To learn more about ON Semiconductor, please visit our website at
www.onsemi.com
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor
product management systems do not have the ability to manage part nomenclature that utilizes an underscore
(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain
device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated
device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please
email any questions regarding the system integration to Fairchild_questions@onsemi.com.
Is Now Part of
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, afliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor
is an Equal Opportunity/Afrmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
FOD3120 — High Noise Immunity, 2.5 A Output Current, Gate Drive Optocoupler
©2003 Fairchild Semiconductor Corporation www.fairchildsemi.com
FOD3120 Rev. 1.4
February 2016
FOD3120
High Noise Immunity, 2.5 A Output Current,
Gate Drive Optocoupler
Features
High Noise Immunity Characterized by 35 kV/μs
Minimum Common Mode Rejection
2.5 A Peak Output Current Driving Capability for Most
1200 V/20 A IGBT
Use of P-channel MOSFETs at Output Stage Enables
Output Voltage Swing Close to The Supply Rail
Wide Supply Voltage Range from 15 V to 30 V
Fast Switching Speed
– 400 ns max. Propagation Delay
– 100 ns max. Pulse Width Distortion
Under Voltage LockOut (UVLO) with Hysteresis
Extended Industrial Temperate Range,
-40°C to 100°C Temperature Range
Safety and Regulatory Approved
– UL1577, 5000 VRMS for 1 min.
– DIN EN/IEC60747-5-5
•R
DS(ON) of 1 Ω (typ.) Offers Lower Power Dissipation
>8.0 mm Clearance and Creepage Distance
(Option ‘T’ or ‘TS’)
1,414 V Peak Working Insulation Voltage (VIORM)
Applications
Industrial Inverter
Uninterruptible Power Supply
Induction Heating
Isolated IGBT/Power MOSFET Gate Drive
Description
The FOD3120 is a 2.5 A Output Current Gate Drive
Optocoupler, capable of driving most medium power
IGBT/MOSFET. It is ideally suited for fast switching
driving of power IGBT and MOSFETs used in motor
control inverter applications, and high performance
power system.
It utilizes Fairchild’s coplanar packaging technology,
Optoplanar®, and optimized IC design to achieve high
noise immunity, characterized by high common mode
rejection.
It consists of a gallium aluminum arsenide (AlGaAs) light
emitting diode optically coupled to an integrated circuit
with a high-speed driver for push-pull MOSFET output
stage.
Related Resources
FOD3150, 1 A Output Current, Gate Drive
Optocoupler Datasheet
www.fairchildsemi.com/products/optoelectronics/
Functional Block Diagram Package Outlines
8
8
1
8
1
1
8
1
1
2
3
4
8
7
6
5
NC
ANODE
CATHODE
NC
VDD
VO2
VO1
VSS
Note:
1. 0.1 μF bypass capacitor must be connected between pins 5 and 8.
Figure 1. Functional Block Diagram(1) Figure 2. Package Outlines
©2003 Fairchild Semiconductor Corporation www.fairchildsemi.com
FOD3120 Rev. 1.4 2
FOD3120 — High Noise Immunity, 2.5 A Output Current, Gate Drive Optocoupler
Truth Table
Pin Definitions
LED VDD –VSS
“Positive Going”
(Turn-on) VDD –VSS “Ne gative Going”
(Turn-off) VO
Off 0 V to 30 V0 V to 30 V Low
On 0 V to 11.5 V0 V to 10 V Low
On 11.5 V to 13.5 V10 V to 12 V Transition
On 13.5 V to 30 V12 V to 30 VHigh
Pin # Name Description
1 NC Not Connected
2 Anode LED Anode
3 Cathode LED Cathode
4 NC Not Connected
5V
SS Negative Supply Voltage
6V
O2 Output Voltage 2 (internally connected to VO1)
7V
O1 Output Voltage 1
8V
DD Positive Supply Voltage
©2003 Fairchild Semiconductor Corporation www.fairchildsemi.com
FOD3120 Rev. 1.4 3
FOD3120 — High Noise Immunity, 2.5 A Output Current, Gate Drive Optocoupler
Safety and Insulation Ratings
As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit
data. Compliance with the safety ratings shall be ensured by means of protective circuits.
