BUZ20 Semiconductor Data Sheet 12A, 100V, 0.200 Ohm, N-Channel Power MOSFET October 1998 File Number 2254.1 Features * 12A, 100V [ /Title This is an N-Channel enhancement mode silicon gate power * rDS(ON) = 0.200 (BUZ20 field effect transistor designed for applications such as * SOA is Power Dissipation Limited ) switching regulators, switching converters, motor drivers, /Subject relay drivers and drivers for high power bipolar switching * Nanosecond Switching Speeds transistors requiring high speed and low gate drive power. (12A, * Linear Transfer Characteristics This type can be operated directly from integrated circuits. 100V, * High Input Impedance 0.200 Formerly developmental type TA17411. * Majority Carrier Device Ohm, N* Related Literature Channel Ordering Information - TB334 "Guidelines for Soldering Surface Mount PART NUMBER PACKAGE BRAND Power Components to PC Boards" BUZ20 TO-220AB BUZ20 MOSNOTE: When ordering, use the entire part number. FET) Symbol /Author D () /KeyG words (Harris S Semiconductor, NChannel Packaging Power JEDEC TO-220AB MOSSOURCE FET, DRAIN TOGATE 220AB) DRAIN (FLANGE) /Creator () /DOCIN FO pdfmark [ /PageMode /UseOutlines /DOCVIEW 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-800-4-HARRIS | Copyright (c) Harris Corporation 1998 BUZ20S TC = 25oC, Unless Otherwise Specified Absolute Maximum Ratings Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current (TC = 30oC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG DIN Humidity Category - DIN 40040 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IEC Climatic Category - DIN IEC 68-1. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg BUZ20 100 100 12 48 20 75 0.6 -55 to 150 E 55/150/56 UNITS V V A A V W W/oC oC 300 260 oC oC CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. TC = 25oC, Unless Otherwise Specified Electrical Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BVDSS ID = 250A, VGS = 0V 100 - - V Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 1mA (Figure 9) 2.1 3 4 V TJ = 25oC, VDS = 100V, VGS = 0V - 20 250 A TJ = 125oC, VDS = 100V, VGS = 0V - 100 1000 A VDS = 0V, VGS = 20V - 10 100 nA rDS(ON) ID = 6A, VGS = 10V (Figure 8) - 0.15 0.200 gfs VDS = 25V, ID = 6A (Figure 11) 2.7 4.0 - S - 30 45 ns Zero Gate Voltage Drain Current IDSS Gate to Source Leakage Current IGSS Drain to Source On Resistance (Note 2) Forward Transconductance (Note 2) Turn-On Delay Time td(ON) Rise Time tr Turn-Off Delay Time VCC = 30V, ID 2.9A, VGS = 10V, RGS = 50, RL = 10, (Figures 14, 15) - 50 75 ns td(OFF) - 110 140 ns tf - 60 80 ns - 1500 2000 pF pF Fall Time Input Capacitance CISS VDS = 25V, VGS = 0V, f = 1MHz (Figure 10) Output Capacitance COSS - 300 500 Reverse Transfer Capacitance CRSS - 80 140 pF Thermal Resistance Junction to Case RJC 1.67 oC/W Thermal Resistance Junction to Ambient RJA 75 oC/W Source to Drain Diode Specifications PARAMETER SYMBOL Continuous Source to Drain Current Pulsed Source to Drain Current Source to Drain Diode Voltage MIN TYP MAX UNITS ISD TC = 25oC - - 12 A ISDM TC = 25oC - - 48 A VSD TJ = 25oC, ISD = 24, VGS = 0V TJ = 25oC, ISD = 12A, dISD/dt = 100A/s, VR = 30V - 1.4 1.8 V - 200 - ns - 1.6 - C Reverse Recovery Time trr Reverse Recovery Charge QRR TEST CONDITIONS NOTES: 2. Pulse Test: Pulse width 300s, duty cycle 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3). 