File No. 229 (RCA Solid State Division RF Power Transistors 2N3839 RCA-2N3839* is a double-diffused epitaxial planar transistor of the silicon n-p-n type. It is extremely use- ful in low-noise-amplifier, oscillator, and converter applications at frequencies up to 500 MHz in the com- mon-emitter configuration, and up to 1200 MHz, in the common-base configuration. The 2N3839 is mechanically and electrically like the 2N2857, but has a substantially lower noise figure. The 2N3839 utilizes a hermetically sealed four- lead JEDEC TO-72 package. All active elements of the transistor are insulated from the case, which may be grounded by means of the fourth lead in appli- cations requiring shielding of the device. Moximum Ratings, Absolute-Maximum Values: COLLECTOR-TO-BASE VOLTAGE, Vcopo -- 30 max. Vv COLLECTOR-TO-EMITTER VOLTAGE, VCEQ eet eee tee 15 max. Vv EMITTER-TO-BASE VOLTAGE, VEpo..-.-.-- 2.5 max. Vv COLLECTOR CURRENT, Ic ......----- 40 max. mA TRANSISTOR DISSIPATION, Pp: For operation with heat sink: eee ee eee 300 max. mW At case up to 25C nee aces above 25C For operation at ambient temperatures: At ambient up to 25C temperatures {oe 25C TEMPERATURE RANGE: Storage and Operating (Junction) LEAD TEMPERATURE (During Soldering): At distances > 1/32 inch from seating surface for 10 seconds max. * Formerly Dev. No. TA-2363 ** Measured at center of seating surface. ee e co le += ae 3] Ettore 2) 0.3-5 LC: F (NOTE 1) 2 t+ NOTE sy 2 uy VIN | (NOTE 2} 500 08-8 500 A f =a. 1 Rg502 = = 500 1/2 TURN, No. 16 WIRE: LOCATED 1/4" FROM AND PARALLEL TO L2 500 RESISTANCE VALUES (N OHMS. _ CAPACITANCE VALUES IW pF. S Veer 7.5V Q = 2N3839 7 ee 92csl4il2 Fig.] - Neutralized amplifier circuit used to measure 450-MHz power gain and noise figure for type 2N3839. SILICON N-P-N | EPITAXIAL PLANAR I TRANSISTOR JEDEC For Low-Noise UHF Applications 70-72 in Industrial and Military Equipment FEATURES @ very low device noise figure NF =3.4 dB max. as 450-MHz omplifier high gain-bandwidth product fy = 1000 MHz min. @ high converter (450-to-30 MHz) gain G. = 15 dB typ. for circuit bandwidth of approximately 2 MHz @ high power gain as neutralized amplifier Gpe = 12.5 dB min. at 450 MHz for circuit bandwidth of 20 MHz @ high power output as UHF oscillator P, =30 mW min., 40 mW typ. at 500 MHz = 20 mW typ. at 1 GHz @ low collector-to-base time constant rhiCo =7 ps typ. low collector-to-base feedback capacitance - C.1, = 0.6 pF typ. NOTE 1: (NEUTRALIZATION PROCEDURE): (A) CONNECT A 450-MHz SIGNAL GENERATOR (WITH Rg = 50 OHMS) TO THE INPUT TERMINALS OF THE AMPLIFIER, (B) CONNECT A 50-OHM RF VOLTMETER ACROSS THE OUTPUT TERMINALS OF THE AMPLIFIER. (C) APPLY NFB AND WITH THE SIGNAL GENERATOR ADJUSTED FOR 5 mV OUTPUT FROM THE AMPLI- FIER, TUNE Cy, C3, ANDC4 FOR MAXIMUM OUTPUT. (D)INTER- CHANGE THE CONNECTIONS TO THE SIGNAL GENERATOR AND THE RF VOLTMETER. () WITH SUFFICIENT SIGNAL APPLIED TO THE OUTPUT TERMINALS OF THE AMPLIFIER, ADJUST C2 FOR A MINIMUM INDICATION AT THE INPUT. (F) REPEAT STEPS (A), (B), AND (C) TO DETERMINE IF RETUNING IS NECESSARY. NOTE 2; Ly & L2SILVER-PLATED BRASS ROD, 1-1/2"LONG x 1/4"DIA. INSTALL AT LEAST 1/2"FROM NEAREST VERTICAL CHASSIS SURFACE. NOTE 3; EXTERNAL INTERLEAD SHIELD TO ISOLATE THE COLLECTOR LEAD FROM THE EMITTER AND BASE LEADS. 