Note:
2. Safety limit value - maximum values allowed in the event of a failure.
Parameter Characteristics
Installation Classifications per DIN VDE
0110/1.89 Table 1, For Rated Mains Voltage
< 150 VRMS I–IV
< 300 VRMS I–IV
< 450 VRMS I–III
< 600 VRMS I–III
< 1000 VRMS (Option T, TS) I–III
Climatic Classification 40/100/21
Pollution Degree (DIN VDE 0110/1.89) 2
Comparative Tracking Index 175
Symbol Parameter Value Unit
VPR
Input-to-Output Test Voltage, Method A, VIORM x 1.6 = VPR,
Type and Sample Test with tm = 10 s, Partial Discharge < 5 pC 2,262 Vpeak
Input-to-Output Test Voltage, Method B, VIORM x 1.875 = VPR,
100% Production Test with tm = 1 s, Partial Discharge < 5 pC 2,651 Vpeak
VIORM Maximum Working Insulation Voltage 1,414 Vpeak
VIOTM Highest Allowable Over-Voltage 6,000 Vpeak
External Creepage 8.0 mm
External Clearance 7.4 mm
External Clearance (for Option T or TS, 0.4" Lead Spacing) 10.16 mm
DTI Distance Through Insulation (Insulation Thickness) 0.5 mm
TSCase Temperature(2) 175 °C
IS,INPUT Input Current(2) 400 mA
PS,OUTPUT Output Power (Duty Factor 2.7%)(2) 700 mW
RIO Insulation Resistance at TS, VIO = 500 V(2) > 109Ω
©2003 Fairchild Semiconductor Corporation www.fairchildsemi.com
FOD3120 Rev. 1.4 4
FOD3120 — High Noise Immunity, 2.5 A Output Current, Gate Drive Optocoupler
Absolute Maximum Ratings (TA = 25ºC unless otherwise specified)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Notes:
3. Pulse Width, PW 1 μs, 300 pps
4. Exponential Waveform, IO(PEAK) | 2.5 A | ( 0.3 μs)
5. Maximum pulse width = 10 μs, maximum duty cycle = 1.1%
6. Derate linearly above 87°C, free air temperature at a rate of 0.77 mW/°C
7. No derating required across temperature range.
8. Functional operation under these conditions is not implied. Permanent damage may occur if the device is sub-
jected to conditions outside these ratings.
Recommended Operating Conditions
The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended
operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not
recommend exceeding them or designing to absolute maximum ratings.
Symbol Parameter Value Unit
TSTG Storage Temperature -55 to +125 ºC
TOPR Operating Temperature -40 to +100 ºC
TJJunction Temperature -40 to +125 ºC
TSOL
Lead Wave Solder Temperature
(refer to page 21 for reflow solder profile) 260 for 10sec ºC
IF(AVG) Average Input Current 25 mA
IF(PEAK) Peak Transient Forward Current(3) 1A
f Operating Frequency(4) 50 kHz
VRReverse Input Voltage 5 V
IO(PEAK) Peak Output Current(5) 3.0 A
VDD – VSS Supply Voltage 0 to 35 V
TA 90°C 0 to 30
VO(PEAK) Peak Output Voltage 0 to VDD V
tR(IN), tF(IN) Input Signal Rise and Fall Time 500 ns
PDIInput Power Dissipation(6)(8) 45 mW
PDOOutput Power Dissipation(7)(8) 250 mW
Symbol Parameter Value Unit
TAAmbient Operating Temperature -40 to +100 °C
VDD – VSS Power Supply 15 to 30 V
IF(ON) Input Current (ON) 7 to 16 mA
VF(OFF) Input Voltage (OFF) 0 to 0.8 V
©2003 Fairchild Semiconductor Corporation www.fairchildsemi.com
FOD3120 Rev. 1.4 5
FOD3120 — High Noise Immunity, 2.5 A Output Current, Gate Drive Optocoupler
Isolation Characteristics
Apply over all recommended conditions, typical value is measured at TA = 25ºC
Notes:
9. Device is considered a two terminal device: Pins 2 and 3 are shorted together and Pins 5, 6, 7 and 8 are shorted
together.
