2N3700HR Hi-Rel 80 V, 1 A NPN transistor Datasheet - production data Features V(BR)CEO 80 V IC(max) 1A HFE at 10 V - 150 mA >100 1 2 3 3 3 TO-18 4 1 1 2 2 LCC-3 UB Pin 4 in UB is connected to the metallic lid Figure 1. Internal schematic diagram * Hermetic packages * ESCC and Jans qualified * Up to 100 krad(Si) low dose rate Description The 2N3700HR is a NPN transistor specifically designed for aerospace and Hi-Rel applications. It is available in the JAN qualification system (MILPRF19500) and in the ESCC qualification system (ESCC 5000). In case of discrepancies between this datasheet and the relevant agency specification, the latter takes precedence. Table 1. Device summary Device Qualification system Agency specification Package Radiation level EPPL JANSR2N3700UBx JANSR MIL-PRF-19500/391 UB 100 krad high and low dose rate - JANS2N3700UBx JANS MIL-PRF-19500/391 UB - - 2N3700RUBx ESCC Flight 5201/004 UB 100 krad - low dose rate Target 2N3700UBx ESCC Flight 5201/004 UB - Target SOC3700RHRx ESCC Flight 5201/004 LCC-3 100 krad - low dose rate Yes SOC3700HRx ESCC Flight 5201/004 LCC-3 - Yes 2N3700RHRx ESCC Flight 5201/004 TO-18 100 krad - low dose rate - 2N3700HRx ESCC Flight 5201/004 TO-18 - - August 2015 This is information on a product in full production. DocID15354 Rev 12 1/23 www.st.com Contents 2N3700HR Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 JANS electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.2 ESCC electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.3 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 2.4 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 3 Radiation hardness assurance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 4.1 UB package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 4.2 LCC-3 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 4.3 TO-218 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 5 Order codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 6 Shipping details . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 7 2/23 6.1 Date code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 6.2 Documentation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 DocID15354 Rev 12 2N3700HR 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VCBO Collector-base voltage (IE = 0) 140 V VCEO Collector-emitter voltage (IB = 0) 80 V VEBO Emitter-base voltage (IC = 0) 7 V Collector current 1 A 0.5 W 0.5 W 0.76 W 1.8 W -65 to 200 C 200 C IC for 2N3700HR Ptot Total dissipation at Tamb = 25 C for SOC3700HRB for SOC3700HRB Total dissipation at Tc = 25 C Tstg Storage temperature TJ Max. operating junction temperature (1) for 2N3700HR 1. When mounted on a 15 x 15 x 0.6 mm ceramic substrate. Table 3. Thermal data Symbol RthJC RthJSP(IS) RthJA Parameter LCC-3 and UB TO-18 Thermal resistance junction-case (max) for JAN - - Thermal resistance junction-case (max) for ESCC 350 97 Thermal resistance junction-solder pad (infinite sink) (max) for JAN 90 - Thermal resistance junction-solder pad (infinite sink) (max) for ESCC - - Thermal resistance junction-ambient (max) for JAN 325 - Thermal resistance junction-ambient (max) for ESCC 240(1) 350 Unit C/W 1. When mounted on a 15 x 15 x 0.6 mm ceramic substrate. DocID15354 Rev 12 3/23 23 Electrical characteristics 2 2N3700HR Electrical characteristics JANS and ESCC version of the products are assembled and tested in compliance with the agency specification it is qualified in. The electrical characteristics of each version are provided in dedicated tables. Tcase = 25 C unless otherwise specified. 