69 10-662N3839 File No. 229 ELECTRICAL CHARACTERISTICS, At an Ambient Temperature, T 4, of 25C, Unless Otherwise Specified TEST CONDITIONS LIMITS oc be o oc oc oc COLLECTOR-|COLLECTOR- } EMITTER- . EMITTER| BASE {COLLECTOR TYPE CHARACTERISTICS {SYMBOL | FREQUENCY) TO-BASE | TO-EMITTER | TO-BASE |cyrReNTICURRENT! CURRENT { 2N3R39 {UNITS VOLTAGE | VOLTAGE {VOLTAGE f Yop Voe VeB le 'p 'g MHz Vv Vv Vv mA mA mA Min. | Typ.| Max. Collector-Cutoff Current Ta = 25C | 18 0 0 | mA Ta = 150C CBO 5 0 1.0} yA Collector-to-Base BY 9 0.001 3) - )- Breakdown Voltage CBO V Collector-to-Emitter BV 0 3 15 V Breakdown Voltage CEO Emitter-to-Base B 0.01 0 ast - | - V Breakdown Voltage VeBo Static Forward Ci - | Current, nee 1 3 30 150 Transfer Ratio Smal|-Signal Forward h 0,001 6 2 50 220 Current-Transfer Ratio fe 1e0 6 5 10 20 Collector-to- Base b 0.1 to 1.0 10 0 0.6 | LOt oF Feedback Capacitance Cob p input Capacitance Cib Gite Lo 6.5 0 14 pF Coltector-to-Base < 2 1, 748 S Time Constant th'&c 318 8 p Smalt-Signal, Common- Emitter Power Gain in G 450 6 15 12.5 191 dB Neutralized Amplifier pe Circuit (See Fig. 2) Power Output as Oscillator |p > 500 10 12 20 mW (See Fig 2) 8 ~ UHF Measured Noise Figure} yp 450%4 6 15 3.91 dB (See Fig. 1) UHF Device Noise Figure NE aged 6 15 3.4] dB VHF Measured Noise Figure) NF gose 6 ] - 2 dB * Lead No.4 (case) not connected. b 3-terminal measurement with.emitter and case connected to guard terminal. Lead No.4 (case) grounded. d Generator resistance, Rg = 50 ohms. DOUBLE -STUB TUNER (Zo = 502) t+ 3 TURNS No. 16 250 WIRE 3/8" 9.D. a F=1/4 LONG CAPACITANCE VALUES IN pF. VEE Q = 2N3839 92cs 14int 70 Generator resistance, Rg = 400 ohms. Device noise figure is approximately 0.5 dB lower than the meas-- sured noise figure. The difference is due to the insertion loss at the input of the test circuit (0.25 dB) and the contribution of the following stages in the test setup (0.25 dB). Fig.2 - Oscillator circuit used to measure 500-MHz power output for type 2N3839.File No. 229 RATIO (hfe!) ~ SIGNAL & 3 wd 3 > Ee g = = 1 & 2 ry a 2 3 a < = [4 S a 2N3839 COMMON-EMITTER CIRCUIT, BASE INPUT; OUTPUT SHORT -CIRCUITED FREQUENCY (f) =100MHz AMBIENT TEMPERATURE (Ta)=25 C COLLECTOR-TO-EMITTER VOLTS (Woe)6 fo IS 20 25 30 36 COLLECTOR MILLIAMPERES (Ic) $2CS- 14169 Fig.3 - Small-Signal Beta Characteristic for Type 2N3839. -- AMBIENT TEMPERATURE (Ta) - CASE TEMPERATURE {T-) l TEMPERATURE C 92C0S$-12483Ri Fig.4 - Rating Chart for Type 2N3839. TWO-PORT ADMITTANCE P PARAMETERS AS FUNCTIONS OF COLLECTOR CURRENT tte) HT f COMMON EMITTER CIRCUIT, BASE INPUT; OUTPUT SHORT CIRCUITED ; FREQUENCY (f}= 450 MHz FHTtTt INPUT CONDUCTANCE (gj,) OR SUSCEPTANCE (bie) MILLIMHOS | E! AMBIENT TEMPERATURE (Ta): 25 C [?; COLLECTOR-TO-EMITTER VOLTS (Mi 9 5 a 3 a COMMON EMITTER CIRCUIT; INPUT SHORT-CIRCU. FREQUENCY (f)= G50 MHz | AMBIEN T TEMPERATURE {Tals = 25 c os WIT TER-VOLTS rCOc CORIO Az SUSCEPTANCE (boe) MILLIMHOS OUTPUT CONDUCTANCE {goe) OR OL nD 2 4 lo 2 COLLECTOR MILLIAMPERES (Ic) 92CSI2I5ORI Fig.5 - Input Admittance (yje). 