10. 5,000 VRMS for 1 minute duration is equivalent to 6,000 VACRMS for 1 second duration.
Electrical Characteristics
Apply over all recommended conditions, typical value is measured at VDD = 30 V, VSS = Ground, TA = 25°C
unless otherwise specified.
Symbol Parameter Conditions Min. Typ. Max. Unit
VISO Input-Output Isolation
Voltage
TA = 25ºC, R.H.< 50%, t = 1.0min,
II-O 10 μA, 50 Hz(9)(10)
5,000 VRMS
RISO Isolation Resistance VI-O = 500 V(9) 1011 Ω
CISO Isolation Capacitance VI-O = 0 V, Freq = 1.0 MHz(9) 1pF
Symbol Parameter Conditions Min. Typ. Max. Unit
VFInput Forward Voltage IF = 10 mA 1.2 1.5 1.8 V
Δ(VF/ TA)Temperature Coefficient
of Forward Voltage -1.8 mV/ºC
BVR
Input Reverse Breakdown
Voltage IR = 10 μA5 V
CIN Input Capacitance f = 1 MHz, VF = 0V 60 pF
IOH
High Level Output
Current(4)
VO = VDD – 3 V -1.0 -2.0 -2.5 A
VO = VDD – 6 V -2.0 -2.5
IOL
Low Level Output
Current(4)
VO = VSS + 3 V 1.0 2.0 2.5 A
VO = VSS + 6 V 2.0 2.5
VOH High Level Output Voltage IF = 10 mA, IO = -2.5 A VDD – 6.25 V VDD – 2.5 V V
IF = 10 mA, IO = -100 mA VDD – 0.25 V VDD – 0.1 V
VOL Low Level Output Voltage IF = 0 mA, IO = 2.5 A VSS + 2.5 V VSS + 6.25 V V
IF = 0 mA, IO = 100 mA VSS + 0.1 V VSS + 0.25 V
IDDH High Level Supply Current VO = Open,
IF = 7 to 16 mA 2.8 3.8 mA
IDDL Low Level Supply Current VO = Open,
VF = 0 to 0.8 V 2.8 3.8 mA
IFLH
Threshold Input Current
Low to High IO = 0 mA, VO > 5 V 2.3 5.0 mA
VFHL
Threshold Input Voltage
High to Low IO = 0 mA, VO < 5 V 0.8 V
VUVLO+ Under Voltage Lockout
Threshold
IF = 10 mA, VO > 5 V 11.5 12.7 13.5 V
VUVLO– IF = 10 mA, VO < 5 V 10.0 11.2 12.0 V
UVLOHYS
Under Voltage Lockout
Threshold Hysteresis 1.5 V
©2003 Fairchild Semiconductor Corporation www.fairchildsemi.com
FOD3120 Rev. 1.4 6
FOD3120 — High Noise Immunity, 2.5 A Output Current, Gate Drive Optocoupler
Switching Characteristics
Apply over all recommended conditions, typical value is measured at VDD = 30 V, VSS = Ground, TA = 25°C
unless otherwise specified.
Notes:
11. The difference between tPHL and tPLH between any two FOD3120 parts under same test conditions.
12. Common mode transient immunity at output high is the maximum tolerable negative dVcm/dt on the trailing edge of
the common mode impulse signal, Vcm, to assure that the output will remain high (i.e. VO> 15.0 V).
13. Common mode transient immunity at output low is the maximum tolerable positive dVcm/dt on the leading edge of
the common pulse signal, Vcm, to assure that the output will remain low (i.e. VO< 1.0 V).
