FAIRCHILD SEMICONDUCTOR ay DEB sede74 00274749 oO i 3469674 FAIRCHILD SEMICONDUCTOR 84D 27479 Da 1N659/660/661 FDLL659/660/661 General Purpose Diodes T-O10% EAE FAIRCHILD A Schlumberger Company Ve... 1,0 V (MAX) @ 6.0 mA PACKAGES trp. ..300 ne (MAX) 1N659 DO-35 . . 1N660 DO-35 ABSOLUTE MAXIMUM RATINGS (Note 1) 4N661 DO-35 Temperatures FDLL659 LL-34 Storage Temperature Range 65C to +200C FDLL660 LL-34 Maximum Operating Junction Temperature +175C FDLL661 LL-34 Lead Temperature +260C : Power Dissipation (Notes 2) lf you need this device in the : Maximum Total Dissipation at 25C Ambient 500 mW SOT package, an electical Linear Derating Factor (from 25C) . 3.33 mW/C equivalent is available. See FDSO1200 family. Maximum Voltage and Currents 1N659 1N660 1N661 WIV Working Inverse Voltage 50 V 100 V 200 V lo Average Rectified Current 200mA 200mA 200mA IF Forward Current Steady State 6500 mA 500 mA 500 mA if(surge) Peak Forward Surge Current Pulse Width = 1.0s TOA 10OA 1.0A Pulse Width = 1.0 ps 4.0A 4.0A 4.0A ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) iN659 IN66O iN661 SYMBOL; CHARACTERISTIC UNITS | TEST CONDITIONS MIN. | MAX | MIN | MAX | MIN | MAX VE Forward Voltage 1.0 1.0 1.0 Vv | ip=6.0mA IR Reverse Current 5.0 kA | VR =50V 5.0 HA | VR = 100V 10 | vA | VR =200V 25 : vA | VR = 50V, Ta = 100C | 50 HA | Vp = 100 V, Ta = 100C 100 HA | VR = 200V, Ta = 100C BY Breakdown Voltage 60 120 240 Vv IR = 100 pA ter Reverse Recovery Time 300 300 300 os V, = 36 V, tf = 30 mA, RL = 2.0 kQ, C. = 10 pF, Recovery to 400 kQ NOTES: 1. The maximum ratings are limiting values above which life or satisfacfory performance may be impaired. 2. These are ateady atate limifs. The factory should be consulted on applications involving pulsed or tow duty cycle operations. 3. For product family characteristic curves, reter {o Chapter 4, 04 for {N659, 4, O1 for 1N660 and 1N661. SN 3-199 | | I { um Katee