2.1 JANS electrical characteristics Table 4. JANS electrical characteristics Symbol Test conditions Min. Typ. Max. Unit ICBO Collector cut-off current (IE = 0) VCB = 140 V - 10 A ICES Collector cut-off current (IE = 0) VCE = 90 V VCE = 90 V, Tamb= 150C - 10 5 nA A IEBO Emitter cut-off current (IC = 0) VEB = 5 V VEB = 7 V - 10 10 nA A V(BR)CEO Collector-emitter breakdown voltage (IB = 0) IC = 30 mA - 80 V VCE(sat) Collector-emitter saturation voltage IC = 150 mA IC = 500 mA IB = 15 mA IB = 50 mA - 0.2 0.5 V V VBE(sat) Base-emitter saturation voltage IC = 150 mA IB = 15 mA - 1.1 V IC = 0.1 mA VCE = 10 V 50 - 200 IC = 10 mA VCE = 10 V 90 - IC = 150 mA VCE = 10 V 100 - IC = 150 mA Tamb= -55 C VCE = 10 V 40 - IC = 500 mA VCE = 10 V 50 - IC = 1 A VCE = 10 V 15 - 80 - 400 5 - 20 hFE hfe 4/23 Parameter DC current gain Small signal current gain VCE = 5 V f = 1 kHz IC = 1 mA VCE = 10 V f = 20 MHz IC = 50 mA 300 200 Cobo Output capacitance (IE = 0) VEB = 0.5 V 100 kHz; f = 1 MHz - 12 pF Cibo Output capacitance (IE = 0) VEB = 0.5 V 100 kHz; f = 1 MHz - 60 pF DocID15354 Rev 12 2N3700HR Electrical characteristics Table 4. JANS electrical characteristics (continued) Symbol Parameter Test conditions Min. Typ. Max. Unit Noise figure VCE = 10 V IC = 100 A Rg = 1 kW, power bandwidth - 4 dB r'b,Cc(1) Collector-base time constant VCB =10 V; IC=10 mA; f=79.8 MHz - 400 ps toff + toff Switching times see circuit Figure 6 - 30 ns NF 1. This parameter may be determined by applying an rf signal voltage of 1.0 volt (rms) across the collectorbase terminals, and measuring the ac voltage drop (Veb ) with a high- impedance rf voltmeter across the emitter-base terminals. With f = 79.8 MHz used for the 1.0 volt signal, the following computation applies: r'b , Cc(ps) = 2 X Veb (mV). 2.2 ESCC electrical characteristics Table 5. ESCC 5201/004 electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit VCB = 90 V - 10 nA VCB = 90 V, Tamb = 150 C - 10 A - 10 nA ICBO Collector cut-off current (IE = 0) IEBO Emitter cut-off current (IC = 0) VEB = 5 V Collector-base breakdown voltage (IE = 0) IC = 100 A 140 - V Collector-emitter V(BR)CEO(1) breakdown voltage (IB = 0) IC = 30 mA 80 - V V(BR)EBO Emitter-base breakdown voltage (IC = 0) IE = 100 A 7 - V VCE(sat) (1) Collector-emitter saturation voltage IC = 150 mA IC = 500 mA IB = 15 mA IB = 50 mA - VBE(sat) (1) Base-emitter saturation voltage IC = 150 mA IB = 15 mA IC = 150 mA IB = 15 mA; Tamb = 110 C - V(BR)CBO hFE hfe DC current gain Small signal current gain IC = 10 mA, VCE = 10 V 90 - IC = 150 mA, VCE = 10 V 100 - IC = 500 mA, VCE = 10 V 50 - IC = 150 mA, VCE = 10 V; Tamb = -55 C 40 - IC = 50 mA, VCE = 10 V; f = 20 MHz 5 - DocID15354 Rev 12 0.2 0.5 1 0.9 V V 300 5/23 23 Electrical characteristics 2N3700HR Table 5. ESCC 5201/004 electrical characteristics (continued) Symbol Parameter Test conditions Min. Typ. Max. Unit CCBO Output capacitance (IE= 0) VCB = 10 V, f = 1 MHz - 12 pF CIBO Input capacitance (IC= 0) VEB = 0.5 V, f = 1 MHz - 60 pF 1. Pulsed duration = 300 s, duty cycle > 2 % 2.3 Electrical characteristics (curves) Figure 2. DC current gain (VCE=1 V) Figure 3. DC current gain (VCE=10 V) K)( K)( 9&( 9 9&( 9 & & & & & & ,F $ ,F $ $0Y Figure 5. Base emitter saturation voltage 9&( VDW 9%( VDW K)( 9 & & & ,F $ K)( 9 $0Y 6/23 $0Y Figure 4. Collector emitter saturation voltage DocID15354 Rev 12 & & & ,F $ $0Y 2N3700HR 2.4 Electrical characteristics Test circuits Figure 6. JANS non saturated switching-time test circuit +18 V NOTES: 1. The rise time (tr) of the applied pulse shall be 2.0 ns, duty cycle 2 percent and the generator source impedance shall be 50 ohms. 2. Sampling oscilloscope: ZIN 100 k, CIN 12 pF, rise time 2.0 ns. Gipd040620131551FSR DocID15354 Rev 12 7/23 23 Electrical characteristics 2N3700HR Figure 7. ESCC resistive load switching test circuit 1. Fast electronic switch 2. Non-inductive resistor 8/23 DocID15354 