Absolute Maximum RatingsAbsolute Maximum Ratings
Absolute Maximum RatingsAbsolute Maximum Ratings
Absolute Maximum Ratings
ParameterParameter
ParameterParameter
Parameter UnitsUnits
UnitsUnits
Units
ID @ VGS = 12V, TC = 25°C Continuous Drain Current 35
ID @ VGS = 12V, TC = 100°C Continuous Drain Current 30
IDM Pulsed Drain Current ➀283
PD @ TC = 25°C Max. Power Dissipation 150 W
Linear Derating Factor 1.2 W/°C
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy ➁500 mJ
IAR Avalanche Current ➀35 A
EAR Repetitive Avalanche Energy ➀15 mJ
dv/dt Peak Diode Recovery dv/dt ➂3.5 V/ns
TJOperating Junction -55 to 150
TSTG Storage Temperature Range
Package Mounting Surface Temperature 300 (5sec)
Weight 2.6 (Typical ) g
Pre-IrradiationPre-Irradiation
Pre-IrradiationPre-Irradiation
Pre-Irradiation
International Rectifiers RADHard HEXFET®
technol-
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
oC
A
RADIATION HARDENEDRADIATION HARDENED
RADIATION HARDENEDRADIATION HARDENED
RADIATION HARDENED
POWER MOSFETPOWER MOSFET
POWER MOSFETPOWER MOSFET
POWER MOSFET
SS
SS
SURFACE MOUNT (SMD-1)URFACE MOUNT (SMD-1)
URFACE MOUNT (SMD-1)URFACE MOUNT (SMD-1)
URFACE MOUNT (SMD-1)
8/9/01
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Product SummaryProduct Summary
Product SummaryProduct Summary
Product Summary
Part NumberPart Number
Part NumberPart Number
Part Number Radiation Level Radiation Level
Radiation Level Radiation Level
Radiation Level RR
RR
RDS(on)DS(on)
DS(on)DS(on)
DS(on) I I
I I
ID D
D D
D
QPL Part Number QPL Part Number
QPL Part Number QPL Part Number
QPL Part Number
IRHN7054 100K Rads (Si) 0.027Ω 35A JANSR2N7394U
IRHN3054 300K Rads (Si) 0.027Ω 35A JANSF2N7394U
IRHN4054 600K Rads (Si) 0.027Ω 35A JANSG2N7394U
IRHN8054 1000K Rads (Si) 0.027Ω 35A JANSH2N7394U
For footnotes refer to the last page
IRHN7054IRHN7054
IRHN7054IRHN7054
IRHN7054
JANSR2N7394UJANSR2N7394U
JANSR2N7394UJANSR2N7394U
JANSR2N7394U
60V, N-CHANNEL60V, N-CHANNEL
60V, N-CHANNEL60V, N-CHANNEL
60V, N-CHANNEL
REF: MIL-PRF-19500/603REF: MIL-PRF-19500/603
REF: MIL-PRF-19500/603REF: MIL-PRF-19500/603
REF: MIL-PRF-19500/603
RAD HardRAD Hard
RAD HardRAD Hard
RAD Hard
HEXFETHEXFET
HEXFETHEXFET
HEXFET
®
TECHNOLOGYTECHNOLOGY
TECHNOLOGYTECHNOLOGY
TECHNOLOGY
SMD-1SMD-1
SMD-1SMD-1
SMD-1
Features:Features:
Features:Features:
Features:
!Single Event Effect (SEE) Hardened
!Low RDS(on)
!Low Total Gate Charge
!Proton Tolerant
!Simple Drive Requirements
!Ease of Paralleling
!Hermetically Sealed
!Ceramic Package
!Light Weight
!Surface Mount
PD - 90884B
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IRHN7054IRHN7054
IRHN7054IRHN7054
IRHN7054 Pre-IrradiationPre-Irradiation
Pre-IrradiationPre-Irradiation
Pre-Irradiation
Note: Corresponding Spice and Saber models are available on the G&S Website.Note: Corresponding Spice and Saber models are available on the G&S Website.
Note: Corresponding Spice and Saber models are available on the G&S Website.Note: Corresponding Spice and Saber models are available on the G&S Website.
