

r r

5. Thermal resistance characteristics

Brake IGBT

Converter Diode

(1device) (*4)

(*4) This is the value which is defined mounting on the additional cooling fin with thermal compound.

6. Indication on module

7.Applicable category

This specification is applied to Power Integrated Module named 7MBR75U4B120 .

8.Storage and transportation notes

・ The module should be stored at a standard temperature of 5 to 35°C and humidity of 45 to 75% .

・

Store modules in a place with few temperature changes in order to avoid condensation on the module surface.

・ Avoid exposure to corrosive gases and dust.

・ Avoid excessive external force on the module.

・ Store modules with unprocessed terminals.

・ Do not drop or otherwise shock the modules when transporting.

9. Definitions of switching time

10. Packing and Labeling

Display on the packing box

- Logo of production

- Type name

- Lot No

- Products quantity in a packing box

Logo of production

75A 1200V

7MBR75U4B120

- 0.45

- - 0.73

Contact Thermal resistance

Thermal resistance(1device) -

Rth(j-c)

Inverter IGBT

Inverter FWD

Units

min. typ. max.

Items Symbols Conditions Characteristics

Lot.No. Place of manufacturing (code)

°C/W

Rth(c-f) with Thermal Compound - 0.05 -

0.76

0.50

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11. Reli abili ty test results

Reliability Test Items

Test

cate-

gories

Test items Test methods and conditions

Reference

norms

EIAJ ED-4701

(Aug.-2001 edition)

Number

sample

Accept-

ance

number

1 Terminal Strength Pull force : 20N

Test Method 401

5 ( 0 : 1 )

(Pull test) Test time : 10±1 sec.

MethodⅠ

2 Mounting Strength Screw torque : 2.5 ~ 3.5 N･m (M5)

Test Method 402

5 ( 0 : 1 )

Test time : 10±1 sec.

methodⅡ

3 Vibration Range of frequency : 10 ~ 500Hz

Test Method 403

5 ( 0 : 1 )

Sweeping time : 15 min.

Reference 1

Acceleration :

100m/s

Condition code B

Sweeping direction : Each X,Y,Z axis

Test time : 6 hr. (2hr./direction)

4 Shock Maximum acceleration :

5000m/s

Test Method 404

5 ( 0 : 1 )

Pulse width : 1.0msec.

Condition code B

Direction : Each X,Y,Z axis

Test time : 3 times/direction

5 Solderabitlity Solder temp. :

235±5

℃

Test Method 303

( 0 : 1 )

Immersion time : 5±0.5sec.

Condition code A

Test time : 1 time

Each terminal should be Immersed in solder

within 1~1.5mm from the body.

6 Resistance to Solder temp. :

260±5

℃

Test Method 302

( 0 : 1 )

Soldering Heat Immersion time : 10±1sec.

Condition code A

Test time : 1 time

Each terminal should be Immersed in solder

within 1~1.5mm from the body.

1 High Temperature Storage temp. : 125±5 ℃

Test Method 201

5 ( 0 : 1 )

Storage Test duration : 1000hr.

2 Low Temperature Storage temp. : -40±5 ℃

Test Method 202

5 ( 0 : 1 )

Storage Test duration : 1000hr.

3 Temperature Storage temp. : 85±2 ℃

Test Method 103

5 ( 0 : 1 )

Humidity Relative humidity : 85±5%

Test code C

Storage Test duration : 1000hr.

4 Unsaturated Test temp. : 120±2 ℃

Test Method 103

5 ( 0 : 1 )

Pressurized Vapor Test humidity : 85±5%

Test code E

Test duration : 96hr.

5 Temperature

Test Method 105

5 ( 0 : 1 )

Cycle Test temp. :

Low temp. -40

℃

High temp. 125

℃

RT 5 ~ 35

℃

Dwell time : High ~ RT ~ Low ~ RT

1hr. 0.5hr. 1hr. 0.5hr.

Number of cycles : 100 cycles

Thermal Shock

Test Method 307

( 0 : 1 )

Test temp. : High temp. 100

-5

℃

method Ⅰ

Condition code A

Low temp. 0

-0

℃

Used liquid : Water with ice and boiling water

Dipping time : 5 min. par each temp.

