2010 Fairchild Semiconductor Corporation FDMA1032CZ Rev B4 (W)
FDMA1032CZ
20V Complementary PowerTrench MOSFET
General Description
This device is designed specifically as a single package
solution for a DC/DC 'Switching' MOSFET in cellular
handset and other ultra-portable applications. It
features an independent N-Channel & P-Channel
MOSFET with low on-state resistance for minimum
conduction losses. The gate charge of each MOSFET
is also minimized to allow high frequency switching
directly from the controlling device. The MicroFET 2x2
package offers exceptional thermal performance for its
physical size and is well suited to switching applications.
Features
x Q1: N-Channel
3.7 A, 20V. RDS(ON) = 68 m: @ VGS = 4.5V
R
DS(ON) = 86 m: @ VGS = 2.5V
x Q2: P-Channel
–3.1 A, –20V. RDS(ON) = 95 m: @ VGS = –4.5V
R
DS(ON) = 141 m: @ VGS = –2.5V
xLow profile – 0.8 mm maximum – in the new package
MicroFET 2x2 mm
x RoHS Compliant
3
2
1
4
5
6
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol Parameter Q1 Q2 Units
VDS Drain-Source Voltage 20 –20 V
VGS Gate-Source Voltage r12 ±12 V
Drain Current – Continuous (Note 1a) 3.7 –3.1
ID – Pulsed 6 –6
A
Power Dissipation for Single Operation (Note 1a) 1.4
PD
(Note 1b) 0.7
W
TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 qC
Thermal Characteristics
RTJA Thermal Resistance, Junction-to-Ambient (Note 1a) 86 (Single Operation)
RTJA Thermal Resistance, Junction-to-Ambient (Note 1b) 173 (Single Operation)
RTJA Thermal Resistance, Junction-to-Ambient (Note 1c) 69 (Dual Operation)
RTJA Thermal Resistance, Junction-to-Ambient (Note 1d) 151 (Dual Operation)
qC/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
032 FDMA1032CZ 7’’ 8mm 3000 units
FDMA1032CZ 20V Complementary PowerTrench MOSFET
MicroFET 2x2
PIN 1
S1 G1 D2
D1 G2 S2
D1 D2
S1
G1
D1
S2
G2
D2
Free from halogenated compounds and antimony
oxides
HBM ESD protection level >2kV (Note 3)
tm
May 2010
FDMA1032CZ Rev B4 (W)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Type Min Typ Max Units
Off Characteristics
BVDSS Drain-Source Breakdown
Voltage
VGS = 0 V, ID = 250 PA
VGS = 0 V, ID = –250 PA
Q1
Q2
20
–20
V
'BVDSS
'TJ
Breakdown Voltage
Temperature Coefficient
ID = 250 PA, Referenced to 25qC
ID = –250 μA, Referenced to 25qC
Q1
Q2
15
–12
mV/qC
IDSS Zero Gate Voltage Drain
Current
VDS = 16 V, VGS = 0 V
VDS = –16 V, VGS = 0 V
Q1
Q2
1
–1
PA
IGSS Gate-Body Leakage VGS = ±12 V, VDS = 0 V All ±10 PA
On Characteristics (Note 2)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 PA
VDS = VGS, ID = –250 μA
Q1
Q2
0.6
–0.6
1.0
–1.0
1.5
–1.5
V
'VGS(th)
'TJ
Gate Threshold Voltage
Temperature Coefficient
ID = 250 PA, Referenced to 25qC
ID = –250 μA, Referenced to 25qC
Q1
Q2
–4
4
mV/qC
VGS = 4.5 V, ID = 3.7 A
VGS = 2.5 V, ID = 3.3 A
VGS = 4.5 V, ID = 3.7 A, TJ = 125qC
Q1 37
50
53
68
86
90
m:
RDS(on) Static Drain-Source
On-Resistance
VGS = –4.5V, ID = –3.1 A
VGS = –2.5 V, ID = –2.5 A
VGS = –4.5 V, ID = –3.1 A,TJ = 125qC
Q2 60
88
87
95
141
140
m:
gFS Forward Transconductance VDS = 10 V, ID = 3.7 A
VDS = –10 V, ID = –3.1 A
Q1
Q2
16
–11
S
Dynamic Characteristics
Ciss Input Capacitance Q1
Q2
340
540
pF
Coss Output Capacitance Q1
Q2
80
120
pF
Crss Reverse Transfer
Capacitance
Q1
VDS = 10 V, VGS = 0 V, f = 1.0 MHz
Q2
VDS = –10 V, VGS = 0 V, f = 1.0 MHz Q1
Q2
60
100
pF
Switching Characteristics (Note 2)
td(on) Turn-On Delay Time Q1
Q2
8
13
16
24
ns
tr Turn-On Rise Time Q1
Q2
8
11
16
20
ns
td(off) Turn-Off Delay Time Q1
Q2
14
37
26
59
ns
tf Turn-Off Fall Time
Q1
VDD = 10 V, ID = 1 A,
VGS = 4.5 V, RGEN = 6 :
Q2
VDD = –10 V, ID = –1 A,
VGS = –4.5 V, RGEN = 6 :Q1
Q2
3
36
6
58
ns
Qg Total Gate Charge Q1
Q2
4
7
6
10
nC
Qgs Gate-Source Charge Q1
Q2
0.7
1.1
nC
Qgd Gate-Drain Charge
Q1
VDS = 10 V, ID = 3.7 A, VGS = 4.5 V
Q2
VDS = –10 V,ID =– 3.1 A,
VGS =– 4.5 V
Q1
Q2
1.1
2.4
nC
FDMA1032CZ 20V Complementary PowerTrench
MOSFET
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Type Min Typ Max Units
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Source-Drain Diode Forward Current Q1
Q2
1.1
–1.1
A
VSD Source-Drain Diode Forward
Voltage
VGS = 0 V, IS = 1.1 A (Note 2)
VGS = 0 V, IS = –1.1 A (Note 2)
Q1
Q2
0.7
–0.8
1.2
–1.2
V
trr Diode Reverse Recovery
Time
Q1
Q2
11
25
ns
Qrr Diode Reverse Recovery
Charge
Q1
IF = 3.7 A, dIF/dt = 100 A/μs
Q2
IF = –3.1 A, dIF/dt = 100 A/μs
Q1
Q2
2
9
nC
Notes:
1. RTJA is determined with the device mounted on a 1 in2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. RTJC is guaranteed by design while RTJA is determined by the
user's board design.
