AMI Semiconductor 3
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4.0 Electrical Specifications
Parameter Symbol Min Max Units
Supply Voltage (VSS = ground) VDD VSS-0.5 7 V
Input Voltage, DC VIVSS-0.5 VDD+0.5 V
Output Voltage, DC VOVSS-0.5 VDD+0.5 V
Input Clamp Current, DC (VI< 0 or VI> VDD) IIK -50 50 mA
Output Clamp Current, DC (VI< 0 or VI> VDD) IOK -50 50 mA
Storage Temperature Range (non-condensing) TS-65 150 °C
Ambient Temperature Range, Under Bias TA-55 125 °C
Junction Temperature TJ125 °C
Reflow Solder Profile per IPC/JEDEC
J-STD-020B
Input Static Discharge Voltage Protection (MIL-STD 883E, Method 3015.7) 2 kV
Table 3: Absolute Maximum Ratings
Parameter Symbol Conditions/Descriptions Min Typ. Max Units
Supply Voltage VDD 3.3V ± 10% 3.0 3.3 3.6 V
Ambient Operating Temperature Range TA0 70 °C
Crystal Resonator Frequency fXTAL Fundamental Mode 12 13.5 18 MHz
Table 4: Operating Conditions
Parameter Symbol Conditions/Descriptions Min Typ. Max Units
Overall
Supply Current, Dynamic, With Loaded Outputs IDD fXTAL = 13.5MHz; CL= 10pF, VDD = 3.6V 30 mA
Supply Current, Static IDD XIN = 0V, VDD = 3.6V 3 mA
Voltage-Controlled Crystal Oscillator (contact factory for approved crystal sources or other application assistance)
Crystal Loading Capacitance at Center Order crystal for this capacitance (parallel
Tuning Voltage CL(xtal) load) at desired center frequency 14 pF
Crystal Resonator Motional Capacitance C1Specified motional capacitance of the
crystal will affect pullability (see text) 25 fF
XTUNE Effective Range 0 3 V
Synthesized Load Capacitance Min. CL1 @V(XTUNE)=minimum value 10 pF
Synthesized Load Capacitance Max. CL2 @V(XTUNE)=maximum value 20 pF
VCXO Tuning Range fXTAL = 13.5MHz; CL(xtal) = 14pF; 300 ppm
C1(xtal) = 25fF (peak-to-peak)
VCXO Tuning Characteristic Note: positive change of XTUNE = 150 ppm/V
positive change of VCXO frequency
Crystal Drive Level RXTAL=20Ω; CL= 20pF 200 µW
Clock Output (CLK)
High-Level Output Source Current * IOH VO= 2.0V -40 mA
Low-Level Output Sink Current * IOL VO= 0.4V 17 mA
Output Impedance * zOH VO= 0.1VDD; output driving high 25 Ω
zOL VO= 0.1VDD; output driving low 25
Short Circuit Source Current * IOSH VO= 0V; shorted for 30s, max -55 mA
Short Circuit Sink Current * IOSL VO= 3.3V; shorted for 30s, max 55 mA
Table 5: DC Electrical Specifications
FS6128-04/FS6128-04g PLL Clock Generator IC With VCXO
Data Sheet
Note: Stresses above those listed under Absolute Maximum
Ratings may cause permanent damage to the device. These
conditions represent a stress rating only and functional
operation of the device at these or any other conditions
above the operational limits noted in this specification is not
implied. Exposure to maximum rating conditions for extended
conditions may affect device performance, functionality and
reliability.
CAUTION: ELECTROSTATIC SENSITIVE DEVICE
Permanent damage resulting in a loss of functionality or
performance may occur if this device is subjected to a high-
energy electrostatic discharge.
Note: Unless otherwise stated VDD = 3.3V ±10% no load on any
output and ambient temperature range TA= 0°C to 70°C. Parameters
denoted with an asterisk (*) represent nominal characterization data
and are not production tested to any specific limits. Where given,
MIN and MAX characterization data are ±3σfrom typical. Negative
currents indicate current flows out of the device.