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
Source-Drain Diode Ratings and CharacteristicsSource-Drain Diode Ratings and Characteristics
Source-Drain Diode Ratings and CharacteristicsSource-Drain Diode Ratings and Characteristics
Source-Drain Diode Ratings and Characteristics
ParameterParameter
ParameterParameter
Parameter MinMin
MinMin
Min TypTyp
TypTyp
Typ MaxMax
MaxMax
Max UnitsUnits
UnitsUnits
Units Test ConditionsTest Conditions
Test ConditionsTest Conditions
Test Conditions
ISContinuous Source Current (Body Diode) 35
ISM Pulse Source Current (Body Diode) ➀ 283
VSD Diode Forward Voltage 1.4 V Tj = 25°C, IS = 35A, VGS = 0V ➃
trr Reverse Recovery Time 280 nS Tj = 25°C, IF = 35A, di/dt ≤ 100A/µs
QRR Reverse Recovery Charge 2.2 µC VDD ≤ 50V ➃
ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Thermal ResistanceThermal Resistance
Thermal ResistanceThermal Resistance
Thermal Resistance
ParameterParameter
ParameterParameter
Parameter MinMin
MinMin
Min TypTyp
TypTyp
Typ MaxMax
MaxMax
Max UnitsUnits
UnitsUnits
Units Test ConditionsTest Conditions
Test ConditionsTest Conditions
Test Conditions
RthJC Junction-to-Case 0.83
RthJ-PCB Junction-to-PC board 6.6 °C/W Soldered to a 1 inch square clad PC board
Electrical CharacteristicsElectrical Characteristics
Electrical CharacteristicsElectrical Characteristics
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)@ Tj = 25°C (Unless Otherwise Specified)
@ Tj = 25°C (Unless Otherwise Specified)@ Tj = 25°C (Unless Otherwise Specified)
@ Tj = 25°C (Unless Otherwise Specified)
ParameterParameter
ParameterParameter
Parameter MinMin
MinMin
Min TypTyp
TypTyp
Typ MaxMax
MaxMax
Max UnitsUnits
UnitsUnits
Units Test ConditionsTest Conditions
Test ConditionsTest Conditions
Test Conditions
BVDSS Drain-to-Source Breakdown Voltage 60 V VGS = 0V, ID = 1.0mA
∆BVDSS/∆TJTemperature Coefficient of Breakdown 0.053 V/°C Reference to 25°C, ID = 1.0mA
Voltage
RDS(on) Static Drain-to-Source On-State 0.027 ΩVGS = 12V, ID = 30A
Resistance 0.030 VGS = 12V, ID = 35A
VGS(th) Gate Threshold Voltage 2.0 4.0 V VDS = VGS, ID = 1.0mA
gfs Forward Transconductance 12 S ( )V
DS > 15V, IDS = 30A ➃
IDSS Zero Gate Voltage Drain Current 25 VDS= 48V ,VGS=0V
250 VDS = 48V,
VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Leakage Forward 100 VGS = 20V
IGSS Gate-to-Source Leakage Reverse -100 VGS = -20V
QgTotal Gate Charge 200 VGS =12V, ID = 35A
Qgs Gate-to-Source Charge 60 nC VDS = 30V
Qgd Gate-to-Drain (Miller) Charge 75
td(on) Turn-On Delay Time 27 VDD =30V, ID = 35A
trRise Time 100 VGS =12V, RG = 2.35Ω
td(off) Turn-Off Delay Time 75
tfFall Time 75
LS + LDTotal Inductance 4.0
Ciss Input Capacitance 4100 VGS = 0V, VDS = 25V
Coss Output Capacitance 2000 pF f = 1.0MHz
Crss Reverse Transfer Capacitance 560
nA
Ω
➃
nH
ns
µA
Measured from the center of
drain pad to center of source pad
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Pre-IrradiationPre-Irradiation
Pre-IrradiationPre-Irradiation
Pre-Irradiation IRHN7054IRHN7054
IRHN7054IRHN7054
IRHN7054
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅
ParameterParameter
ParameterParameter
Parameter 100K Rads(Si) 300 - 1000K Rads (Si)
U U
U U
Unitsnits
nitsnits
nits
Test Conditions Test Conditions
Test Conditions Test Conditions
Test Conditions
Min Min
Min Min
Min Max Max
Max Max
Max Min Max Min Max
Min Max Min Max
Min Max
BVDSS Drain-to-Source Breakdown Voltage 60  60 V VGS = 0V, ID = 1.0mA
V/5JD Gate Threshold Voltage 2.0 4.0 1.25 4.5 VGS = VDS, ID = 1.0mA
IGSS Gate-to-Source Leakage Forward 100  100 nA VGS = 20V
IGSS Gate-to-Source Leakage Reverse -100  -100 VGS = -20 V
IDSS Zero Gate Voltage Drain Current 25  50 µA VDS=48V, VGS =0V
RDS(on) Static Drain-to-Source"➃0.027  0.04 Ω VGS = 12V, ID =30A
On-State Resistance (TO-3)
RDS(on) Static Drain-to-Source"➃0.027 0.04 Ω VGS = 12V, ID =30A
On-State Resistance (SMD-1)
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Radiation CharacteristicsRadiation Characteristics
Radiation CharacteristicsRadiation Characteristics
Radiation Characteristics
1. Part numbers IRHN7054 (JANSR2N7394U)
2. Part number IRHN3054, IRHN4054 and IRHN8054 (JANSH2N7394U, JANSF2N7394U, JANSG2N7394U)
Fig a.Fig a.
Fig a.Fig a.