Rev 12 2N3700HR 3 Radiation hardness assurance Radiation hardness assurance The products guaranteed in radiation within the JANS system fully comply with the MILPRF-19500/255 specification. The products guaranteed in radiation within the ESCC system fully comply with the ESCC 5201/004 and ESCC 22900 specifications. JANS radiation assurance ST JANS parts guaranteed at 100 krad (Si), tested, in full compliancy with the MIL-PRF19500 specification, specifically the Group D, subgroup 2 inspection, between 50 and 300 rad/s. On top of the standard JANSR high dose rate by wafer lot guarantee, ST 2N3700HR series include an additional wafer by wafer 100 krad Low dose rate guarantee at 0.1 rad/s, identical to the ESCC 100 krad guarantee. It is supported with the same Radiation Verification Test report provided with each shipment. A brief summary of the standard High Dose Rate by wafer lot JANSR guarantee is provided below: * All test are performed in accordance to MIL-PRF-19500 and test method 1019 of MILSTD-750 for total Ionizing dose. * The table below provides for each monitored parameters of the test conditions and the acceptance criteria. Table 6. MIL-PRF-19500 (test method 1019) post radiation electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit ICBO Collector cut-off current (IE = 0) VCB = 140 V - 20 A ICES Collector-emitter cutoff current VCE = 90 V - 20 nA IEBO Emitter cut-off current (IC = 0) VEB = 5 V VEB = 7 V - 20 20 nA A V(BR)CEO Collector-emitter breakdown voltage (IB = 0) IC = 30 mA - 80 V VCE(sat) Collector-emitter saturation voltage IC = 150 mA IC = 500 mA IB = 15 mA IB = 50 mA - 0.23 0.58 V V VBE(sat) Base-emitter saturation voltage IC = 150 mA IB = 15 mA - 1.1 V IC = 150 mA VCE = 10 V [50](1) - 300 IC = 0.1 mA VCE = 10 V [25](1) - 200 IC = 10 mA VCE = 10 V [45](1) - VCE = 10 V [25](1) - VCE = 10 V [7.5](1) - [hFE] Post irradiation gain calculation IC = 500 mA IC = 1.0 A 200 1. See method 1019 of MIL-STD-750 for how to determine [hFE] by first calculating the delta (1/hFE) from the pre- and post-radiation hFE. Notice the [hFE] is not the same as hFE and cannot be measured directly. The [hFE] value can never exceed the pre-radiation minimum hFE that it is based upon. DocID15354 Rev 12 9/23 23 Radiation hardness assurance 2N3700HR ESCC radiation assurance Each product lot is tested according to the ESCC basic specification 22900, with a minimum of 11 samples per diffusion lot and 5 samples per wafer, one sample being kept as unirradiated sample, all of them being fully compliant with the applicable ESCC generic and/or detailed specification. ST goes beyond the ESCC specification by performing the following procedure: * Test of 11 pieces by wafer, 5 biased at least 80% of V(BR)CEO, 5 unbiased and 1 kept for reference * Irradiation at 0.1 rad (Si)/s * Acceptance criteria of each individual wafer if as 100 krad guaranteed if all 10 samples comply with the post radiation electrical characteristics provided in Table 7: ESCC 5201/004 post radiation electrical characteristics * Delivery together with the parts of the radiation verification test (RVT) report of the particular wafer used to manufacture the products. This RVT includes the value of each parameter at 30, 50, 70 and 100 krad (Si) and after 24 hour annealing at room temperature and after an additional 168 hour annealing at 100C. Table 7. ESCC 5201/004 post radiation electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit ICBO Collector cut-off current (IE = 0) VCB = 90 V - 10 nA IEBO Emitter cut-off current (IC = 0) VEB = 5 V - 10 nA Collector-base breakdown voltage (IE = 0) IC = 100 A 140 - V Collector-emitter V(BR)CEO(1) breakdown voltage (IB = 0) IC = 30 mA 80 - V V(BR)EBO Emitter-base breakdown