USER'S MANUAL HIP2103-4DEMO2Z UG017 Rev 0.00 February 20, 2015 Demonstration Board 3-Phase Module with HIP2103, HIP2104 Drivers Description Key Features The HIP2103-4DEMO2Z module is a prototyping tool that uses the HIP2103 and the HIP2104 half bridge drivers to control six on-board MOSFETs configured as a 3-phase bridge. This module is intended to drive a BLDC motor but can be used in any application that requires any combination of 3 independent half bridges. * Small, compact 3-phase bridge module Included in this module is a 12-pin header that interfaces control signals to the customer provided controller. Large diameter holes are also provided to connect this module to the external motor and to the high current voltage source. * 12-pin through-hole header for signal connections to an external controller The PCB layout is optimized and can be used as a guide for custom designs or it can be used as a plug-in module on the customer's controller card. * Optimized PCB layout that can be used as a reference * VBAT (bridge voltage) range 5V to 40VDC * Six high current on-board MOSFETs (60A) * Large diameter holes for wire connections to motor and power source * Clear area on the PCB backside to accommodate an optional heatsink References Specifications * HIP2103, HIP2104 Datasheet Motor Topologies * AN1899, "HIP2103/HIP2104, 3-phase, Full, or Half Bridge Motor Drive User's Guide" 1) 3-phase BLDC motor 2) Our bridge for brushed DC motors (bidirectional) 3) Half bridge for brushed DC motors (unidirectional) Operating Voltage Range 5V to 40VDC Maximum Continuous Bridge Current 60A (with sufficient air flow and/or heatsinking) VCC Output of HIP2104 3.3V 5% at 75mA VDD Output of HIP2104 12V 5% at 75mA * UG016, "HIP2103_4DEMO3Z Demonstration Board User Guide, Full Bridge Module with HIP2103, HIP2104 Drivers" Ordering Information PART NUMBER DESCRIPTION HIP2103-4DEMO2Z HIP2103 and HIP2104 Demonstration Board, (3-phase bridge module) HIP2103_4DEMO2Z +Batt HIP2104 VCen VBAT VDen VCEN SWITCH 5 TO 40V 2 3.3V LI / HI Vcc Vdd 12V LO / HO 2 MA 12V HIP2103 EXTERNAL 12V CIRCUITS LO / HO 2 2 3-PHASE BRIDGE MB LI / HI BLDC MOTOR MC CONTROLLER AND RELATED CIRCUITS HIP2103 2 LO / HO 2 6 LI / HI CURRENT LIMIT AND MONITOR 3 HALL BIAS Intersil 3O Module GA GB GC HALL INPUTS Intersil bridge drivers 2 3 SIR470DP MOSFETS components external to the module FIGURE 1. BLOCK DIAGRAM UG017 Rev 0.00 February 20, 2015 Page 1 of 14 HIP2103-4DEMO2Z Functional Description This module is not a stand alone demonstration for a BLDC motor drive application. Instead, this module allows the user to quickly evaluate a 3-phase bridge application for the HIP2103 and HIP2104 using the customers controller interfaced with this module. For an example of a demonstration board that fully implements an on-board motor controller with the HIP2103 and HIP2104 drivers and bridge MOSFETs, please refer to: AN1899 "HIP2103/HIP2104, 3-phase, Full, or Half Bridge Motor Drive User's Guide" (HIP2103_4DEMO1Z). Included on this module are 6 MOSFETs configured as 3 half bridges. One half bridge is driven by the HIP2104 and the other two by the HIP2103s. Two LI and HI input pairs, two inputs per half bridge, are intended to be driven by an external controller of the users choice. Also, VCen and VDen enable inputs are available to control the VDD and VCC regulator outputs of the HIP2104. All boot capacitors and other necessary external parts are included in the module allowing the user to quickly apply this module to his motor drive applications with little or no changes to the module components or values. Figure 1 illustrates one common implementation of the 3-phase bridge module to drive a BLDC motor. The external controller is the customers choice. The external current monitor and limit circuits can be implemented to control the motor torque and/or to limit the maximum currents. The on-board LDOs of the HIP2104 (12VDD and 3.3VCC) can optionally