2SJ551(L), 2SJ551(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-647B (Z) 3rd. Edition Jul. 1998 Features * Low on-resistance R DS(on) = 0.050 typ. * Low drive current. * 4V gate drive devices. * High speed switching. Outline LDPAK 4 4 D 1 1 G S 2 3 2 3 1. Gate 2. Drain 3. Source 4. Drain 2SJ551(L),2SJ551(S) Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Drain to source voltage VDSS -60 V Gate to source voltage VGSS 20 V Drain current ID -18 A -72 A -18 A -18 A 27 mJ 60 W Drain peak current I D(pulse) Body-drain diode reverse drain current I DR Avalanche current Avalanche energy I AP Note1 Note3 EAR Note3 Note2 Channel dissipation Pch Channel temperature Tch 150 C Storage temperature Tstg -55 to +150 C Note: 2 1. PW 10s, duty cycle 1 % 2. Value at Tc = 25C 3. Value at Tch = 25C, Rg 50 2SJ551(L),2SJ551(S) Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS -60 -- -- V I D = -10mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS 20 -- -- V I G = 100A, VDS = 0 Zero gate voltege drain current I DSS -- -- -10 A VDS = -60 V, VGS = 0 Gate to source leak current I GSS -- -- 10 A VGS = 16V, VDS = 0 Gate to source cutoff voltage VGS(off) -1.0 -- -2.0 V I D = -1mA, VDS = -10V Static drain to source on state RDS(on) -- 0.050 0.065 I D = -9A, VGS = -10V Note4 resistance RDS(on) -- 0.070 0.110 I D = -9A, VGS = -4V Note4 Forward transfer admittance |yfs| 10 16 -- S I D = -9A, VDS = -10V Note4 Input capacitance Ciss -- 1300 -- pF VDS = -10V Output capacitance Coss -- 650 -- pF VGS = 0 Reverse transfer capacitance Crss -- 180 -- pF f = 1MHz Turn-on delay time t d(on) -- 14 -- ns VGS = -10V, ID = -9A Rise time tr -- 95 -- ns RL =3.33 Turn-off delay time t d(off) -- 190 -- ns Fall time tf -- 135 -- ns Body-drain diode forward voltage VDF -- -1.0 -- V I F = -18A, VGS = 0 Body-drain diode reverse recovery time -- 70 -- ns I F = -18A, VGS = 0 diF/ dt =50A/s Note: t rr 4. Pulse test 3 2SJ551(L),2SJ551(S) Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area 1000 80 Drain Current I D (A) 60 40 20 0 50 100 150 Case Temperature -20 -16 10 s 30 PW DC 10 3 1 Operation in this area is limited by R DS(on) 10 0 1 m s s 0m =1 s( 1s era ho t) tio n (T c= 25 C ) Op 0.1 Ta = 25 C 3 0.1 0.3 1 10 Drain to Source Voltage V 200 Tc (C) Typical Output Characteristics -10 V -6 V -4 V Drain Current I D (A) 100 0.3 30 100 (V) DS Typical Transfer Characteristics -20 Pulse Test V DS = -10 V Pulse Test -3.5 V Drain Current I D (A) Channel Dissipation Pch (W) 300 -3 V -12 -8 -2.5 V -4 -16 -12 25C -8 Tc = 75C -25C -4 VGS = -2 V 0 4 -2 -4 -6 Drain to Source Voltage V -8 DS(V) -10 0 -1 -2 -3 Gate to Source Voltage V -4 (V) GS -5 2SJ551(L),2SJ551(S) Drain to Source Saturation Voltage vs. Gate to Source Voltage -2.0 -1.5 I D = -20 A -1.0 -10 A -5 A -0.5 -12 -4 -8 Gate to Source Voltage -16 -20 V GS (V) Static Drain to Source on State Resistance vs. Temperature 0.30 Pulse Test 0.25 0.20 I D = -20 A 0.15 0.10 -5, -10 A VGS = -4 V 0.05 -5, -10, -20 A -10 V 0 -40 0 40 80 120 160 Case Temperature Tc (C) Drain to Source On State Resistance R DS(on) ( W) -2.5 0 Static Drain to Source on State Resistance R DS(on) ( W) Pulse Test 0.2 0.1 VGS = -4 V 0.05 -10 V 0.02 0.01 -1 -2 -5 -10 -20 -50 -100 Drain Current I D (A) Forward Transfer Admittance vs. Drain Current 100 Forward Transfer Admittance |y fs | (S) Drain to Source Saturation Voltage V DS(on) (V) -3.0 Static Drain to Source on State Resistance vs. Drain Current 1 Pulse Test 0.5 30 Tc = -25 C 10 25 C 3 75 C 1 0.3 V DS = -10 V Pulse Test 0.1 -0.1 -0.3 -1 -3 -10 -30 Drain Current I D (A) -100 5 2SJ551(L),2SJ551(S) Body-Drain