voltage (IC = 0) IE = 100 A 7 - V VCE(sat) (1) Collector-emitter saturation voltage IC = 150 mA IC = 500 mA IB = 15 mA IB = 50 mA - 0.2 0.5 V V VBE(sat) (1) Base-emitter saturation voltage IC = 150 mA IB = 15 mA - 1 V IC = 10 mA IC = 150 mA IC = 500 mA VCE = 10 V VCE = 10 V VCE = 10 V V(BR)CBO [hFE] (1) Post irradiation gain calculation (2) [45] [50] [25] - [300] 1. Pulsed duration = 300 s, duty cycle > 2 % 2. The post-irradiation gain calculation of [hFE], made using hFE measurements from prior to and on completion of irradiation testing and after each annealing step if any, shall be as specified in MILSTD-750 method 1019. 10/23 DocID15354 Rev 12 2N3700HR Radiation hardness assurance Table 8. Radiation summary Radiation test 100 krad ESCC Wafer tested each Part tested 5 biased + 5 unbiased Dose rate 0.1 rad/s Acceptance MIL-STD-750 method 1019 Displacement damage Optional Agency part number (ex) 5202/001/04R (1) ST part number (ex) SOC3700RHRG Documents CoC +RVT 1. Example of the 2N3700 in LCC-3 gold finish. DocID15354 Rev 12 11/23 23 Package information 4 2N3700HR Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK(R) is an ST trademark. 12/23 DocID15354 Rev 12 2N3700HR 4.1 Package information UB package information Figure 8. UB package outline 8206487_1 DocID15354 Rev 12 13/23 23 Package information 2N3700HR Table 9. UB package mechanical data mm. Dim. Min. 14/23 Typ. Max. A 1.16 1.42 C 0.46 0.51 0.56 D 0.56 0.76 0.96 E 0.92 1.02 1.12 F 1.95 2.03 2.11 G 2.92 3.05 3.18 I 2.41 2.54 2.67 J 0.42 0.57 0.72 K 1.37 1.52 1.67 L 0.41 0.51 0.61 M 2.46 2.54 2.62 N 1.81 1.91 2.01 r 0.20 r1 0.30 r2 0.56 DocID15354 Rev 12 2N3700HR 4.2 Package information LCC-3 package information Figure 9. LCC-3 package outline N 1 2 3 0041211_12 DocID15354 Rev 12 15/23 23 Package information 2N3700HR Table 10. LCC-3 package mechanical data mm. Dim. Min. Max. A 1.16 C 0.45 0.50 0.56 D 0.60 0.76 0.91 E 0.91 1.01 1.12 F 1.95 2.03 2.11 G 2.92 3.05 3.17 I 2.41 2.54 2.66 J 0.42 0.57 0.72 K 1.37 1.52 1.67 L 0.40 0.50 0.60 M 2.46 2.54 2.62 N 1.80 1.90 2.00 R 16/23 Typ. 1.42 0.30 DocID15354 Rev 12 2N3700HR 4.3 Package information TO-18 package information Figure 10. TO-18 package outline ) ( ' & $ % / * , + B5(9 DocID15354 Rev 12 17/23 23 Package information 2N3700HR Table 11. TO-18 mechanical data mm. Dim. 18/23 Min. Typ. Max. A 12.70 13.20 14.20 B 0.41 0.45 0.48 C 0.36 0.47 D 4.88 5.33 E 4.63 4.70 F 5.31 5.45 G 2.49 2.54 2.59 H 0.80 0.90 1.00 I 0.95 1.00 1.05 L 42 45 48 DocID15354 Rev 12 Order codes 2N3700HR 5 Table 12. Ordering information DocID15354 Rev 12 Agency specification EPPL Quality level Radiation level(1) Package Lead finish Marking(2) Packing J2N3700UB1 - - Engineering model JANS - UB Gold J3700UB1 WafflePack 2N3700UB1 - - Engineering model ESCC - UB Gold 2N3700UB1 WafflePack SOC37001 - - Engineering model ESCC - LCC-3 Gold SOC37001 WafflePack JANSR2N3700UBG MIL-PRF-19500/391 - JANSR 100 krad high and low dose rate UB Gold JSR3700 WafflePack JANSR2N3700UBT MIL-PRF-19500/391 - JANSR 100 krad high and low dose rate UB Solder Dip JSR3700 WafflePack JANS2N3700UBG MIL-PRF-19500/391 - JANS - UB Gold JS3700 WafflePack JANS2N3700UBT MIL-PRF-19500/391 - JANS - UB Solder Dip JS3700 WafflePack 2N3700RUBG 5201/004/06R Target ESCC Flight 100 krad low dose rate UB Gold 520100406R WafflePack 2N3700RUBT 5201/004/07R Target ESCC Flight 100 krad low dose rate UB Solder Dip 520100407R WafflePack 2N3700UBG 5201/004/06 Target ESCC Flight - UB Gold 520100406 WafflePack 2N3700UBT 5201/004/07 Target ESCC Flight - UB Solder Dip 520100407 WafflePack SOC3700RHRG 5201/004/04R Yes ESCC Flight 100 krad low dose rate LCC-3 Gold 520100404R WafflePack SOC3700RHRT 5201/004/05R Yes ESCC Flight 100 krad low dose rate LCC-3 