Symbol Parameter Conditions Min. Typ. Max. Unit
tPHL
Propagation Delay Time to Logic
Low Output
IF = 7 mA to 16 mA,
Rg = 10 Ω , Cg =10 nF,
f = 10 kHz, Duty Cycle = 50%
150 275 400 ns
tPLH
Propagation Delay Time to Logic
High Output 150 255 400 ns
PWD Pulse Width Distortion,
| tPHL – tPLH | 20 100 ns
PDD
(Skew)
Propagation Delay Difference
Between Any Two Parts or
Channels, (tPHL – tPLH)(11)
-250 250 ns
tROutput Rise Time (10% – 90%) 60 ns
tFOutput Fall Time (90% – 10%) 60 ns
tUVLO ON UVLO Turn On Delay IF = 10 mA, VO > 5 V 1.6 μs
tUVLO OFF UVLO Turn Off Delay IF = 10 mA, VO < 5 V 0.4 μs
| CMH|Common Mode Transient
Immunity at Output High
TA = 25°C, VDD = 30 V,
IF = 7 to 16 mA,
VCM = 2000 V(12)
35 50 kV/μs
| CML|Common Mode Transient
Immunity at Output Low
TA = 25°C, VDD = 30 V, VF = 0 V,
VCM = 2000 V(13) 35 50 kV/μs
©2003 Fairchild Semiconductor Corporation www.fairchildsemi.com
FOD3120 Rev. 1.4 7
FOD3120 — High Noise Immunity, 2.5 A Output Current, Gate Drive Optocoupler
Typical Performance Characteristics
T
A
- AMBIENT TEMPERATURE (°C)
-40 -20 0 20 40 60 80 100
(V
OH
-V
DD
) - HIGH OUTPUT VOLTAGE DROP (V)
-0.30
-0.25
-0.20
-0.15
-0.10
-0.05
0.00
V
DD
= 15V to 30V
V
SS
=0V
I
F
= 7mA to 16mA
I
O
= -100mA
T
A
AMBIENT TEMPERATURE (°C)
-4 0 - 20 0 2 0 40 60 80 100
I
OH
OUTPUT HIGH CUR RENT (A)
0
1
2
3
4
5f=100Hz
DUTY CYCLE = 0.5%
IF= 7 t o 16m A
Rg=10
Ωto GND
V
DD
= 15V
V
DD
= 30V
T
A
-AMBIENTTEMPERATURE(°C)
-40 -20 0 20 40 60 8 0 100
V
OL
- OUTPUT LOW VOLTAGE (V)
0. 0 0
0. 0 5
0. 1 0
0. 1 5
0. 2 0
0. 2 5 V
DD
=15Vto30V
V
SS
=0V
V
F(OFF)
=-3Vto0.8V
I
O
= 100mA
T
A
AMBIENT TEMPERATURE (°C)
-4 0 -2 0 0 20 40 60 80 10 0
I
OH
OUTPUT H IGH CURRENT (A)
0
2
4
6
8f = 200 Hz
DUTY CYCLE = 0.2%
I
F
= 7 to 16m A
R
g
=5
Ωto GND
V
DD
= 15V
V
DD
= 30V
I
OH
- OUTPUT HIGH CURRENT (A)
0. 0 0.5 1.0 1.5 2.0 2.5
(V
OH
-V
DD
) - OUTPUT HIGH VOLTAGE DROP ( V)
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
0.0
0.5
T
A
=-40°C
T
A
=100°C
T
A
=25
°C
Frequency = 250Hz
Duty Cycle = 0.1%
I
F
= 7 to 16mA
V
DD
=15to30V
V
SS
=0V
I
OL
- OUTPUT LOW CURRENT (A)
0.0 0.5 1.0 1.5 2.0 2.5
V
OL
- OUTPUT LOW VOLTAGE (V)
0
1
2
3
4
T
A
=-40°C
T
A
=100°C
T
A
=25°C
Fr equency = 250Hz
Duty Cycle = 99.9%
V
F(OFF)
= -3.0V to 0.8V
V
DD
= 15V to 30V
V
SS
=0V
Fig.
3
Output High Voltage Drop vs. Output High Current Fig.
4
Output High Voltage Drop vs. Ambient Temperature
Fig.
5
Output High Current vs. Ambient Temperature Fig.
6
Output High Current vs. Ambient Temperature
Fig.
8
Output Low Voltage vs. Ambient Temperature
Fig.
