RELIABILITY REPORT
FOR
MAX8685AETD+
PLASTIC ENCAPSULATED DEVICES
July 9, 2009
MAXIM INTEGRATED PRODUCTS
120 SAN GABRIEL DR.
SUNNYVALE, CA 94086
MAX8685AETD+
App roved by
Richard Aburano
Quality Assurance
Manager, Reliability Operat ions
Maxim Integrated Products. All rights reserved. Page 1/5
Conclusion
MAX8685AETD+
The MAX8685AETD+ successfully meets the quality and reliability standards required of all Maxim products. In addition, Maxim"s
continuous reliability monitoring program ensures that all outgoing product will continue to meet Maxim"s quality and reliabili ty standards.
Table of Conte n ts
I. ........Device Description V. ........Quality As surance Information
II. ........Manufacturing Information VI. .......Reliability Evaluation
III. .......Packaging Information IV. .......Die Information
.....Attachments
I. Device Description
A. General
The MAX8685 family charges high-voltage photoflash capacitors quickly, while limiting peak drain from the battery, through an efficient flyb ack
switching regulator. The internal n-channel MOSFET improves efficiency over competing bipolar designs by lowering switch-voltage dropout. An
integrated insulated gate bipolar transistor (IGBT) driver enables flash discharge and reduces external component count. The device includes an
open-drain active-low DONE output to indicate when the photoflash voltage has reached regulation. The device automatically refreshes the output
voltage every 16s, thus efficiently maintains the capacitor charge level with minimum battery drain. The MAX8 685A/MAX8685F feature an
undervoltage input (UVI) monitor. UVI monitors the supply voltage and suspends switching if the input voltage drops below a programmed threshold.
The MAX8685A/MAX8685F also feature a voltage-monitor output that provides a scaled replica of the output voltage. The voltage-monitor output is
used for interfacing with a microprocessor's internal A/D converter to assist in implementing red-eye reduction. The MAX8685C/MAX8685D, with fixed
peak-primary current limits of 1A and 1.6A, respectively, are offered in a 2mm x 3mm, 8-pin TDFN package. The MAX8685A/MAX8685F, with
resistor-programmable current limits of up to 2A (max) and 2.6A (max), respectively, are offered in a 3mm x 3mm, 14-pin TDFN package. All devices
operate over the -40°C to +85°C temperature range.
Maxim Integrated Products. All rights reserved. Page 2/5
II. Manufacturing Information
A. Description/Function: Xenon Photoflash Charger with IGBT Driver and Voltage Monitor
B. Process: S4
C. Number of Device Transistors: 6702
D. Fabri cation Location: California, Texas or Japan
E. Assembly Location: Thailand
F. Date of Initial Production: January 19, 2007
III. Packaging Information
A. Package Type: 14-pin TDFN 3x3
B. Lead Frame: Copper
C. Lead Finish: 100% matte Tin
D. Die Attach: Conductive Epoxy
E. Bondwire: Gold (1.3 mil dia.)
F. Mold Material: Epoxy with silica filler
G. Assembly Diagr am: #05-900 0-2637
H. Flammability Rating: Class UL94-V0
MAX8685AETD+
I. Classification of Moisture Sensitivity per
JEDEC standard J-STD-020-C
Level 1
J. Singl e Layer Theta Ja: 54°C/W
K. Single Layer Theta Jc: 8.3°C/W
L. Multi Layer Theta Ja: 41°C/W
M. Multi Layer Theta Jc: 8.3°C/W
IV. Die Information
A. Dimensions: 50 X 58 mils
B. Passivation: Si3N4/SiO2 (Silic on nitride/ Silicon dioxide
C. Interconnect: Al/0.5%Cu
D. Backside Metallization: None
E. Minimum Metal Width: Metal1 = 0.5 / Metal2 = 0.6 / Metal3 = 0.6 microns (as drawn)
F. Minimum Metal Spacing: Metal1 = 0.45 / Metal2 = 0.5 / Metal3 = 0.6 microns (as drawn)
G. Bondpad Dimensions: 5 mil. Sq.
H. Isolation Di electric: SiO2
I. Die Separation Method: Wafer Saw
Maxim Integrated Products. All rights reserved. Page 3/5
V. Quality Assurance Information
A. Quality Assurance Contacts: Ken Wendel (Director, Re liability Engineering)
Bryan Preeshl (Managing Directo r of QA )
B. Outgoing Inspection Level: 0.1% for all electrical parameters guaranteed by the Datasheet.
0.1% For all Visual Defects.
C. Observed Outgoing Defect Rate: < 50 ppm
D. Sampling Plan: Mil-Std-105D
VI. Reliability Evaluation
A. Accelerated Life Test
MAX8685AETD+
The results of the 135°C biased (static) life test are shown in Table 1. Using these results, the Failure Rate ( ) is calculated as
follows:
= 1 = 1.83 (Chi square value for MTTF upper limit)
MTTF 192 x 4340 x 47 x 2
(where 4340 = Temperature Acceleration factor assuming an activation energy of 0.8eV)
= 22.8 x 10-9
= 22.8 F.I.T. (60% confidence level @ 25°C)
The following failure rate represents data collected from Maxim’s reliability monitor program. Maxim performs quarterly 1000
hour life test monitors on its processes. This data is published in the Product Reliability Report found at http://www.maxim-ic.com/.
Current monitor data for the S45 Process results in a FIT Rate of 2.33 @ 25C and 28.16 @ 55C (0.8 eV, 60% UCL)
B. Moisture Resistance Tests
The industry standard 85°C/85%RH or HAST testing is monitored per device process once a quarter.
C. E.S.D. and Latch-Up Testing
The PP88 die type has been found to have all pins able to withstand a HBM transient pulse of +/-2500 V per
JEDEC JESD22-A114-D. Latch-Up testing has shown that this device withstands a current of +/-250 mA.
Maxim Integrated Products. All rights reserved. Page 4/5
Table 1
Reliability Evaluation Test Results
MAX8685AETD+
MAX8685AETD+
TEST ITEM TEST CONDITION FAILURE
IDENTIFICATION
SAMPLE SIZE NUMBER OF
FAILURES
Static Life Test (Note 1)
Ta = 135°C
Biased
Time = 192 hrs.
DC Parameters
& functionality
47 0
Moisture Testing (Note 2)
85/85 Ta = 85°C
RH = 85%
Biased
Time = 1000hrs.
DC Parameters
& functionality
77 0
Mechanical St ress (Note 2)
Temperature
Cycle
-65°C/150°C
1000 Cycles
Method 1010
DC Parameters
& functionality
77 0
Note 1: Life Test Data may represent plastic DIP qualification lots.
Note 2: Generic Package/Process data
Maxim Integrated Products. All rights reserved. Page 5/5