be used to bias external circuits. The simplified schematic in Figure 2, illustrated the major functions of the 3-phase bridge module. Two HIP2103s and one HIP2104 half bridge drivers interface with the six 3-phase bridge MOSFETs. The MA, MB and MC outputs of the 3-phase bridge MOSFETs are the power connections to the motor. GA, GB and GC are the power ground connections of each half bridge section (the low-side bridge MOSFET sources). UG017 Rev 0.00 February 20, 2015 VCen VBAT VDen HB VCC HS B HO VDD HI LO LI VSS SIGNAL INTERFACE TO AN EXERNAL CONTROLLER HIP2104 12 pin header This user guide covers the design details of a 3-phase bridge power module with a focus on the design implementation of the HIP2103 and HIP2104 drivers and the SIR470DP bridge MOSFETs. VDD HI LI HB HS MA MB MC A HO LO VSS HIP2103 VDD HI LI HB HS C HO LO VSS HIP2103 GC GB GA FIGURE 2. SIMPLIFIED 3-PHASE BRIDGE SCHEMATIC Input Signals All inputs to the HIP2103, HIP2104 drivers are compatible with 5V or 3.3V controllers. The VDen and VCen inputs (enables for VDD and VCC) are tolerant of voltages up to VBAT. All other inputs (LI and HI) are tolerant of voltages up to VDD. Figure 1 shows six outputs from the external controller providing LI and HI inputs to the HIP2103s and HIP2104. Two inputs, VCen from the controller and VDen from an external switch, control the VCC and VDD LDOs of the HIP2104. Optionally, both VDen and VCen can be connected to the external switch or both can be connected to the external controller. LDOS of the HIP2104 The HIP2104 (red) provides the 3.3VCC bias for the controller and the 12VDD bias for itself and for the two HIP2103s (blue and green). The VCC and VDD outputs can also be used for circuits external to the module. The total rated current of the VCC output, 75mA at 3.3V, is available for external circuits. The maximum available VDD current is also 75mA but is reduced by the average current for the HIP2103, HIP2104 drivers. For a typical BLDC motor drive, for every 60 rotation, one half bridge is switching at the PWM frequency, a second half bridge is not switching but the low MOSFET is constantly on and the outputs of the third bridge are both off. Consequently, the calculation for the average gate drive for a BLDC motor driver is the current of only one half bridge. Page 2 of 14 HIP2103-4DEMO2Z The internal VDD bias current of the drivers themselves are not significant when compared to the average gate drive current. 10 VGS - Gate-to-Source Voltage (V) ID = 20 A VDS = 20 V MOSFET Circuits 8 Series connected gate resistors on each bridge MOSFET are used to reduce the switching speed to help minimize EMI radiating from the power leads to the motor and to attenuate voltage transients on the PCB from parasitic inductance. The diodes in parallel with the MOSFET gate resistors are used to provide rapid turn off of the MOSFETs. The customer may change the resistor values, change the bridge MOSFETs or even remove the diodes to suit the customer's application needs. VDS = 10 V 6 VDS = 30 V 4 2 0 0 21 42 63 84 105 Qg - Total Gate Charge (nC) Gate Charge FIGURE 3. GATE CHARGE FOR THE SIR470DP BRIDGE MOSFETs Figure 3 is used to determine the gate charge of the bridge MOSFETs. VDD from the HIP2104 is nominally 12V. Extrapolating for 12 VGS and VDS = 30V, then QC = 120nC. Because two MOSFETs are being driven, the average current is doubled. Assuming PWM switching freq = 20kHz then: I gateavg = 2Q c freq = 4.8mA The available VDD current for external load, as calculated for this example is then ~70mA. The available current will be higher or lower primarily dependent on the PWM frequency used. Other applications may have higher total average gate drive current depending on the motor drive topology used, potentially two times higher. Vishay 60A, 40V MOSFETs, are used to minimize power dissipation. With sustained total motor currents of 60A, a heatsink with an insulator can be attached to the