MIL SPECS 1cff cooo125 goo1isi tT 7- Of-17 NOTICE INCH-POUND OF VALIDATION MIL-S~19500/162B NOTICE 1 26 August 1988 MILITARY SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER TYPES 1N1614, 1N1615, 1N1616, 1N4458, 1N4459, 1N1614R, 1N1615R, 1N1616R, 1N4458R, 1N4459R Military specification MIL-S~19500/162B, dated 27 July 1964, with Amendment 4, dated 29 July 1974, has been reviewed and determined to be valid for use in acquisition. Custodians: Preparing activity: Army - ER Army - ER Navy - EC Air Force - 17 Agent: DLA - ES Review activities: Army - AR, MI Air Force - 11, 19, 99 DLA - ES NASA - NA User activities: Army - SM Navy - AS, OS. MC, CG, SH AMSC N/A FSC 5961 DISTRIBUTION STATEMENT A: : Approved for public release; distribution is unlimited. 1 of 1MIL SPECS rc ooo0125 oopiase 1 7-CU-17 MIL~S-19500/162B AMENDMENT A, 29 July 197 SUPERSEDING AMENDMENT 3 4 November 1966 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER TYPES 1N1614, 1N1615, 1Ni616, 1N4458, 1N4459, IN1614R, 1N1615R, 1N1616R, IN4458R, 1N4459R This amendment forms a part of Military Specification MIL-S-19500/162B, dated 27 July 1964, and is approved for use by all Departments and Agencies of the Department of Defense. Page 1 1.3, i, (surge) colum: Delete "150" and substitute "100". 1.3, BAROMETRIC PRESSURE, REDUCED: Delete "8 mm Hg at Vem < 600 Vdc, 15 mm Rg at Vom > 600 Vdc" and substitute "8 mmHg - 1N1614 and 1N1615; 16 mmHg ~ 1N1616; 30 mmHg - 1N4458; 54 mmHg - 1N4459". Page 3 4.1, delete and substitute: "4.1 Sampling and inspection. Sampling and inspection shall be in accordance with MIL-S-19500, and as specified herein, except that the lot accumulation period requirements shall be 6 months in lieu of 6 weeks." *4.3, delete and substitute: "4.3 Quality conformance inspection. Quality conformance inspection shall consist of the examinations and tests specified in groups A, B, and C. Group A inspection shall be performed on a sublot basis. Group B inspection shall be performed on a lot basis per MIL-S-19500. Subgroups 7 and 8 of group B and subgroups 1, 2, and 3 of group C inspection shall be performed on a sublot basis or on the highest voltage type present in the lot. In the event subsequent lots contain higher voltage devices than have previously been accepted under group C provisions, these higher voltage devices shall be subjected to group C inspection. A failure of these higher voltage devices does not invalidate previously established group C status on lower voltage devices." *Add the following new paragraph: x "4.3.4 Group B and group C life-test samples. Samples that have been subjected to group B 340-hours life-test, may be continued on test to 1,000 hours to satisfy group C life-test requirements. These samples shall be predesignated and shall remain subjected to the group C 1,000-hour acceptance evaluation after they have passed the group B 340-hour acceptance criteria. The cumulative total of failures found during 340-hour test and during the subsequent interval up to 1,000 hours shall be computed for 1,000-hour acceptance criteria (see 4.3.3)." 