MMBT4403LT1 - Rectron Semiconductor Inc.

RECTRON

SEMICONDUCTOR

FEATURES

*

Power dissipation

PCM: 0.3 W(Tamb=25OC)

Collector current

ICM: 0.6 A

Collector-base voltage

V(BR)CBO: - 40 V

Operating and storage junction temperature range

TJ,Tstg: -55OC to+150OC

MECHANICAL DATA

* Case: Molded plastic

* Epoxy: UL 94V-O rate flame retardant

* Lead: MIL-STD-202E method 208C guaranteed

* Mounting position: Any

* Weight: 0.008 gram

SOT-23

MMBT4403LT1

Dimensions in inches and (millimeters)

2006-3

ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted )

NOTES :

Max. Instantaneous Forward Voltage at IF= 10mA

CHARACTERISTICS SYMBOL UNITS

417

-

Volts

oC/WThermal Resistance Junction to Ambient

RATINGS

Zener Current ( see Table "Characteristics" )

Max. Steady State Power Dissipation (1) @TA=25oC Derate above 25OC

Max. Operating Temperature Range

Storage Temperature Range

SYMBOL

-

PD

TJ

TSTG

R θJA

VF

VALUE

MAX.

-

TYP.

-

MIN.

UNITS

-

mW

-

300

1. Alumina=0.4*0.3*0.024in.99.5% alumina

-55 to +150

oC

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 oC ambient temperature unless otherwise specified.

0.118(3.000)

0.012(0.30)

0.020(0.50)

0.003(0.080)

0.006(0.150)

0.110(2.800)

0.019(2.00)

0.071(1.80)

0.100(2.550)

0.089(2.250)

0.020(0.500)

0.012(0.300)

0.043(1.100)

0.035(0.900)

0.004(0.100)

0.000(0.000)

0.037(0.950)TYP

TECHNICAL SPECIFICATION

SOT-23 BIPOLAR TRANSISTORS

TRANSISTOR(PNP)

-

ELECTRICAL CHARACTERISTICS

(@TA=25OC unless otherwise noted)

OFF CHARACTERISTICS

ON CHARACTERISTICS(2)

Chatacteristic

Collector-Emitter Breakdown Voltage(2) (IC= -1.0 mAdc, IB= 0)

Collector-Base Breakdown Voltage (IC= -0.1mAdc, IE= 0)

Emitter-Base Breakdown Voltage (IE= -0.1mAdc, IC= 0)

Base Cutoff Current (VCE= -35Vdc, VBE(off)= -0.4Vdc)

Collector Cutoff Current (VCE= -35Vdc, VEB= -0.4Vdc)

DC Current Gain (IC= -0.1mAdc, VCE= -1.0Vdc)

(IC= -10mAdc, VCE= -1.0Vdc)

(IC= -1.0mAdc, VCE= -1.0Vdc)

V(BR)CEO -40 - Vdc

V(BR)CBO -40 - Vdc

V(BR)EBO -5.0 - Vdc

ICEX

IBEV - -0.1

- -0.1

hFE

30 -

-

60 -

100 -

100 300

µAdc

Symbol Min Max Unit

(IC= -150mAdc, VCE= -2.0Vdc)

Collector-Emitter Saturation Voltage (2) (IC= -150mAdc, IB= -15mAdc)

(IC= -500mAdc, IB= -50mAdc)

(IC= -500mAdc, VCE= -2.0Vdc)

Vdc

VCE(sat)

20 -

- -0.4

- -0.75

Vdc

VBE(sat)

-0.75 -0.95

- -1.3

Base-Emitter Saturation Voltage (2) (IC= -150mAdc, IB= -15mAdc)

(IC= -500mAdc, IB= -50mAdc)

RECTRON

SMALL-SIGNAL CHARACTERISTICS

SWITCHING CHARACTERISTICS

fT200 - MHz

Current-Gain-Bandwidth Product (IC= -20mAdc, VCE= -10Vdc, f= 100MHz)

Ccb

Ceb

- 8.5 pF

pF

td

tr

ts

tf

-

ns

hie

- 30

1.5 15 kohms

hre 0.1 8.0

60 500

X 10-

4

hfe

1.0 100

-

hoe

225

30

15

20

µmhos

Output Capacitance (VCB= -10Vdc, IE= 0, f= 1.0MHz)

Input Capacitance (VEB= -0.5Vdc, IC= 0, f= 1.0MHz)

Voltage Feedback Ratio (VCE= -10Vdc, IC= -1.0mAdc, f= 1.0kHz)

Output Admittance (VCE= -10Vdc, IC= -1.0mAdc, f= 1.0kHz)

(VCC= -30Vdc, VEB= -2.0Vdc, IC= -150mAdc, IB1= -15mAdc)

(VCC= -30Vdc, IC= -150mAdc, IB1= IB2= -15mAdc)

Input lmpedance (VCE= -10Vdc, IC= -1.0mAdc, f= 1.0kHz)

Small-Signal Current Gain (VCE= -10Vdc, IC= -1.0mAdc, f= 1.0kHz)