Diode Reverse Recovery Time 10000 Capacitance C (pF) Reverse Recovery Time trr (ns) 100 50 20 -2 Ciss 1000 100 10 0 -80 -100 0 6 V DS -8 -12 V DD = -50 V -25 V -10 V -16 I D = -18 A 16 32 Gate Charge 48 64 Qg (nc) -30 -40 -50 -20 80 V GS (V) 1000 V GS = -10 V, V DD = -30 V 500 PW = 5 s, duty < 1 % Switching Time t (ns) -60 V GS -4 Gate to Source Voltage V DS (V) Drain to Source Voltage -40 -20 Switching Characteristics 0 -20 -10 Drain to Source Voltage V DS (V) Dynamic Input Characteristics V DD = -10 V -25 V -50 V Crss 30 I DR (A) 0 Coss 300 -5 -10 -20 Reverse Drain Current VGS = 0 f = 1 MHz 3000 di / dt = 50 A / s V GS = 0, Ta = 25 C 10 -0.1 -0.2 -0.5 -1 Typical Capacitance vs. Drain to Source Voltage t d(off) 200 tf 100 50 tr t d(on) 20 10 -0.1 -0.2 -0.5 -1 -2 Drain Current -5 -10 -20 I D (A) 2SJ551(L),2SJ551(S) -10 V -16 -5 V V GS = 0, 5 V -12 -8 -4 Pulse Test 0 -0.4 -0.8 -1.2 Source to Drain Voltage -1.6 -2.0 Repetitive Avalanche Energy EAR (mJ) -20 Reverse Drain Current I DR (A) Maximum Avalanche Energy vs. Channel Temperature Derating Reverse Drain Current vs. Source to Drain Voltage 50 I AP = -18 A V DD = -25 V duty < 0.1 % Rg > 50 W 40 30 20 10 0 25 50 100 125 150 Channel Temperature Tch (C) V SD (V) Avalanche Test Circuit V DS Monitor 75 Avalanche Waveform EAR = L 1 2 * L * I AP * 2 I AP Monitor VDSS VDSS - V DD V (BR)DSS I AP Rg D. U. T V DS VDD ID Vin -15 V 50W 0 VDD 7 2SJ551(L),2SJ551(S) Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance g s (t) 3 Tc = 25C 1 D=1 0.5 0.3 0.2 0.1 q ch - c(t) = g s (t) * q ch - c q ch - c = 2.08 C/W, Tc = 25 C 0.1 0.05 PDM 0.02 1 lse 0.0 t pu o h 1s 0.03 0.01 10 D= PW T PW T 100 1m 100 m 10 m Pulse Width 1 Switching Time Test Circuit Waveform Vout Monitor Vin Monitor 10 PW (S) Vin 10% D.U.T. RL 90% Vin 50W -10 V V DD = -30 V Vout td(on) 8 90% 90% 10% 10% tr td(off) tf 2SJ551(L),2SJ551(S) Package Dimensions As of January, 2001 Unit: mm 2.54 0.5 (1.4) 2.54 0.5 11.3 0.5 10.0 1.27 0.2 0.2 0.86 +- 0.1 0.76 0.1 11.0 0.5 1.2 0.2 4.44 0.2 1.3 0.15 + 0.3 - 0.5 8.6 0.3 10.2 0.3 2.59 0.2 0.4 0.1 Hitachi Code JEDEC EIAJ Mass (reference value) LDPAK (L) -- -- 1.4 g 9 2SJ551(L),2SJ551(S) As of January, 2001 Unit: mm 2.54 0.5 0.2 0.86 +- 0.1 2.54 0.5 0.3 3.0 +- 0.5 1.27 0.2 1.2 0.2 7.8 7.0 (1.5) 0.2 0.1 +- 0.1 2.2 0.4 0.1 Hitachi Code JEDEC EIAJ Mass (reference value) 10 1.7 7.8 6.6 1.3 0.15 0.3 10.0 +- 0.5 8.6 0.3 (1.5) (1.4) 4.44 0.2 10.2 0.3 LDPAK (S)-(1) -- -- 1.3 g 2SJ551(L),2SJ551(S) As of January, 2001 Unit: mm (1.5) 7.8 7.0 1.7 7.8 6.6 1.3 0.2 0.3 10.0 +- 0.5 8.6 0.3 (1.5) (1.4) 4.44 0.2 10.2 0.3 0.2 0.1 +- 0.1 2.2 1.2 0.2 2.54 0.5 0.2 0.86 +- 0.1 2.54 0.5 0.3 5.0 +- 0.5 1.27 0.2 0.4 0.1 Hitachi Code JEDEC EIAJ Mass (reference value) LDPAK (S)-(2) -- -- 1.35 g 11 2SJ551(L),2SJ551(S) Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica Europe Asia Japan : : : : http://semiconductor.hitachi.com/ http://www.hitachi-eu.com/hel/ecg http://sicapac.hitachi-asia.com http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic Components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Asia Ltd. Hitachi Tower 16 Collyer Quay #20-00, Singapore 049318 Tel : <65>-538-6533/538-8577 Fax : <65>-538-6933/538-3877 URL : http://www.hitachi.com.sg Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585160 Hitachi Asia Ltd. (Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road, Hung-Kuo Building, Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon, Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://www.hitachi.com.hk Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan. Colophon 2.0 12