CEM4804A
5 - 109
C, Capacitance (pF)
ID, Drain Current (A)
Ciss
Coss
Crss
2400
2000
1600
1200
800
400
00 5 10 15 20 25
-55 C
25 C
15
12
9
6
3
01 2 34
TJ=125 C
ID, Drain Current (A)
RDS(ON), Normalized
RDS(ON), On-Resistance(Ohms)
25
20
15
10
5
00 1 24
VGS=3V
VGS=4V
3
VGS=10,8,6,5V
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
VDS, Drain-to-Source Voltage (V)
Figure 3. Capacitance
TJ, Junction Temperature( C)
Figure 4. On-Resistance Variation
with Temperature
2.2
1.9
1.6
1.3
1.0
0.7
0.4
VGS=10V
ID=6.3A
-100 -50 0 50 100 150 200
VTH, Normalized
Gate-Source Threshold Voltage
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
VDS=VGS
ID=250µA
-50 -25 0 25 50 75 100 125 150
IS, Source-drain current (A)
VSD, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
0.4 0.6 0.8 1.0
100
10-1
101
1.41.2
VGS=0V
5