Delay Time

Rise Time

Storage Time

Fall Time

NOTES : 2. Pulse Test: Pulse Width<300µs,Duty Cycle<2.0%

--

RATING AND CHARACTERISTICS CURVES ( MMBT4403LT1 )

Figure 1. Capacitances

3.0

5.0

7.0

10

30

2.0

20

Figure 3. Turn-On Time

Figure 5. Storage Time

10

20

30

50

70

100

7.0

5.0

300

200

100

70

50

30

0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 10 20 30

10 20 30 50 70 100 200 300 500

CAPACITANCE(pF)

ts',STORAGE TIME(ns)

t,TIME(ns)

Q,CHARGE(nC)

REVERSE VOLTAGE(VOLTS)

IC,COLLECTOR CURRENT (mA)

Figure 4. Rise Times

10

20

30

50

70

100

7.0

5.0

10 20 30 50 70 100 200 300 500

IC,COLLECTOR CURRENT (mA)

10 20 30 50 70 100 200 300 500

Figure 2. Charge Data

0.2

0.3

0.5

0.7

1.0

10

0.1

2.0

3.0

5.0

7.0

25

O

C 100

O

C

VCC=30V

IC/IB=10

Ceb

QT

QA

Ccb

VCC=30V

tr @ VCC= 30V

tr @ VCC= 10V

td@ VBE(off)= 2V

td @ VBE(off)= 0V

IC/IB=10

IC/IB=20

IB1= IB2

t

s' =

t

s -1/8tf

RECTRON

RATING AND CHARACTERISTICS CURVES ( MMBT4403LT1 )

10

8.0

6.0

4.0

2.0

0

300

30

10

20

hie,INPUT IMPEDANCE(OHMS)

hoe,OUTPUT ADMITTANCE(

µ mhos

)

hre,VOLTAGE FEEDBACK RATIO(X 10-4)

500

700

1000

200

100

70

50

1k

2k

5k

10k

20k

50k

100k

500

200

100

5.0

2.0

0.5

1.0

0.2

0.1

0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10

50 100 200 500 1.0k 2.0k 5.0k 10k 20k 50k

100

500

50

20

10

5.0

2.0

1.0

NF,NOISE FIGURE (dB)hfe,CURRENT GAIN

NF,NOISE FIGURE (dB)

Figure 6.Frequency Effects

IC,COLLECTOR CURRENT(mAdc)IC,COLLECTOR CURRENT(mAdc)

Figure 8.Cuttent Gain Figure 9.Input Impedance

RS,SOURCE RESISTANCE(OHMS)

Figure 7.Source Resistance Effects

IC,COLLECTOR CURRENT(mAdc)IC,COLLECTOR CURRENT(mAdc)

Figure 11.Temperature CoefficientsFigure 10.Voltage Feedback Ratio

0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10

f,FREQUENCY(KHz)

4

6

8

10

2

0

0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100

IC = 1.0mA, RS = 430

Ω

VCE = -10Vdc, TA = 25OC

Bandwidth = 1.0Hz

IC = 500

µ

A, RS = 560

Ω

IC = 50

µ

A, RS = 2.7k

Ω

IC = 100

µ

A, RS = 1.6k

Ω

RS = OPTIMUM SOURCE RESISTANCE

f = 1 kHz

MMBT4403LT1 UNIT 1

MMBT4403LT1 UNIT 2

IC = 50

µ

A

100

µΑ

500µΑ

1.0mΑ

MMBT4403LT1 UNIT 1

MMBT4403LT1 UNIT 2

MMBT4403LT1 UNIT 1

MMBT4403LT1 UNIT 2

MMBT4403LT1 UNIT 1

MMBT4403LT1 UNIT 2

RECTRON

RATING AND CHARACTERISTICS CURVES ( MMBT4403LT1 )

Figure 12. DC Current Gain

Figure 13. Collector Saturation Region

Figure 14. "ON" Voltages Figure 15. Temperature Coefficients

0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500

0.005 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50

0.1 0..2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 0.1 0..2 0.5 1.0 2.0 5.0 10 20 50 100 200 500

hFE,NORMALIZED CURRENT GAIN

VCE,COLLECTOR - EMITTER VOLTAGE(VOLTS)

VOLTAGE(VOLTS)

COEFFICIENT(mV/OC)

IC,COLLECTOR CURRENT (mA)

IB,BASE CURRENT (mA)

IC,COLLECTOR CURRENT (mA) IC,COLLECTOR CURRENT (mA)

0.4

0.6

0.8

1.0

0.2

0

0.3

0.5

0.7

1.0

3.0

0.2

2.0

0.4

0.6

0.8

1.0

0.2

0

0.5

0

0.5

1.0

1.5

2.0

2.5

IC = 1.0 mA 10 mA 100 mA

TJ = 125OC

VCE = 1.0V

VCE = 10V

VBE(sat)@IC/IB = 10 ΘVC for VCE(sat)

500 mA

25OC

-55OC

TJ = 25OC

VBE(sat)@VCE = 10V

VCE(sat)@IC/IB = 10

ΘVS for VBE