IX Y & CORP L&E D Mz 4b4beeb OO00LO7? 3 mm KIX Ys IXTP4N80, IXTP4N90, IXTM4N80, IXTM4N90 T-39~(% 4 AMPS, 800-900 V, 2.49/3.02 MAXIMUM RATINGS > IXTP4N80 IXTP4N90 Parameter Sym. IXTM4N80 IXTM4N90 Unit Drain-Source Voltage (1) Voss 800 900 Vue Drain-Gate Voltage (Reg =1.0 MQ) (1) Vosr 800 900 Voo Gate-Source Voltage Continuous Vas +20 Vue Gate-Source Voltage Transient Vesm +30 Vv Drain Current Continuous (T, =25C) lb 4 Nac Drain Current Pulsed (3) lo 16 A Total Power Dissipation. Pp 125 Ww Power Dissipation Derating >25C 1.0 Wied Operating and Storage Temperature Ty & Tag -65 to +150 C Max. Lead Temp. for Soldering Ty 300 (1.6mm from case for 10 sec.) C ELECTRICAL CHARACTERISTICS T, =25C unless otherwise specified Parameter Type Min. | Typ. | Max. | Units Test Conditions BVpsg_-: Drain-Source Breakdown Voltage 4N80, 80A 800 - - Vv Veg =0V 4N90, 90A 900 - - Vv lp =250pnA Vesan __ Gate Threshold Voltage ALL 2.0 ~ 45 Vv Vos =Ves: Ip =250pA lass Gate-Source Leakage Forward ALL - - 100 nA | Vgg=20V loss Gate-Source Leakage Reverse ALL - - 100 nA | Vgg=-20V logs Zero Gate Voltage Drain Current - - 200 HA | Vos =Max. Ratingx0.8, V,, =0V ALL - - 1000 HA | Vog=Max. Ratingx0.8, Veg =OV, T, = 125C Roston Static Drain-Source On-State 4N80A, 90A - - 24 Q Resistance (2) 4N80, 90 = | a0 | Q | Vas=10V.lo=2.0A Gia Forward Transconductance (2) ALL 40 5.0 - Ss Vog215V, |, =2.0A Ci... Input Capacitance ALL - 1500 | 1800 PF | Vas =0V, Vos =25V, f=1.0 MHz Coss Output Capacitance ALL - 110 165 pF Cus Reverse Transfer Capacitance ALL - 35 70 pF baron Turn-On Delay Time ALL - 20 40 NS | Vos =0.5 BVogg, Ip =2.0A, Z, =102 t, Rise Time ALL - 30 60 ns oo ; F tgay__Ten-OF Delay Tine ALL [=| 7_| 100 | ns_| (MOSPET switching mes are essentially t, Fall Time ALL - 35 60 ns See Fig. 3, page 22 for test circuit.) Q, Total Gate Charge ALL - - 80 nc gsc 10M. lp =4.0A, Vp, =0.8 Max. Rating. [- Gy, Gate Source Charge ALL | =| = [16 [nc] (ate charge is exsontialy Independent of | Qa Gate-Drain (Miller) Charge ALL - - 20 nc for test circuit.) Wosr Unclamped Drain-to-Source 4N80R, 80AR _ _ . 4 Avalanche Energy 4N90R, OOAR 250 mJ See Fig. 5, page 22 for test circuit. THERMAL RESISTANCE Rinse Junction-to-Case ALL - - 10 | C/W Baa Junction-to-Ambient TO-204 IXTM - - 30.0 | C/W | Free Air Operation | Riva Junction-to-Ambient TO-220 IXTP - - 80.0 | C/W | Free Air Operation SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS ls (ody Dioday ne Current ALL - | - | 40 | A | Modified MOSFET symbot t Pulse Source Current showing the integral ifi 6 SM (Body Diode) (i) ALL - - 16.0 A reverse P-N junction rectifier. s Vsp Diode Forward Voltage (2) ALL - - 15 Vv Te =28C, |, =4.0A, Veg =0V te Reverse Recovery Time ALL - 800 - ns |,=4.0A, difdt=100A/ps (1) T;=25C to 150C (2) Pulse test: Pulse width <300us, duty cycle <2% (8) Repetitive rating: Pulse width limited by max. junction temperature. IXYS Corporation 2355 Zanker Road, San Jose, California 95131-1109 (408) 435-1900 7