creat by art
Low profile package
Built-in strain relief
Glass passivated junction
Excellent clamping capability
Typical IR less than 1uA above 10V
XXX = Specific Device Code
G = Green Compound
Y = Year
M = Work Month
Maximum Ratings and Electrical Characteristics
Rating at 25 ℃ ambient temperature unless otherwise specified.
Symbol Unit
PPK Watts
TJ, TSTG ℃
Packaging: 12mm tape per EIA Std RS-481
For surface mounted application in order to optimize
board space
Fast response time: Typically less than 1.0ps from
0 volt to BV min
High temperature soldering guaranteed:
260℃ / 10 seconds at terminals
Plastic material used carried Underwriters
Laboratory Flammability Classification 94V-0
Features
Polarity: Indicated by cathode band
Mechanical Data
Terminals: Pure tin plated, lead free
Case: Molded plastic
400 watts peak pulse power capability with a 10 /
1000 us waveform
Green compound with suffix "G" on packing
code & prefix "G" on datecode
Weight: 0.064 gram
Type Number
Operating and Storage Temperature Range
Peak Power Dissipation at TA=25℃, Tp=1ms(Note 1)
Version:B12
3.5 Volts
400
Value
P4SMA HV SERIES
400 Watts Suface Mount Transient Voltage Suppressor
Marking Diagram
SMA/DO-214AC
Dimensions in inches and (millimeters)
-55 to +150
Peak Forward Surge Current, 8.3ms Single Half
Sine-wave Superimposed on Rated Load
(JEDEC method)(Note 2) IFSM
Note 1: Non-repetitive Current Pulse Per Fig. 3 and Derated above TA=25℃ Per Fig. 2
Note 2: Mounted on 5 x 5mm Copper Pads to Each Terminal
40 Amps
Maximum Instantaneous Forward Voltage at 25.0A for
Unidirectional Only VF
Pb
RoHS
COMPLIANCE
RoHS
COMPLIANCE
Version:B12
RATINGS AND CHARACTERISTIC CURVES (P4SMA HV SERIES)
FIG.2 PULSE DERATING CURVE
0
25
50
75
100
125
0 25 50 75 100 125 150 175 200
TA, AMBIENT TEMPERATURE (oC)
PEAK PULSE POWER(PPP) OR CURRENT (IPP) A
DERATING IN PERCENTAGE (%)
FIG. 4 MAXIMUM NON-REPETITIVE FORWARD SURGE
CURRENT UNIDIRECTIONAL ONLY
0
10
20
30
40
50
1 10 100
NUMBER OF CYCLES AT 60 Hz
IFSM, PEAK FORWARD SURGE A
CURRENT (A)
8.3mS Single Half Sine Wave
JEDEC Method
FIG. 3 CLAMPING POWER PULSE WAVEFORM
0
20
40
60
80
100
120
140
0 0.5 1 1.5 2 2.5 3 3.5 4
t, TIME ms
PEAK PULSE CURRENT (%)
td
Peak Value
IPPM
tr=10usec
Half Value-IPPM/2
10/1000usec, WAVEFORM
as DEFINED by R.E.A.
PULSE WIDTH(td) is DEFINED
as the POINT WHERE the PEAK
CURRENT DECAYS to 50% OF IPPM
FIG. 5 TYPICAL JUNCTION CAPACITANCE
10
100
1000
10000
100000
1 10 100
V(BR), BREAKDOWN VOLTAGE (V)
CJ, JUNCTIO N CAPACITANCE (pF) A
TA=25℃
f=1.0MHz
Vsig=50mVp-p
VR=0
MEASURED at
STAND-OFF
VOLTAGE,Vwm
FIG. 1 PEAK PULSE POWER RATING CURVE
0.1
1
10
100
0.1 1 10 100 1000 10000
tp, PULSE WIDTH, (uS)
PPPM, PEAK PULSE POWER, KW
NON-REPETITIVE
PULSE WAVEFORM
SHOWN in FIG.3
TA = 25℃
Test Stand-Off Maximum Maximum Maximum Maximum
Current Voltage Reverse Leakage Peak Pulse Clamping Voltag
e
Temperature
IT VWM @ VWM Current IPPM @ IPPM Coefficient
Min Max (mA) (V) ID (uA) (A) (Note 2) Vc(V) of VBR(%/℃)
P4SMA220A SEJ 209 231 1 185 1 1.3 328 0.108
P4SMA250A SGJ 237 263 1 214 1 1.2 344 0.108
P4SMA300A SKJ 285 315 1 256 1 1.0 414 0.108
P4SMA350A SMJ 332 368 1 300 1 0.9 482 0.108
P4SMA400A SPJ 380 420 1 342 1 0.8 548 0.108
Notes:
1. VBR measure after IT applied for 300us, IT=square wave pulse or equivalent.
2. Surge current waveform per Figure. 3 and derate per Figure. 2.
3. All terms and symbols are consistent with ANSI/IEEE C62.35.
Version:B12
ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)
Device Device
Marking
Code
Breakdown Voltage
VBR (V)
(Note 1)