7
Output Low Voltage vs. Output Low Current
©2003 Fairchild Semiconductor Corporation www.fairchildsemi.com
FOD3120 Rev. 1.4 8
FOD3120 — High Noise Immunity, 2.5 A Output Current, Gate Drive Optocoupler
Typical Performance Characteristics (Continued)
T
A
- AMBIENT TEMPEATURE (°C)
-40 -20 0 20 40 60 80 100
I
D
D
- SUPPLY CURR ENT (mA)
2. 2
2. 4
2. 6
2. 8
3. 0
3. 2
3. 4
3. 6 V
DD
=30V
V
SS
=0V
I
F
=0mA(forI
D
D
L
)
I
F
=10mA(forI
DD
H
)
V-SUPPLY VOLTAGE (V)
15 20 25 30
I
DD
- SUPPLY CURR ENT (mA)
2.0
2.4
2.8
3.2
3.6
I
F
=10mA(forI
DD
H
)
I
F
=0mA(forI
DD
L
)
V
SS
=0 ,T
A
=25°C
I
DD
H
I
DD
L
V
DD
SUPPLY VOLTAGE (V)
15 18 21 24 2 7 30
t
P
- PROPAGATOIN DELAY (ns)
100
150
200
250
300
350
400
t
PLH
t
PHL
I
F
= 10mA
T
A
=25°C
Rg = 10
Ω, Cg = 10 nF
DUTY CYC LE = 50%
f=10kHz
T
A
AMBIENT TEMPERATURE (°C)
-4 0 - 20 0 2 0 40 60 80 100
IOL OUTPUT LOW CURRENT (A)
0
1
2
3
4
5f=100Hz
DUTY CYC LE = 99.5 %
I
F
=7to16mA
R
g
=10
Ωto V
DD
V
DD
= 15V
V
DD
= 30V
T
A
- AMBIENT TEMPERATURE (°C)
-40 -20 0 20 40 60 80 100
I
FLH
- LOW TO HIGH CURRENT THRESHOLD (mA)
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
DD
= 15V to 30V
V
SS
=0V
Output = Open
T AMBIENT TEMPERATURE (°C)
-40 - 20 0 20 40 60 8 0 1 00
I
OL
OUTPUT LOW CURRENT (A)
0
2
4
6
8f=200Hz
DUTY CYCLE = 99.8%
I
F
= 7 to 16mA
R
g
=5
Ωto VDD
VDD =15V
VDD =30V
Fig.
9
Output Low Current vs. Ambient Temperature Fig.
10
Output Low Current vs. Ambient Temperature
Fig.
11
Supply Current vs. Ambient Temperature Fig. 1
2
Supply Current vs. Supply Voltage
Fig. 1
3
Low to High Input Current Threshold vs.
Ambient Temperature
Fig. 1
4
Propagation Delay vs. Supply Voltage
I
DD
H
I
DD
L
©2003 Fairchild Semiconductor Corporation www.fairchildsemi.com
FOD3120 Rev. 1.4 9
FOD3120 — High Noise Immunity, 2.5 A Output Current, Gate Drive Optocoupler
Typical Performance Characteristics (Continued)
I
F
–FORWARDLEDCURRENT (mA)
6 8 10 12 14 16
t
P
–PROPOGATION DELAY (ns)
t
P
–PROPOGATION DELAY (ns)
t
P
–PROPOGATION DELAY (ns)
t
P
–PROPOGATION DELAY (ns)
100
200
300
400
500
t
PLH
t
PH L
V
DD
=30V,V
SS
=0V
Rg = 10
Ω, C g = 1 0nF
T
A
=25°C
DUTY CYC LE = 50%
f=10kHz
T
A
AMBIENT TEMPERATURE (°C)
-40-200 20406080100
100
200
300
400
500
t
PLH
t
PH L
I
F
= 10mA
V
DD
= 30V , V
SS
=0V
Rg = 10
Ω, Cg = 1 0nF
DUTY CYC LE = 50%
