This is information on a product in full production.
August 2015 DocID15354 Rev 12 1/23
2N3700HR
Hi-Rel 80 V, 1 A NPN transistor
Datasheet
-
production data
Figure 1. Internal schematic diagram
Features
•Hermetic packages
•ESCC and Jans qualified
•Up to 100 krad(Si) low dose rate
Description
The 2N3700HR is a NPN transistor specifically
designed for aerospace and Hi-Rel applications. It
is available in the JAN qualification system (MIL-
PRF19500) and in the ESCC qualification system
(ESCC 5000). In case of discrepancies between
this datasheet and the relevant agency
specification, the latter takes precedence.
TO-18
LCC-3
3
1
2
UB
3
1
2
4
3
1
2
Pin 4 in UB is connected to the metallic lid
V
(BR)CEO
80 V
I
C
(max) 1 A
HFE at 10 V - 150 mA >100
Table 1. Device summary
Device Qualification
system Agency
specification Package Radiation level EPPL
JANSR2N3700UBx JANSR MIL-PRF-19500/391 UB 100 krad
high and low dose rate -
JANS2N3700UBx JANS MIL-PRF-19500/391 UB - -
2N3700RUBx ESCC Flight 5201/004 UB 100 krad - low dose rate Target
2N370 0UBx ESCC Flight 5201/004 UB - Ta rge t
SOC3700RHRx ESCC Flight 5201/004 LCC-3 100 krad - low dose rate Yes
SOC3700H Rx ESCC Flight 5201/004 LCC-3 - Yes
2N3700RHRx ESCC Flight 5201/004 TO-18 100 krad - low dose rate -
2N3700HR x ESCC Flight 52 01/0 04 T O-1 8 - -
www.st.com
Contents 2N3700HR
2/23 DocID15354 Rev 12
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 JANS electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.2 ESCC electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.3 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
2.4 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3 Radiation hardness assurance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
4.1 UB package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
4.2 LCC-3 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
4.3 T O-218 package informati on . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
5 Order codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
6 Shipping details . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
6.1 Date code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
6.2 Documentation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
7 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
DocID15354 Rev 12 3/23
2N3700HR Electrical ratings
23
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
V
CBO
Collector-base voltage (I
E
= 0) 140 V
V
CEO
Collector-emitter voltage (I
B
= 0) 80 V
V
EBO
Emitter-base voltage (I
C
= 0) 7 V
I
C
Collector current 1 A
P
tot
Total dissipation at T
amb
= 25 °C
for 2N3700HR 0.5 W
for SOC3700HRB 0.5 W
for SOC3700HRB
(1)
1. When mounted on a 15 x 15 x 0.6 mm ceramic substrate.
0.76 W
Total dissipation at T
c
= 25 °C for 2N3700HR 1.8 W
T
stg
Storage temperature -65 to 200 °C
T
J
Max. operating junction temperature 200 °C
Table 3. Thermal data
Symbol Parameter LCC-3 and UB TO-18 Unit
R
thJC
Thermal res istance jun cti on-c as e
(max) for JAN --
°C/W
Thermal res istance jun cti on-c as e
(max) for ESCC 350 97
R
thJSP(IS)
Thermal res istance jun cti on-s ol der
pad (infinite sink) (max) for JAN 90 -
Thermal res istance jun cti on-s ol der
pad (infinite sink) (max) for ESCC - -
R
thJA
Thermal res istance jun cti on-a mb ien t
(max) for JAN 325 -
Thermal res istance jun cti on-a mb ien t
(max) for ESCC 240
(1)
1. When mounted on a 15 x 15 x 0.6 mm ceramic substrate.
350
Ele ctr ical characteristics 2N3700 HR
4/23 DocID15354 Rev 12
2 Electrical characteristics
JANS and ESCC version of the products are assembled and tested in compliance with the
agency specification it is qualified in. The electrical characteristics of each version are
provide d in dedicated ta bles.
T
case
= 25 °C unless otherwise specified.
