BUK9230-100B,118 - NEXPERIA

1. Product profile

1.1 General description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using TrenchMOS technology. This product has been designed and qualified to

the appropriate AEC standard for use in automotive critical applications.

1.2 Features and benefits

AEC Q101 compliant

Low conduction losses due to low

on-state resistance

Suitable for logic level gate drive

sources

Suitable for thermally demanding

environments due to 185 °C rating

1.3 Applications

12 V, 24 V and 42 V loads

Automotive systems

General purpose power switching

Motors, lamps and soleno ids

1.4 Quick reference data

BUK9230-100B

N-channel TrenchMOS logic level FET

Rev. 02 — 1 February 2011 Product data sheet

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

VDS drain-source voltage Tj≥25 °C; Tj≤185 °C - - 100 V

IDdrain current VGS =5V; T

mb =25°C;

see Figure 1; see Fig ure 3 --47A

Ptot total power

dissipation Tmb = 25 °C; see Figure 2 --167W

Static characteristics

RDSon drain-source on-state

resistance VGS =10V; I

D=25A; T

j= 25 °C - 24 28 mΩ

VGS =5V; I

D=25A; T

j=25°C;

see Figure 9; see Fig ure 13 - 2530mΩ

Avalanche ruggedness

EDS(AL)S non-repetitive

drain-source

avalanche energy

ID=47A; V

sup ≤100 V;

RGS =50Ω; VGS =5V;

Tj(init) = 25 °C; unclamped

--150mJ

Dynamic characteristics

QGD gate-drain charge VGS =5V; I

D=25A; V

DS =80V;

Tj=25°C; see Figure 10 -13-nC

BUK9230-100B All information provided in this document is subject to legal disclaimers.

Product data sheet Rev. 02 — 1 February 2011 2 of 14

Nexperia BUK9230-100B

N-channel TrenchMOS logic level FET

2. Pinning information

[1] It is not possible to make a connection to pin 2 of the SOT428 package.

3. Ordering information

Tabl e 2. Pinning information

Pin Symbol Description Simplified outline Graphic symbol

1 G gate

SOT428 (DPAK)

2 D drain[1]

3Ssource

mb D mounting base; connected to drain

bb076

Table 3. Ordering information

Type number Package

Name Description Version

BUK9230-100B DPAK plastic single-ended surface-mounted package (DPAK); 3 leads

(one lead cropped) SOT428

BUK9230-100B All information provided in this document is subject to legal disclaimers.

Product data sheet Rev. 02 — 1 February 2011 3 of 14

Nexperia BUK9230-100B

N-channel TrenchMOS logic level FET

4. Limiting values

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VDS drain-source voltage Tj≥25 °C; Tj≤185 °C - 100 V

VDGR drain-gate voltage RGS =20kΩ- 100 V

VGS gate-source voltage -15 15 V

IDdrain current Tmb = 100 °C; VGS =5V; see Figure 1 -33A

Tmb =25°C; V

GS = 5 V; see Figure 1;

see Figure 3 -47A

IDM peak drain current Tmb = 25 °C; pulsed; tp≤10 µs;

see Figure 3 - 185 A

Ptot total power dissipation Tmb =25°C; see Figure 2 - 167 W

Tstg storage temperature -55 185 °C

Tjjunction temperature -55 185 °C

Source-drain diode

ISsource current Tmb =25°C - 47 A

ISM peak source current pulsed; tp≤10 µs; Tmb = 25 °C - 185 A

Avalanche ruggedness

EDS(AL)S non-repetitive drain -source

avalanche energy ID=47A; V

sup ≤100 V; RGS =50Ω;

VGS =5V; T

j(init) = 25 °C; unclamped - 150 mJ

Fig 1. Continuous drain current as a function of

mounting base temperature Fig 2. Normalized total power dissipatio n as a

function of mounting ba s e te mp e rature

03no40

0 50 100 150 200

(A)

Tmb (°C)

03no96

120

0 50 100 150 200

(°C)

der

(%)

BUK9230-100B All information provided in this document is subject to legal disclaimers.

Product data sheet Rev. 02 — 1 February 2011 4 of 14

Nexperia BUK9230-100B

N-channel TrenchMOS logic level FET

Fig 3. Safe operating area; continuous and pe ak drain currents as a function of drain -s ou rce voltage

03no39

VDS (V)

1 103

102

103

(A)

100 ms

10 ms

Limit RDSon = VDS / ID

1 ms

tp = 10 μs

100 μs

BUK9230-100B All information provided in this document is subject to legal disclaimers.

