UGF09030
30W, 1 GHz, 26V Broadband RF Power N-Channel
Enhancement-Mode Lateral MOSFET
Designed for base station applications in the frequency band 800MHz to 1000MHz. Rated with a
minimum output power of 30W, it is ideal for CDMA, TDMA, WCDMA, GSM, and Multi-Carrier
Power Amplifiers in Class AB operation.
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ALL GOLD metal system for highest reliability
Industry standard package
Suggested alternative to the MRF9030
Internally matched for repeatable manufacturing
High gain, high efficiency and high linearity
Application Specific Performance, 870MHz
GSM: 30 Watts 17.50dB
EDGE: 13 Watts 17.50dB
IS95 CDMA: 3.5 Watts 17.50 dB
CDMA2000: TBD Watts 17.50dB
Package Type 440161
Package Type 44 0162
Rev 1. UGF09030
Maximum Ratings
Rating Symbol Value Unit
Drain to Source Voltage, Gate connected to Source VDSS 65 Volts
Gate to Source Voltage VGSS +15 to –.5 Volts
Total Device Dissipation @ Tcase = 70oC
Derate above 70oC
PD Watts
W/oC
Storage Temperature Range Tstg -65 to
+150
oC
Operating Junction Temperature TJ 200
oC
Thermal Characteristics
Characteristic Symbol Typical Unit
Thermal Resistance, Junction to Case ΘJC oC/W
Electrical DC Characteristics (Tc=25C unless otherwise specified)
Rating Symbol Min Typ Max Unit
Drain to Source Breakdown Voltage
(VGS=0, ID=1mA)
BVDSS 65 - - Volts
Drain to Source Leakage current
(VDS=26V, VGS=0)
IDSS - - 1.0 mA
Gate to Source Leakage current
(VGS=15V, VDS=0)
IGSS - - 1.0
µA
Threshold Voltage
(VDS=10V, ID=1mA)
VGS(th) - 3.5 - Volts
Gate Quiescent Voltage
(VDS=26 V, ID=350mA)
VGS(Q) 3.0 4.0 6.0 Volts
Drain to Source On Voltage
(VGS=10V, ID=1A)
VDS(on) - .3 - Volts
Forward Transconductance
(VDS=10V, ID=5A)
Gm
- S
AC Characteristics (Tc=25C unless otherwise specified)
Rating Symbol Min Typ Max Unit
Output capacitance *
(VDS= 26V, VGS=0V, f = 1MHz)
Coss - - pF
Feedback capacitance *
(VDS=26V, VGS=0V, f = 1MHz)
Crss - - pF
Rev 1. UGF09030
RF and Functional Tests (In UltraRF Broadband Fixture, Tc=25
°
C unless otherwise specified)
Rating Symbol Min Typ Max Unit
CW Small Signal Gain, Pout=0.1W
VDD=26V, IDQ=350mA
GL - 17.5 - dB
CW Power Gain, Pout = 30 W
VDD=26V, IDQ=350mA
GP - 17 - dB
CW Drain Efficiency, Pout = 30 W,
f=870 MHz, VDD=26V, IDQ=350mA, ηD - 45 - %
Two-Tone Common-Source Amplifier Power Gain
VDD=26V, IDQ=350mA, Pout = 30 W PEP
f1 =870 MHz and f2=870.1 MHz
GTT - 17.5 - dB
Two-Tone Inter-modulation Distortion
VDD=26V, IDQ=350mA, Pout = 30 W PEP
f1 =870 MHz and f2=870.1 MHz
IMD - -36 - dBc
Two-Tone Drain Efficiency
VDD=26V, IDQ=350mA, Pout = 30 W PEP
f1 =870 MHz and f2=870.1 MHz
ηD2Τ - 36 - %
Input Return Loss
VDD =26V, Pout = 30 W PEP, IDQ=350mA
f1 =850 MHz and 900 MHz, Tone Spacing =
100kHz
IRL - 10 - dB
Load Mismatch Tolerance
VDS=26V, IDQ= 350 mA, Pout=30W, f=900 MHz
VSWR 10:1 - -
CAUTION - MOS Devices are susceptible to damage from ElectroStatic Discharge (ESD). Appropriate
precautions in handling, packaging and testing MOS devices must be observed.
Rev 1. UGF09030
Power Gain & Efficiency vs Output Power
12
13
14
15
16
17
18
19
36.7 38.55 40.68 42.77 44.54 46.27
POUT, Output Power (dBm)
GPE Power Gain (dB)
0
10
20
30
40
50
VDD=26v
IDQ=350mA
f=870MHz
Efficiency (%)
Intermodulation Distortion vs Output Power
-60.0
-50.0
-40.0
-30.0
-20.0
-10.0
4242414140403939
POUT Outut Power (dBm) PEP
IMD3,3rd Order intermodulation Distortion (dBc)
Rev 1. UGF09030