(a) RTJA = 86 °C/W when mounted on a 1 in2 pad of 2 oz copper, 1.5 " x 1.5 " x 0.062 " thick PCB. For single operation.
(b) RTJA = 173 °C/W when mounted on a minimum pad of 2 oz copper. For single operation.
(c) RTJA = 69 oC/W when mounted on a 1 in2pad of 2 oz copper, 1.5 ” x 1.5 ” x 0.062 ” thick PCB. For dual operation.
(d) RTJA = 151 oC/W when mounted on a minimum pad of 2 oz copper. For dual operation.
2. Pulse Test : Pulse Width < 300 us, Duty Cycle < 2.0%
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
a)86 oC/W when
mounted on a 1
in2pad of 2 oz
copper.
b)173 oC/W when
mounted on a
minimum pad of 2
oz copper.
c)69 oC/W when
mounted on a 1 in2
pad of 2 oz copper.
d)151 oC/W when
mounted on a
minimum pad of 2 oz
copper.
FDMA1032CZ 20V Complementary PowerTrench MOSFET
FDMA1032CZ Rev B4 (W)
FDMA1032CZ Rev B4 (W)
Typical Characteristics Q1 (N-Channel)
0
1
2
3
4
5
6
0 0.2 0.4 0.6 0.8 1 1.2
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
2.5V 2.0V
V
GS
= 4.5V
3.0V
3.5V
1.5V
0.8
1
1.2
1.4
1.6
1.8
2
0123456
I
D
, DRAIN CURRENT (A)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
V
GS
= 2.0V
2.5V
3.5V
4.5V
3.0V
4.0V
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
1.6
-50 -25 0 25 50 75 100 125 150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
I
D
= 3.7A
V
GS
= 4.5V
0.03
0.05
0.07
0.09
0.11
0.13
0246810
V
GS
, GATE TO SOURCE VOLTAGE (V)
R
DS(ON)
, ON-RESISTANCE (OHM)
I
D
= 1.85A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
1
2
3
4
5
6
0.511.522.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
T
A
= 125
o
C
25
o
C
-55
o
C
V
DS
= 5V
0.0001
0.001
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1 1.2
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
I
S
, REVERSE DRAIN CURRENT (A)
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDMA1032CZ 20V Complementary PowerTrench
MOSFET
FDMA1032CZ Rev B4 (W)
Typical Characteristics Q1 (N-Channel)
0
2
4
6
8
10
0246810
Q
g
, GATE CHARGE (nC)
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
= 3.7A V
DS
= 5V
10V
15V
0
100
200
300
400
500
0 5 10 15 20
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
C
iss
C
rss
C
oss
f = 1MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
0.1 1 10 100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
DC
10s
1s
100ms
R
DS(ON)
LIMIT
V
GS
= 4.5V
SINGLE PULSE
R
TJA
= 173°C/W
T
A
= 25°C
10ms
1ms
100us
0
10
20
30
40
50
0.0001 0.001 0.01 0.1 1 10 100 1000
t
1
, TIME (sec)
P(pk), PEAK TRANSIENT POWER (W)
SINGLE PULSE
R
TJA
= 173°C/W
T
A
= 25°C
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power
Dissipation.
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
t
1
, TIME (sec)
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
R
TJA
(t) = r(t) * R
TJA
R
TJA
=173 °C/W
T
J
- T
A
= P * R
TJA
(t)
Duty Cycle, D = t
1
/ t
2
P(pk)
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDMA1032CZ 20V Complementary PowerTrench
MOSFET
FDMA1032CZ Rev B4 (W)
Typical Characteristics: Q2 (P-Channel)
0
1
2
3
4
5
6
0 0.4 0.8 1.2 1.6 2
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
-I
D
, DRAIN CURRENT (A)
3.0V
2.5V
3.5V
V
GS
=
45V
2.0V
1.5V
0.6
1
1.4
1.8
2.2
2.6
0123456
-I
D
, DRAIN CURRENT (A)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
V
GS
= -2.0V
-3.5V
-4.5V
-3.0V
-2.5V
-4.0V
Figure 12. On-Region Characteristics. Figure 13. On-Resistance Variation with
Drain Current and Gate Voltage.