Product data sheet Rev. 02 — 1 February 2011 5 of 14

Nexperia BUK9230-100B

N-channel TrenchMOS logic level FET

5. Thermal characteristics

Table 5. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Rth(j-mb) thermal resistance from junction to

mounting base see Figure 4 --0.95K/W

Rth(j-a) thermal resistance from junction to

ambient - 71.4 - K/W

Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration

03nk52

single shot

0.2

0.1

0.05

0.02

10−3

10−2

10−1

10−610−510−410−310−210−1 1

tp (s)

Zth(j-mb)

(K/W)

δ = 0.5

δ =

BUK9230-100B All information provided in this document is subject to legal disclaimers.

Product data sheet Rev. 02 — 1 February 2011 6 of 14

Nexperia BUK9230-100B

N-channel TrenchMOS logic level FET

6. Characteristics

Table 6. Characteristics

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

V(BR)DSS drain-source breakdown

voltage ID= 0.25 mA; VGS =0V; T

j= -55 °C 89 - - V

ID= 0.25 mA; VGS =0V; T

j= 25 °C 100 - - V

VGS(th) gate-source threshold voltage ID=1mA; V

DS =V

GS; Tj= 185 °C;

see Figure 8 0.4--V

ID=1mA; V

DS =V

GS; Tj=25°C;

see Figure 8 1.1 1.5 2 V

ID=1mA; V

DS =V

GS; Tj=-55°C;

see Figure 8 --2.3V

IDSS drain leakage current VDS =100V; V

GS =0V; T

j= 185 °C - - 500 µA

VDS =100V; V

GS =0V; T

j= 25 °C - 0.02 1 µA

IGSS gate leakage current VGS =15V; V

DS =0V; T

j= 25 °C - 2 100 nA

VGS =-15V; V

DS =0V; T

j= 25 °C - 2 100 nA

RDSon drain-source on-state

resistance VGS =5V; I

D=25A; T

j=185°C;

see Figure 9; see Figure 13 --78mΩ

VGS =10V; I

D=25A; T

j= 25 °C - 24 28 mΩ

VGS =4.5V; I

D=25A; T

j=25°C --33mΩ

VGS =5V; I

D=25A; T

j=25°C;

see Figure 9; see Figure 13 - 2530mΩ

Dynamic characteristics

QG(tot) total gate charge ID=25A; V

DS =80V; V

GS =5V;

Tj=25°C; see Figure 10 -33-nC

QGS gate-source charge - 7 - nC

QGD gate-drain charge - 13 - nC

Ciss input capacitance VGS =0V; V

DS =25V; f=1MHz;

Tj=25°C; see Figure 11 - 2854 3805 pF

Coss output capacitance - 232 278 pF

Crss reverse transfer capacitance - 81 110 pF

td(on) turn-on delay time VDS =30V; R

L=1.2Ω; VGS =5V;

RG(ext) =10Ω; Tj=25°C -30-ns

trrise time - 86 - ns

td(off) turn-off delay time - 96 - ns

tffall time - 46 - ns

LDinternal drain inductance measured from drain to center of die ;

Tj=25°C -2.5-nH

LSinternal source inductance measured from source lead to source

bond pad ; Tj=25°C -7.5-nH

Source-drain diode

VSD source-drain voltage IS=25A; V

GS =0V; T

j=25°C;

see Figure 12 - 0.85 1.2 V

trr reverse recovery time IS=20A; dI

S/dt = -100 A/µs;

VGS =-10V; V

DS =30V; T

j=25°C -114-ns

Qrrecovered charge - 196 - nC

BUK9230-100B All information provided in this document is subject to legal disclaimers.

Product data sheet Rev. 02 — 1 February 2011 7 of 14

Nexperia BUK9230-100B

N-channel TrenchMOS logic level FET

Fig 5. Outp ut characteristics: dra in current as a

function of drain-source volta ge; typ ical values Fig 6. Dr ain-source on-state resistance as a fun ction

of gate-source voltage; typical value s

Fig 7. Tran sfer characteristics: drain current as a

function of gate-source voltage; typical values Fig 8. Gate-so ur ce threshold voltage as a function of

junction temperature

03no36

105

140

0246810

(V)

(A)

Label is V

(V)

4.2

3.8

3.6

3.4

3.2

2.8

2.6

4.6

4.4

03no35

3 7 11 15

VGS (V)

RDSon

(mΩ)

03no34

01234

VGS (V)

(A)

Tj = 185 °C°C

Tj = 25

03no99

0.0

0.5

1.0

1.5

2.0

2.5

−60 10 80 150 220

Tj (°C)

VGS(th)

(V)

max

typ

min

BUK9230-100B All information provided in this document is subject to legal disclaimers.