Transfer time : 10 sec.

Number of cycles : 10 cycles

Mechanical TestsEnvironment Tests

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MS6M0855

Reliability Test Items

Test

cate-

gories

Test items Test methods and conditions

Reference

norms

EIAJ ED-4701

(Aug.-2001 edition)

Number

sample

Accept-

ance

number

1 High temperature

Test Method 101

5 ( 0 : 1 )

Reverse Bias Test temp. :

Ta = 125

℃

(Tj

≦

150

℃

)

Bias Voltage : VC = 0.8×VCES

Bias Method : Applied DC voltage to C-E

VGE = 0V

Test duration : 1000hr.

2 High temperature

Test Method 101

5 ( 0 : 1 )

Bias (for gate) Test temp. :

Ta = 125

℃

(Tj

≦

150

℃

)

Bias Voltage : VC = VGE = +20V or -20V

Bias Method : Applied DC voltage to G-E

VCE = 0V

Test duration : 1000hr.

3 Temperature

Test Method 102

5 ( 0 : 1 )

Humidity Bias Test temp. :

Condition code C

Relative humidity :

Bias Voltage : VC = 0.8×VCES

Bias Method : Applied DC voltage to C-E

VGE = 0V

Test duration : 1000hr.

4 Intermitted ON time : 2 sec.

Test Method 106

5 ( 0 : 1 )

Operating Life OFF time : 18 sec.

(Power cycle) Test temp. :



Tj=100±5 deg

( for IGBT )

≦

150

℃

, Ta=25±5

℃

Number of cycles : 15000 cycles

Endurance TestsEndurance Tests

Failure Criteria

Item Characteristic Symbol Failure criteria Unit Note

Lower limit Upper limit

Electrical Leakage current ICES - USL×2 mA

characteristic ±IGES - USL×2 A

Gate threshold voltage VGE(th) LSL×0.8 USL×1.2 mA

Saturation voltage VCE(sat) - USL×1.2 V

Forward voltage VF - USL×1.2 V

Thermal IGBT  VGE - USL×1.2 mV

resistance or  VCE

FWD  VF - USL×1.2 mV

Isolation voltage Viso Broken insulation -

Visual Visual inspection

inspection Peeling - The visual sample -

Plating

and the others

LSL : Lower specified limit.

USL : Upper specified limit.

Note :

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aaattt rrroooooommm aaammmbbbiiieeennnttt fffooorrr 222 hhhooouuurrrsss mmmiiinnniiimmmuuummm,,, 222444 hhhooouuurrrsss mmmaaaxxxiiimmmuuummm aaafffttteeerrr rrreeemmmooovvvaaalll fffrrrooommm ttthhheee ttteeessstttsss...

AAAnnnddd iiinnn cccaaassseee ooofff ttthhheee wwweeettttttiiinnnggg ttteeessstttsss,,, fffooorrr eeexxxaaammmpppllleee,,, mmmoooiiissstttuuurrreee rrreeesssiiissstttaaannnccceee ttteeessstttsss,,, eeeaaaccchhh cccooommmpppooonnneeennnttt

ssshhhaaallllll bbbeee mmmaaadddeee wwwiiipppeee ooorrr dddrrryyy cccooommmpppllleeettteeelllyyy bbbeeefffooorrreee ttthhheee mmmeeeaaasssuuurrreeemmmeeennnttt...

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Reliability Test Results

Test

cate-

gorie

Test items

Reference

norms

EIAJ ED-4701

(Aug.-2001 edition)

Number

of test

sample

Number

failure

sample

1 Terminal Strength

Test Method 401

5 0

(Pull test)

