RF3931 30W GaN WIDEBAND POWER AMPLIFIER Package Style: Hermetic 2-Pin Flanged Ceramic Features Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Gain = 15dB at 2GHz 48V Operation Typical Performance at 900MHz RF IN VGQ Pin 1 (CUT) RF OUT VDQ Pin 2 GND BASE * Output Power 50W * Drain Efficiency 65% Functional Block Diagram * -40C to 85C Operation Product Description Applications Commercial Wireless Infrastructure Cellular and WiMAX Infrastructure Civilian and Military Radar General Purpose Broadband Amplifiers Public Mobile Radios Industrial, Scientific and Medical The RF3931 is a 48V 30W high power discrete amplifier designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/medical, and general purpose broadband amplifier applications. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high-performance amplifiers achieve high efficiency and flat gain over a broad frequency range in a single amplifier design. The RF3931 is an unmatched GaN transistor packaged in a hermetic, flanged ceramic package. This package provides excellent thermal stability through the use of advanced heat sink and power dissipation technologies. Ease of integration is accomplished through the incorporation of simple, optimized matching networks external to the package that provide wideband gain and power performance in a single amplifier. Ordering Information RF3931S2 2-Piece sample bag RF3931SB 5-Piece bag RF3931SQ 25-Piece bag RF3931SR 100 Pieces on 7" short reel RF3931TR7 750 Pieces on 7" reel RF3931PCK-411 Fully assembled evaluation board optimized for 2.14GHz; 48V Optimum Technology Matching(R) Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT BiFET HBT RF MICRO DEVICES(R), RFMD(R), Optimum Technology Matching(R), Enabling Wireless ConnectivityTM, PowerStar(R), POLARISTM TOTAL RADIOTM and UltimateBlueTM are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. (c)2012, RF Micro Devices, Inc. DS120406 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com. 1 of 14 RF3931 Absolute Maximum Ratings Parameter Rating Unit Drain Voltage (VD) 150 V Gate Voltage (VG) -8 to +2 V Gate Current 23 mA Operational Voltage 65 V Ruggedness (VSWR) 10:1 Storage Temperature Range -55 to +125 C Operating Temperature Range (TL) -40 to +85 C 200 C Operating Junction Temperature (TJ) Human Body Model Class 1A MTTF (TJ < 200C, 95% Confidence Limits)* 3 x 106 hours 3.6 C/W Thermal Resistance, RTH(junction to case) measured at TC = 85C, DC bias only Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric materials and red phosphorus as a flame retardant, and <2% antimony in solder. *MTTF - median time to failure for wear-out failure mode (30%ldss degradation) which is determined by the technology reliability. Refer to product qualification report for FIT (random) Failure rate. Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page two. Bias Conditions should also satisfy the following expression: PDISS < (TJ - TC) / RTH J-C and TC = TCASE Specification Min. Typ. Max. Parameter Unit Condition Recommended Operating Conditions Drain Voltage (VDSQ) 28 Gate Voltage (VGSQ) -5 Drain Bias Current -3 48 V -2.5 V 3500 MHz 130 Frequency of Operation DC mA Capacitance CRSS 4 pF VG = -8V, VD = 0V CISS 17 pF VG = -8V, VD = 0V COSS 12 pF VG = -8V, VD = 0V 2 mA VG = -8V, VD = 0V 2.5 mA VG = -8V, VD = 48V DC Function Test IG (OFF) - Gate Leakage ID (OFF) - Drain Leakage VGS (TH) - Threshold Voltage -4.2 V VDS (ON) - Drain Voltage at high current 0.25 V RF Function Test Gain 10 Drain efficiency 55 2 of 14 VG = 0V, ID = 1.5A [1],[2] VGS (Q) Input Return Loss VG = -8V, ID = 6.6mA -3.5 V 12 dB CW, POUT = 45.8dBm, f = 2140MHz % CW, POUT = 45.8dBm, f = 2140MHz dB CW, POUT = 45.8dBm, f = 2140MHz 60 -12 -10 VD = 48V, ID = 130mA 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com. DS120406 RF3931 Specification Min. Typ. Max. Unit Small Signal Gain 20 dB Small Signal Gain 14 dB CW, f = 2140MHz Output Power at P3dB 47 dBm CW, f = 900MHz Output Power at P3dB CW, f = 2140MHz Parameter RF Typical Performance Condition [1],[2] CW, f = 900MHz 46.5 dBm Drain Efficiency at P3dB 65 % CW, f = 900MHz Drain Efficiency at P3dB 65 % CW, f = 2140MHz [1] Test Conditions: CW Operation, VDSQ = 48V, IDQ = 130mA, T = 25C [2] Performance in a standard tuned test fixture DS120406 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com. 3 of 14 RF3931 Typical Performance in standard 2.14GHz fixed tuned test fixture (CW, T = 25C, unless noted) Small Signal Performance vs. Frequency, Pout = 30dBm (Vd = 48V, Idq = 130mA) 16 -5 Fixed tuned test circuit -7 14 -9 13 -11 12 -13 11 -15 10 -17 9 -19 8 Gain -21 IRL 7 -23 6 2080 2110 2140 Frequency (MHz) (CW, Vd = 48V, Idq = 130mA) (CW, Vd = 48V, Idq = 130mA) -9 -11 11 -13 10 -15 9 -17 8 -19 7 -21 IRL 6 58 Drain Efficiency (%) 13 4 of 14 Fixed tuned test circuit -7 Input Return Loss (dB) Gain (dB) Fixed tuned test circuit 12 5 2080 60 -5 Gain -25 2200 2170 Drain Efficiency vs. Frequency, Pout = 46dBm Gain/IRL vs. Frequency, Pout = 46dBm 15 14 Input Return Loss (dB) Gain (dB) 15 56 54 Eff 52 -23 2100 2120 2140 2160 Frequency (MHz) 2180 -25 2200 50 2080 2100 2120 2140 2160 Frequency (MHz) 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com. 2180 2200 DS120406 RF3931 Gain/ Efficiency vs. Pout, f = 2140MHz Gain/ Efficiency vs. Pout, f = 2140MHz 70 14 60 14 60 12 50 12 50 10 40 10 40 8 30 8 30 6 Drain Eff 2 29 31 33 35 37 39 41 Pout, Output Power (dBm) 43 6 Gain 20 10 4 Drain Eff 10 0 2 20 Gain 4 Gain (dB) 16 45 47 0 30 32 34 36 38 40 Pout, Output Power (dBm) IMD3 vs. Pout 42 44 46 Gain vs. Pout (2-Tone 1MHz Seperaon, Vd = 48V, Idq varied, fc = 2140MHz) (2-Tone 1MHz Seperaon, Vd = 48V, Idq varied, fc = 2140MHz) -10 18 65mA -15 17 100mA -20 130mA -25 390mA 16 260mA 15 Gain (dB) IMD3, Intermodulaon Distoron (dBc) Drain Efficiency (%) (Pulsed 10% duty cycle, 10uS, Vd = 48V, Idq = 130mA) 70 Drain Efficiency (%) Gain (dB) (CW, Vd = 48V, Idq = 130mA) 16 -30 -35 14 13 65mA 100mA 12 130mA -40 -45 260mA 11 390mA -50 1 10 100 10 1 Pout, Output Power (W-PEP) 10 100 Pout, Output Power (W-PEP) IMD vs. Output Power (Vd = 48V, Idq = 130mA, f1 = 2139.5MHz, f2 = 2140.5MHz) Intermodulaon Distoron (IMD - dBc) 0 -10 -IMD3 IMD3 -IMD5 IMD5 -IMD7 IMD7 -20 -30 -40 -50 -60 -70 1 DS120406 10 Pout, Output Power (W- PEP) 100 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com. 5 of 14 RF3931 Typical Performance in standard 900MHz fixed tuned test fixture (CW, T = 25C, unless noted) Gain/IRL vs. Frequency, Pout = 47dBm Small Signal Performance vs. Frequency, Pout = 30dBm (CW, Vd = 48V, Idq = 130mA) (Vd = 48V, Idq = 130mA) -1 21 20 -2 20 -2 19 -3 19 -3 18 -4 18 -4 17 -5 17 -5 -6 15 Gain -7 IRL 16 14 -8 13 -9 13 12 -10 12 890 900 Frequency (MHz) 910 -6 15 14 880 Gain -7 IRL -8 -9 -10 880 920 890 900 Frequency (MHz) 910 920 Gain/ Efficiency vs. Pout, f = 900MHz Drain Efficiency vs. Frequency, Pout = 47dBm (CW, Vd = 48V, Idq = 130mA) (CW, Vd = 48V, Idq = 130mA) 70 Fixed tuned test circuit 68 22 70 21 60 20 50 19 66 Gain (dB) Drain Efficiency (%) -1 64 40 18 30 17 Eff 16 20 Gain 62 Drain Eff 15 10 14 60 880 6 of 14 890 900 Frequency (MHz) 910 920 Drain Efficiency (%) Gain (dB) 16 0 Fixed tuned test circuit Input Return Loss (dB) Fixed tuned test circuit 21 Gain (dB) 22 Input Return Loss (dB) 0 