Solder Dip 520100405R WafflePack SOC3700HRG 5201/004/04 Yes ESCC Flight - LCC-3 Gold 520100404 WafflePack Order codes 19/23 CPN CPN Agency specification EPPL Quality level Radiation level(1) Package Lead finish Marking(2) Packing SOC3700HRT 5201/004/05 Yes ESCC Flight - LCC-3 Solder Dip 520100405 WafflePack 2N3700RHRG 5201/004/01R - ESCC Flight 100 krad low dose rate TO-18 Gold 520100401R Strip Pack 2N3700RHRT 5201/004/02R - ESCC Flight 100 krad low dose rate TO-18 Solder Dip 520100402R Strip Pack 2N3700HRG 5201/004/01 - ESCC Flight - TO-18 Gold 520100401 Strip Pack 2N3700HRT 5201/004/02 - ESCC Flight - TO-18 Solder Dip 520100402 Strip Pack Order codes 20/23 Table 12. Ordering information (continued) 1. High dose rate as per MIL-PRF-19500 specification group D, subgroup 2 inspection. Low dose rate as per ESCC specification 22900. DocID15354 Rev 12 2. Specific marking only. The full marking includes in addition: he Engineering Models: ST logo, date code; country of origin (FR). For ESCC flight parts: ST logo, date code, country of origin (FR), ESA logo, serial number of the part within the assembly lot. For JANS flight parts: ST logo, date code, country of origin (FR), manufacturer code (CSTM), serail number of the part within the assembly lot. Contact ST sales office for information about the specific conditions for: * Products in die form * Other JANS quality levels * Tape and reel packing 2N3700HR 2N3700HR Shipping details 6 Shipping details 6.1 Date code Data code xyywwz is structured as described below: Table 13. Date code x 6.2 EM (ESCC and JANS) 3 ESCC flight - JANS flight (diffused in Singapore) W yy ww z last two digits of the year week digits lot index in the week Documentation Table 14. Documentation provided for each type of product Quality level Radiation level Engineering model - - JANS Flight - Certificate of conformance MIL-STD 100krad Documentation Certificate of conformance 50 rad/s radiation verification test report JANSR Flight ST 100Krad - Certificate of conformance 0.1 rad/s radiation verification test report on each wafer Certificate of conformance ESCC Flight Certificate of conformance 100 krad 0.1 rad/s radiation verification test report DocID15354 Rev 12 21/23 23 Revision history 7 2N3700HR Revision history Table 15. Document revision history 22/23 Date Revision Changes 10-Jan-2008 1 Initial release 07-Jan-2010 2 Modified Table 1: Device summary 26-Jul-2010 3 Modified Table 1: Device summary, added Table 10 on page 15 30-Nov-2011 4 - Modified: Table 6 on page 9 - Added: Section 2.3: Electrical characteristics (curves) - Minor text change in the document title on the coverpage 17-Apr-2013 5 Added: Section 3: Radiation hardness assurance 11-Jun-2013 6 Updated order codes in Table 1: Device summary and Table 12: Ordering information. Updated Section 3: Radiation hardness assurance. Minor text changes. 18-Sep-2013 7 Updated order codes in Table 1: Device summary and Table 12: Ordering information. 25-Mar-2014 8 Updated order codes in Table 1: Device summary and Table 12: Ordering information. Updated Section 3: Radiation hardness assurance. 29-May-2014 9 Updated Table 1: Device summary and Table 12: Ordering information. 29-Jul-2014 10 Updated Table 5: ESCC 5201/004 electrical characteristics. 20-Jul-2015 11 Updated Section 4: Package information. Minor text changes. 19-Aug-2015 12 Updated Section 4.3: TO-18 package information. Minor text changes. DocID15354 Rev 12 2N3700HR IMPORTANT NOTICE - PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST's terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers' products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. (c) 2015 STMicroelectronics - All rights reserved DocID15354 Rev 12 23/23 23