backside of the module, if necessary. Dead Time The HIP2103, HIP2104 drivers do not have internal dead-time features and must be provided by the external controller. A dead time of 200ns is sufficient for the original component values on the board. Changing the gate resistors or the bridge MOSFETs may require adjustments to the dead time. Sleep Mode The sleep mode current (a.k.a. quiescent current) of the HIP2103, HIP2104 is invoked by setting both the LI and HI inputs to each driver high simultaneously. See Figure 4 for details to enable and disable the sleep mode. Note that SLEEP is an internal state of the driver, not an I/O. Please refer to the HIP2103, HIP2104 datasheet for complete details. SLEEP MODE AND NORMAL SWITCHING DEAD TIME PROVIDED BY CONTROLLER Hi-Z HO HO 100 to LS LO LO SLEEP SLEEP HI HI LI LI // 20s // 20s FIGURE 4. SLEEP MODE TIMING DIAGRAMS UG017 Rev 0.00 February 20, 2015 Page 3 of 14 HIP2103-4DEMO2Z Operating Range Although the maximum bridge voltage for the HIP2103 and the HIP2104 is 50V, the maximum operating voltage of the 3-phase bridge module is limited to 40VDC as established by the six SIR470DP bridge MOSFETs. Because the rDS(ON) (2.3m) of these MOSFETs is very low and because most motor driver applications switch at relatively low frequencies, it is probable that no external heatsinking will be required for most applications. If necessary, a heatsink with an insulator can be installed on the PCB side opposite the bridge MOSFETs because no components are located in this area. PCB Layout Guidelines The AC performance of the HIP2103, HIP2104 depends significantly on the design of the PC board. This module is intended to be used as a prototyping tool. Its main purpose is to drive a BLDC motor but can be used in other applications where half bridge MOSFETS are driven by the HIP2103, HIP2104: * Avoid having a signal ground plane under a high amplitude dv/dt circuit. The parasitic capacitance of a ground plane, Cp, relative to the high amplitude dv/dt circuit will result in injected (Cp x dv/dt) currents into the signal ground paths. * Do power dissipation and voltage drop calculations of the power traces. Many PCB/CAD programs have built-in tools for calculation of trace resistance. The internet is also a good source for resistance calculators for PCB trace resistance. * Large power components (Power MOSFETs, Electrolytic caps, power resistors, etc.) have internal parasitic inductance, which cannot be eliminated. This must be accounted for in the PCB layout and circuit design. * If you simulate your circuits, consider including parasitic components especially parasitic inductance. EPAD Heatsinking Considerations * Understand where the switching power currents flow. The high amplitude di/dt currents of the driven power MOSFET will induce significant voltage transients on the associated traces. The EPAD of the HIP2103, HIP2104 is electrically connected to VSS through the IC substrate. The epad has two main functions: to provide a quiet signal ground and to provide heatsinking for the IC. The EPAD must be connected to a ground plane and switching currents from the driven MOSFETs should not pass through the ground plane under the IC. * Keep power loops as short as possible by paralleling the source and return traces. Figure 5 is a PCB layout example of how to use vias to remove heat from the IC through the EPAD. * Use planes where practical; they are usually more effective than parallel traces. For maximum heatsinking, it is recommended that a ground plane, connected to the EPAD, be added to both sides of the PCB. A via array, within the area of the EPAD, will conduct heat from the EPAD to the GND plane on the bottom layer. The number of vias and the size of the GND planes required for adequate heatsinking is determined by the power dissipated by the HIP2103, HIP2104, the air flow and the maximum temperature of the air around the IC. * Place the driver as close