DATA SH EET
Product data sheet
Supersedes data of 1999 Apr 27
2004 Jan 16
DISCRETE SEMICONDUCTORS
PMBT2907; PMBT2907A
PNP switching transistors
db
ook, halfpage
M3D088
2004 Jan 16 2
NXP Semiconductors Product data sheet
PNP switching transistors PMBT2907;
PMBT2907A
FEATURES
•High current (max. 600 mA)
•Low voltage (max. 60 V).
APPLICATIONS
•Switching and linear amplification.
DESCRIPTION
PNP switching transistor in a SOT23 plastic package.
NPN complements: PMBT2222 and PMBT2222A.
MARKING
Note
1. * = p : Made in Hong Kong .
* = t : Made in Malaysia.
* = W: Made in China.
PINNING
TYPE NUMBER MARKING CODE(1)
PMBT2907 *2B
PMBT2907A *2F
PIN DESCRIPTION
1base
2emitter
3collector
Fig.1 Simplified outline (SOT23 ) and symbo l .
handbook, halfpage
21
3
MAM256
Top view
2
3
1
ORDERING INFORMATION
TYPE
NUMBER PACKAGE
NAME DESCRIPTION VERSION
PMBT2907 −plastic surface mounted package; 3 leads SOT23
PMBT2907A −plastic surface mounted package; 3 leads SOT23
2004 Jan 16 3
NXP Semiconductors Pr oduct data shee t
PNP switching transistors PMBT2907; PMBT2907A
LIMITING VALUES
In accordance with th e Absolute Maximum Ratin g S ystem (IEC 60134).
THERMAL CHARACTE RISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base volta ge open emitter − −60 V
VCEO collector-emitter voltage open base
PMBT2907 − −40 V
PMBT2907A − −60 V
VEBO emitter-base voltage open collector − −5 V
ICcollector current (DC) − −600 mA
ICM peak collector current − −800 mA
IBM peak base current − −200 mA
Ptot total power dissipation Tamb ≤ 25 °C−250 mW
Tstg storage temperature −65 +150 °C
Tjjunction temperature −150 °C
Tamb operating ambient temperature −65 +150 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth(j-a) thermal resistance from junction to ambient note 1 500 K/W
2004 Jan 16 4
NXP Semiconductors Pr oduct data shee t
PNP switching transistors PMBT2907; PMBT2907A
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
ICBO collector-base cut-off current IE = 0; VCB = −50 V
PMBT2907 − −20 nA
PMBT2907A − −10 nA
collector-base cut-off current IE = 0; VCB = −50 V; Tj = 125 °C
PMBT2907 − −20 µA
PMBT2907A − −10 µA
IEBO emitter-base cu t-off current IC = 0; VEB = −5 V − −50 nA
hFE DC current gain IC = −0.1 mA; VCE = −10 V
PMBT2907 35 −
PMBT2907A 75 −
DC current gain IC = −1 mA; VCE = −10 V
PMBT2907 50 −
PMBT2907A 100 −
DC current gain IC = −10 mA; VCE = −10 V
PMBT2907 75 −
PMBT2907A 100 −
DC current gain IC = −150 mA; VCE = −10 V 100 300
DC current gain IC = −500 mA; VCE = −10 V
PMBT2907 30 −
PMBT2907A 50 −
VCEsat collector-emitter saturation
voltage IC = −150 mA; IB = −15 mA − −400 mV
IC = −500 mA; IB = −50 mA − −1.6 V
VBEsat base-emitt er saturation voltage IC = −150 mA; IB = −15 mA − −1.3 V
IC = −500 mA; IB = −50 mA − −2.6 V
Cccollector capacitance IE = Ie = 0; VCB = −10 V; f = 1 MHz −8pF
Ceemitter cap a citance IC = Ic = 0; VEB = −2 V; f = 1 MHz −30 pF
fTtransition freque ncy IC = −50 mA; VCE = −20 V; f = 100 MHz 200 −MHz
Switching times (between 10% and 90% levels); (see Fig.2)
ton turn-on time ICon = −150 mA; IBon = −15 mA;
IBoff = 15 mA −40 ns
tddelay time −12 ns
trrise time −30 ns
toff turn-off time −365 ns
tsstorage time −300 ns
tffall time −65 ns
2004 Jan 16 5
NXP Semiconductors Pr oduct data shee t
PNP switching transistors PMBT2907; PMBT2907A
Vi = −9.5 V; T = 500 µs; tp = 10 µs; tr = tf ≤ 3 ns.
R1 = 68 Ω; R2 = 325 Ω; RB = 325 Ω; RC = 160 Ω.
VBB = 3.5 V; VCC = −29.5 V.
Oscilloscope: input impedance Zi = 50 Ω.
Fig.2 Test circuit for switching times.
handbook, full pagewidth
RC
R2
R1
DUT
MGD624
Vo
RB(probe)
450 Ω
(probe)
450 Ω
oscilloscope oscilloscope
V
BB
Vi
V
CC
2004 Jan 16 6
NXP Semiconductors Pr oduct data shee t
PNP switching transistors PMBT2907; PMBT2907A
PACKAGE OUTLINE
UNIT A
1
max. b
p
cDE e
1
H
E
L
p
Qwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
04-11-04
06-03-16
IEC JEDEC JEITA
mm 0.1 0.48
0.38 0.15
0.09 3.0
2.8 1.4
1.2 0.95
e
1.9 2.5
2.1 0.55
0.45 0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23 TO-236AB
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
w
M
v
M
A
B
AB
0 1 2 mm
scale
A
1.1
0.9
c
X
12
3
Plastic surface-mounted package; 3 leads SOT2
3
2004 Jan 16 7
NXP Semiconductors Pr oduct data shee t
PNP switching transistors PMBT2907; PMBT2907A
DATA SHEET STATUS
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product s ta tus of device(s ) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Inter net at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for pro duct
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production T his document contains the product specification.
DISCLAIMERS
General ⎯ Information in this document is believed to be
accurate and reliable . H ow ev er, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequenc es of use of such information.
Right to make changes ⎯ NXP Semiconductors
reserves the right to make changes to information
published in this doc ument, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
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not designed, au thorized or warranted to be suitable for
use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in pe rs onal injury, death or seve re
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefor e s uc h inclusion and/or use is at
the customer’s own risk .
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use witho ut fu rth e r testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
Terms and conditions of sale ⎯ NXP Semiconductors
products are sold subject to the general terms and
conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
otherwise agreed to in writing by NXP Semiconductors. In
case of any incons istency or conflict betw een information
in this document an d such terms and conditio ns, the latter
will prevail.
No offer to sell or license ⎯ Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for accept ance or the grant, c onveyance or
implication of any license under any copyrights, patents or
other industr i al or inte llectual property righ ts.
Export control ⎯ This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national author ities.
Quick refer ence data ⎯ The Quick reference data is an
extract of th e product data given in the Limiting values an d
Characteristics sections of this docu ment, and as such is
not complete, exhaus tive or legally binding.
NXP Semiconductors
Contact information
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© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information pr e sent ed in this document does not form p ar t o f an y q uot ation or co ntract, is believed to b e a ccur ate and reliable an d may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimer s. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Printed in The Netherlands R75/05/pp8 Date of releas e : 2004 Jan 16 Document order number: 9397 750 12459