2.1 JANS electrical characteristics
Table 4. JANS electrical characteristics
Symbol Parameter Test cond ition s Min. Typ. Max. Unit
I
CBO
Collector cut-off
current (I
E
= 0) V
CB
= 140 V - 10 µA
I
CES
Collector cut-off
current (I
E
= 0) V
CE
= 90 V
V
CE
= 90 V, T
amb
= 150
°C
-10
5nA
µA
I
EBO
Emitter cut-off current
(I
C
= 0) V
EB
= 5 V
V
EB
= 7 V -10
10 nA
µA
V
(BR)CEO
Collector-emitter
breakd own vo ltage
(I
B
= 0) I
C
= 30 mA - 80 V
V
CE(sat)
Collector-emitter
saturation voltage I
C
= 150 mA I
B
= 15 mA
I
C
= 500 mA I
B
= 50 mA -0.2
0.5 V
V
V
BE(sat)
Base-emitter
saturation voltage I
C
= 150 mA I
B
= 15 mA - 1.1 V
h
FE
DC current gain
I
C
= 0.1 mA V
CE
= 10 V 50 - 200
I
C
= 10 mA V
CE
= 10 V 90 -
I
C
= 150 mA V
CE
= 10 V 100 - 300
I
C
= 150 mA V
CE
= 10 V
T
amb
= -55
°C
40 -
I
C
= 500 mA V
CE
= 10 V 50 - 200
I
C
= 1 A V
CE
= 10 V 15 -
h
fe
Small signal current
gain
V
CE
= 5 V I
C
= 1 mA
f = 1 kHz 80 - 400
V
CE
= 10 V I
C
= 50 mA
f = 20 MHz 5-20
C
obo
Out put capacitance
(I
E
= 0) V
EB
= 0.5 V
100 kHz; f = 1 MHz -12pF
C
ibo
Out put capacitance
(I
E
= 0) V
EB
= 0.5 V
100 kHz; f = 1 MHz -60pF
DocID15354 Rev 12 5/23
2N3700H R Electri cal chara ct er istics
23
2.2 ESCC electrical characteristics
NF Noise figure V
CE
= 10 V I
C
= 100 µA
R
g
= 1 kW, power bandwidth -4dB
r'b,Cc
(1)
Collector-base time
constant V
CB
=10 V; I
C
=10 mA;
f=79.8 MHz - 400 ps
t
off
+ t
off
Switching times see circuit Figure 6 -30ns
1. This parameter may be determined by applying an rf signal voltage of 1.0 volt (rms) across the collector-
base terminals, and measuring the ac voltage drop (V eb ) with a high- impedance rf voltmeter across the
emitter-base terminals. With f = 79.8 MHz used for the 1.0 volt signal, the following computation applies:
r'b , Cc(ps) = 2 X Veb (mV).
Table 4. JANS electrical characteristics (continued)
Symbol Parameter Test cond ition s Min. Typ. Max. Unit
Table 5. ESCC 5201/004 electrical characteristics
Symbol Parameter Test cond ition s Min. Typ. Max. Unit
I
CBO
Collector cut-off
current (I
E
= 0) V
CB
= 90 V - 10 nA
V
CB
= 90 V, T
amb
= 150 °C - 10 µA
I
EBO
Emitter cut-off current
(I
C
= 0) V
EB
= 5 V - 10 nA
V
(BR)CBO
Collector-base
breakd own vo ltage
(I
E
= 0) I
C
= 100 µA 140 - V
V
(BR)CEO(1)
Collector-emitter
breakd own vo ltage
(I
B
= 0) I
C
= 30 mA 80 - V
V
(BR)EBO
Emitter-base
breakd own vo ltage
(I
C
= 0) I
E
= 100 µA 7 - V
V
CE(sat) (1)
Collector-emitter
saturation voltage I
C
= 150 mA I
B
= 15 mA
I
C
= 500 mA I
B
= 50 mA -0.2
0.5 V
V
BE(sat) (1)
Base-emitter
saturation voltage
I
C
= 150 mA I
B
= 15 mA
I
C
= 150 mA I
B
= 15 mA;
T
amb
= 110 °C -1
0.9 V
h
FE
DC current gain
I
C
= 10 mA, V
CE
= 10 V 90 -
I
C
= 150 mA, V
CE
= 10 V 100 - 300
I
C
= 500 mA, V
CE
= 10 V 50 -
I
C
= 150 mA, V
CE
= 10 V;
T
amb
= -55 °C 40 -
h
fe
Small signal current
gain I
C
= 50 mA, V
CE
= 10 V ;
f = 20 MHz 5-
Ele ctr ical characteristics 2N3700 HR
6/23 DocID15354 Rev 12
2.3 Electrical characteristics (curves)
C
CBO
Out put capacitance
(I
E
= 0) V
CB
= 10 V, f = 1 MHz - 12 pF
C
IBO
Input capacitance
(I
C
= 0) V
EB
= 0.5 V, f = 1 MHz - 60 pF