4.4.1, delete and substitute: "4.4.1 Time limit for end points. End-point tests for qualification and quality-conformance inspection shall be completed within 96 hours after completion of the last test in the subgroup." Page 4 TABLE I, Subgroup 2: Delete Forward voltage" test and substitute: MIL-STD-750 Limits Examination or test Method Details LTPD Symbol | Min Max Unit Forward voltage 4011 iy = 15 a(pk); Ve _ 1.5 v(pk) t < 8.3 msec, duty cycle < 2%, pulse Fsc 5961MIL SPECS MIL~S-19500/162B AMENDMENT 4 TABLE II, Subgroup 2: Ici OO0001e5 0001153 3 a Page 4 - Continued Delete "End points" and "Forward voltage" and substitute: Exomincti MIL-STD-750 Limits xamination or test Method Details LTPD Symbol | Min Max Unit End points: (See 4.4.1) Forward voltage 4011 i, = 15 a(pk); Vs _ 1.5 v(pk) t_ < 8.3 msec, duty cycle < 2%, pulse WW Page 5 TABLE II, Subgroup 5, Surge current, Details colum: Delete "i, (surge) = 150 a and substitute "L, (surge) = 100 a. Page 6 *TABLE II, Subgroups 7, 8, and 9, delete and substitute: . MIL-STD-750 Limits Examination or test Method Details LTPD Symbo! Min Mox Unit Subgroup 7 10 High-temperature life 1032 Ty, = 200C (see 4.3.4) _ _ -- --- {nonoperating End points: (See 4.4.1) Forward voltage: 4011 i, = 15 a(pk); Ye _ 1.5 v(pk) tS < 8.3 msec, duty cycle < 2%, pulse Reverse current: 4016 IR 1N1614 VR = 200 Vde _ 100 wade 1N1615 YR = 400 Vde _ 100 pAde 1N1616 YR = 600 Vdc _ 100 pAdc 1N4458 Vp = 800 Vde _ 100 pAdc 4N4459 YR = 1,000 Vde _- 100 pAde Subgroup 8 10 Steady state operation: 1027 Ty = 150C; 1, = 5 Adc; (see 4.4.2) = 60 Hz 1N1614 View (wkE) = 200 v(pk) _ _ - 1N1615 Van (ke) = 400 v(pk) --- _ 1N1616 Vw (ke) = 600 v(pk) _ _ - 1N4458 Vau (ke) = 800 v(pk) --- --- 1N4459 Vinay (PKB) = 1,000 v(pk) _ _ _ End points: (Same as subgroup 7) Page 2 of 4MIL SPECS TC oo001e5 OoOo11s4y s Bf: (see 4.4.2) 1N1614 1N1615 181616 184458 184459 End points: (Same as subgroup 7 of group B) = 60 Hz Yau (ke) = 200 v(pk) Van wks) 400 v(pk) Vou(wks) = 600 v(pk) Vay (wk) = 800 v(pk) Van (ke) = 1,000 v(pk) MIL~S-19500/162B Page 6 - Continued AMENDMENT 4 . MIL-STD~750 Limits Examination or test Method Details LTPD Symbol Min Max Unit Subgroup 9 10 Low-temperature operation: Tt, = ~65C Forward voltage: 4011 i, = 15 a(pk); Vs _ 1.7 v(pk) tp < 8.3 msec, duty cycle < 2%, pulse Reverse current: 4016 I, 7 1N1614 YR = 200 Vde coo 100 pAdc 1N1615 YR = 400 Vdc 100 Ade 1N1616 YR = 600 Vde _ 100 pAde 1N4458 YR = 800 Vde _ 100 pAde 1N4459 VR = 1,000 Vde _- 100 pAdc *TABLE IIL, delete and substitute: TABLE III. Group C inspection. MIL-STD-750 Limits Examination or test Method Details LTPD Symbeo! Min Max Unit Subgroup 1 1/ 10 Barometric pressure, reduced 1001 8 mmlg - 1N1614 and 1N1615; _ _ _ _ (altitude operation) 16 mmHg - 1N1616; 30 mmHg - 1N4458; 54 mmHg - 1N4459; t = 60 sec Measurement during test: Reverse current: 4016 QR 1N1614 VR = 200 Vde 50 pAdc 1N1615 VR = 400 Vde _ 50 pAdc 181616 VR = 600 Vdc 50 pAdc 1N4458 VR = 800 Vde _ 50 pAdc 1N4459 YR = 1,000 Vde _ 50 pAdc Subgroup 2 A=10 High-temperature life 1031 Ty = 200C (see 4.3.4) _-- _ _- (nonoperating) End points: (Same as subgroup 7 of group B) Subgroup 3 A=10 Steady state operation: 1026 Ts) = 150C; 1, = 5 Adc; 4/ This test shall be conducted on the initial lot and thereafter every 6 months. Page 3 of 4MIL SPECS