Fig a. Single Event Effect, Safe Operating Area
VSD Diode Forward Voltage"➃  1.4  1.4 V VGS = 0V, IS = 35A
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
For footnotes refer to the last page
Table 2. Single Event Effect Safe Operating AreaTable 2. Single Event Effect Safe Operating Area
Table 2. Single Event Effect Safe Operating AreaTable 2. Single Event Effect Safe Operating Area
Table 2. Single Event Effect Safe Operating Area
IonIon
IonIon
Ion LETLET
LETLET
LET Energy Range Energy Range
Energy Range Energy Range
Energy Range VV
VV
VDS(V)DS(V)
DS(V)DS(V)
DS(V)
MeV/(mg/cm )) (MeV) (µm)
@ @
@ @
@VV
VV
VGSGS
GSGS
GS=0V@=0V@
=0V@=0V@
=0V@VV
VV
VGSGS
GSGS
GS=-5V@=-5V@
=-5V@=-5V@
=-5V@VV
VV
VGSGS
GSGS
GS=-10V@=-10V@
=-10V@=-10V@
=-10V@VV
VV
VGSGS
GSGS
GS=-15V @=-15V @
=-15V @=-15V @
=-15V @VV
VV
VGSGS
GSGS
GS=-20V=-20V
=-20V=-20V
=-20V
I 59.9 345 32.8 60 60 45 40 30
Br 36.8 305 39 40 35 30 25 20
0
20
40
60
80
0 -5 -10 -15 -20
VGS
VDS
BR
I
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IRHN7054IRHN7054
IRHN7054IRHN7054
IRHN7054 Pre-IrradiationPre-Irradiation
Pre-IrradiationPre-Irradiation
Pre-Irradiation
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
10
100
1000
1 10 100
20µs PULSE WIDTH
T = 25 C
J°
TOP
BOTTOM
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
5.0V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
5.0V
10
100
1000
1 10 100
20µs PULSE WIDTH
T = 150 C
J°
TOP
BOTTOM
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
5.0V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
5.0V
10
100
1000
5 6 7 8 9 10 11 12
V = 25V
20µs PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J°
T = 150 C
J°
-60 -40 -20 0 20 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
T , Junction Temperature( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
12V
50A
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Pre-IrradiationPre-Irradiation
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Pre-Irradiation IRHN7054IRHN7054
IRHN7054IRHN7054
IRHN7054
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
1 10 100
0
2000
4000
6000
8000
V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss gs gd , ds
rss gd
oss ds gd
Ciss
Coss
Crss
0 40 80 120 160 200
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
35A
V = 30V
DS
V = 48V
DS
1
10
100
1000
0.4 1.0 1.6 2.2 2.8 3.4 4.0
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J°
T = 150 C
J°
1
10
100
1000
1 10 100 1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Single Pulse
T
T
= 150 C
= 25 C
°
°
J
C
V , Drain-to-Source Voltage (V)
I
,
D
ra
i
n
C
urren
t (A)I
,
D
ra
i
n
C
urren
t (A)
DS
D
100us
1ms
10ms
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IRHN7054IRHN7054
IRHN7054IRHN7054
IRHN7054 Pre-IrradiationPre-Irradiation
Pre-IrradiationPre-Irradiation
Pre-Irradiation
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
+
-
VDD
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
VGS
25 50 75 100 125 150
0
10
20
30
40
50
T , Case Temperature ( C)
I , Drain Current (A)
°
C
D
LIMITED BY PACKAGE
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
J DM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
0.50
SINGLE PULSE
(THERMAL RESPONSE)
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Pre-IrradiationPre-Irradiation
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Pre-Irradiation IRHN7054IRHN7054
IRHN7054IRHN7054
IRHN7054
Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T. V
DS
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
12 V
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
V/5
25 50 75 100 125 150
0
200
400
600
800
1000
1200
Starting T , Junction Temperature( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
ID
TOP
BOTTOM
16A
22A
35A
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IRHN7054 Pre-IrradiationPre-Irradiation
Pre-IrradiationPre-Irradiation
Pre-Irradiation
➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
➄ Total Dose Irradiation with VTotal Dose Irradiation with V
Total Dose Irradiation with VTotal Dose Irradiation with V
Total Dose Irradiation with VGSGS
GSGS
GS Bias. Bias.
Bias. Bias.
Bias.
12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
➅ Total Dose Irradiation with VTotal Dose Irradiation with V
Total Dose Irradiation with VTotal Dose Irradiation with V
Total Dose Irradiation with VDSDS
DSDS
DS Bias. Bias.
Bias. Bias.
Bias.
48 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
➀ Repetitive Rating; Pulse width limited by
maximum junction temperature.
➁ VDD = 25V, starting TJ = 25°C, L=0.82mH
Peak IL = 35A, VGS =12V
➂ ISD ≤ 35A, di/dt ≤ 150A/µs,
VDD ≤ 60V, TJ ≤ 150°C
Foot Notes: Foot Notes:
Foot Notes: Foot Notes:
Foot Notes:
IR WORLD HEADQUARTERS:IR WORLD HEADQUARTERS:
IR WORLD HEADQUARTERS:IR WORLD HEADQUARTERS:
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information..
..
.
Data and specifications subject to change without notice. 07/01
Case Outline and Dimensions SMD-1Case Outline and Dimensions SMD-1
Case Outline and Dimensions SMD-1Case Outline and Dimensions SMD-1
Case Outline and Dimensions SMD-1
PAD ASSIGNMENTS