Intemational rer] Rectifier PD-9.1008 IRF720S HEXFET Power MOSFET Surface Moun Available in Tape & Real Dynamic dv/dt Rating Repetitive Avalanche Rated @ Fast Switching @ Ease of Parail Simple Drive Requirements Description Third Generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and The SMD-2260 is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surlace mount package. The SMD-220 is Suitable for high current applications because of its low internal connection resistance and can dissipate up ta 2.0W ina typical surface mount application. t eling Vogs = 400V Rpgion) = 1.80 cost-effectiveness. SMD-220 | Parameter Max. ; Units Ip @ Tc =25C | Continuous Drain Current, Ves @ 10 V 3.3 'o @ Tce = 100C _| Continuous Drain Current, Vas @ 10 V 2.1 A lom Pulsed Drain Current 13 Pp @ Tc = 25C | Power Dissipation ___ 50 Ww Pp @ Ta=25C_| Power Dissipation (PCB Mount)"* 3.1 ; Linear Derating Factor 0.40 __| wee _ Linear Derating Factor (PCB Mount)** 0.025 Ves * ___, Gate-to-Source Voltage _ +20 V Eas Single Pulse Avalanche Energy @ 190 ml lan Avalanche Currant 3.9 A Ean Repatitive Avalanche Energy 5.0 mJ dvidt Peak Diode Recovery dvidt 4.0 vins | Ty, Tsta Junction and Storage Temperature Range -55 to +150 nd 9g Soldering Temperature, for 10 sacands 300 (1.6mm from case) Thermal Resistance Parameter Min. | Typ. Max. Units _| Rac Junction-to-Case ~~ - | 25 5 j Pua Junction-to-Ambient (PCB mount)** yo 40 OM Flua Junction-to-Ambient [= se | | * When mounted 0 n 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994.IRF720S TOR Electrical Characteristics @ Ty= 25C (unless otherwise specified) / Parameter Min. | Typ. | Max. | Units Test Conditions Viempss Drain-to-Source Breakdown Voltage 400 | _ Vs | Veg=0V, Ip= 250A AV enyoss/ATy| Breakdown Voltage Temp. Coetticient | 0.51 | | VAC | Reference to 25C, Ip= mA Rbston) Static Drain-to-Source On-Resistance _ | 18 Q | Vas=10V, ip=2.0A Vestn Gate Threshold Voltage 2.0 | | 40 | V_ | Vps=Ves, lp= 250nA Os Forward Transconductance 7?}-f- S | Vos=50V, In=2.0A . _ _ 25 Vos=400V, Vas=0V loss Drain-to-Source Leakage Current TT Tes0 pA Vos-320V, Ves=0V, Tx125C lass | Gate-to-Source Forward Leakage _ | 400 nA Ves=20V _ : Gate-to-Source Reverse Leakage _ | | -100 Vos=-20V Qy Total Gate Charge | | 20 Ip=3.3A Qgs Gate-to-Source Charge } | 33 | WC | Vps=320V Qog Gate-to-Drain {(Miller") Charge { {4 Vas=10V See Fig. 6 and 13 @ ton) Turn-On Delay Time {wf Vpn=200V t - Rise Time |i(-'|., Ip=3.3A trom Turn-Oif Delay Time - | | - Re=18Q tr Fall Time a 13 _ Rn=56Q2 See Figure10@ | Lo Internal Drain inductance | 45, eam seas } :) nH | from package { Ls Internal Source Inductance i 75 | and center of ; die contact s Ciss _| Input Capacitance ~ | 410 | Vas=0V Coss Output Capacitance _ | 120 | | PF | Vos=25v Crs Reverse Transfer Capacitance _ 47 -- fe1.0MHz SeeFigureS | Source-Drain Ratings and Characteristics _ Parameter Min. | Typ. | Max. | Units Test Conditions Is Continuous Source Current _ | 14s MOSFET symbol a (Body Diode) : A showing the lon "| Pulsed Source Current ~ | | 4 integral reverse (Body Diode) p-n junction diode. s Vsp Diode Forward Voltage -_ |; 1.6 Vos | Ty25C, Ige3.3A, Vas-0V @ tr Reverse Recovery Time | a | 270 | 600 | ons | T25C, Ip=3.9 On Reverse Recovery Charge | 14] 30 uC | di/dt=100Ajis ton Forward Tum-On Time intrinsic turn-on time is negleghble {tum-on is dominated by Ls+Lo) Notes: Repetitive rating; pulse width limited by @ Isns3.3A, di/dt<65A/ns, Voo<Vierjoss, max. junction temperature (See Figure 11) Tusi50C @ Vnn=50V, starting Ty=25C, L=30mH @ Pulse width < 300 us; duly cycle <2%. Ag=250, las=3.3A (See Figure 12){p, Drain Current (Amps) ip, Drain Current (Amps) e oO a 20us PULSE WIDTH Te = 250C 10-2 107 10 Vos, Drain-to-Source Voltage (volts) Fig 7. Typical Output Characteristics, To=25C roi. 350C Vos = SOV 20us PULSE WIDTH 6 ? 1% Ves, Gate-to-Source Voltage (volts) Fig 3. Typical Transfer Characteristics Roson), Drain-to-Source On Resistance Ig, Drain Current (Amps) (Normalized) IRF720S to! 109 ro! - 20us PULSE WIDTH . To = t800r we 1c Vps, Drain-to-Source Voltage (volts) Fig 2. Typical Output Characteristics, Tc=150C 35 3. 2.5 2.6 1.8 1.0 el vGe = 10 0.9 -60 -40 -26 20 20 40 6G 30 100 120 140 160 Ty, Junction Tamperature (C) Fig 4. Normalized On-Resistance Vs. TemperatureIRF720S TGR. 1063 > MHz 2 ge + fgg. Cag SHOR z Cgc 6 BoD Cys + z 6 Qa ~ oa z $ a 8 g : : 3 a 8 3 & oO a 200 0 4 a oO > E 6 See FIGJFE 13 8 10 0 10 Vps, Drain-to-Source Voltage {voits) Qg, Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 402 sot 5 OPERATION IN THIS ARES LIMITED oS BY Qs (oN) a 2 = g 10 s Zz 5 = o 5 ? 5 1 a 6 Oo; c 3 Ss ; a $ A Ud a ~ 8 a T a 2 7 )=1800C Vgg = Ov ; SINGLE wi 4972 O48 . 2 oi? 4 2 5 49 2 408 2 8 408 Vp, Source-to-Drain Voltage (valts) Vos, Drain-to-Source Voltage (volts) Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area Forward VoltageIp, Drain Current (Amps) IRF720S Vos I D.U.T. } 4 > .Vop fiov Pulse Width < 15 Duty Factor < 0.1% rt 25 50 75 Ww 125 156 vos aay WH Tc, Case Temperature (C) don) taion) 4 Fig 9. Maximum Drain Current Vs. Fig 10b. Switching Time Waveforms Case Temperature 20 Thermal Response (Zgi0) 10 SINGLE PULSE (THERMAL RESPONSE) LS rel NOTES: 1. DUTY FACTOR, D=tt/t2 2. PEAK Ty"Pom x Ztnyo + Te 4105 104 10 1 ome i 10 ty, Rectangular Pulse Duration (seconds) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-CaseIRF720S Vary tp to obtain Vos required las Fig 12a. Unclamped Inductive Test Circuit VipRypss Yos nVvi e- OG8 + Qeo VG Charge + Fig 13a. Basic Gate Charge Waveform Eas, Single Pulse Energy (mJ) 25 Ip Top 1.58 2.1 BOTTOM 3.34 50 73 100 125 150 Starting Ty, Junction Temperature(C) Fig 12c. Maximum Avalanche Energy i-- Vs. Drain Current Current Regulat lg * Ip Currant Sampting Resistors Fig 13b. Gate Charge Test Circuit Appendix A: Figure 14, Peak Diode Recovery dv/dt Test Circuit Appendix B: Package Outline Mechanical Drawing Appendix C: Part Marking Information Appendix D: Tape & Reel InformationIRF720S Appendix A Peak Diode Recovery dv/dt Test Circuit Fig 14. For N-Channel HEXFETs Driver Gate Drive De aot - Period D.UT, t+ Clrewit Layout Considerations Pw en KR + Low Stray Inductance : "Tt x Ground Plane pe Vgg = 10V" i a + Low Leakage Inductance u . Currant Transtormer qT p< @ D.U.T. Ign Waveform %, : ney ia Reverse i) Recovery \; le Forward \/ @ - aa oD Y @ D.UT. Vos Wavelort piss Recever . Lom ll | oe NN rf Oriver ys F Vv, g 4) velo | ody base orward Drop + didi controlled by Fg * Driver same type as 0.U.T. ~ Vop @ Indugior Curent + tgp controled by Duty Factor 0 . ~~ ar * 0.U.T.