Icy O0001e5 g001155 7 a MIL-S-19500/162B AMENDMENT 4 *NOTE: The margins of this amendment are marked with an asterisk to indicate where changes from the previous amendment were made. This was done as a convenience only and the Government assumes no liability whatsoever for any inaccuracies in these notations. Bidders and contractors are cautioned to evaluate the requirements of this document based on the entire content irrespec- tive of the marginal notations and relationship to the last previous amendment. Custodians: Preparing activity: Army - EL Army - EL Navy - EC Air Force - 17 Agent: DSA - ES Review activities: Army - MU, MI Air Force ~ 11, 19, 80 NASA - NA DSA - ES (Project 5961-0506) User activities: Arny - SM Navy ~ AS, OS, MC, CG; SH EU. & GOVERNMENT PRICTING OFFICE: 1974-603-109/1103 Page 4 of 4MIL SPECS 1c o0001e5 0001156 4 a 7-Ot-U7 MIL~S-19500/142B x duly 1 SUP. ING MIL-S-19500/162A (EL) 25 January 1%3 MILITARY SPECIFICATION SEMICONDUCTOR DEVICES, DIODE. SILICON, POWER RECTIFIER JAN TYPES 1N1614, 1N1615, 1N1616, 1N4458, 1N4459, 1N1614R, 1N1615R, 1N1616R, 1N4458R, 1N4459R This specification has been approved by the Department of Defense and_is mandatory for use by the Departments of the Army, the Nayy, and the Air Force, 1. SCOPE 1.1 Seope. This specification covers the detail requirements for silicon, power rectifiers with the following ratings. 1.2 Reverse types (suffix R). Reverse and normal types are identical except: The normal types have the cathode connected to the stud; the reverse types have the anode connected to the stud. Designated values are applicable to both types. 1.3 Maximum retings. Type vy, Vay (wke) ip I ol 1, ef surge) Ty = 25C | (Tq = 150C) | (at: 1/120 sec) x wink) a Adc Ade a INIA | 240 200 15 10 5 150 1N2615 | 480 400 15 10 5 150 1N1616 | 720 600 15 10 5 150 1N4458 | 960 800 15 10 5 150 1N4459 | 1200 1000 15 10 5 150 a/ Derate at 40 mAdc/C above Tp = 25C OPERATING CASE TEMPERATURE: -65C to +150C STORAGE TEMPERATURE: ~65C to +200C BAROMETRIC PRESSURE, REDUCED; 8 mm Hg at Vpy = 600 Vde; 15 mm Hg at Vpy = 600 Vde 2. APPLICABLE DOCUMENTS 2.1 The following documents, of the issue in effect on date of invitation for bids or request for proposal, form a part of this specification to the extent specified herein, SPECIFICATIONS Military MIL-S-19500 - Semiconductor Devices, General Specification for. STANDARDS Military s MIL-STD-750 - Military Standard Test Methods for Semiconductor Devices. (Copies of specifications, standards, drawings, and publications required by suppliers in connection with specific procurement functions should be obtained from the procuring activity or as directed by the contracting officer.) FS 590MIL SPECS tcf oooo125 coos? o f MIL-S-19500/162B somal NO SM MONAO Rw om TS [ TY /' t + SI ___ m | ($+ HE=}- 4_\ ' SEE NOTE 2 SEE NOTE | el D o A on] -o || e pt /*sEATING PLANE DIMENSIONS 5 LTRL-_INCHES MILLIMETERS | f MIN MAX | MIN MAX | 5 A 405 10.29 B 424 10.77 C | 424 | .437_ (| 10.77_ {11.10 D | .075 | .175 1.90 | 4.44 E - 800 20,32 F .250 6.35 | 7 G |} .060 1.52 H | .060 1,52 J_| .422 | 453 110.72 {11.51 K ; 4,5,6 TES: Angular orientation of this terminal is undefined. Dia of unthreaded portion .189 inch (4.80 mm) max; .163 inch (4.14 mm) min. The A.S.A. thread reference is 10-32 UNF2A. Max pitch dia of plated threads shall be basic pitch dia .169 inch (4.31 mm). Unit shall not be damaged by torque of 15 in-lb applied to 10~32NF2B nut assembled on thread. Complete threads shall extend to within 2-1/2 threads of the seating plane. Terminal end shape is unrestricted. Reversed (anode to stud) units shall be marked with an R following the last digit in the type no. For marking see 3.5. Metric equivalents are shown for general information only and are based upon | inch = 25.4 mm to the nearest .01 millimeter. Figure 1. Semiconductor devices, diode, types IN1614, IN1615, IN1616, 184458, 1N4459, and the reverse types (suffix R added).MIL SPECS tcf ooo0125 oooisa 2 er MIL-S-19500/162B 3. REQUIREMENTS 3.1 General. Requirements shall be in accordance with Specification MIL-S-19500, and as specified herein, 3.2 Abbreviations and symbols, The abbreviations and symbols used herein are defined in Specification MIL-S-19500. 3.3 Design and construction, The semiconductor diodes shall be of the design, construction, and physical dimensions specified in figure 1. 3.4 Performance characteristics. Performance characteristics shall be as specified in tables I, II, and III. 3.5 Marking. The marking shall be placed on each device in accordance with MIL-S-19500. The polarity shall be indicated by graphic symbol with the arrow pointing toward the negative end for forward bias. 3.5.1 The manufacturer, at his option, my omit the following marking: Country of origin. 3.6 Salt spray (corrosion). he diode shall be examined for evidence of corrosion and legibility of marking before the specified measurements are made (see 4.4.3). 3.7 Solderability. The immersion depth shall cover the flat portion of the terminals. h, QUALITY ASSURANCE PROVISIONS hat Sampling and inspection. Sampling and inspection shall be in accordance with Specification MIL-S- 19500, and as specified herein. h.2@ Qualification inspection. Qualification inspection shall consist of the examination and tests speci- fied in tables I, II, and ITI. Qualification testing of either polarity is sufficient to obtain qualifi- cation approval of both polarities, 4.3 Quality conformance inspection. Quality conformance inspection shall consist of the examinations and tests specified in groups A, Band C. Group A inspection shall be performed on a sublot basis. Group B inspection shall be performed on a lot basis per MIL-S-19500. Subgroups 7 and 8 of group B and group C inspections shall be performed on a sublot basis or on the highest voltage type present in the lot. In the event subsequent lots contain higher voltage devices than have previously been accepted under group C provisions, these higher voltage devices shall be subjected to group C inspection. A failure of these higher voltage devices does not invalidate previously established group C status on lower voltage devices, 4.3.1 Group A inspection. Group A inspection shall consist of the examinations and tests specified in table I, ~ OCS<;7;737TS: 4.3.2 Group B inspection. Group B inspection shall consist of the examinations and tests specified in table II. 4.3.3 Group C inspection. Group C inspection shall consist of the examinations and tests specified in in table TIT. . 