MethodⅠ

2 Mounting Strength

Test Method 402

5 0

methodⅡ

3 Vibration

Test Method 403

5 0

Condition code B

4 Shock

Test Method 404

5 0

Condition code B

5 Solderabitlity

Test Method 303

5 0

Condition code A

6 Resistance to Soldering Heat

Test Method 302

5 0

Condition code A

1 High Temperature Storage

Test Method 201

5 0

2 Low Temperature Storage

Test Method 202

5 0

3 Temperature Humidity

Test Method 103

5 *

Storage

Test code C

4 Unsaturated

Test Method 103

5 0

Pressurized Vapor

Test code E

5 Temperature Cycle

Test Method 105

5 0

6 Thermal Shock

Test Method 307

5 0

method Ⅰ

Condition code A

1 High temperature Reverse Bias

Test Method 101

5 *

2 High temperature Bias

Test Method 101

5 0

( for gate )

3 Temperature Humidity Bias

Test Method 102

5 *

Condition code C

4 Intermitted Operating Life

Test Method 106

5 0

(Power cycling)

( for IGBT )

* under confirmation

Mechanical Tests

Environment Tests

Endurance Tests

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[ Inverter ] [ Inverter ]

Tj= 125°C / chip

Collector current vs. Collector-Emitter voltage (typ.) Collector current vs. Collector-Emitter voltage (typ.)

Dynamic Gate charge (typ.)

Tj= 25°C / chip

VGE=15V / chip Tj=25°C / chip

[ Inverter ] [ Inverter ]

Collector current vs. Collector-Emitter voltage (typ.)

Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)

Vcc=600V， Ic=75A，Tj= 25°CVGE=0V, f= 1MHz, Tj= 25°C

Capacitance vs. Collector-Emitter voltage (typ.)

100

120

0 1 2 3 4 5

Collector-Emitter voltage : VCE [V]

Collector current : Ic [A]

VGE=20V 15V

12V

10V

100

120

0 1 2 3 4 5

Collector-Emitter voltage : VCE [V]

Collector current : Ic [A]

VGE=20V 15V 12V

10V

100

120

0 1 2 3 4 5

Collector-Emitter voltage : VCE [V]

Collector current : Ic [A]

Tj=125°C

Tj=25°C

5 10 15 20 25

Gate-Emitter voltage : VGE [V]

Collector - Emitter voltage : VCE [ V ]

Ic=100A

Ic=50A

Ic= 25A

0.1

1.0

10.0

0 10 20 30

Collector-Emitter voltage : VCE [V]

Capacitance : Cies, Coes, Cres [ nF ]

Cies

Coes

Cres

0 50 100 150 200 250 300

Gate charge : Qg [nC]

Collector-Emitter voltage : VCE [ 200V/div ]

Gate - Emitter voltage : VGE [ 5V/div ]

VGE

VCE

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[ Inverter ] [ Inverter ]

Switching time vs. Collector current (typ.)

Vcc=600V, VGE=±15V, Rg=22Ω, Tj= 25°C

Switching time vs. Collector current (typ.)

Vcc=600V, VGE=±15V, Rg=22Ω, Tj=125°C

Reverse bias safe operating area (max.)

Vcc=600V, Ic=75A, VGE=±15V, Tj= 125°C +VGE=15V,-VGE <= 15V, RG >= 22Ω ,Tj <= 125°C

Switching loss vs. Collector current (typ.)

Vcc=600V, VGE=±15V, Rg=22Ω

Switching loss vs. Gate resistance (typ.)

[ Inverter ] [ Inverter ]

Vcc=600V, Ic=75A, VGE=±15V, Tj= 25°C

Switching time vs. Gate resistance (typ.)

100

1000

10000

0 25 50 75 100

Collector current : Ic [A]

Switching time : ton, tr, toff, tf [ nsec ]

ton

100

1000

10000

0 25 50 75 100

Collector current : Ic [A]

Switching time : ton, tr, toff, tf [ nsec ]

100

1000

10000

10.0 100.0 1000.0

Gate resistance : Rg [Ω]

Switching time : ton, tr, toff, tf [ nsec ]

toff

ton

0 20 40 60 80 100

Collector current : Ic [A]

Eon(125°C)

Eon(25°C)

Eoff(125°C)

Err(125°C)

Err(25°C)

Eoff(25°C)

10.0 100.0 1000.0

Gate resistance : Rg [Ω]

Eoff

Err

Eon

Switching loss : Eon, Eoff, Err [mJ/pulse ]

100

150

200

0 400 800 1200

Collector-Emitter voltage : VCE [V]

Collector current : Ic [A]

toff

ton

Switching loss : Eon, Eoff, Err [mJ/pulse ]

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[ Inverter ] [ Inverter ]

[ Thermistor ]

Reverse recovery characteristics (typ.)