f=10kHz
R
g
-SERIESLOADRESISTANCE (Ω)
01020304050
100
200
300
400
500
t
PLH
t
PH L
I
F
= 10mA
V
DD
= 30V , V
SS
=0V
Cg = 10nF
T
A
=25°C
DUTY CYC LE = 50%
f=10 kHz
C
g
-LOADCA PACITANCE (n F)
0 20 40 6 0 80 100
100
200
300
400
500
t
PLH
t
PH L
I
F
= 10mA
V
DD
=30V,V
SS
=0V
Rg = 10Ω
T
A
=25°C
DUTY CYC LE = 50%
f=10kHz
V
F
-FORWARDVOLTAGE (V)
0. 6 0 . 8 1. 0 1 .2 1. 4 1 .6 1 . 8
I
F
-FORWARDCURRENT (mA)
0.001
0. 01
0.1
1
10
100
T
A
=100°C
T
A
=-40°C
T
A
=25°C
0
5
10
15
20
25
30
35
01 2345
V
O
OUTPUT V OLTAGE (V)
I
F
– FOR WA RDLE DCURREN T ( mA )
T
A
=25°C
V
DD
=30V
Fig. 16 Propagation Delay vs. Ambient Temperature
Fig. 17 Propagation Delay vs. Sereies Load Resistance
Fig. 19 Transfer Characteristics Fig. 20 Input Forward Current vs. Forward Voltage
Fig. 18 Propagation Delay vs. Load Capacitance
Fig. 15 Propagation Delay vs. LED Forward Current
©2003 Fairchild Semiconductor Corporation www.fairchildsemi.com
FOD3120 Rev. 1.4 10
FOD3120 — High Noise Immunity, 2.5 A Output Current, Gate Drive Optocoupler
Typical Performance Characteristics (Continued)
0
2
4
6
8
10
12
14
0 5 10 15 20
V
O
OUTP UT VOLTAGE (V)
(V
DD
-V
SS
)–SUPPLYVOLTAGE (V)
(12.7 5, 12.80)
(11.25, 11.30)
(11.20 , 0 .00) (12.70, 0.00)
Fig. 21 Under Voltage Lockout
©2003 Fairchild Semiconductor Corporation www.fairchildsemi.com
FOD3120 Rev. 1.4 11
FOD3120 — High Noise Immunity, 2.5 A Output Current, Gate Drive Optocoupler
Test Circuit
Figure 22. IOL Test Circuit
Figure 23. IOH Test Circuit
+
+
Power Supply
VDD = 15 V to 30 V
Power Supply
V = 6 V
1
2
PW = 4.99 ms
Period = 5 ms
ROUT = 50 Ω
R2
100 Ω
Frequency = 200 Hz
Duty Cycle = 99.8%
VDD = 15 V to 30 V
VSS = 0 V
VF(OFF) = -3.0 V to 0.8 V
C1
0.1 μF
Pulse-In
LED-IFmon
Pulse Generator
Test Conditions:
3
4
8
7
6
5
To Scope
VOL
R1
100 Ω
47 μF
C2
+
C3
0.1 μF
D147 μF
C4
+
Iol
1
2
PW = 10 μs
Period = 5 ms
ROUT = 50 Ω
R2
100 Ω
Frequency = 200 Hz
Duty Cycle = 0.2%
VDD = 15 V to 30 V
VSS = 0 V
IF = 7 mA to 16 mA
C1
0.1 μF
Pulse-In
LED-IFmon
Pulse Generator
Test Conditions:
3
4
8
7
6
5
Power Supply
VDD = 15 V to 30 V
+
+
Power Supply
V = 6 V
To Scope
VOH
R1
100 Ω
47 μF
C2
+
C3
0.1 μF
D1
Current
Probe
Ioh 47 μF
C4
+
©2003 Fairchild Semiconductor Corporation www.fairchildsemi.com
FOD3120 Rev. 1.4 12