1. Pulsed duration = 300 µs, duty cycle > 2 %
Table 5. ESCC 5201/004 electrical characteristics (continued)
Symbol Parameter Test cond ition s Min. Typ. Max. Unit
Figure 2. DC current gain (V
CE
=1 V) Figure 3. DC current gain (V
CE
=10 V)
Figure 4. Collector emitter saturation
voltage Figure 5. Base emitter saturation voltage
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DocID15354 Rev 12 7/23
2N3700H R Electri cal chara ct er istics
23
2.4 Test circuits
Figure 6. JANS non saturated switching-time test circuit
1.
NOTES:
2.
The rise time (t
r
) of the applied pulse shall be ≤ 2.0 ns, duty cycle ≤ 2 percent and the
generator source impedance shall be 50 ohms.
Sampling oscilloscope: Z
IN
≥ 100 kΩ, C
IN
≤ 12 pF, rise time ≤ 2.0 ns.
+18 V
Gipd040620131551FSR
Ele ctr ical characteristics 2N3700 HR
8/23 DocID15354 Rev 12
Figure 7. ESCC resistive load switching test circuit
1. Fast electronic switch
2. Non-inductive resistor
DocID15354 Rev 12 9/23
2N3700HR Radiation hardness assurance
23
3 Radiation hardness assurance
The products guaranteed in radiation within the JANS system fully comply with the MIL-
PRF-19500/255 specification.
The products guaranteed in radiation within the ESCC system fully comply with the ESCC
5201/004 and ESCC 22900 specifications.
JANS radiation assurance
ST JANS parts guaranteed at 100 krad (Si), tested, in full compliancy with the MIL-PRF-
19500 specification, specifically the Group D, subgroup 2 inspection, between 50 and 300
rad/s. On top of the standard JANSR high dose rate by wafer lot guarantee, ST 2N3700HR
series include an additional wafer by wafer 100 krad Low dose rate guarantee at 0.1 rad/s,
identical to the ESCC 100 krad guarantee. It is supported with the same Radiation
Verification Test report provided with each shipment. A brief summary of the standard High
Dose Rate by wafer lot JANSR guarantee is provided below:
•All test are performed in accordance to MIL-PRF-19500 and test method 1019 of MIL-
STD-750 for total Ionizing dose.
•The table below provides for each monitored parameters of the test conditions and the
acceptance criteria.
Table 6. MIL-PRF-19500 (test method 1019) post radiation electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
CBO
Collector cut-off
current (I
E
= 0) V
CB
= 140 V - 20 µA
I
CES
Collector-emitter cut-
off current V
CE
= 90 V - 20 nA
I
EBO
Emitter cut-off current
(I
C
= 0) V
EB
= 5 V
V
EB
= 7 V -20
20 nA
µA
V
(BR)CEO
Collector-emitter
breakdown voltage
(I
B
= 0) I
C
= 30 mA - 80 V
V
CE(sat)
Collector-emitter
saturati on vol t age I
C
= 150 mA I
B
= 15 mA
I
C
= 500 mA I
B
= 50 mA -0.23
0.58 V
V
V
BE(sat)
Base-emitter
saturati on vol t age I
C
= 150 mA I
B
= 15 mA - 1.1 V
[h
FE
]
Post irradiat ion gain
calculation
I
C
= 150 mA V
CE
= 10 V [50]
(1)
1. See method 1019 of MIL-STD-750 for how to determine [h
FE
] by first calculating the delta (1/h
FE
) from the
pre- and post-radiation h
FE
. Notice the [h
FE
] is not the same as h
FE
and cannot be measured directly. The
[h
FE
] value can never exceed the pre-radiation minimum h
FE
that it is based upon.
