MJ11033 - ON Semiconductor

December, 2005 − Rev. 5 1Publication Order Number:

MJ11028/D

MJ11028, MJ11030,

MJ11032 (NPN)

MJ11029, MJ11033 (PNP)

High−Current

Complementary Silicon

Power Transistors

High−Current Complementary Silicon Power Transistors are for use

as output devices in complementary general purpose amplifier

applications.

Features

•High DC Current Gain − hFE = 1000 (Min) @ IC = 25 Adc

hFE = 400 (Min) @ IC = 50 Adc

•Curves to 100 A (Pulsed)

•Diode Protection to Rated IC

•Monolithic Construction with Built−In Base−Emitter Shunt Resistor

•Junction Temperature to +200_C

•Pb−Free Packages are Available*

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating Symbol Value Unit

Collector−Emitter Voltage MJ11028/29

MJ11030

MJ11032/33

VCEO 60

120

Vdc

Collector−Base Voltage MJ11028/29

MJ11030

MJ11032/33

VCBO 60

120

Vdc

Emitter−Base Voltage VEBO 5.0 Vdc

Collector Current − Continuous

− Peak (Note 1) IC50

100 Adc

Base Current − Continuous IB2.0 Adc

Total Power Dissipation @ TC = 25°C

Derate Above 25°C @ TC = 100_CPD300

1.71 W

W/°C

Operating and Storage Junction

Temperature Range TJ, Tstg −55 to +200 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

ÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎ

Maximum Lead Temperature for

Soldering Purposes for v 10 seconds

ÎÎÎ

ÎÎÎÎÎ

ÎÎÎ

ÎÎÎÎÎ

275

ÎÎ

Thermal Resistance, Junction−to−Case RqJC 0.58 °C/W

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

TO−204 (TO−3)

CASE 197A

STYLE 1

50 AMPERE

COMPLEMENTARY

DARLINGTON POWER

TRANSISTORS

60 − 120 VOLTS

300 WATTS

MARKING DIAGRAM

MJ110xx = Device Code

xx = 28, 29, 30, 32, 33

G = Pb−Free Package

A = Location Code

YY = Year

WW = Work Week

MEX = Country of Orgin

http://onsemi.com

MJ110xxG

AYYWW

MEX

See detailed ordering and shipping information in the package

dimensions section on page 3 of this data sheet.

ORDERING INFORMATION

MJ11028, MJ11030, MJ11032 (NPN)

http://onsemi.com

Figure 1. Darlington Circuit Schematic

BASE

EMITTER

COLLECTOR

≈3.0 k ≈25

PNP

MJ11029

MJ11033

BASE

EMITTER

COLLECTOR

≈3.0 k ≈25

NPN

MJ11028

MJ11030

MJ11032

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage (Note 1) MJ11028, MJ11029

(IC = 1 00 mAdc, IB = 0) MJ11030

MJ11032, MJ11033

V(BR)CEO 60

120

−

Vdc

Collector−Emitter Leakage Current

(VCE = 60 Vdc, RBE = 1 kW) MJ11028, MJ11029

(VCE = 90 Vdc, RBE = 1 kW) MJ11030

(VCE = 120 Vdc, RBE = 1 kW) MJ11032, MJ11033

(VCE = 60 Vdc, RBE = 1 kW, TC = 150_C) MJ11028, MJ11029

(VCE = 120 Vdc, RBE = 1 kW, TC = 150_C) MJ11032, MJ11033

ICER −

−

mAdc

Emitter Cutoff Current

(VBE = 5 Vdc, IC = 0) IEBO − 5 mAdc

Collector−Emitter Leakage Current

(VCE = 50 Vdc, IB = 0) ICEO − 2 mAdc

ON CHARACTERISTICS (Note 1)

DC Current Gain

(IC = 25 Adc, VCE = 5 Vdc)

(IC = 50 Adc, VCE = 5 Vdc)

hFE 1 k

400 18 k

−

Collector−Emitter Saturation Voltage

(IC = 25 Adc, IB = 250 mAdc)

(IC = 50 Adc, IB = 500 mAdc)

VCE(sat) −

−2.5

3.5

Vdc

Base−Emitter Saturation Voltage

(IC = 25 Adc, IB = 200 mAdc)

(IC = 50 Adc, IB = 300 mAdc)

VBE(sat) −

−3.0

4.5

Vdc

1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

MJ11028, MJ11030, MJ11032 (NPN)

http://onsemi.com

ORDERING INFORMATION

Device Package Shipping

MJ11028 TO−204

100 Units / Tray

MJ11028G TO−204

(Pb−Free)

MJ11029 TO−204

MJ11029G TO−204

(Pb−Free)

MJ11030 TO−204

MJ11030G TO−204

(Pb−Free)

MJ11032 TO−204

MJ11032G TO−204

(Pb−Free)

MJ11033 TO−204

MJ11033G TO−204

(Pb−Free)

IC, COLLECTOR CURRENT (AMP)

100

0.2

Figure 2. DC Safe Operating Area

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

0.1

0.5 1 2 5 10 20 50 200

0.5

0.2

BONDING WIRE LIMITED

THERMALLY LIMITED @ TC = 25°C

SECOND BREAKDOWN LIMITED

MJ11028, 29

MJ11032, 33

100

There are two limitations on the power−handling ability

of a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC − V CE

limits of the transistor that must be observed for reliable

operation, i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 2 is based on T J(pk) = 200_C; TC is

variable depending on conditions. At high case

temperatures, thermal limitations will reduce the power that

can be handled to values less than the limitations imposed by

second breakdown.

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS

)

IC, COLLECTOR CURRENT (AMP)

hFE, DC CURRENT GAIN

100 k

IC, COLLECTOR CURRENT (AMP)

50 k

20 k

10 k

5 k

2 k

500

Figure 3. DC Current Gain

12 510 10020 50

Figure 4. “On” Voltage

100

VCE = 5 V

TJ = 25°C

1 k

200

MJ11029, MJ11033 PNP

MJ11028, MJ11030, MJ11032 NPN

1 2 5 10 10020 50

TJ = 25°C

IC/IB = 100 VBE(sat)

80 ms

(PULSED)

MJ11029, MJ11033 PNP

MJ11028, MJ11030, MJ11032 NPN

80 ms

(PULSED)

VCE(sat)

MJ11028, MJ11030, MJ11032 (NPN)

http://onsemi.com

PACKAGE DIMENSIONS

TO−204 (TO−3)

CASE 197A−05

ISSUE K

NOTES:

1. DIMENSIONING AND TOLERANCING PER

ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A1.530 REF 38.86 REF

B0.990 1.050 25.15 26.67

C0.250 0.335 6.35 8.51

D0.057 0.063 1.45 1.60

E0.060 0.070 1.53 1.77

G0.430 BSC 10.92 BSC

H0.215 BSC 5.46 BSC

K0.440 0.480 11.18 12.19

L0.665 BSC 16.89 BSC

N0.760 0.830 19.31 21.08

Q0.151 0.165 3.84 4.19

U1.187 BSC 30.15 BSC

V0.131 0.188 3.33 4.77

−T− SEATING

PLANE

2 PLD

0.30 (0.012) Y M

0.25 (0.010) T

−Q−

−Y−

STYLE 1:

PIN 1. BASE

2. EMITTER

CASE: COLLECTOR

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Phone: 81−3−5773−3850

MJ11028/D

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