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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (MOSII.5)
2SK1359
DCDC Converter and Motor Drive Applications
z Low drain−source ON resistance : RDS (ON) = 3.0 Ω (typ.)
z High forward transfer admittance : |Yfs| = 2.0 S (typ.)
z Low leakage current : IDSS = 300 μA (max) (VDS = 800 V)
z Enhancement mode : Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Drainsource voltage VDSS 1000 V
Draingate voltage (RGS = 20 k) VDGR 1000 V
Gatesource voltage VGSS ±30 V
DC (Note 1) ID 5
Drain current
Pulse (Note 1) IDP 15
A
Drain power dissipation (Tc = 25°C) PD 125 W
Channel temperature Tch 150 °C
Storage temperature range Tstg 55~150 °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics Symbol Max Unit
Thermal resistance, channel to case Rth (chc) 1.0 °C / W
Thermal resistance, channel to
ambient Rth (cha) 50 °C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Unit: mm
1. GATE
2. DRAIN (HEAT SINK)
3. SOURCE
JEDEC
JEITA
TOSHIBA 2-16C1B
Weight: 4.6 g (typ.)
Start of commercial production
1989-02
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Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate leakage current IGSS V
GS = ±25 V, VDS = 0 V — — ±50 nA
Drain cutoff current IDSS V
DS = 800 V, VGS = 0 V — — 300 A
Drainsource breakdown voltage V (BR) DSS I
D = 10 mA, VGS = 0 V 1000 — — V
Gate threshold voltage Vth V
DS = 10 V, ID = 1 mA 1.5 — 3.5 V
Drainsource ON resistance RDS (ON) V
GS = 10 V, ID = 2 A — 3.0 3.8
Forward transfer admittance |Yfs| VDS = 20 V, ID = 2 A 1.0 2.0 — S
Input capacitance Ciss — 700 —
Reverse transfer capacitance Crss — 55 —
Output capacitance Coss
VDS = 25 V, VGS = 0V, f = 1 MHz
— 100 —
pF
Rise time tr — 18 —
Turnon time ton — 30 —
Fall time tf — 12 —
Switching time
Turnoff time toff — 70 —
ns
Total gate charge (Gatesource
plus gatedrain) Qg — 60 —
Gatesource charge Qgs — 35 —
Gatedrain (“miller”) charge Qgd
VDD 400 V, VGS = 10 V, ID = 4 A
— 25 —
nC
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Continuous drain reverse current
(Note 1)
IDR — — — 5 A
Pulse drain reverse current
(Note 1)
IDRP — — — 15 A
Forward voltage (diode) VDSF I
DR = 4 A, VGS = 0 V — — 1.9 V
Marking
K1359
Lot No.
Note 2
Part No. (or abbreviation code)
Note 2: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2011/65/EU of the European Parliament
and of the Council of 8 June 2011 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
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• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES
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