@vic MMBT2222ALT1 SOT-23 Plastic-Encapsulate Transistors MMBT2222ALT1 TRANSISTOR (NPN) SOT-23 FEATURES 1. BASE 2. EMITTER Power dissipation 1. 0 W (Tamb=25) Collector current 0.6 A ICM: Collector-base voltage 75 V V(BR)CBO: Operating and storage junction temperature range 0. 95 0. 4 2. 9 2. 4 1. 3 0. 95 0.3 1. 9 PCM: 3. COLLECTOR TJ, Tstg: -55 to +150 Unit: mm ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol unless otherwise specified) Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 10A, IE=0 75 V Collector-emitter breakdown voltage V(BR)CEO Ic= 10mA, IB=0 40 V Emitter-base breakdown voltage V(BR)EBO IE=10A, IC=0 6 V Collector cut-off current ICBO VCB=70V, IE=0 0.1 A Collector cut-off current ICEO VCE=35V, IB=0 0.1 A Emitter cut-off current IEBO VEB= 3V, IC=0 0.1 A HFE(1) VCE=10V, IC= 150mA 100 HFE(2) VCE=10V, IC= 1mA 50 Collector-emitter saturation voltage VCE(sat) IC=500mA, IB= 50mA 0.6 V Base-emitter saturation voltage VBE(sat) IC=500mA, IB= 50mA 1.2 V fT VCE=20V, IC= 20mA f=100MHz 300 DC current gain Transition frequency 300 MHz DEVICE MARKING: MMBT2222A = 1P Copyright @vic Electronics Corp. Website http://www.avictek.com