-300
I
C
= 0.1 mA V
CE
= 10 V [25 ]
(1)
-200
I
C
= 10 mA V
CE
= 10 V [45 ]
(1)
-
I
C
= 500 mA V
CE
= 10 V [25]
(1)
-200
I
C
= 1.0 A V
CE
= 10 V [7.5]
(1)
-
Radiation hardness assurance 2N3700HR
10/23 DocID15354 Rev 12
ESCC radiation assurance
Each product lot is tested according to the ESCC basic specification 22900, with a minimum
of 11 samples per diffusion lot and 5 samples per wafer, one sample being kept as
unirradiated sample, all of them being fully compliant with the applicable ESCC generic
and/o r detailed speci fic ati on.
ST goes beyond the ESCC specification by performing the following procedure:
•Test of 11 pieces by wafer, 5 biased at least 80% of V
(BR)CEO
, 5 unbiased and 1 kept
for reference
•Irradiation at 0.1 rad (Si)/s
•Acceptance criteria of each individual wafer if as 100 krad guaranteed if all 10 samples
comply with the post radiation electrical characteristics provided in Table 7: ESCC
5201/004 post radiation electrical characteristics
•Delivery together with the parts of the radiation verification test (RVT) report of the
particular wafer used to manufacture the products. This RVT includes the value of each
parameter at 30, 50, 70 and 100 krad (Si) and after 24 hour annealing at room
temperature and after an additional 168 hour annealing at 100°C.
Table 7. ESCC 5201/004 post radiation electrical characteristics
Symbol Parameter Test cond ition s Min. Typ. Max. Unit
I
CBO
Collector cut-off
current (I
E
= 0) V
CB
= 90 V - 10 nA
I
EBO
Emitter cut-off current
(I
C
= 0) V
EB
= 5 V - 10 nA
V
(BR)CBO
Collector-base
breakd own vo ltage
(I
E
= 0) I
C
= 100 µA 140 - V
V
(BR)CEO(1)
1. Pulsed duration = 300 µs, duty cycle > 2 %
Collector-emitter
breakd own vo ltage
(I
B
= 0) I
C
= 30 mA 80 - V
V
(BR)EBO
Emitter-base
breakd own vo ltage
(I
C
= 0) I
E
= 100 µA 7 - V
V
CE(sat) (1)
Collector-emitter
saturation voltage I
C
= 150 mA I
B
= 15 mA
I
C
= 500 mA I
B
= 50 mA -0.2
0.5 V
V
V
BE(sat) (1)
Base-emitter
saturation voltage I
C
= 150 mA I
B
= 15 mA - 1 V
[h
FE
]
(1)
Post irradiation gain
calculation
(2)
2. The post-irradiation gain calculation of [h
FE
], made using h
FE
measurements from prior to and on
completion of irradiation testing and after each annealing step if any, shall be as specified in MILSTD-750
method 1019.
I
C
= 10 mA V
CE
= 10 V
I
C
= 150 mA V
CE
= 10 V
I
C
= 500 mA V
CE
= 10 V
[45]
[50]
[25]
-[300]
DocID15354 Rev 12 11/23
2N3700HR Radiation hardness assurance
23
Table 8. Radiation summary
Radiation test 100 krad ESCC
Wafer tested each
Part tested 5 biased + 5 unbiased
Dose rate 0.1 rad/s
Acceptance MIL-STD-750 method 1019
Displacement damage Optional
Agency part number (ex) 5202/001/04R
(1)
1. Example of the 2N3700 in LCC-3 gold finish.
ST part number (ex) SOC3700RHRG
Documents CoC +RVT
Package information 2N3700HR
12/23 DocID15354 Rev 12
4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK
®
is an ST trademark.
DocID15354 Rev 12 13/23
2N3700HR Package information
23
4.1 UB package information
Figure 8. UB package outline
8206487_1
Package information 2N3700HR
14/23 DocID15354 Rev 12
Table 9. UB package mechanical data
Dim. mm.
