fy, SGS-THOMSON IRF820/FI-821/Fl ST MICROELECTRONICS IRF822/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE _Voss_| Ros(on | Ip | IRF820 | 500 V 3a 3A | IRFB20FI | 500V 3Q | 22A | iRF821 450V 32 3A | IRF821F1 i 450V [| 30 2.2 A | IRF822 ' 500 V 4Q 2.8A | |AF822Fi SOOV | 4 1.9 A | AVALANCHE RUGGEDNESS TECHNOLOGY a s 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100C s ISOLATED PACKAGE UL RECOGNIZED, ISOLATION TO 2000V DC TO-220 ISOWATT220 | APPLICATIONS | s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) a : \ = CHOPPER REGULATORS, CONVERTERS, INTERNAL SCHEMATIC DIAGRAM | MOTOR CONTROL, LIGHTING FOR b (2) | INDUSTRIAL AND CONSUMER Q | ENVIRONMENT 6) o | $ (3) ABSOLUTE MAXIMUM RATINGS Symbol a Parameter 7 Value - Unit IRF | 820 | 821 822 | 820FI | 821Fi | 822F) Vos |Drain-source Voltage (Vas = 0) | 500 | 450 | 500 | 500 | 450 | 500 | Vv | Vocr |Drain- gate Voltage (Res =20k2) =| 500 | 450 500 | 500 | 450 | 500 | v | Vas iGate-source Voltage / f +20 7 ~ vi | Ip _ [Drain Current (cont.) at Tc = 25 C 3, 3 | 28/22] 22] 19 | A 'b Drain Current (cont.) at Tc = 100 C 1.9 1.9 | 1.7 1.4 1.4 1.2 A lpm(e) |Drain Current (pulsed) 120, 12 | #12 12 12 12 A F Prot [Total Dissipation at Tc 5= 2 25 on 75 35 Ww ss |Derating Factor - 0.6 0.28 WC | Tog Storage Temperature a _ _ 65 t0150 7 | c T; ;Max. Operating Junction Temperature . ee 150 oe c | (*) Pulse width limited by safe operating area May 1992 1/7 223IRF 820/Fl - 821/Fl - 822/FI THERMAL DATA | 7 To-220 | ISOWATT220 | Rirj-case | Thermal Resistance Junction-case Max 1.66 3.57 C/W Rithi-amb |Thermal Resistance Junction-ambient Max 62.5 C/W Rthe-s |Thermal Resistance Case-sink Typ 0.5 C/W T [Maximum Lead Temperature For Soldering Purpose 300 C AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit lar Avalanche Current, Repetitive or Not-Repetitive 3 A (pulse width limited by Tj max, 8 < 1%) Eas Single Pulse Avalanche Energy 225 T mJ: (starting Tj = 25 C, Ip = lar, Vop = 25 V) | Ear Repetitive Avalanche Energy 6 mJ ____. .-_|(Pulse width limited by Tjmax,3< 1%) 0 _ lan Avalanche Current, Repetitive or Not-Repetitiv 1.9 A (Te = 100 C, pulse width limited by Tj max, 6 < 1%) ELECTRICAL CHARACTERISTICS (Tease = 25 C unless otherwise specified) OFF ; Symbol | Parameter Test Conditions Min. | Typ. | Max. | Unit Viaryoss | Drain-source Ip=250 nA Ves =0 i Breakdown Voltage tor IRF820/822/820F1/822F1 500 Vv __|for IRF821/821FI 450 | ov loss Zero Gate Voltage Vos = Max Rating 250 HA Drain Current (Vas = 0) |Vps = Max Rating x 0.8 T, = 125 C 1000 uA lass Gate-body Leakage Ves=+20V +100 rA Current (Vps=0) | ON (*) Symbol Parameter Test Conditions Min. | Typ. | Max. | Unit _Vasithy / Gate Threshold Voltage |Vps = Ves Ip = 250 WA 2 4 Vv Roston) |Static Drain-source On |Vgg=10V 'p=1.4A Resistance for IRF820/821/820F1/821FI 3 Q _ for IRF822/822FI 4 Q Ib(on) ~~ | On State Drain Current |Vos > lpjon) X Rosionjmax Vas = 10 V | for IRF820/821/820FI/821FI 3 A for IRF822/822FI 2.8 7 A DYNAMIC , Symbol Parameter Test Conditions Min. | Typ. | Max. | Unit Os (*) Forward Vos > Ipiony X Ros(enymax Ip=1.4A 0.8 Ss Transconductance Ciss input Capacitance Vos =25V f=1MHz Ves=0 500 pF Coss Output Capacitance i 100 pF Crss Reverse Transfer | 50 pF Le Capacitance _ ee Gi SGS-THOMSON ys Scs-THomsowELECTRICAL CHARACTERISTICS (continued) SWITCHING RESISTIVE LOAD IR 820/"! - 821/FI - 822/FI Symbol Parameter Test Conditions Min. | Typ. | Max. | Unit taton) Turn-on Time Von =175V Ip=1.5A 75 ns tr Rise Time Re = 509 Ves =10V 62 ns tavoft) Turn-off Delay Time (see test circuit) 170 ns tt Fall Time 75 ns Qg Total Gate Charge Ip=2.8A Ves=10V 27 35 | nc | : Vop = Max Rating x 0.8 | | __|(see test circuit) | SOURCE DRAIN DIODE Symbol Parameter Test Conditions Min Typ. Max. | Unit (sp Source-drain Current 3 A Ispm(*) |Source-drain Current 12 A (pulsed) ; _ Vsp (*) | Forward On Valtage Isp =3A Vas =0 1.6 Vv tre Reverse Recovery Isp = 3A di/dt = 100 A/us 450 ns Time Von = 100 V Tj) = 150C | Qn Reverse Recovery 3.6 uc Charge (+) Pulsed: Pulse duration = 300 ys, duty cycle 1.5 % (*} Pulse width limited by safe operating area Safe Operating Area for TO-220 Ip{A 10 1RFB20/11 | eS a 19 s, IRF822 107) IRFB21 107 10 10 10? 105 IRF820/2 Vos (V) Ay SScniomanes Safe Operating Area for ISOWATT220 Ip(A IRFB20FI/4F s sy J Ss 107 10 RFB22 IRFB21 10? 105 Ops ims 10ms 100ms 1s IRFB20/2 Vos (V) 3/7 225IRF 820/F\ - 821/Fl - 822/FI Thermal Impedance for TO-220 Zin = k Rinve =tp/t SINGLE PULSE er 7. Derating Curve for TO-220 Piat (W) 60 40 20 9 0 100 Tease (C) Output Characteristics GC34000 wv Veg =10V SV 4.5V Q 4 8 12 16 V,. (Vv) a Si SGS-THOMSON MICROELECTRONICS Thermal Impedance for |ISOWATT220 0.05 0.02 0.01 Zin = K Rinse SINGLE PULSE 6 > t/t le] T 107! 10 +, (s) 1073 1074 107% 107 Derating Curve for ISOWATT220 Piot (W) 30 20 Tease (C) Output Characteristics GC34010 tol) OVI Veg =7V 4 0 50 100 150 200 Vy. {)Transter Characteristics ip(A) ps >Ip(onyRas(onjmex 1, =125C 0 2 4 6 B VG5 V) Static Drain-source On Resistance Rosten) 6634040 (9) 0 4 8 {2 1,(A} Gate Charge vs Gate-source Voltage Ves (V) 10 Vos ~400V Ip =2.8A 0 3 10 15 20 25 Qg(nC) - bir SGS-THOMSON IRF 820/F1 - 821/Fl - 822/Fl Transconductance IS 25C tho ~)=125C Vs >!pconRosionjmax ofA) Maximum Drain Current vs Temperature 6C22900 Ip (A) 3.0 2.9 IRFB20/821 2.0 Oo 50 100 Te CC) Capacitance Variations 6C34060 C(pF) Tease =25 C f= 1MHz Ves =OV 800 600 200 0 10 20 30 40 Voe (V) S/7 MICROELECTRONICS 227IRF 820/Fl - 821/Fl - 822/FI Normalized Breakdown Voltage vs Temperature Normalized On Resistance vs Temperature Vier)yoss gc34070 Poston) 63.4080 (narm) (norm) 1.15 22 1.B 1.05 0.95 Vgs OV 0.85 Ip = 250UA 0.6 0.75 0.2 -40 a 40 80 120 T, (c) Source-drain Diode Forward Characteristics | sp (A) 10 10 0 1 2 3 4 Yep () Unclamped Inductive Load Test Circuit Unclamped Inductive Waveforms Vv L (BR)DSS Vo o4 2200 3.3 o-_| BP uF \ j os ais CL DB = o-__1 scas970 6/7 20a ki SCS-THOMSONIRF 820/Fl - 821/Fl - 822/Ft Switching Time Test Circuit Gate Charge Test Circuit 12V 1 g=CONST Vi =20V=Veuax Ve a scos99a VT is SGS-THOMSON IF monomzeracmes 229