Vcc=600V, VGE=±15V, Rg=22Ω

Forward current vs. Forward on voltage (typ.)

chip

[ Converter ]

Forward current vs. Forward on voltage (typ.)

Transient thermal resistance (max.) Temperature characteristic (typ.)

0.1

100

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

Resistance : R [kΩ]

Temperature [°C ]

100

120

0 1 2 3 4

Forward on voltage : VF [V]

Forward current : IF [A]

Tj=125°C

Tj=25°C

100

1000

0 25 50 75 100

Forward current : IF [A]

Reverse recovery current : Irr [ A ]

Reverse recovery time : trr [ nsec ]

trr (125°C)

0.010

0.100

1.000

10.000

0.001 0.010 0.100 1.000

Pulse width : Pw [sec]

Thermal resistanse : Rth(j-c) [ °C/W ]

FWD[Inverter]

IGBT[Brake]

IGBT[Inverter]

100

120

0.0 0.5 1.0 1.5 2.0 2.5

Forward on voltage : VFM [V]

Forward current : IF [A]

Tj=125°C

Tj=25°C

Conv. Diode

Irr (125°C)

Irr (25°C)

trr (25°C)

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Capacitance vs. Collector-Emitter voltage (typ.)

Vcc=600V， Ic=35A，Tj= 25°CVGE=0V, f= 1MHz, Tj= 25°C

Dynamic Gate charge (typ.)

Tj= 25°C / chip

VGE=15V / chip Tj=25°C / chip

[ Brake ] [ Brake ]

Collector current vs. Collector-Emitter voltage (typ.)

Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)

[ Brake ] [ Brake ]

Tj= 125°C / chip

Collector current vs. Collector-Emitter voltage (typ.) Collector current vs. Collector-Emitter voltage (typ.)

0 1 2 3 4 5

Collector-Emitter voltage : VCE [V]

Collector current : Ic [A]

VGE=20V

15V

12V

10V

0 1 2 3 4 5

Collector-Emitter voltage : VCE [V]

Collector current : Ic [A]

VGE=20V 15V 12V

10V

0 1 2 3 4 5

Collector-Emitter voltage : VCE [V]

Collector current : Ic [A]

Tj=125°C

Tj=25°C

5 10 15 20 25

Gate-Emitter voltage : VGE [V]

Collector - Emitter voltage : VCE [ V ]

Ic=50A

Ic=25A

Ic=12.5A

0.1

1.0

10.0

0 10 20 30

Collector-Emitter voltage : VCE [V]

Cies

Coes

Cres

0 25 50 75 100 125 150

Gate charge : Qg [nC]

Collector-Emitter voltage : VCE [ 200V/div ]

Gate - Emitter voltage : VGE [ 5V/div ]

VGE

VCE

Capacitance : Cies,Coes,Cres [nF]

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Warnings

-This product shall be used within its absolute maximum rating (voltage, current, and temperature).　This product

may be broken in case of using beyond the ratings. If Printed Circuit Board is not suitable, the main pin terminals

may have higher temperature than Tstg. Also the pin terminals shall be used within Tstg.

製品の絶対最大定格（電圧，電流，温度等）の範囲内で御使用下さい。絶対最大定格を超えて使用すると、素子が破壊する

場合があります。また、使用するプリント板が不適切な場合、主端子ピンの温度がTstg以上になることがあります。主端子ピン

もTstg範囲内でご使用下さい。

-Connect adequate fuse or protector of circuit between three-phase line and this product to prevent the equipment

from causing secondary destruction, such as fire, its spreading, or explosion.

万一の不慮の事故で素子が破壊した場合を考慮し、商用電源と本製品の間に適切な容量のヒューズ又はブレーカーを必ず

付けて火災，爆発，延焼等の２次破壊を防いでください。

-Use this product after realizing enough working on environment and considering of product's reliability life.

This product may be broken before target life of the system in case of using beyond the product's reliability life.