4,4 -Methods of examination and test, Methods of examination and test shall be as specified in tables I, II, and ITI, and as follows: 4.4.1 Pulse measurement. Pulse measurements shall be in accordance with section 4 of MIL-STD-750. 4.4.2 Steady-state operation life, This test shall be conducted with a half-sine wave of the specified peak voltage impressed across the diode in the reverse direction followed by a half-sine wave form of the specified average rectified current. The forward conduction angle of the rectified current shall not be greater than 160 nor less than 130; and the power shall be equal to or greater than that of a half-sine wave, 4.4.3 Salt spray (corrosion). The markings shall be legible after the test. There shall be no evidence (when examined with no mgnification) of flaking or pitting of the finish or corrosion that will interfere with the mechanical and electrical application of the devices. 4.4.4 Inspection conditions. Unless otherwise specified herein, all inspections shall be made at case temperature (Tq) of 25 43C.MIL SPECS Icj 0000125 0001159 4 a MIL~S-19500/162B Table I. Group A inspection, ; MIL-STD-750 L Limits Examination or test r Symbol Method Details D Min Max Unit Subgroup 1 7 Visual and mechanical 2071 -- --- examination Subgroup 2 5 Forward voltage (See 4.4.1) 4011 Ip = 15 Ade Vp 1.5 Vde Reverse current 4016 Ip 1m614 Vp = 200 Vde -- 50 udAde 1N1615 Vp, = 400 Vde _ 59 Ade 11616 ve = 00 vae - | 50 | usde 1N4458 vt = 800 Vde _-- 50 vAde IN4A59 ve = 1000 Vde --- 50 udde Reverse current 4016 | T>. = 150C IR 1N1614 Va = 200 Vdc -- 500 udde 1N1615 Vp = 400 Vdc -- 506 uAdc 1N1616 Vp = 600 Vde -- 50G uAde 1N4458 Vp = 800 Vde 500 Ade IN4459 Vp = 1000 Vde -- 500 vide Reverse current at peak 4016 i, reverse voltage: 1N1614 Vy = 240 v(pk) --- | 500 | ua(pk) 1N1615 v, = 480 v(pk) --- 590 ua(pk) 1N1616 v= 720 v(pk) - 500 ua(pk) 1N4458 v,, = 960 v(pk) --- 500 ua(pk) 1N44L59 v,, = 1200 v(pk) --~ 500 ua(pk) Table II. Group B inspection, MIL-STD-750 L Limits Examination or test P Symbol Method Details D Min Max Unit Subgroup J ; 10 Physical dimensions 2066 --- --- ~- --- Subgroup 2 LO Solderability (see 3.7) 2026 Dwell time = 10 +1 sec Temperature cycling 1051 Test cond, F --- --- -_- -- Thermal, shock (glass strain) 1056 Test cond. A _ - - - Terminal strength: 2036 Tension Test cond. A; 2 lbs; -~- _ -_~ --- t= 15 + 3 sec Torque (seal) Test cond. Dy; 10 oz. in.; -~- | --- t=15 +3 sec Bending stress (axial Test cond. F; method B, _- -- _ strain) 3 lbs; t= 15 + 3 sec Moisture resistance 1021 Omit initial conditioning -- _ _ _ End points: Forward voltage (see 4.4.1) | 4011 |Ip= 15 Ade 7 Vp peme | 1.5 Vde * . : .MIL SPECS IC cooo1es doo10 o Ca-C 77 MIL-S-19500/162B Table II. Group B inspection. - Continued MIL-STD-750 t Limits Examination or test P Symbol - Method Details D Min Max Unit Sub; 2_ (Cont End points: (Cont) Reverse current: 4016 Ip 1N1614 Vp = 200 Vde 5G uAde 1N1615 ve = 400 Vde _ 50 uAde 1N1616 ve = 600 Vde _ 50 uAde 1N4458 ve = 800 Vde --- 50 uAde IN4459 ve = 1000 Vde = 50 uAde Subgroup 3 10 Shock 2016 500 