MMBT2222ALT1 - Avic Electronics Corp.

1.9

0.950.95

2.9

0.4

1. 3

2. 4

1.0

SOT-23 Plastic-Encapsulate Transistors

MMBT2222ALT1 TRANSISTOR (NPN)

FEATURES

Power dissipation

PCM: 0.3 W (Tamb=25℃)

Collector current

ICM: 0.6 A

Collector-base voltage

V(BR)CBO: 75 V

Operating and storage junction temperature range

TJ, Tstg: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter Symbol Test conditions MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO Ic= 10µA, IE=0 75 V

Collector-emitter breakdown voltage V(BR)CEO Ic= 10mA, IB=0 40 V

E mitter-base break down vol t age V(BR)EBO IE=10µA, IC=0 6 V

Collector cut-off current ICBO V

CB=70V, IE=0 0.1

µA

Collector cut-off current ICEO V

CE=35V, IB=0 0.1

µA

E mitte r cut-off current IEBO V

EB= 3V, IC=0 0.1

µA

HFE(1) V

CE=10V, IC= 150mA 100 300

DC current gain HFE(2) V

CE=10V, IC= 1mA 50

Collector-emitter saturation voltage VCE(sat) IC=500 mA, IB= 50mA 0.6 V

Base-emitter satu ration voltage VBE(sat) IC=500 mA, IB= 50mA 1. 2 V

Trans ition frequency fT VCE=20V, IC= 20 mA

f=100MHz 300 MHz

DEVICE MARKING:

MMBT2222A = 1P

Unit: mm

SOT-23

1. BASE

2. E MITTER

3. COLLECTOR

@vic

MMBT2222ALT1