as possible to the driven power MOSFET. * Avoid paralleling high amplitude di/dt traces with low level signal lines. High di/dt will induce currents and consequently, noise voltages in the low level signal lines. * When practical, minimize impedances in low level signal circuits. Noise, magnetically induced on a 10k resistor, is 10x larger than the noise on a 1k resistor. * Be aware of magnetic fields emanating from motors and inductors. Gaps in the magnetic cores of these structures are especially bad for emitting flux. * If you must have traces close to magnetic devices, align the traces so that they are parallel to the flux lines to minimize coupling. * The use of low inductance components such as SMT resistors and SMT capacitors is highly recommended. * Use decoupling capacitors to reduce the influence of parasitic inductance in the VBAT, VDD and GND leads. To be effective, these capacitors must also have the shortest possible conduction paths. If vias are used, connect several paralleled vias to reduce the inductance of the vias. * It may be necessary to add resistance to dampen resonating parasitic circuits especially on LO and HO. If an external gate resistor is unacceptable, then the layout must be improved to minimize lead inductance. * Keep high dv/dt nodes away from low level circuits. Guard banding can be used to shunt away dv/dt injected currents from sensitive circuits. UG017 Rev 0.00 February 20, 2015 Note that a separate plane is added under the high-side drive circuits and is connected to HS. In a manner similar to the ground plane, the HS plane provides the lowest possible parasitic inductance for the HO/HS gate drive current loop. See the PCB layout illustrations at the end of this user guide for examples of how these guidelines for PCB layout and EPAD heatsinking are applied to the HIP2103-4DEMO2Z 3-phase bridge module. VDD EPAD GND PLANE EPAD GND PLANE HB VDD HI HO HI HO LI HS LI HS LO LS LS COMPONENT LAYER HB This plane is connected to HS and is under all high side driver circuits LO BOTTOM LAYER FIGURE 5. TYPICAL PCB PATTERN FOR THERMAL VIAS Page 4 of 14 HIP2103-4DEMO2Z Quick Start The HIP2103-4DEMO2Z board is 1.05x1.55 inches (26.67x 39.37mm). The only through-hole component is a 12-pin header with 0.1 inch centers. This header is the signal interface between the module and the external controller. The power lead connections between the battery and the motor are 0.076 inch plated through holes large enough for 14 AWG wire. A clear area of 0.75x1.55 inches on the non-component side of the PCB is available to mount a heatsink directly on the PCB (with insulator) should additional cooling be required. especially if the dead-time duration is not sufficient to prevent shoot-through. It is also good practice to use a regulated lab supply with adjustable current limit to help prevent damage during initial testing of the customers application. Configuration Test For the following test, the logic signals can be from any suitable source such as the user's microcontroller or DSP or even a logic signal generator. It is also possible to test the 3-phase module standalone, removed from the user's circuit. To confirm the configuration of the HIP2103-4DEMO2Z in the user's custom circuit, disconnect any loads on MA, MB and MC then apply the following voltages and signals: * +BATT = 12...40V (as required by your circuit) * LI = HI = logic 0 * VCen = VDen = logic 1 Measure 3.3VDC on J1-4 (VCC) and 12VDC on J1-7 (VDD). Now apply the LI and HI signals of Figure 8 to each half bridge driver either simultaneously or one at a time. The period of these signals can also be adjusted as required by the user's circuit. It is important to observed the 20s start-up sequence as shown to ensure that the sleep mode is cleared. 