製品の使用環境を十分に把握し、製品の信頼性寿命が満足できるか検討の上、本製品を適用して下さい。製品の信頼性寿命

を超えて使用した場合、装置の目標寿命より前に素子が破壊する場合があります。

-When electric power is connected to equipments, rush current will be flown through rectifying diode to charge

DC capacitor. Guaranteed value of the rush current is specified as I

t (non-repetitive), however frequent rush

current through the diode might make it's power cycle destruction occur because of the repetitive power.

In application which has such frequent rush current, well consideration to product life time (i.e. suppressing

the rush current) is necessary.

電源投入時に整流用ダイオードには、コンデンサーを充電する為の突入電流が流れます。この突入電流に対する保証値は

非繰返

し)

として

表記

されていますが

、

この

突入電流

が

頻繁

に

流

れると

破壊

とは

別

に

整流用

ダイオード

の

繰返

し

負荷

に

よるパワーサイクル耐量破壊を起こす可能性があります。突入電流が頻繁に流れるようなアプリケーションでは、突入電流値

を抑えるなど、製品寿命に十分留意してご使用下さい。

-If the product had been used in the environment with acid, organic matter, and corrosive gas ( hydrogen sulfide,

sulfurous acid gas), the product's performance and appearance can not be ensured easily.

酸・有機物・腐食性ガス（硫化水素，亜硫酸ガス等）を含む環境下で使用された場合、製品機能・外観等の保証はできません。

-Use this product within the power cycle curve (Technical Rep.No. : MT5F12959). Power cycle capability is

classified to delta-Tj mode which is stated as above and delta-Tc mode. Delta-Tc mode is due to rise and down

of case temperature (Tc), and depends on cooling design of equipment which use this product. In application

which has such frequent rise and down of Tc, well consideration of product life time is necessary.

本製品は、パワーサイクル寿命カーブ以下で使用下さい(技術資料No.: MT5F12959)。パワーサイクル耐量にはこのΔTjによる

場合の他に、ΔTcによる場合があります。これはケース温度(Tc)の上昇下降による熱ストレスであり、本製品をご使用する際

の放熱設計に依存します。ケース温度の上昇下降が頻繁に起こる場合は、製品寿命に十分留意してご使用下さい。

-Never add mechanical stress to deform the main or control terminal. The deformed terminal may cause poor

contact problem.

主端子及び制御端子に応力を与えて変形させないで下さい。　端子の変形により、接触不良などを引き起こす場合があります。

-Use this product with keeping the cooling fin's flatness between screw holes within 100um at 100mm and the

roughness within 10um. Also keep the tightening torque within the limits of this specification. Too large convex

of cooling fin may cause isolation breakdown and this may lead to a critical accident. On the other hand, too

large concave of cooling fin makes gap between this product and the fin bigger, then, thermal conductivity will

be worse and over heat destruction may occur.

冷却フィンはネジ取り付け位置間で平坦度を

100mm

で

100um

以下、表面の粗さは

10um

以下にして下さい。　過大な凸反り

があったりすると本製品が絶縁破壊を起こし、重大事故に発展する場合があります。また、過大な凹反りやゆがみ等があると、

本製品と冷却フィンの間に空隙が生じて放熱が悪くなり、熱破壊に繋がることがあります。

-In case of mounting this product on cooling fin, use thermal compound to secure thermal conductivity. If the

thermal compound amount was not enough or its applying method was not suitable, its spreading will not be

enough, then, thermal conductivity will be worse and thermal run away destruction may occur.

Confirm spreading state of the thermal compound when its applying to this product.

(Spreading state of the thermal compound can be confirmed by removing this product after mounting.)

素子を冷却フィンに取り付ける際には、熱伝導を確保するためのコンパウンド等をご使用ください。又、塗布量が不足したり、

塗布方法が不適だったりすると、コンパウンドが十分に素子全体に広がらず、放熱悪化による熱破壊に繋がる事があります。

コンパウンドを塗布する際には、製品全面にコンパウンドが広がっている事を確認してください。

(実装した後に素子を取りはずすとコンパウンドの広がり具合を確認する事が出来ます。)

-It shall be confirmed that IGBT's operating locus of the turn-off voltage and current are within the RBSOA

specification. This product may be broken if the locus is out of the RBSOA.

