UGF09030 30W, 1 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for base station applications in the frequency band 800MHz to 1000MHz. Rated with a minimum output power of 30W, it is ideal for CDMA, TDMA, WCDMA, GSM, and Multi-Carrier Power Amplifiers in Class AB operation. * * * * * * ALL GOLD metal system for highest reliability Industry standard package Suggested alternative to the MRF9030 Internally matched for repeatable manufacturing High gain, high efficiency and high linearity Package Type 440161 Application Specific Performance, 870MHz GSM: 30 Watts 17.50dB EDGE: 13 Watts 17.50dB IS95 CDMA: 3.5 Watts 17.50 dB CDMA2000: TBD Watts 17.50dB Rev 1. Package Type 44 0162 UGF09030 Maximum Ratings Rating Symbol Value Unit VDSS VGSS PD 65 +15 to -.5 Tstg TJ -65 to +150 200 Volts Volts Watts W/oC o C Symbol Typical Drain to Source Voltage, Gate connected to Source Gate to Source Voltage Total Device Dissipation @ Tcase = 70oC Derate above 70oC Storage Temperature Range Operating Junction Temperature o C Thermal Characteristics Characteristic JC Thermal Resistance, Junction to Case Unit o C/W Electrical DC Characteristics (Tc=25C unless otherwise specified) Rating Drain to Source Breakdown Voltage (VGS=0, ID=1mA) Drain to Source Leakage current (VDS=26V, VGS=0) Gate to Source Leakage current (VGS=15V, VDS=0) Threshold Voltage (VDS=10V, ID=1mA) Gate Quiescent Voltage (VDS=26 V, ID=350mA) Drain to Source On Voltage (VGS=10V, ID=1A) Forward Transconductance (VDS=10V, ID=5A) Symbol Min Typ Max Unit BVDSS 65 - - Volts IDSS - - 1.0 mA IGSS - - 1.0 A VGS(th) - 3.5 - Volts VGS(Q) 3.0 4.0 6.0 Volts VDS(on) - .3 - Volts - S Max Unit Gm AC Characteristics (Tc=25C unless otherwise specified) Rating Output capacitance * (VDS= 26V, VGS=0V, f = 1MHz) Feedback capacitance * (VDS=26V, VGS=0V, f = 1MHz) Rev 1. Symbol Min Typ Coss - - pF Crss - - pF UGF09030 RF and Functional Tests (In UltraRF Broadband Fixture, Tc=25 C unless otherwise specified) Rating CW Small Signal Gain, Pout=0.1W VDD=26V, IDQ=350mA CW Power Gain, Pout = 30 W VDD=26V, IDQ=350mA CW Drain Efficiency, Pout = 30 W, f=870 MHz, VDD=26V, IDQ=350mA, Two-Tone Common-Source Amplifier Power Gain VDD=26V, IDQ=350mA, Pout = 30 W PEP f1 =870 MHz and f2=870.1 MHz Two-Tone Inter-modulation Distortion VDD=26V, IDQ=350mA, Pout = 30 W PEP f1 =870 MHz and f2=870.1 MHz Two-Tone Drain Efficiency VDD=26V, IDQ=350mA, Pout = 30 W PEP f1 =870 MHz and f2=870.1 MHz Input Return Loss VDD =26V, Pout = 30 W PEP, IDQ=350mA f1 =850 MHz and 900 MHz, Tone Spacing = 100kHz Load Mismatch Tolerance VDS=26V, IDQ= 350 mA, Pout=30W, f=900 MHz Symbol Min Typ Max Unit GL - 17.5 - dB GP - 17 - dB D - 45 - % GTT - 17.5 - dB IMD - -36 - dBc D2 - 36 - % IRL - 10 - dB VSWR 10:1 - - CAUTION - MOS Devices are susceptible to damage from ElectroStatic Discharge (ESD). Appropriate precautions in handling, packaging and testing MOS devices must be observed. Rev 1. UGF09030 Power Gain & Efficiency vs Output Power 19 GPE Power Gain (dB) 17 40 16 30 15 20 VDD=26v IDQ=350mA f=870MHz 14 Efficiency (%) 50 18 10 13 12 0 36.7 38.55 40.68 42.77 POUT, Output Power (dBm) 44.54 46.27 Intermodulation Distortion vs Output Power 39 40 40 41 41 42 42 -20.0 -30.0 -40.0 -50.0 -60.0 IMD3,3rd Order intermodulation Distortion (dBc) -10.0 39 POUT Outut Power (dBm) PEP Rev 1. UGF09030