20s MINIMUM TO CLEAR SLEEP MODE FIGURE 6. HIP2103-4DEMO2Z TOP VIEW 200ns DEAD TIME LI HI 40s (25kHz) FIGURE 8. TEST SIGNALS (TIME IS NOT TO SCALE) Figure 9 is the scope plot of the Phase A waveforms with +BATT = 20V switching at 25kHz. Similar waveforms will be observed on the other phases. FIGURE 7. HIP2103-4DEMO2Z BOTTOM VIEW Ensure that prior to start-up, that the motor leads are connected to MA, MB and MC and that the positive lead of the power source is connected to +BATT. The negative lead of the power source is connected to the users main board on the low side of the current sensing resistor(s). If no current sensing circuit is implemented (not wise), then GA, GB and GC must be connected to the negative output of the power source. There are no start-up sequence limitations for using this board. The HIP2103, HIP2104 have built-in methods to prevent start-up problems that could be associated with random start-up of the bias voltages. However, if +BATT voltage is not present, the LDO outputs cannot be active. 10V/DIV 5V/DIV 5V/DIV 10s/DIV FIGURE 9. INPUT AND OUTPUT WAVEFORMS It is good practice when first starting the operation of this board, to use a fan to prevent damage during prototype testing UG017 Rev 0.00 February 20, 2015 Page 5 of 14 HIP2103-4DEMO2Z If the MA, MB, or MC outputs are not switching when the corresponding the LI and HI inputs are active, the most likely explanation is that the drive is in sleep mode. Please refer to Figure 4 for the correct sequence to turn off or turn on the sleep mode. PCB Design Files Layer 2, Layer 3 and the Bottom layer are identical. Layers 2 and 3 are provided to minimize conduction losses and to improve the thermal transfer of heat from the bridge MOSFETs to the bottom layer (on which a heatsink can be attached). If this PCB layout is used as a reference for a custom PCB, it is possible that layers two and three layers can be deleted for applications with lower sustained maximum current or with significant air flow. The following pages contain the complete schematic and PCB layout images. The native Cadence/Orcad design files are also available for downloading from the Intersil website. Bill of materials MANUFACTURER PART QTY UNITS HIP2103-4DEMO2ZREVBPCB 1 EA GRM188R61C105KA12D 7 EA C1206X7R101-105KNE 1 68000-236HLF REFERENCE DESIGNATOR DESCRIPTION MANUFACTURER PWB-PCB, HIP2103-4DEMO2Z, REVB, RoHS IMAGINEERING INC C1-C7 CAP, SMD, 0603, 1F, 16V, 10%, X5R, RoHS MURATA EA C8 CAP, SMD, 1206, 1F, 100V, 10%, X7R, RoHS VENKEL 1 EA J1 CONN-HEADER, 1x12, BRKAWY 1x36, 2.54mm, RoHS BERG/FCI 1N4148WS-7-F 6 EA D1-D6 DIODE-RECTIFIER, SMD, SOD-323, 2P, 75V, 150mA, RoHS DIODES INC. HIP2103FRTAAZ 2 EA U2, U3 IC-60V HALF BRIDGE DRIVER, 8P, TDNF, RoHS INTERSIL HIP2104FRAANZ 1 EA U1 IC-60V HALF BRIDGE DRIVER, 12P, TDFN, RoHS INTERSIL SIR470DP-T1-GE3 6 EA Q1-Q6 TRANSIST-MOS, N-CHANNEL, 8P, PWRPAK, 40V, 60A, RoHS VISHAY CR0603-10W-36R0FT 6 EA R3-R8 RES, SMD, 0603, 36, 1/10W, 1%, TF, RoHS VENKEL CR0603-10W-1000FT 2 EA R1, R2 RES, SMD, 0603, 100, 1/10W, 1%, TF, RoHS VENKEL UG017 Rev 0.00 February 20, 2015 Page 6 of 14 - +,3)5$$1= 9'' 8 +% +, +2 /, +6 /6 /2 & 8) 6,5$'37*( 5 6,5$'37*( 0% 0% 4 6,5$'37*( (3 966 ' *% *% +,3)57$$= 8) & 9'' 8 +% +, +2 /, +6 /6 /2 & ' 8) 5 ' Page 7 of 14 FIGURE 10. THREE-PHASE FET MODULE 6,5$'37*( 5 4 (3 966 +,3)57$$= *$ 4 5 *$ ' 4 ' (3 966 8) & 0$ 5 0$ 0& /6 /2 /, +, 6,5$'37*( 0& +6 4 4 6,5$'37*( 8) 9&& $+, $+, $/, $/, 9'' 9'' %+, %+, %/, %/, &+, &+, &/, &/, *1' *1' & 9'(1 9'(1 9&& 9'' 8) 9&(1 9&(1 & *1' +2 5 8) 9&& %$7 +% ' & 9&(1 9%$7 9%$7 5 8 9'(1 8) & 5 *& *& HIP2103-4DEMO2Z UG017 Rev 0.00 February 20, 2015 Schematic HIP2103-4DEMO2Z GA U1 R3 Q2 R4 C5 Q1 D2 C8 C2 D3 R5 C1 C3 Pb C6 Q4 GB U2 R6 D4 Q3 MB D1 R1 J1 MA BAT R2 Board Layout D5 R7 C7 Q6 GC U3 R8 D6 Q5 MC C4 FIGURE 11. SILKSCREEN, LAYER 1 (WITH PADS) UG017 Rev 0.00 February 20, 2015 Page 8 of 14 HIP2103-4DEMO2Z Board Layout (Continued) FIGURE 12. PCB, LAYER 1, COMPONENT SIDE UG017 Rev 0.00 February 20, 2015 Page 9 of 14 HIP2103-4DEMO2Z Board Layout (Continued) FIGURE 13. PCB, LAYER 2 UG017 Rev 0.00 February 20, 2015 Page 10 of 