ターンオフ電圧・電流の動作軌跡がRBSOA仕様内にあることを確認して下さい。RBSOAの範囲を超えて使用すると素子が破壊

する可能性があります。

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H04-004-03a

MS6M0855

Cautions

-Fuji Electric Device Technology is constantly making every endeavor to improve the product quality and reliability.

However, semiconductor products may rarely happen to fail or malfunction. To prevent accidents causing injury or

death, damage to property like by fire, and other social damage resulted from a failure or malfunction of

the Fuji Electric Device Technology semiconductor products, take some measures to keep safety such as redundant

design, spread-fire-preventive design, and malfunction-protective design.

富士電機デバイステクノロジーは絶えず製品の品質と信頼性の向上に努めています。しかし、半導体製品は故障が発生したり、

誤動作する場合があります。富士電機デバイステクノロジー製半導体製品の故障または誤動作が、結果として人身事故・火災

等による財産に対する損害や社会的な損害を起こさないように冗長設計・延焼防止設計・誤動作防止設計など安全確保

のための手段を講じて下さい。

-The application examples described in this specification only explain typical ones that used the Fuji Electric Device

Technology

products. This specification never ensure to enforce the industrial property and other rights, nor license the

enforcement rights.

本仕様書に記載してある応用例は、富士電機デバイステクノロジー製品を使用した代表的な応用例を説明するものであり、

本仕様書によって工業所有権、その他権利の実施に対する保障または実施権の許諾を行うものではありません。

-The product described in this specification is not designed nor made for being applied to the equipment or

systems used under life-threatening situations. When you consider applying the product of this specification

to particular used, such as vehicle-mounted units, shipboard equipment, aerospace equipment, medical devices,

atomic control systems and submarine relaying equipment or systems,　please apply after confirmation

of this product to be satisfied about system construction and required reliability.

本仕様書に記載された製品は、人命にかかわるような状況下で使用される機器あるいはシステムに用いられることを

目的として設計・製造されたものではありません。本仕様書の製品を車両機器、船舶、航空宇宙、医療機器、原子力

制御、海底中継機器あるいはシステムなど、特殊用途へのご利用をご検討の際は、システム構成及び要求品質に

満足することをご確認の上、ご利用下さい。

If there is any unclear matter in this specification, please contact Fuji Electric Device Technology Co.,Ltd.

Warnings

-If excessive static electricity is applied to the control terminals, the devices may be broken. Implement some

countermeasures against static electricity.

制御端子に過大な静電気が印加された場合、素子が破壊する場合があります。取り扱い時は静電気対策を実施して下さい。

-Never add the excessive mechanical stress to the main or control terminals when the product is applied to

equipments. The module structure may be broken.

素子を装置に実装する際に、主端子や制御端子に過大な応力を与えないで下さい。端子構造が破壊する可能性があります。

-In case of insufficient -VGE, erroneous turn-on of IGBT may occur. -VGE shall be set enough value to prevent

this malfunction. (Recommended value : -VGE = -15V)

逆バイアスゲート電圧-VGEが不足しますと誤点弧を起こす可能性があります。誤点弧を起こさない為に-VGEは十分な値で

設定して下さい。　（推奨値 : -VGE = -15V)

-In case of higher turn-on dv/dt of IGBT, erroneous turn-on of opposite arm IGBT may occur. Use this product in

the most suitable drive conditions, such as +VGE, -VGE, RG to prevent the malfunction.

ターンオン dv/dt が高いと対抗アームのＩＧＢＴが誤点弧を起こす可能性があります。誤点弧を起こさない為の最適なドライブ

条件（+VGE, -VGE, RG等）でご使用下さい。

-This product may be broken by avalanche in case of VCE beyond maximum rating VCES is applied between

C-E terminals. Use this product within its absolute maximum voltage.

VCESを超えた電圧が印加された場合、アバランシェを起こして素子破壊する場合があります。VCEは必ず絶対定格の範囲内

でご

使用下

さい

。

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