FOD3120 — High Noise Immunity, 2.5 A Output Current, Gate Drive Optocoupler
Test Circuit (Continued)
Figure 24. VOH Test Circuit
Figure 25. VOL Test Circuit
1
2
IF = 7 to 16 mA
VO
3
4
8
7
6
5
0.1 μF
100 mA
+V
DD
= 15 to 30 V
1
2
VO
3
4
8
7
6
5
0.1 μF
100 mA
+V
DD
= 15 to 30 V
©2003 Fairchild Semiconductor Corporation www.fairchildsemi.com
FOD3120 Rev. 1.4 13
FOD3120 — High Noise Immunity, 2.5 A Output Current, Gate Drive Optocoupler
Test Circuit (Continued)
Figure 26. IDDH Test Circuit
Figure 27. IDDL Test Circuit
1
2
IF = 7 to 16 mA
VO
3
4
8
7
6
5
0.1 μF
+ VDD = 30 V
1
2
VF = -0.3 to 0.8 V
VO
3
4
8
7
6
5
0.1 μF
+ VDD = 30 V
+
©2003 Fairchild Semiconductor Corporation www.fairchildsemi.com
FOD3120 Rev. 1.4 14
FOD3120 — High Noise Immunity, 2.5 A Output Current, Gate Drive Optocoupler
Test Circuit (Continued)
Figure 28. IFLH Test Circuit
Figure 29. VFHL Test Circuit
Figure 30. UVLO Test Circuit
1
2
VO > 5 V
3
4
8
7
6
5
0.1 μF
IF
+ VDD = 15 to 30 V
1
2
VF = –0.3 to 0.8 V
VO
3
4
8
7
6
5
0.1 μF
+
1
2
VO = 5 V
3
4
8
7
6
5
0.1 μF
15 V or 30 V
VDD Ramp
+
IF = 10 mA
+ VDD = 15 to 30 V
©2003 Fairchild Semiconductor Corporation www.fairchildsemi.com
FOD3120 Rev. 1.4 15
FOD3120 — High Noise Immunity, 2.5 A Output Current, Gate Drive Optocoupler
Test Circuit (Continued)
Figure 31. t
PHL
, t
PLH
, t
R
and t
F
Test Circuit and Waveforms
Figure 32. CMR Test Circuit and Waveforms
V
O
Probe
F = 10 kHz
DC = 50%
I
F
V
OUT
t
PLH
Cg = 10 nF
Rg = 10 Ω
50 Ω
1
2
3
4
8
7
6
5
0.1 μF
+ V
DD
= 15 to 30 V
+
t
r
t
f
90%
50%
10%
t
PHL
1
2
A
B
V
O
3
4
8
7
6
5
0.1 μF
V
DD
= 30 V
V
CM
= 2,000 V
I
F
+
5V +
Δt
V
CM
V
O
Switch at A: I
F
= 10 mA
Switch at B: I
F
= 0 mA
V
OH
V
O
V
OL
0V
+ –
©2003 Fairchild Semiconductor Corporation www.fairchildsemi.com
FOD3120 Rev. 1.4 16
FOD3120 — High Noise Immunity, 2.5 A Output Current, Gate Drive Optocoupler
Reflow Profile
Profile Freature Pb-Free Assembly Profile
Temperature Min. (Tsmin) 150°C
Temperature Max. (Tsmax) 200°C
Time (tS) from (Tsmin to Tsmax) 60–120 seconds
Ramp-up Rate (tL to tP) 3°C/second max.
Liquidous Temperature (TL) 217°C
Time (tL) Maintained Above (TL) 60–150 seconds
Peak Body Package Temperature 260°C +0°C / –5°C
Time (tP) within 5°C of 260°C 30 seconds
Ramp-down Rate (TP to TL) 6°C/second max.
Time 25°C to Peak Temperature 8 minutes max.
