VS-GP400TD60S
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Revision: 11-Dec-17 1Document Number: 95768
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Dual INT-A-PAK Low Profile “Half Bridge” (Trench PT IGBT), 400 A
Proprietary Vishay IGBT Silicon “L Series”
FEATURES
• Trench PT IGBT technology
•Low V
CE(on)
• Square RBSOA
•HEXFRED
® antiparallel diode with ultrasoft reverse
recovery characteristics
• Industry standard package
•Al
2O3 DBC
• UL approved file E78996
• Designed for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
• Increased operating efficiency
• Performance optimized as output inverter stage for TIG
welding machines
• Direct mounting on heatsink
• Very low junction to case thermal resistance
Note
(1) Maximum continuous collector current must be limited to 500 A to do not exceed the maximum temperature of terminals
PRIMARY CHARACTERISTICS
VCES 600 V
IC DC at TC = 103 °C 400 A
VCE(on) (typical) at 400 A, 25 °C 1.30 V
Speed DC to 1 kHz
Package Dual INT-A-PAK low profile
Circuit configuration Half bridge
Dual INT-A-PAK Low Profile
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Collector to emitter voltage VCES 600 V
Continuous collector current IC (1) TC = 25 °C 758
A
TC = 80 °C 525
Pulsed collector current ICM n/a
Clamped inductive load current ILM n/a
Diode continuous forward current IF
TC = 25 °C 219
TC = 80 °C 145
Gate to emitter voltage VGE ± 20 V
Maximum power dissipation (IGBT) PD
TC = 25 °C 1563 W
TC = 80 °C 875
RMS isolation voltage VISOL Any terminal to case (VRMS t = 1 s, TJ = 25 °C) 3500 V
Operating junction and storage temperature range TJ, TSTG -40 to +150 °C
VS-GP400TD60S
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ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Collector to emitter breakdown voltage VBR(CES) VGE = 0 V, IC = 500 μA 600 - -
V
Collector to emitter voltage VCE(on)
VGE = 15 V, IC = 200 A - 1.13 1.24
VGE = 15 V, IC = 400 A - 1.30 1.52
VGE = 15 V, IC = 200 A, TJ = 125 °C - 1.03 -
VGE = 15 V, IC = 400 A, TJ = 125 °C - 1.26 -
Gate threshold voltage VGE(th)
VCE = VGE, IC = 9.6 mA 4.9 5.9 8.8
VCE = VGE, IC = 9.6 mA, TJ = 125 °C - 3.2 -
Temperature coefficient of threshold
voltage VGE(th)/TV
CE = VGE, IC = 9.6 mA, (25 °C to 125 °C) - -27 - mV/°C
Forward transconductance gfe VCE = 20 V, IC = 50 A - 74 - S
Transfer characteristics VGE VCE = 20 V, IC = 400 A - 10.7 - V
Collector to emitter leakage current ICES
VGE = 0 V, VCE = 600 V - 5 200 μA
VGE = 0 V, VCE = 600 V, TJ = 125 °C - 1.5 - mA
Diode forward voltage drop VFM
IFM = 200 A - 1.42 1.55
V
IFM = 400 A - 1.76 1.98
IFM = 200 A, TJ = 125 °C - 1.43 -
IFM = 400 A, TJ = 125 °C - 1.88 -
Gate to emitter leakage current IGES VGE = ± 20 V - - ± 750 nA
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Turn-on switching energy Eon
IC = 400 A, VCC = 300 V, VGE = 15 V,
Rg = 1.5 , L = 500 μH, TJ = 25 °C
-6.3-
mJTurn-off switching energy Eoff -45-
Total switching energy Etot - 51.3 -
Turn-on delay time td(on) - 633 -
ns
Rise time tr- 254 -
Turn-off delay time td(off) - 715 -
Fall time tf- 490 -
Turn-on switching loss Eon
IC = 400 A, VCC = 300 V, VGE = 15 V,
Rg = 1.5 , L = 500 μH, TJ = 125 °C
-7.2-
mJTurn-off switching loss Eoff -74-
Total switching loss Etot - 81.2 -
Turn-on delay time td(on) - 595 -
ns
Rise time tr- 250 -
Turn-off delay time td(off) - 950 -
Fall time tf- 865 -
Reverse bias safe operating area RBSOA
TJ = 150 °C, IC = n/a, VCC = 300 V
VP = 600 V, Rg = 1.5 VGE = 15 V to 0 V,
L = 500 μH
Fullsquare
Diode reverse recovery time trr IF = 400 A, Rg = 1.5 
VCC = 300 V, TJ = 25 °C
- 123 - ns
Diode peak reverse current Irr - 107 - A
Diode recovery charge Qrr -8.1-μC
Diode reverse recovery time trr IF = 400 A, Rg = 1.5 
VCC = 300 V, TJ = 125 °C
- 167 - ns
Diode peak reverse current Irr - 140 - A
Diode recovery charge Qrr - 14.7 - μC
VS-GP400TD60S
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Fig. 1 - Maximum IGBT Continuous Collector Current vs.