G, t = 1 msec; 5 blows -<- --- --- each orientation: X,, Yy, and Yo Vibration fatigue 2046 10 G ne -_- -- --- (nonoperating) Vibration, variable frequency 2056 10 G --- _- --- (nonoperating) Constant acceleration 2006 |.10,000 G, X,, Yy+ and Y, --- _- ~ ae orientations End points: (Same aS subgroup 2) Subgroup 4 10 Terminal strength: 2036 Torque (stud) Test cond. D2; 15 lbs. in. --- --- --- --- = 15 + 3 sec End points: (Same as subgroup 2) Subgroup 5 10 Surge current 4066 ip(surge) = 150 a3 Ip = 5 Ade; IT, = 150C; 1 surge/minute, ty = 1/120 sec, 5 cycles 1m614 Vy(wkg) = 200 v(pk) --- --- --- --- 1NL615 vMace) = 400 v(pk) _ YT} 1N1616 veM (kg) = 600 v(pk) _-- we fee |e 1N4458 vag) = 800 v(pk) _- ff 1NAL59 Van(wkg) = 1000 v(pk) _- wf} End points: (Same as subgroup 2) Subgroup 6 10 Salt spray (corrosion) 1046 Test cond. B --- (see 3.6) End points: (Same as subgroup 2)MIL SPECS MIL-S-19500/162B Ic oo00125 ooo 2 f Table II. Group B inspection. - Continued MIL-STD-750 k Limits Examination or test P Symbol Method Details D Min | Max | Unit Subgroup 7 A= 10 High-temperature life (non- 1031 T, = 200C --- --~ -_- --- operating) End points: Forward voltage (see 4.4.1) 4012 Ip = 15 Ade Vp 1.5 Vde Reverse current: 4016 Ip 1N1614 Vp = 200 Vde - 100 uAde 1N1615 Vp = 400 Vde -- 1900 uAde 1N1616 Vp = 600 Vde 106 ude 1N4458 Vp = 800 Vdc 100 udde 1N4459 Vp = 1000 Vde - 100 uAde Subgroup 8 r= 10 Steady state operation: 1026 Tg = 150C; I, = 5 Ade, (see 4.4.2) f= 60 eps 1N1614 Vay(wkg) = 200 v(pk) a+ --+ ~-- 1N1615 Vpy(wke) = 400 v(pk) wee fae 1N1L616 Vew(wkg) = 600 v(pk) ~-- a INA458 Vpy(wkg) = 800 v(pk) awe fee --- 1N4459 Vew(wke) = 1000 v(pk) ane ++ --~ End points: (Same as subgroup 7) Subgroup 9 16 Low-temperature operation: Ty = -65C Forward voltage (see 4.4.1) 4011 Ip = 15 Ade Vp --- 1.7 Vde Reverse current: 4016 Ip 1N1614 Vp = 200 Vde 109 udde 1N1615 Vr = 400 Vde -- 100 uAde 1N1616 Vp = 600 Vde ~ 100 udde IN4458 Vp = 800 Vde --- 100 udde 1N4459 Vp = 1000 Vac -~ 100 udde Table III. Group CG inspection. MIL-STD-750 t Limits Examination or test P Symbols Method Details D Min Max Unit Subgroup 12 VY 10 Barometric pressure, reduced 1001 8 mm Hg at Vay = 600 Vde; = - - Sted (altitude operation) 15 mm Hg at Vpy = 600 Vde; t = 60 sec Measurement during test: Reverse current: 4016 IR 1N1614 VR = 200 Vde - 50 udAde 1N1615 Vp = 400 Vde o-- 50 uAde 11616 V, = 600 Vde --- 50 uAde 1NA458 Vi = 800 Vac -~- | 50 | udde IN4L59 Vp = 1000 Vde 50 uAde VY This t test shall be conducted on the initial lot and thereafter 6 anata every six months,MIL SPECS 1c O0001e5 OOO1libe 4 a Chang, /-// MIL-S-19500/162B 5. PREPARATION FOR DELIVERY 5.1 Preparation for delivery shall conform to Specification MIL-S-19500, 6, NOTES 6.1 The notes specified in Specifieation MIL-S~19500 are applicable to this specification, Custodians: Preparing activity: Army - EL Army ~ EL Navy ~ Ships Air Force -11 (Project 5960-1333) Reviewers: Army - EL Review/user information is current Navy - SH as of the date of this document, For Air Force - 11, 17, 85 future coordination of changes to this document, draft circulation should be Users: based on the information in the current Army - EL, MU DODISS. Navy - WP, MC, CG