14 HIP2103-4DEMO2Z Board Layout (Continued) FIGURE 14. PCB, LAYER 3 UG017 Rev 0.00 February 20, 2015 Page 11 of 14 HIP2103-4DEMO2Z Board Layout (Continued) FIGURE 15. PCB, BOTTOM LAYER UG017 Rev 0.00 February 20, 2015 Page 12 of 14 HIP2103-4DEMO2Z Board Layout (Continued) J1 OPTIONAL HEATSINK AREA CALL 1-888-INTERSIL HIP2103_4DEMO2Z REV B FIGURE 16. PCB, BOTTOM SILKSCREEN UG017 Rev 0.00 February 20, 2015 Page 13 of 14 Notice 1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation or any other use of the circuits, software, and information in the design of your product or system. Renesas Electronics disclaims any and all liability for any losses and damages incurred by you or third parties arising from the use of these circuits, software, or information. 2. Renesas Electronics hereby expressly disclaims any warranties against and liability for infringement or any other claims involving patents, copyrights, or other intellectual property rights of third parties, by or arising from the use of Renesas Electronics products or technical information described in this document, including but not limited to, the product data, drawings, charts, programs, algorithms, and application examples. 3. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or others. 4. You shall not alter, modify, copy, or reverse engineer any Renesas Electronics product, whether in whole or in part. Renesas Electronics disclaims any and all liability for any losses or damages incurred by 5. Renesas Electronics products are classified according to the following two quality grades: "Standard" and "High Quality". The intended applications for each Renesas Electronics product depends on the you or third parties arising from such alteration, modification, copying or reverse engineering. product's quality grade, as indicated below. "Standard": Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; industrial robots; etc. "High Quality": Transportation equipment (automobiles, trains, ships, etc.); traffic control (traffic lights); large-scale communication equipment; key financial terminal systems; safety control equipment; etc. Unless expressly designated as a high reliability product or a product for harsh environments in a Renesas Electronics data sheet or other Renesas Electronics document, Renesas Electronics products are not intended or authorized for use in products or systems that may pose a direct threat to human life or bodily injury (artificial life support devices or systems; surgical implantations; etc.), or may cause serious property damage (space system; undersea repeaters; nuclear power control systems; aircraft control systems; key plant systems; military equipment; etc.). Renesas Electronics disclaims any and all liability for any damages or losses incurred by you or any third parties arising from the use of any Renesas Electronics product that is inconsistent with any Renesas Electronics data sheet, user's manual or other Renesas Electronics document. 6. When using Renesas Electronics products, refer to the latest product information (data sheets, user's manuals, application notes, "General Notes for Handling and Using Semiconductor Devices" in the reliability handbook, etc.), and ensure that usage conditions are within the ranges specified by Renesas Electronics with respect to maximum ratings, operating power supply voltage range, heat dissipation characteristics, installation, etc. Renesas Electronics disclaims any and all liability for any malfunctions, failure or accident arising out of the use of Renesas Electronics products outside of such specified ranges. 