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
-50 -25 0 25 50 75 100 125 150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
I
D
= -3.1A
V
GS
= -4.5V
0.04
0.08
0.12
0.16
0.2
0246810
-V
GS
, GATE TO SOURCE VOLTAGE (V)
R
DS(ON)
, ON-RESISTANCE (OHM)
I
D
= -1.55A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 14. On-Resistance Variation with
Temperature.
Figure 15. On-Resistance Variation with
Gate-to-Source Voltage.
0
1
2
3
4
5
6
00.511.522.5
-V
GS
, GATE TO SOURCE VOLTAGE (V)
-I
D
, DRAIN CURRENT (A)
T
A
= 125
o
C
25
o
C
-55
o
C
V
DS
= -5V
0.0001
0.001
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
-I
S
, REVERSE DRAIN CURRENT (A)
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Figure 16. Transfer Characteristics. Figure 17. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDMA1032CZ 20V Complementary PowerTrench
MOSFET
FDMA1032CZ Rev B4 (W)
Typical Characteristics: Q2 (P-Channel)
0
2
4
6
8
10
0 2 4 6 8 101214
Q
g
, GATE CHARGE (nC)
-V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
= -3.1A
V
DS
= -5V
-15V
-10V
0
200
400
600
800
1000
048121620
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
C
iss
C
rss
C
oss
f = 1MHz
V
GS
= 0 V
Figure 18. Gate Charge Characteristics. Figure 19. Capacitance Characteristics.
0.01
0.1
1
10
100
0.1 1 10 100
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
-I
D
, DRAIN CURRENT (A)
DC
10s 1s
100ms
R
DS(ON)
LIMIT
V
GS
= -4.5V
SINGLE PULSE
R
T
JA
= 173
o
C/W
T
A
= 25
o
C
10ms
1ms
100us
0
10
20
30
40
50
0.0001 0.001 0.01 0.1 1 10 100 1000
t
1
, TIME (sec)
P(pk), PEAK TRANSIENT POWER (W)
SINGLE PULSE
R
T
JA
= 173°C/W
T
A
= 25°C
Figure 20. Maximum Safe Operating Area. Figure 21. Single Pulse Maximum
Power Dissipation.
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
t
1
, TIME (sec)
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
R
TJA
(t) = r(t) * R
TJA
R
TJA
=173 °C/W
T
J
- T
A
= P * R
TJA
(t)
Duty Cycle, D = t
1
/ t
2
P(pk)
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 22. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDMA1032CZ 20V Complementary PowerTrench
MOSFET
FDMA1032CZ 20V Complementary PowerTrenchMOSFET
FDMA1032CZ Rev B4 (W)
Dimensional Outline and Pad Layout
F
FDMA1032CZ 20V Complementary PowerTrench
MOSFET
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intended to be an exhaustive list of all such trademarks.
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATI ON.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical imp lant i nto the body or (b ) support or su stain life,
and (c) whose fail ure to perform when properly used in accordan ce with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably ex pecte d to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
AccuPower™
Auto-SPM™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
DEUXPEED®
Dual Cool™
EcoSPARK®
EfficentMax™
ESBC™
Fairchild®
Fairchild Semiconductor®
FACT Quiet Series™
FACT®
FAST®
FastvCore™
FETBench™
FlashWriter® *
FPS™
F-PFS™
FRFET®
Global Power ResourceSM
Green FPS™
Green FPS™ e-Series™
Gmax™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MicroPak2™
MillerDrive™
MotionMax™
Motion-SPM™
OptiHiT™
OPTOLOGIC®
OPTOPLANAR®
®
PDP SPM™
Power-SPM™
PowerTrench®
PowerXS™
Programmable Active Droop™
QFET®
QS™
Quiet Series™
RapidConfigure™
Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
SMART START™
SPM®
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS™
SyncFET™
Sync-Lock™
®*
The Power Franchise®
®
TinyBoost™
TinyBuck™
TinyCalc™
TinyLogic®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TriFault Detect™
TRUECURRENT™*
µSerDes™
UHC®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
XS™
tm
®
tm
tm
Datasheet Identification Product Status Definition
Advance Information Formative / In Design Datashe et contains the design specifications for pro duct development. Specificat ions
may change in any manner without notice.
Preliminary First Production Datasheet contains preliminary data; supple mentary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without noti ce to improve the design.
Obsolet e Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. Th e datasheet is for reference information only.
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application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect oursel ve s and our customers from the
proliferation of counterfeit parts. Fairch ild strongly encou rages cust omers to purch ase Fairch ild parts either direct ly from Fairchild or from Authorized Fai rchild
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Rev. I48
™
FDMA1032CZ Rev B4 (W)