Product data sheet Rev. 02 — 1 February 2011 8 of 14

Nexperia BUK9230-100B

N-channel TrenchMOS logic level FET

Fig 9. Drain-source on-state resistance as a function

of drain current; typical values Fig 10. Gate-source voltage as a function of gate

charge; typical values

Fig 11. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical

values

Fig 12. Source current as a fu nction of source-drain

voltage; typical values

03no37

0 35 70 105 140

ID (A)

RDSon

(mΩ)

Label is VGS (V)

3.4 3.6 3.8 4 5 10

03no32

0 10203040

QG (nC)

VGS

(V)

VDD = 80 V

VDD = 14 V

03no38

1250

2500

3750

5000

10−1 1 10 102

VDS (V)

(pF) Ciss

Coss

Crss

03no31

100

0.0 0.3 0.6 0.9 1.2

VSD (V)

(A)

Tj = 185 °C

Tj = 25 °C

BUK9230-100B All information provided in this document is subject to legal disclaimers.

Product data sheet Rev. 02 — 1 February 2011 9 of 14

Nexperia BUK9230-100B

N-channel TrenchMOS logic level FET

Fig 13. Normalized drain-source on-state resistance factor as a function of junction temperature

03np02

0.7

1.4

2.1

2.8

-60 10 80 150 220

Tj (°C)

BUK9230-100B All information provided in this document is subject to legal disclaimers.

Product data sheet Rev. 02 — 1 February 2011 10 of 14

Nexperia BUK9230-100B

N-channel TrenchMOS logic level FET

7. Package outline

Fig 14. Package outline SOT428 (DPAK)

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

SOT428 SC-63

TO-252

SOT42

06-02-14

06-03-16

DIMENSIONS (mm are the original dimensions)

lastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped)

mounting

base

b1c

0 5 10 mm

scale

UNIT

mm 0.93

0.46

5.46

5.00

0.56

0.20

6.22

5.98

6.73

6.47

10.4

9.6

2.95

2.55

2.38

2.22

1.1

0.9

b1e1

0.89

0.71

bcD

0.9

0.5

2.285 4.57

4.0

min

4.45

min

0.5

min

HDLw

0.2

max

0.2

BUK9230-100B All information provided in this document is subject to legal disclaimers.

Product data sheet Rev. 02 — 1 February 2011 11 of 14

Nexperia BUK9230-100B

N-channel TrenchMOS logic level FET

8. Revision history

Table 7. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BUK9230-100B v.2 20110201 Product data sheet - BUK9230_100B v.1

Modifications: •The format of this data sheet has been redesigned to comply with the new identity guidelines

of NXP Semiconductors.

•Legal texts have been adapted to the new company name where appropriate.

BUK9230_100B v.1 20040122 Product data - -

BUK9230-100B All information provided in this document is subject to legal disclaimers.

Product data sheet Rev. 02 — 1 February 2011 12 of 14

Nexperia BUK9230-100B

N-channel TrenchMOS logic level FET

9. Legal information

9.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term 'short data sheet' is explained in section "Definitions".

[3] The product status of device(s) described in this document may have changed since this do cument was p ublished and may differ in case of multiple devices. The latest product

status information is available on the Internet at URL http://www.nexperia.com.

9.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. Nexperia does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liab ility for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and tit le. A short data sh eet is intended

for quick reference only and shou ld not b e relied u pon to cont ain det ailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local Nexperia sales

office. In case of any inconsistency or conflict with the short data sheet, the

full data sheet shall pre va il.

Product specifica t io n — The information and data provided in a Product

data sheet shall define the specification of the product as agreed between

Nexperia and its customer, unless Nexperia and

customer have explicitly agreed otherwise in writing. In no event however,

shall an agreement be valid in which the Nexperia product is

deemed to off er functions and qualities beyond those described in the

Product data sheet.

