PD - 90884B IRHN7054 JANSR2N7394U 60V, N-CHANNEL REF: MIL-PRF-19500/603 RADIATION HARDENED POWER MOSFET S URFACE MOUNT (SMD-1) (R) RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHN7054 100K Rads (Si) IRHN3054 300K Rads (Si) IRHN4054 600K Rads (Si) IRHN8054 1000K Rads (Si) R DS(on) 0.027 0.027 0.027 0.027 ID 35A 35A 35A 35A QPL Part Number JANSR2N7394U JANSF2N7394U JANSG2N7394U JANSH2N7394U SMD-1 HEXFET(R) technol- International Rectifiers RADHard ogy provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. Features: ! ! ! ! ! ! ! ! ! ! Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight Surface Mount Absolute Maximum Ratings Pre-Irradiation Parameter ID @ VGS = 12V, TC = 25C ID @ VGS = 12V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Package Mounting Surface Temperature Weight Units 35 30 283 150 1.2 20 500 35 15 3.5 -55 to 150 A W W/C V mJ A mJ V/ns o 300 (5sec) 2.6 (Typical ) C g For footnotes refer to the last page www.irf.com 1 8/9/01 IRHN7054 Pre-Irradiation @ Tj = 25C (Unless Otherwise Specified) Parameter Min BVDSS Drain-to-Source Breakdown Voltage BV DSS /T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current Typ Max Units 60 V 0.053 V/C 2.0 12 0.027 0.030 4.0 25 250 IGSS IGSS Qg Q gs Qgd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (Miller) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance 4.0 100 -100 200 60 75 27 100 75 75 Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance 4100 2000 560 Test Conditions VGS = 0V, ID = 1.0mA Reference to 25C, ID = 1.0mA VGS = 12V, ID = 30A VGS = 12V, ID = 35A VDS = VGS, ID = 1.0mA VDS > 15V, IDS = 30A VDS= 48V ,VGS=0V VDS = 48V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS =12V, ID = 35A VDS = 30V V S( ) Electrical Characteristics A nA nC VDD =30V, ID = 35A VGS =12V, RG = 2.35 ns nH Measured from the center of drain pad to center of source pad VGS = 0V, VDS = 25V f = 1.0MHz pF Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units IS ISM VSD t rr Q RR Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ton Forward Turn-On Time 35 283 1.4 280 2.2 Test Conditions A V nS C Tj = 25C, IS = 35A, VGS = 0V Tj = 25C, IF = 35A, di/dt 100A/s VDD 50V Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter R thJC RthJ-PCB Junction-to-Case Junction-to-PC board Min Typ Max Units 6.6 Test Conditions 0.83 C/W Soldered to a 1 inch square clad PC board Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page 2 www.irf.com Radiation Characteristics Pre-Irradiation IRHN7054 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation Parameter BVDSS V/5JD IGSS IGSS IDSS RDS(on) RDS(on) VSD 100K Rads(Si) Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source" On-State Resistance (TO-3) Static Drain-to-Source" On-State Resistance (SMD-1) Diode Forward Voltage" 300 - 1000K Rads (Si) Min Max U nits Units Test Conditions V VGS = 0V, ID = 1.0mA VGS = VDS, ID = 1.0mA VGS = 20V VGS = -20 V VDS=48V, VGS =0V VGS = 12V, ID =30A Min Max 60 2.0 4.0 100 -100 25 0.027 60 1.25 4.5 100 -100 50 0.04 A 0.027 0.04 VGS = 12V, ID =30A 1.4 1.4 V VGS = 0V, IS = 35A nA 1. Part numbers IRHN7054 (JANSR2N7394U) 2. Part number IRHN3054, IRHN4054 and IRHN8054 (JANSH2N7394U, JANSF2N7394U, JANSG2N7394U) International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area Ion I Br V DS(V) LET Energy Range @VGS=0V@VGS=-5V@VGS=-10V@VGS=-15V @VGS=-20V MeV/(mg/cm )) (MeV) (m) 59.9 345 32.8 60 60 45 40 30 36.8 305 39 40 35 30 25 20 80 VDS 60 BR 40 I 20 0 0 -5 -10 -15 -20 VGS Fig a. Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 3 IRHN7054 1000 Pre-Irradiation 1000 VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP 100 100 20s PULSE WIDTH TJ = 25 C 5.0V 10 1 10 100 5.0V 10 1 VDS , Drain-to-Source Voltage (V) RDS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 2.5 TJ = 25 C 100 TJ = 150 C V DS = 25V 20s PULSE WIDTH 6 7 8 9 10 11 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 4 100 Fig 2. Typical Output Characteristics 1000 5 10 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 10 20s PULSE WIDTH TJ = 150 C 12 ID = 50A 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 12V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature( C) Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com Pre-Irradiation VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 6000 Ciss 4000 Coss 2000 Crss 0 1 10 20 VGS , Gate-to-Source Voltage (V) C, Capacitance (pF) 8000 IRHN7054 ID = 35A VDS = 48V VDS = 30V 16 12 8 4 0 100 FOR TEST CIRCUIT SEE FIGURE 13 0 VDS , Drain-to-Source Voltage (V) 80 120 160 200 QG , Total Gate Charge (nC) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED BY RDS(on) TJ = 25 C 100 I D , Drain Current (A) ISD , Reverse Drain Current (A) 40 100 TJ = 150 C 10 1 0.4 V GS = 0 V 1.0 1.6 2.2 2.8 3.4 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage www.irf.com 1ms 10ms 10 1 4.0 100us TC = 25 C TJ = 150 C Single Pulse 1 10 100 1000 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 5 IRHN7054 Pre-Irradiation LIMITED BY PACKAGE VGS I D , Drain Current (A) D.U.T. RG 40 + -VDD VGS 30 Pulse Width 1 s Duty Factor 0.1 % 20 Fig 10a. Switching Time Test Circuit VDS 10 0 RD VDS 50 90% 25 50 75 100 125 150 TC , Case Temperature ( C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 1 Thermal Response (Z thJC ) 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01 0.001 0.00001 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 10 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com Pre-Irradiation IRHN7054 L D.U.T RG V/5 20V IAS DRIVER + - VDD 0.01 tp TOP 1000 15V VDS EAS , Single Pulse Avalanche Energy (mJ) 1200 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS A BOTTOM ID 16A 22A 35A 800 600 400 200 0 25 50 75 100 125 150 Starting TJ , Junction Temperature( C) tp Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Current Regulator Same Type as D.U.T. Fig 12b. Unclamped Inductive Waveforms 50K QG 12V .2F .3F 12 V QGS QGD + V - DS VGS VG 3mA Charge Fig 13a. Basic Gate Charge Waveform www.irf.com D.U.T. IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 7 IRHN7054 Pre-Irradiation Foot Notes: Repetitive Rating; Pulse width limited by maximum junction temperature. VDD = 25V, starting TJ = 25C, L=0.82mH Peak IL = 35A, VGS =12V ISD 35A, di/dt 150A/s, VDD 60V, TJ 150C Pulse width 300 s; Duty Cycle 2% Total Dose Irradiation with VGS Bias. 12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. Total Dose Irradiation with V DS Bias. 48 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimensions SMD-1 PAD ASSIGNMENTS IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.. Data and specifications subject to change without notice. 07/01 8 www.irf.com