- Device Under Test (| Roos 8% co Iso . : od * Vgg = 5W lor Lagic Level Devices Appendix B Package Outline SMD-220 Outline Dimensions are shown in millimeters (inches) 17.76 700) 10.54 ( 445) a -8 10.28 (408) 368 (186) a 168 L168 ( : 40.088 x) 4.20 (165) 1.32 1.052) 19-16 (499) 1 Lal LP 1.22 1.088) oe ' Fr 4 6.47 (.258) 1 ! a3 1 6 18( 243) 1.78 ( 070} 18.49 (.610) | _ 2.804 110) i }.4 1.24 (.050) L i 14.73 (580) TE 2.28 (.090) r . T 6.28 (.208) U 4.78 (168) 261 C103) yo 2.92 (.091) tte (085) i 1.39 (066) Kawa (04S) 9.93 1.097) 0 55 (.022) V.14 (046) 4.69 (350) 0.60 (027) 0.46 {.018) REF 5.08 (.200) $B] 0: 25 (010 (050) MINIMUM RECOMMENDED FOOTPRINT 14.49 (480) NOTES. a ' r T 1 DIMENSIONS AFTER SOLDER MIP ot Z UIMENSIONING & TOLERANCING PER ANSI 14 5M, 1982 8.80 (950) 4 3 CONTROLLING CIMENSION: INCH L l ! 4 HEATSINK & LEAD DIMENSIONS DO NGI INCLUDE BUARS. LEAD ASSIONMENTS = =f) FY | 1- GATE 2- DRAIN | Hi ~ 254 (100) 3. SOURCE 2.08 (9?)IRF720S TOR) Part Marking Information Appendix C SMO-220 EXAMPLE: THIS IS AN IARFS530S WITH INTERNATIONAL PART NUMBER ASSEMBLY LOT CODE 9BIM RECTIFIER a F530S Loco NY TOR 9226) 3M DATE CODE | ASSEMBLY a fre) LOT CODE YY= YEAR WW = WEEK Tape & Reel information Appendix D 1.60 (.083) 1.80 (059) 1.80 1.063} 10018) 4 7501-058) 0.368 (0148) , 3:90 6953) I 0 342 (0335) { , oo" cozy omecton SBELZS) J 1180 (487) | Or Tan GS 11.40 {. 449) STON 785 C085} 15.42 (000) 24.30 S87) y 1822 C801} { TRL ooo0oo9 j . g Lzaioam +- . 125 (049) 10.90 {.429) | - 4.72 (.186) Tove L4aty Wee 178) | a 16.70 (034) 452 (178) an 75.90 ( 626) FEED DIRECTION er ALL DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES) 19.50 ( $32) Nv @ i200 1508) a = 28.40.11 099) i 24 40 (.961) SMD-220 Tape & Reel When ordering, indicate the part number, part orfentation, and the quantity. Guantities are in multiples of B00 pieces per ree! ON, moe0 gi e0.00 for both TRL and TRA. + (14.175) | 4p (2.382) MAX ( \ | MIN Printed on Sere recycled offset: . e made fram 50% recycled waste paper, including 10% de-nked, post-consumer waste 6 WORLD HEADQUARTERS: 253 Kaneas Si.. El Segundo, Caltornig 90245, Tal (310) 322-3331. Tax 4720403 EUROPEAN HEADQUARTERS, Hurn Green, Ovted, Surrey RH8 968 England. Tel: (0883) 12218, Twx: 95219 fA CANADA: 101 Bondey St, Markham, Ontario LIA 311, Tel: (416) 475-1897, IR GERMANY: Seaibucgst-asss 157. 0-6390 Bad omburg, Tol: 6172-37066. IR ITALY: Via Liguria 49 1007+ Borgaro, Toring, Tel: (011) 470 1484. 18 FAR EAST KAH Bulldmg. 30-6 Nehikebukuro FChoma, fashima-ku, Fokyo 171 Japan. Tei: (03) $89 0647. [A SOUTHEAST ASIA: 180 Middle Flond, HEX 10-01 Fortune Centre, Singapore o716, Tel: (65) 336 3022 Sates Offices, Agents and Distributors in Major Cities Throughout the World. Das and speChORNON suDlect to change without outice (*k2) Printedin U.S.A. 294 Sm