PHOT OMULTlPLlER TUBE
For Scintillation Counting, Ruggedized, Low Profile
25mm (1 Inch) Diameter, Bialkali Photocathode, 10-stage, Head-On Type
GENERAL
MAXIMUM RATINGS (Absolute Maximum Values)
Parameter
Parameter Value
Description/Value Unit
Spectral Response 160 to 650 nm
Wavelength of Maximum Response 420 nm
Photocathode MateriaI
MateriaI
Bialkali
Shape
Structure
Number of Stages
Minimum Effective Area 21 mm dia.
Window Material Synthetic Silica
Dynode
SuitabIe Socket
Supply Voltage Between Anode and Cathode
Between Anode and Last Dynode 1250
Ambient Temperature -80 to +50
250
Unit
Vdc
Vdc
Average Anode Current 0.1 mA
Plano-concave
Circular-cage
10
E678 14C (supplied)
R7378
CHARACTERISTlCS (at 25 )
Parameter Max.Typ.Min.
Cathode
Sensitivity
Gain
Anode Dark Current (after 30min. storage in darkness)
Radiant at 420nm
Blue (CS 5-58 filter)
Quantum Efficiency at 390nm
A/W
Anode Pulse Rise Time 2.0 ns
nA
Transit Time Spread(FWHM)
Electron Transit Time
90
85
10.5
26
100
60
9.0
20
Time Response
Electrodes KDy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 Dy10 P
Ratio 13111111111
SuppIy Voltage : 1000Vdc, K : Cathode, Dy : Dynode, P : Anode
Anode
Sensitivity
19
1.1
320
Unit
µA/W
A/lm
%
µA/lm-b
µA/lm
VOLTAGE DlSTRlBUTlON RATlO AND SUPPLY VOLTAGE
ENVIRONMENTAL TESTING
Shock.....................................100g,s, 11± 1ms, 3 impact shocks per direction(6 directions)
Vibration..........................20g,s, 50 to 2000Hz, 1oct per minute, 3 sweeps per axis (3 axes)
ns
ns
1.1 106
9.4 104
Luminous(2856K)
Radiant at 420nm
Luminous(2856K)
lnformation furnished by HA M A M ATSU is believed to be reliabIe. However, n o responsibility is assumed for possibIe inaccuracies or commission. Specifications are
subjected to change without notice. No patent right are granted to any of the circuits described herein. © 1998 Hamamatsu Photonics K.K.
Subject to local technical requirements and reg ulations, availability of products included in this promotional material may var y. P lease consult with our sales office.
NOTE
: Anode characteristics are measured with the voltage distribution ratio shown below.
7
2.5
26
11.6
30
35
44
19.1
9
25
2- 3.5
1
2
3
4
5678910
11
12
13
14
K
DY1
DY6
DY5
DY7
DY9 PIC
IC
DY10
DY8
DY3
DY4
DY2
SHORT PIN
25.4±0.5
21MIN.
13MAX. 43.0 ± 1.5
FACEPLATE
PHOTOCATHODE
14 PIN BASE
500 600 700 800 1000 1200 1400
SUPPLY VOLTAGE (V)
ANODE DARK CURRENT
ANODE DARK CURRENT (A)
10–11
10–6
10–7
10–8
10–9
10–10
GAIN
102
107
106
105
104
103
GAIN
200 800600400
0.01
0.1
1
10
100
WAVELENGTH (nm)
CATHODE RADIANT SENSITIVITY (mA/W)
QUANTUM EFFICIENCY (%)
CATHODE
RADIANT
SENSITIVITY
QUANTUM
EFFICIENCY
TPMHB0464EA
HAMAMATSU PHOTONICS K.K., Electoron Tube Center
314-5, Shimokanzo, Toyooka-village, Iwata-gun, Shizuoka-ken, 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205
U.S.A.:
Hamamatsu Corporation: 360 Foothill Road, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218
Germany:
Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658
France:
Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10
United Kingdom:
Hamamatsu Photonics UK Limted: Lough Point, 2 Gladbeck Way, Windmill Hill, Enfield, Middlesex EN2 7JA, United Kingdom, Telephone: (44)181-367-3560, Fax: (44)181-367-6384
North Europe:
Hamamatsu Photonics Norden AB: Färögatan 7, S-164-40 Kista Sweden, Telephone: (46)8-703-29-50, Fax: (46)8-750-58-95
Italy:
Hamamatsu Photonics Italia: S.R.L.: Via Della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)2-935 81 733, Fax: (39)2-935 81 741
Printed in Japan (500)
TPMH1201E01
FEB. 1998 SI
PHOTOMULTlPLlER TUBE R7378
Figure 1: Typical Spectral Response Figure 2: Typical Gain and Anode Dark Current
Figure 3: Dimensional Outline and Basing Diagram (Unit : mm)
BOTTOM VIEW
(BASING DIAGRAM)
IC : Internal Connection
(Do not use)
Socket
(E678-14C)
TPMHB0465EA
TPMHA0345EA TACCA0004EA