Case Temperature
Fig. 2 - Typical IGBT Output Characteristics, VGE = 15 V
Fig. 3 - Typical IGBT Output Characteristics, TJ = 125 °C
Fig. 4 - Collector to Emitter Voltage vs. Junction Temperature
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL MIN. TYP. MAX. UNITS
Operating junction and storage temperature range TJ, TStg -40 - 150 °C
Junction to case per leg IGBT RthJC
- - 0.08
°C/WDiode - - 0.4
Case to sink per module RthCS -0.05-
Mounting torque case to heatsink: M6 screw 4 - 6 Nm
case to terminal 1, 2, 3: M5 screw 2 - 5
Weight - 270 - g
0
20
40
60
80
100
120
140
160
0 200 400 600 800
Allowable Case Temperature (°C)
IC- Continuous Collector Current (A)
DC
0
100
200
300
400
500
600
700
800
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
IC(A)
VCE (V)
TJ= 125 °C
TJ= 25 °C
TJ= 150 °C
0
100
200
300
400
500
600
700
800
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
IC(A)
VCE (V)
VGE= 12 V
VGE= 15 V
VGE= 18 V
VGE= 9 V
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
20 40 60 80 100 120 140 160
VCE (V)
TJ(°C)
600 A
300 A
400 A
100 A
VS-GP400TD60S
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Fig. 5 - Typical IGBT Transfer Characteristics
Fig. 6 - Typical IGBT Gate Threshold Voltage
Fig. 7 - Typical IGBT Zero Gate Voltage Collector Current
Fig. 8 - Typical Diode Forward Characteristics
Fig. 9 - Maximum Diode Continuous Forward Current vs.
Case Temperature
Fig. 10 - Typical IGBT Energy Loss vs. IC
TJ = 125 °C, VCC = 300 V, Rg = 1.5 , VGE = 15 V, L = 500 μH
0
100
200
300
400
500
600
700
800
4 5 6 7 8 9 10 11 12 13
IC(A)
VGE(V)
TJ= 25 °C
TJ= 125 °C
VGE= 20 V
0
1
2
3
4
5
6
7
8
0246810
VGEth (V)
IC(mA)
TJ= 25 °C
TJ= 125 °C
0.0001
0.001
0.01
0.1
1
10
100200300400500600
ICES(mA)
VCES(V)
TJ= 25 °C
TJ= 125 °C
TJ= 150 °C
0
100
200
300
400
500
600
700
800
0 0.4 0.8 1.2 1.6 2.0 2.4 2.8
IF(A)
VF(V)
TJ= 125 °C
TJ= 25 °C
TJ= 150 °C
0
20
40
60
80
100
120
140
160
0 30 60 90 120 150 180 210 240
Allowable Case Temperature (°C)
IF- Continuous Forward Current (A)
DC
0
10
20
30
40
50
60
70
80
0 100 200 300 400 500
Energy (mJ)
IC(A)
Eoff
Eon
VS-GP400TD60S
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Fig. 11 - Typical IGBT Switching Time vs. IC
TJ = 125 °C, VCC = 300 V, Rg = 1.5 , VGE = 15 V, L = 500 μH
Fig. 12 - Typical IGBT Energy Loss vs. Rg
TJ = 125 °C, VCC = 300 V, IC = 400 A, VGE = 15 V, L = 500 μH
Fig. 13 - Typical IGBT Switching Time vs. Rg
TJ = 125 °C, VCC = 300 V, IC = 400 A, VGE = 15 V, L = 500 μH
Fig. 14 - Typical Diode Reverse Recovery Time vs. dIF/dt
VCC = 300 V, IF = 400 A
Fig. 15 - Typical Diode Reverse Recovery Current vs. dIF/dt
VCC = 300 V, IF = 400 A
Fig. 16 - Typical Diode Reverse Recovery Charge vs. dIF/dt
VCC = 300 V, IF = 400 A
10
100
1000
10000
0 100 200 300 400 500
Switching Time (ns)
IC(A)
tr
td(off)
td(on)
tf
0
20
40
60
80
100
0 5 10 15 20 25 30
Energy (mJ)
Rg(
Ω
)
Eoff
Eon
100
1000
10000
0 5 10 15 20 25 30
Switching Time (ns)
Rg(Ω)
td(off)
tf
td(on)
tr
100
120
140
160
180
200
220
240
260
200 400 600 800 1000 1200 1400 1600 1800
trr (ns)
dIF/dt (A/μs)
TJ= 25 °C
TJ= 125 °C
10
30
50
70
90
110
130
150
170
200 400 600 800 1000 1200 1400 1600 1800
Irr (A)
dIF/dt (A/μs)
TJ= 25 °C
TJ= 125 °C
0
2
4
6
8
10
12
14
16
18
200 400 600 800 1000 1200 1400 1600 1800
Qrr (μC)
dIF/dt (A/μs)
TJ= 25 °C
TJ= 125 °C
VS-GP400TD60S
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Fig. 17 - Maximum Thermal Impedance ZthJC Characteristics - (IGBT)
Fig. 18 - Maximum Thermal Impedance ZthJC Characteristics - (Diode)
0.0001
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
ZthJC - Thermal Impedance
Junction to Case (°C/W)
t1- Rectangular Pulse Duration (s)
0.50
0.20
0.10
0.05
0.02
0.01
DC
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
ZthJC - Thermal Impedance
Junction to Case (°C/W)
t1- Rectangular Pulse Duration (s)
0.50
0.20
0.10
0.05
0.02
0.01
DC
VS-GP400TD60S
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ORDERING INFORMATION TABLE
CIRCUIT CONFIGURATION
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95435
Device code
GVS- P 400 T D
1 532 6
- Insulated gate bipolar transistor (IGBT)
2
- P = trench PT IGBT technology
3
- Current rating (400 = 400 A)
4
- Vishay Semiconductors product
1
60 S
7 84
- Package indicator (D = dual INT-A-PAK low profile)
6
- Voltage rating (60 = 600 V)
7
- Speed / type (S = standard speed IGBT)
8
- Circuit configuration (T = half bridge)
5
4
5
1
6
7
3
2
Outline Dimensions
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Dual INT-A-PAK Low Profile
DIMENSIONS in millimeters
Legal Disclaimer Notice
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Revision: 01-Jan-2021 1Document Number: 91000
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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