© Semiconductor Components Industries, LLC, 2016
October, 2017 − Rev. 2
1Publication Order Number:
NSPM5131/D
NSPM5131
ESD Protection Diode
Low Clamping Voltage
Features
•Unidirectional High Voltage ESD Protection
•Provides ESD Protection to IEC61000−4−2 Level 4:
±30 kV Contact Discharge
•IEC 61000−4−5 (lighting)
•High Voltage Zener Diode Protects Supply Rail up to 160 A (8/20 ms)
•These Devices are Pb−Free and are RoHS Compliant
APPLICATION DIAGRAM
Vcc (1)
DAP**
**Die Attach Pad on
back of package
(connect to ground)
GND (5)
GND (6)
MARKING DIAGRAM
Device Package Shipping†
ORDERING INFORMATION
BLOCK DIAGRAM
www.onsemi.com
UDFN6
(Pb−Free)
3000/Tape &
Reel
NSPM5131MUTBG
UDFN6
CASE 517CS
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
A3 = Specific Device Code
M = Date Code
G= Pb−Free Package
A3 M
G
1
Cathode Anode
NSPM5131
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2
Table 1. PIN DESCRIPTIONS
4−Channel, 6−Lead, UDFN−8 Package
Pin Name Type Description
1 VCC HV VDD HV ESD Channel
2 N/C No Connect
3 N/C No Connect
4 N/C No Connect
5 GND Ground
6 GND Ground
7 GND Ground
8 GND Ground
PACKAGE / PINOUT DIAGRAMS
Pin 1
Marking
6−Lead UDFN
Top View
(Pins Down View)
Bottom View
(Pins Up View)
12 4
65
XX M
6 5
1 2 3 4
3
78
ELECTRICAL CHARACTERISTICS
Symbol Parameter
IPP Maximum Reverse Peak Pulse Current
VCClamping Voltage @ IPP
VRWM Working Peak Reverse Voltage
IRMaximum Reverse Leakage Current @ VRWM
VBR Breakdown Voltage @ IT
ITTest Current
QVBR Maximum Temperature Coefficient of VBR
IFForward Current
VFForward Voltage @ IF
Uni−Directional
IPP
IF
V
I
IR
IT
VRWM
VCVBR
VF
SPECIFICATIONS
Table 2. MAXIMUM RATINGS
Parameter Rating Units
Operating Temperature Range –55 to +125 °C
Storage Temperature Range –65 to +150 °C
Peak Current (tp = 8/20 ms) 160 A
Stresses at or above those listed in Maximum Ratings table may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Also,
due to variations in test equipment, stresses shown above are averages.
ELECTRICAL CHARACTERISTICS
Device Name
Device
Marking
VRWM (V)
(Note 1) IR @ VRWM A)
Breakdown Voltage
VC @ IPP
(8 x 20 ms) (Note 3)
VBR V (Note 2) @ IT (mA) VC (V) IPP (A)
Max Max Min Nom Max Max
NSPM5131 A3 13.5 1 13.6 15.5 17.5 1 21.5 100
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. A transient suppressor is normally selected according to the working peak reverse voltage (VRWM), which should be equal to or greater than
the DC or continuous peak operating voltage level.
2. VBR measured at pulse test current IT at an ambient temperature of 25°C.
3. Surge current waveform per Figure 2.
NSPM5131
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3
TYPICAL CHARACTERISTICS
Figure 1. Clamping Voltage vs. Peak Pulse
Current (tp = 8/20 s)
Ipk (A)
6040200
0
5
10
15
20
25
30
Vpk @ Ipk (V)
14012010080 180160
Figure 2. IEC61000−4−5 8/20 s Pulse
Waveform
TIME (ms)
50
0
Ipp - PEAK PULSE CURRENT - %Ipp
100
tr = rise time to peak value [8 ms]
tf = decay time to half value [20 ms]
trtf
Peak
Value
Half Value
0
NSPM5131
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4
PACKAGE DIMENSIONS
ÍÍÍ
ÍÍÍ
ÍÍÍ
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED TERMINALS
AND IS MEASURED BETWEEN 0.15 AND 0.30mm
FROM THE TERMINAL TIP.
4. COPLANARITY APPLIES TO THE EXPOSED PAD
AS WELL AS THE TERMINALS.
A
SEATING
PLANE
D
E
0.10 C
A3
A
A1
2X
2X 0.10 C
UDFN6, 1.8 x 2, 0.4P
CASE 517CS
ISSUE O
DIM
A
MIN MAX
MILLIMETERS
0.45 0.55
A1 0.00 0.05
A3 0.125 REF
b0.15 0.25
D
D2
E
E2
e
L
PIN ONE
REFERENCE
0.05 C
0.05 C
NOTE 4
e1/2
D2
E2
4
6
1
L
5
1.80 BSC
0.35 0.55
2.00 BSC
0.74 0.94
0.40 BSC
0.20 0.40
BOTTOM VIEW
MOUNTING FOOTPRINT*
RECOMMENDED
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
2X
L1
DETAIL A
L
ALTERNATE
CONSTRUCTIONS
L
ÇÇ
ÇÇ
ÉÉ
DETAIL B
MOLD CMPDEXPOSED Cu
ALTERNATE
CONSTRUCTION
DETAIL A
DETAIL B
L1 --- 0.15
SIDE VIEW
TOP VIEW
B
6X
C
e1 0.80 BSC
e2 0.95 BSC
2X
A0.07 C
NOTE 3
e2
b
B
4
6
6X
1
5
0.05 C
SUPPLEMENTAL
0.10 C
0.10 C
e1
6X
e
e/2
BOTTOM VIEW
6X
0.48
0.95
0.40
PITCH
6X 0.25
0.40
PITCH
0.55
2X
2.20
2X
0.94
PACKAGE
OUTLINE
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N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
NSPM5131/D
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