22 0 29 31 33 35 37 39 41 Pout, Output Power (dBm) 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com. 43 45 47 DS120406 RF3931 IMD3 vs. Pout Gain vs. Pout (2-Tone 1MHz Seperaon, Vd = 48V, Idq varied, fc = 900MHz) (2-Tone 1MHz Seperaon, Vd = 48V, Idq varied, fc = 900MHz) 22 65mA -15 21 100mA 130mA -20 20 260mA 390mA -25 Gain (dB) IMD3, Intermodulaon Distoron (dBc) -10 -30 -35 19 18 65mA -40 17 -45 16 100mA 130mA 260mA 390mA -50 1 10 15 100 1 Pout, Output Power (W-PEP) 10 100 Pout, Output Power (W-PEP) IMD vs. Output Power (Vd = 48V, Idq = 130mA, f1 = 899.5MHz, f2 = 900.5MHz) 0 Intermodulaon Distoron (IMD - dBc) -IMD3 -10 IMD3 -IMD5 IMD5 -IMD7 IMD7 -20 -30 -40 -50 -60 1 DS120406 10 Pout, Output Power (W- PEP) 100 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com. 7 of 14 RF3931 Package Drawing (Package Style: Flanged Ceramic) 8 of 14 Pin Function Description 1 2 3 Gate Drain Source Gate - VG RF Input Drain - VD RF Output Source - Ground Base 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com. DS120406 RF3931 Bias Instruction for RF3931 Evaluation Board ESD Sensitive Material. Please use proper ESD precautions when handling devices of evaluation board. Evaluation board requires additional external fan cooling. Connect all supplies before powering up the evaluation board. 1. Connect RF cables at RFIN and RFOUT. 2. Connect ground to the ground supply terminal, and ensure that both the VG and VD grounds are also connected to this ground terminal. 3. Apply -8V to VG. 4. Apply 48V to VD. 5. Increase VG until drain current reaches 130mA desired bias point. 6. Turn on the RF input. DS120406 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com. 9 of 14 RF3931 2.14GHz Evaluation Board Schematic 9*$7( 9'5$,1 & & & & & & & & & 5 & - 5),1 VWULS 5) & & & VWULS - 5)287 & & 2.14GHz Evaluation Board Bill of Materials Component 10 of 14 Value Manufacturer Part Number C1, C2, C10, C11 33pF ATC ATC800A330JT C3,C14 0.1F Murata GRM32NR72A104KA01L C4,C13 4.7F Murata GRM55ER72A475KA01L C5 100F Panasonic ECE-V1HA101UP C6 2.2pF ATC ATC800A2R2BT C7 0.7pF ATC ATC800A0R7BT C8 1.0pF ATC ATC800A1R0BT C9 3.3pF ATC ATC800A3R3BT C12 100F Panasonic EEV-TG2A101M C15 10pF ATC ATC800A100JT R1 10 Panasonic ERJ-8GEYJ100V C16, C17, C18, C19 Not used - - PCB RO4350, 0.030" thick dielectric Rogers - 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com. DS120406 RF3931 2.14GHz Evaluation Board Layout Device Impedances Frequency (MHz) Z Source () Z Load ( 2110 2.6 - j3.1 6.5 + j5.8 2140 2.5 - j2.8 6.7 + j6.6 2170 2.4 - j2.5 7.0 + j7.4 Note: Device impedances reported are the measured evaluation board impedances chosen for a trade off of efficiency, peak power, and linearity performance across the entire frequency bandwidth. DS120406 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com. 11 of 14 RF3931 900MHz Evaluation Board Schematic VGATE VDRAIN C5 C4 C3 C11 C1 50 strip RF3931 + C2 C7 + C13 C12 C10 R1 J1 RF IN C14 50 C8 strip J2 RF OUT C9 C6 900MHz Evaluation Board Bill of Materials Component 12 of 14 Value Manufacturer Part Number C1, C2, C10, C11 68pF ATC ATC800B680JT C3,C14 0.1F Murata GRM32NR72A104KA01L C4,C13 4.7F Murata GRM55ER72A475KA01L C5 100F Panasonic ECE-V1HA101UP C6 12pF ATC ATC800B120 C7 5.6pF ATC ATC800B5R6 C8 6.8pF ATC ATC800B6R8 C9 2.0pF ATC ATC800B2R0 C12 330F Panasonic EEU-FC2A331 R1 10 Panasonic ERJ-8GEYJ100V 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com. DS120406 RF3931 900MHz Evaluation Board Layout Device Impedances Frequency (MHz) Z Source () Z Load ( 880 4.2 + j9.0 12.9 + j14.2 900 4.3 + j10.0 13.6 + j15.1 920 4.4 + j11.3 14.4 + j16.0 Note: Device impedances reported are the measured evaluation board impedances chosen for a trade off of efficiency, peak power, and linearity performance across the entire frequency bandwidth. Loadpull contours available on RFMD website. DS120406 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com. 13 of 14 RF3931 Device Handling/Environmental Conditions GaN HEMT devices are ESD sensitive materials. Please use proper ESD precautions when handling devices or evaluation boards. GaN HEMT Capacitances The physical structure of the GaN HEMT results in three terminal capacitors similar to other FET technologies. These capacitances exist across all three terminals of the device. The physical manufactured characteristics of the device determine the value of the CDS (drain to source), CGS (gate to source) and CGD (gate to drain). These capacitances change value as the terminal voltages are varied. RFMD presents the three terminal capacitances measured with the gate pinched off (VGS = -8V) and zero volts applied to the drain. During the measurement process, the parasitic capacitances of the package that holds the amplifier is removed through a calibration step. Any internal matching is included in the terminal capacitance measurements. The capacitance values presented in the typical characteristics table of the device represent the measured input (CISS), output (COSS), and reverse (CRSS) capacitance at the stated bias voltages. The relationship to three terminal capacitances is as follows: CISS = CGD + CGS COSS = CGD + CDS CRSS = CGD DC Bias The GaN HEMT device is a depletion mode high electron mobility transistor (HEMT). At zero volts VGS the drain of the device is saturated and uncontrolled drain current will destroy the transistor. The gate voltage must be taken to a potential lower than the source voltage to pinch off the device prior to applying the drain voltage, taking care not to exceed the gate voltage maximum limits. RFMD recommends applying VGS = -5V before applying any VDS. RF Power transistor performance capabilities are determined by the applied quiescent drain current. This drain current can be adjusted to trade off power, linearity, and efficiency characteristics of the device. The recommended quiescent drain current (IDQ) shown in the RF typical performance table is chosen to best represent the operational characteristics for this device, considering manufacturing variations and expected performance. The user may choose alternate conditions for biasing this device based on performance trade off. Mounting and Thermal Considerations The thermal resistance provided as RTH (junction to case) represents only the packaged device thermal characteristics. This is measured using IR microscopy capturing the device under test temperature at the hottest spot of the die. At the same time, the package temperature is measured using a thermocouple touching the backside of the die embedded in the device heatsink but sized to prevent the measurement system from impacting the results. Knowing the dissipated power at the time of the measurement, the thermal resistance is calculated. In order to achieve the advertised MTTF, proper heat removal must be considered to maintain the junction at or below the maximum of 200C. Proper thermal design includes consideration of ambient temperature and the thermal resistance from ambient to the back of the package including heatsinking systems and air flow mechanisms. Incorporating the dissipated DC power, it is possible to calculate the junction temperature of the device. 14 of 14 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com. DS120406