2 BUZ20 Typical Performance Curves Unless Otherwise Specified 15 POWER DISSIPATION MULTIPLIER 1.2 VGS 10V ID, DRAIN CURRENT (A) 1.0 0.8 0.6 0.4 10 5 0.2 0 0 0 25 50 75 100 TC , CASE TEMPERATURE (oC) 125 150 ZJC, TRANSIENT THERMAL IMPEDANCE 50 100 150 TC, CASE TEMPERATURE (oC) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE 1 0 FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 0.5 0.2 0.1 0.1 PDM 0.05 0.02 0.01 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC + TC SINGLE PULSE 0.01 10-5 10-4 10-3 10-2 10-1 t, RECTANGULAR PULSE DURATION (s) 100 101 FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE 102 30 PD = 75W 5s ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 10s 100s 101 1ms 100 10-1 100 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 10ms 100ms DC VGS = 20V PULSE DURATION = 80s TJ = 25oC VGS = 10V 20 VGS = 8.0V VGS = 7.5V 10 VGS = 7.0V VGS = 6.5V 0 VGS = 6.0V VGS = 5.5V VGS = 5.0V VGS = 4.5V VGS = 4.0V TJ = MAX RATED TC = 25oC 101 102 VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 4. FORWARD BIAS SAFE OPERATING AREA 3 103 0 2 4 6 VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 5. OUTPUT CHARACTERISTICS 8 BUZ20 15 Unless Otherwise Specified (Continued) 0.8 PULSE DURATION = 80s VDS = 25V 10 TJ = 25oC 5 0 0 PULSE DURATION = 80s rDS(ON), ON-STATE RESISTANCE () IDS(ON), DRAIN TO SOURCE CURRENT (A) Typical Performance Curves 5 VGS, GATE TO SOURCE VOLTAGE (V) 0.7 0.4 0.3 0.2 0 VGS(TH), GATE THRESHOLD VOLTAGE (V) rDS(ON), DRAIN TO SOURCE ON-RESISTANCE () VGS = 10V 0.2 0.1 0 50 100 150 4 VDS = VGS, ID = 1mA 2 1 0 -50 0 50 100 150 FIGURE 9. GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE 6 PULSE DURATION = 80s VDS = 25V, TJ = 25oC VGS = 0, f = 1MHz gfs, TRANSCONDUCTANCE (S) C, CAPACITANCE (nF) 30 TJ, JUNCTION TEMPERATURE (oC) FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE CISS 100 COSS 10-1 10-2 10 20 ID, DRAIN CURRENT (A) 3 TJ, JUNCTION TEMPERATURE (oC) 101 0 FIGURE 7. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT PULSE DURATION = 80s ID = 6A -50 10V 20V 0.1 10 0.3 0 5.5V 6V 6.5V 7V 7.5V 8V 9V 0.5 FIGURE 6. TRANSFER CHARACTERISTICS 0.4 VGS = 5V 0.6 CRSS VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS CDS + CGD 0 10 20 30 VDS, DRAIN TO SOURCE VOLTAGE (V) 40 FIGURE 10. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE 4 5 4 3 2 1 0 0 5 10 ID, DRAIN CURRENT (A) FIGURE 11. TRANSCONDUCTANCE vs DRAIN CURRENT 15 BUZ20 Typical Performance Curves 15 PULSE DURATION = 80s 101 TJ = 150oC TJ = 25oC 100 10-1 ID = 18A VGS, GATE TO SOURCE VOLTAGE (V) ISD , SOURCE TO DRAIN CURRENT (A) 102 Unless Otherwise Specified (Continued) 10 VDS = 80V 5 0 0 0.5 1.0 1.5 2.0 2.5 VSD, SOURCE TO DRAIN VOLTAGE (V) 3.0 FIGURE 12. SOURCE TO DRAIN DIODE VOLTAGE VDS = 20V 0 10 20 30 Qg(TOT) , TOTAL GATE CHARGE (nC) 40 FIGURE 13. GATE TO SOURCE VOLTAGE vs GATE CHARGE Test Circuits and Waveforms tON tOFF td(ON) td(OFF) tf tr RL VDS 90% 90% + RG - VDD 10% 10% 0 DUT 90% VGS VGS 0 FIGURE 14. SWITCHING TIME TEST CIRCUIT 0.2F 50% PULSE WIDTH FIGURE 15. RESISTIVE SWITCHING WAVEFORMS VDS (ISOLATED SUPPLY) CURRENT REGULATOR 12V BATTERY 50% 10% VDD Qg(TOT) SAME TYPE AS DUT 50k Qgd 0.3F VGS Qgs D VDS DUT G 0 Ig(REF) S 0 IG CURRENT SAMPLING RESISTOR VDS ID CURRENT SAMPLING RESISTOR FIGURE 16. GATE CHARGE TEST CIRCUIT 5 Ig(REF) 0 FIGURE 17. GATE CHARGE WAVEFORMS