7. Although Renesas Electronics endeavors to improve the quality and reliability of Renesas Electronics products, semiconductor products have specific characteristics, such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Unless designated as a high reliability product or a product for harsh environments in a Renesas Electronics data sheet or other Renesas Electronics document, Renesas Electronics products are not subject to radiation resistance design. You are responsible for implementing safety measures to guard against the possibility of bodily injury, injury or damage caused by fire, and/or danger to the public in the event of a failure or malfunction of Renesas Electronics products, such as safety design for hardware and software, including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult and impractical, you are responsible for evaluating the safety of the final products or systems manufactured by you. 8. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. You are responsible for carefully and sufficiently investigating applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive, and using Renesas Electronics products in compliance with all these applicable laws and regulations. Renesas Electronics disclaims any and all liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. 9. Renesas Electronics products and technologies shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign laws or regulations. You shall comply with any applicable export control laws and regulations promulgated and administered by the governments of any countries asserting jurisdiction over the parties or transactions. 10. It is the responsibility of the buyer or distributor of Renesas Electronics products, or any other party who distributes, disposes of, or otherwise sells or transfers the product to a third party, to notify such third party in advance of the contents and conditions set forth in this document. 11. This document shall not be reprinted, reproduced or duplicated in any form, in whole or in part, without prior written consent of Renesas Electronics. 12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products. (Note 1) "Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its directly or indirectly controlled subsidiaries. (Note 2) "Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics. (Rev.4.0-1 November 2017) http://www.renesas.com SALES OFFICES Refer to "http://www.renesas.com/" for the latest and detailed information. Renesas Electronics America Inc. 1001 Murphy Ranch Road, Milpitas, CA 95035, U.S.A. Tel: +1-408-432-8888, Fax: +1-408-434-5351 Renesas Electronics Canada Limited 9251 Yonge Street, Suite 8309 Richmond Hill, Ontario Canada L4C 9T3 Tel: +1-905-237-2004 Renesas Electronics Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K Tel: +44-1628-651-700, Fax: +44-1628-651-804 Renesas Electronics Europe GmbH Arcadiastrasse 10, 40472 Dusseldorf, Germany Tel: +49-211-6503-0, Fax: +49-211-6503-1327 Renesas Electronics (China) Co., Ltd. Room 1709 Quantum Plaza, No.27 ZhichunLu, Haidian District, Beijing, 100191 P. R. China Tel: +86-10-8235-1155, Fax: +86-10-8235-7679 Renesas Electronics (Shanghai) Co., Ltd. Unit 301, Tower A, Central Towers, 555 Langao Road, Putuo District, Shanghai, 200333 P. R. China Tel: +86-21-2226-0888, Fax: +86-21-2226-0999 Renesas Electronics Hong Kong Limited Unit 1601-1611, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong Tel: +852-2265-6688, Fax: +852 2886-9022 Renesas Electronics Taiwan Co., Ltd. 13F, No. 363, Fu Shing North Road, Taipei 10543, Taiwan Tel: +886-2-8175-9600, Fax: +886 2-8175-9670 Renesas Electronics Singapore Pte. Ltd. 80 Bendemeer Road, Unit #06-02 Hyflux Innovation Centre, Singapore 339949 Tel: +65-6213-0200, Fax: +65-6213-0300 Renesas Electronics Malaysia Sdn.Bhd. Unit 1207, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: +60-3-7955-9390, Fax: +60-3-7955-9510 Renesas Electronics India Pvt. Ltd. No.777C, 100 Feet Road, HAL 2nd Stage, Indiranagar, Bangalore 560 038, India Tel: +91-80-67208700, Fax: +91-80-67208777 Renesas Electronics Korea Co., Ltd. 17F, KAMCO Yangjae Tower, 262, Gangnam-daero, Gangnam-gu, Seoul, 06265 Korea Tel: +82-2-558-3737, Fax: +82-2-558-5338 (c) 2018 Renesas Electronics Corporation. All rights reserved. Colophon 7.0