2 4 6 8 10 42 COLLECTOR MILLIAMPERES (Ic) 92C8-12148RI Fig.6 - Output Admittance (ye). fe) OR FORWARD TRANSFER CONDUCTANCE (g. SUSCEPTANCE (bfe)MILLIMHOS. COMMON-EMITTER gineur BASE INPUT, = Ml AMBIENT TEMPERATURE (Ta) = 25C COLLECTOR-TO-EMITTER VOLTS (Vce)=6 TONS] "=: nN a oO = COMMON EMITTER CIRCUIT, INPUT ! SHORT CIRCUIT I= FREQUENCY IT) = 480 Mz AMBIENT TEMPERATURE (Tq) = REVERSE TRANSFER CONDUCTANCE (qy) OR SUSCEPTANCE (bre) MILLIMHOS 1 f ol Ny I aS i Te INEGLIG BLY, SMALL. at THIS FREQUENCY : (450 MHz) : 1 i : VOLTS S (Wee) = = 215; ICOLLECTOR-TO-EMIT,TER ote ; @, bre | | jobs 4 6 8 COLLECTOR MILLIAMPERES (Ic) 92CS-12149R) Fig.7 - Forward Transedmittance (yfe). 71 oO 2 4 6 =] (fe) 2 COLLECTOR MILLIAMPERES (Ic) 92C$12154R2 Fig.8 - Reverse Transadmittance (y;).2N3839 File No. 229 TWO-PORT ADMITTANCE (y) PARAMETERS AS FUNCTIONS OF FREQUENCY (f) SOLLECTOR-TO-EMITTER VOLTS (Vog} =6 MILLIAMPERES (Ic) #15 TEMPERATURE (Ta) = 25C INPUT CONDUCTANCE (gig) OR oO SUSCEPTANCE (bjg) MILLIMHOS Ey 10 100 1000 FREQUENCY (f) MHz 92CS -12)57RI Fig.9 - Input Admittance (y je}. COMMON-EMITTER CIRCUIT, BASE INPUT; OUTPUT SHORT-CIRCUITED COLLECTOR-TO-EMITTER VOLTS (VcE} =6 COLLECTOR MILLIAMPERES (Ic) =1.5 AMBIENT TEMPERATURE (Ta) = 25C x So 2 2 ut o 3 - oe 2 a =z Sg Oo a WwW a an 2 < o - SUSCEPTANCE (bfe}MILLIMHOS 800 FREQUENCY (f) -~MHz {000 92c$ -I2I52R1 Fig.11 - Forward Transadmittance (y fg). DIMENSIONAL OUTLINE JEDEC TO-72 230 MAX. 209. MIN. -t $95 MAX. 178 ny DIA. .210 MAX. | 170 MIN. + SEATING PLANE f 030 MAX. ae MIN. 4 LEADS _ 002 nis O17 T96F DIA. (NOTE 1) 100 a INSULATION X:050 a \ al Loe Ly DA. ase YA(NOTE 2) ne (NOTE 3) << SY 046 MAX. CNOTE 4 | 036 MIN. 92CS-12817 72 COMMON EMITTER CIRCUIT; INPUT COLLECTORTOEMITTER. VOLTS (Vce)= COLLECTOR MILLIAMPERES (Ic)=1.5 AMBIENT TEMPERATURE (Ta) = 25C OUTPUT SUSCEP TANCE FREQUENCY (f)-MHz 92CsI2ZIS6RZ Fig.10 - Output Admittance COMMONEMITTER CIRCUIT; INPUT SHORT ~CIRCUITED,] COLLECTORTOEMITTER VOLTS (Vog)=6 [ COLLECTOR MILLIAMPERES (I}*1.5 AMBIENT TEMPERATURE (Ta) = 25 C te [PSN i Poth JL _ o 1 ny 1 ot REVERSE TRANSFER CONDUCTANCE (gre) OR SUSCEPTANCE (bre}MILLIMHOS LLL i000 | ore 100 FREQUENCY (f)MHz mi 6 3 92CS (215tR3, Fig.12 - Reverse Transadmittance (yre). TERMINAL DIAGRAM Bottom View LEAD 1- EMITTER LEAD 2- BASE LEAD 3- COLLECTOR LEAD 4- CONNECTED TO CASE Note 1: The specified lead diameter applies in the zone be- tween 0.050 "and 0.250 "from the seating plane. From 0.250" to the end of the lead a maximum diameter of 0,021) "is held. Outside of these zones, the lead diameter is not controlled. Note 2: Maximum diameter leads at a gauging plane 0.054" + 0.001" ~ 0.000" below seating plane to be within 0.007" of their true location relative to max. width tab and to the maxi- mum 0.230" diameter measured with a suitable gauge. When gauge is not used, measurement will be made at seating plane, Note 3: For visual orientation only. Note 4: Tab jength to be 0,028" minimum - 0.048" maximum, and will be determined by subtracting diameter A from di- mension B.