9.3 Disclaimers

Limited warranty and liability — Information in this document is believed to

be accurate and reliable. However, Nexperia does not give any

representations or warrant ies, expressed or implied, as to the accuracy or

completeness of such information and shall have no liability for the

consequences of use of such information.

In no event shall Nexperia be liable for any indirect, incidental,

punitive, special or consequ ential damages (including - wit hout limitation - lost

profits, lost savings, business interruption, costs related to the removal or

replacement of any products or rework charges) whether or not such

damages are based on tort (including negligence), warranty, breach of

contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason

whatsoever, Nexperia’s aggregate and cumulative liability towards

customer for the products described herein shall be limited in accordance

with the Terms and conditions of commercial sale of Nexperia.

Right to make changes — Nexperia reserves the right to make

changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all informa tion supplied prior

to the publication hereof .

Suitability for use in automotive applications — This Nexperia

product has been qualified for use in automotive

applications. The product is not designed, authorized or warranted to be

suitable for use in medica l, military, aircraft, space or life support equipment,

nor in applications where failure or malfunction of a Nexperia

product can reasonably be expected to result in personal injury, death or

severe property or environmental damage. Nexperia accepts no

liability for inclusion and/or use of Nexperia products in such

equipment or applications and therefore such inclusion and/or use is at the

customer’s own risk.

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. Nexperia makes no

representation or warranty that such applications will be suitable for the

specified use without further testing or modification.

Customers are responsible for the design and ope ration of their applications

and products using Nexperia products, and Nexperia

accepts no liability for any assistance with applications or customer product

design. It is customer’s sole responsibility to determine whether the Nexperia

product is suitable and fit for the customer’s applications and

products planned, as well as fo r the planned application and use of

customer’s third party customer(s). Custo mers should provide appropriate

design and operating safeguards to minimize the risks associated with their

applications and products.

Nexperia does not accept any liability related to any default,

damage, costs or problem which is based on any weakness or default in the

customer’s applications or products, or the application or use by customer’s

third party custo mer(s). Customer is responsible for doing all necessary

testing for the customer’s applications and products using Nexperia

products in order to avoid a default of the applications and

the products or of the application or use by customer’s third party

customer(s). Nexperia does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (prope r)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanently and irreversibly affect

the quality and reliability of the device.

Terms and conditions of commercial sale — Nexperia

products are sold subject to the general terms and conditions of commercial

sale, as published at http://www.nexperia.com/profile/terms, unless otherwise

agreed in a valid written individual agreement. In case an individual

Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contains data from the objective specification for product development.

Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.

Product [short] data sheet Production This document contains the produ ct specification.

BUK9230-100B All information provided in this document is subject to legal disclaimers.

Product data sheet Rev. 02 — 1 February 2011 13 of 14

Nexperia BUK9230-100B

N-channel TrenchMOS logic level FET

agreement is concluded only the terms and conditions of the respective

agreement shall apply. Nexperia hereby expressly objects to

applying the customer’s general terms and co nditions with regard to the

purchase of Nexperia products by customer.

No offer to sell or license — Nothing in this document ma y be interpret ed or

construed as an of fer to se ll product s that is op en for accept ance or the grant ,

conveyance or implication of any license under any copyrights, patent s o r

other industrial or intellectual property rights.

Export control — This document as well as the item(s) d escribed herein may

be subject to export control regulat i ons. Export might require a prior

authorization from national authorities.

9.4 Trademarks

Notice: All referenced b rands, produc t names, service names and trademarks

are the property of their respective ow ners.

10. Contact information

For more information, please visit: http://www.nexperia.com

For sales office addresses, please send an email to: salesaddresses@nexperia.com

Nexperia BUK9230-100B

N-channel TrenchMOS logic level FET

11. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1

1.1 General description . . . . . . . . . . . . . . . . . . . . . .1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . .1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . .2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . .2

4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3

5 Thermal characteristics . . . . . . . . . . . . . . . . . . .5

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .6

7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10

8 Revision history. . . . . . . . . . . . . . . . . . . . . . . . .11

9 Legal information. . . . . . . . . . . . . . . . . . . . . . . .12

9.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .1 2

9.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .12

9.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .12

9.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .13

10 Contact information. . . . . . . . . . . . . . . . . . . . . .13

For more information, please visit: http://www.nexperia.com

For sales office addresses, please send an email to: salesaddresses@nexperia.com

Date of release:

01 February 2011