Min. Typ. Max.
A 1.16 1.42
C 0.46 0.51 0.56
D 0.56 0.76 0.96
E 0.92 1.02 1.12
F 1.95 2.03 2.11
G 2.92 3.05 3.18
I 2.41 2.54 2.67
J 0.42 0.57 0.72
K 1.37 1.52 1.67
L 0.41 0.51 0.61
M 2.46 2.54 2.62
N 1.81 1.91 2.01
r 0.20
r1 0.30
r2 0.56
DocID15354 Rev 12 15/23
2N3700HR Package information
23
4.2 LCC-3 package information
Figure 9. LCC-3 package outline
21
3
N
0041211_12
Package information 2N3700HR
16/23 DocID15354 Rev 12
Table 10. LCC-3 package mechanical data
Dim. mm.
Min. Typ. Max.
A1.16 1.42
C 0.45 0.50 0.56
D 0.60 0.76 0.91
E 0.91 1.01 1.12
F 1.95 2.03 2.11
G 2.92 3.05 3.17
I 2.41 2.54 2.66
J 0.42 0.57 0.72
K 1.37 1.52 1.67
L 0.40 0.50 0.60
M 2.46 2.54 2.62
N 1.80 1.90 2.00
R0.30
DocID15354 Rev 12 17/23
2N3700HR Package information
23
4.3 TO-18 package information
Figure 10. TO-18 package outline
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Package information 2N3700HR
18/23 DocID15354 Rev 12
Table 11. TO-18 mechanical data
Dim. mm.
Min. Typ. Max.
A 12.70 13.20 14.20
B 0.41 0.45 0.48
C0.36 0.47
D 4.88 5.33
E 4.63 4.70
F 5.31 5.45
G 2.49 2.54 2.59
H 0.80 0.90 1.00
I 0.95 1.00 1.05
L 42° 45° 48°
DocID15354 Rev 12 21/23
2N3700HR Shipping details
23
6 Shipping details
6.1 Date code
Data code xyywwz is structured as described below:
6.2 Documentation
Table 13. Date code
xyywwz
EM
(ESCC and JANS) 3
last two digits of
the year week digits lot index in the
week
ESCC flight -
JANS flight
(diffused in
Singapore) W
Table 14. Documentation provided for each type of product
Quality level Radiation level Documentation
Engineering model - -
JANS Flight - Certificate of conformance
JANSR Flight MIL-STD 100krad Certific ate of conform anc e
50 rad/s radiation verification test report
ST 100Krad Certif ic ate of con form anc e
0.1 rad/s radiation verification test report on each wafer
ESCC Flight
- Certific ate of con form anc e
100 k rad Certificate of conform anc e
0.1 rad/s radiation verification test report
Revision history 2N3700HR
22/23 DocID15354 Rev 12
7 Revision history
Table 15. Document revision history
Date Revision Changes
10-Jan-2008 1 Initial release
07-Jan-2010 2 Modified Table 1: Device summary
26-Jul-2010 3 Modified Table 1: Device summary, added Table 10 on page 15
30-Nov-2011 4 – Modified: Table 6 on page 9
– Added: Section 2.3: Electrical characteristics (curves)
– Minor text chan ge in the doc um en t title on the cov erpage
17-Apr-2013 5 Added: Section 3: Radiation hardness assurance
11-Jun-2013 6
Updated order codes in Table 1: Device summary and Table 12:
Ordering information.
Updated Section 3: Radiation hardness assurance.
Minor text chan ges .
18-Sep-2013 7 Updated order codes in Table 1: Device summary and Table 12:
Ordering information.
25-Mar-2014 8 Updated order codes in Table 1: Devi ce summary and Table 12:
Ordering information.
Updated Section 3: Radiation hardness assurance.
29-May-2014 9 Updated Table 1: Device summary and Table 12: Ordering
information.
29-Jul-2014 10 Updated Table 5: ESCC 5201/004 electrical characteristics.
20-Jul-2015 11 Updated Section 4: Package information.
Minor text chan ges .
19-Aug-2015 12 Updated Section 4.3: TO -18 p ac ka ge inf orm ati on.
Minor text chan ges .
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