Time (seconds)
Temperature (°C)
Time 25°C to Peak
260
240
220
200
180
160
140
120
100
80
60
40
20
0
TL
ts
tL
tP
TP
Tsm a x
Tsm i n
120
Preheat Area
Max. Ramp-up Rate = 3°C/S
Max. Ramp-down Rate = 6°C/S
240 360
©2003 Fairchild Semiconductor Corporation www.fairchildsemi.com
FOD3120 Rev. 1.4 17
FOD3120 — High Noise Immunity, 2.5 A Output Current, Gate Drive Optocoupler
Ordering Information
Marking Information
Part Number Package Packing Method
FOD3120 DIP 8-Pin Tube (50 units per tube)
FOD3120S SMT 8-Pin (Lead Bend) Tube (50 units per tube)
FOD3120SD SMT 8-Pin (Lead Bend) Tape and Reel (1,000 units per reel)
FOD3120V DIP 8-Pin, DIN_EN/IEC60747-5-5 option Tube (50 units per tube)
FOD3120SV SMT 8-Pin (Lead Bend), DIN_EN/IEC60747-5-5 option Tube (50 units per tube)
FOD3120SDV SMT 8-Pin (Lead Bend), DIN_EN/IEC60747-5-5 option Tape and Reel (1,000 units per reel)
FOD3120TV DIP 8-Pin, 0.4” Lead Spacing, DIN_EN/IEC60747-5-5 option Tube (50 units per tube)
FOD3120TSV SMT 8-Pin, 0.4” Lead Spacing, DIN_EN/IEC60747-5-5 option Tube (50 units per tube)
FOD3120TSR2V SMT 8-Pin, 0.4” Lead Spacing, DIN_EN/IEC60747-5-5 option Tape and Reel (700 units per reel)
1
2
6
43 5
Definitions
1 Fairchild logo
2 Device number
3 DIN_EN/IEC60747-5-5 Option (only appears on
component ordered with this option)
4 Two digit year code, e.g., ‘16’
5 Two digit work week ranging from ‘01’ to ‘53’
6 Assembly package code
3120
BYYVXX
Figure 33. Top Mark
©2003 Fairchild Semiconductor Corporation www.fairchildsemi.com
FOD3120 Rev. 1.4 18
FOD3120 — High Noise Immunity, 2.5 A Output Current, Gate Drive Optocoupler
Carrier Tape Specifications (Option SD)
Symbol Description Dimension in mm
W Tape Width 16.0 ± 0.3
t Tape Thickness 0.30 ± 0.05
P0Sprocket Hole Pitch 4.0 ± 0.1
D0Sprocket Hole Diameter 1.55 ± 0.05
E Sprocket Hole Location 1.75 ± 0.10
F Pocket Location 7.5 ± 0.1
P22.0 ± 0.1
P Pocket Pitch 12.0 ± 0.1
A0Pocket Dimensions 10.30 ±0.20
B010.30 ±0.20
K04.90 ±0.20
W1Cover Tape Width 13.2 ± 0.2
d Cover Tape Thickness 0.1 max
Max. Component Rotation or Tilt 10°
R Min. Bending Radius 30
d
0
P
t2
D
0
1
1
W
User Direction of Feed
0
K
B
0
A
0
W
E
D
F
P
P
©2003 Fairchild Semiconductor Corporation www.fairchildsemi.com
FOD3120 Rev. 1.4 19
FOD3120 — High Noise Immunity, 2.5 A Output Current, Gate Drive Optocoupler
Carrier Tape Specifications (Option TSR2)
Symbol Description Dimension in mm
W Tape Width 24.0 ± 0.3
t Tape Thickness 0.40 ± 0.1
P0Sprocket Hole Pitch 4.0 ± 0.1
D0Sprocket Hole Diameter 1.55 ± 0.05
E Sprocket Hole Location 1.75 ± 0.10
F Pocket Location 11.5 ± 0.1
P22.0 ± 0.1
P Pocket Pitch 16.0 ± 0.1
A0Pocket Dimensions 12.80 ± 0.1
B010.35 ± 0.1
K05.7 ±0.1
W1Cover Tape Width 21.0 ± 0.1
d Cover Tape Thickness 0.1 max
Max. Component Rotation or Tilt 10°
R Min. Bending Radius 30
d
0
P
t2
D
0
1
1
W
User Direction of Feed
0
K
B
0
A
0
W
E
D
F
P
P
www.onsemi.com
1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
N. American Technical Support: 8002829855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81358171050
www.onsemi.com
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 3036752175 or 8003443860 Toll Free USA/Canada
Fax: 3036752176 or 8003443867 Toll Free USA/Canada
Email: orderlit@onsemi.com
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
© Semiconductor Components Industries, LLC