UNISONIC TECHNOLOGIES CO., LTD
2SB772S
PNP SILICON TRANSISTOR
www.unisonic.com.tw 1 of 3
Copyright © 2009 Unisonic Technologies Co., Ltd QW-R208-002.E
MEDIUM POWER LOW
VOLTAGE TRANSISTOR
DESCRIPTION
The UTC 2SB772S is a medium power low voltage transistor,
designed for audio power amplifier, DC-DC converter and voltage
regulator.
FEATURES
* High current output up to 3A
* Low saturation voltage
* Complement to 2SD882S
Lead-free: 2SB772SL
Halogen-free: 2SB772SG
ORDERING INFORMATION
Ordering Number Pin Assignment
Normal Lead Free Halogen Free Package 1 2 3 Packing
2SB772S-x-AA3-R 2SB772SL-x-AA3-R 2SB772SG-x-AA3-R SOT-223 B C E Tape Reel
2SB772S-x-AB3-R 2SB772SL-x-AB3-R 2SB772SG-x-AB3-R SOT-89 B C E Tape Reel
2SB772S-x-T92-B 2SB772SL-x-T92-B 2SB772SG-x-T92-B TO-92 E C B Tape Box
2SB772S-x-T92-K 2SB772SL-x-T92-K 2SB772SG-x-T92-K TO-92 E C B Bulk
2SB772S
PNP SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 2 of 3
www.unisonic.com.tw QW-R208-002.E
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
PARAMETER SYMBOL RATINGS UNIT
Collector-Base Voltage VCBO -40 V
Collector-Emitter Voltage VCEO -30 V
Emitter-Base Voltage VEBO -5 V
Peak Collector Current ICP -7 A
DC Collector Current IC -3 A
Base Current IB -0.6 A
SOT-89 0.5 W
SOT-223 1 W
Power Dissipation
TO-92
PD
0.5 W
Junction Temperature TJ +150 °C
Storage Temperature TSTG -55 ~ +150 °C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta= 25°C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector-Base Breakdown Voltage BVCBO IC=-100μA, IE=0 -40 V
Collector-Emitter Breakdown Voltage BVCEO IC=-1mA, IB=0 -30 V
Emitter-Base Breakdown Voltage BVEBO I
E=-100μA, IC=0 -5 V
Collector Cut-Off Current ICBO V
CB=-30V ,IE=0 -1000 nA
Collector Cut-Off Current ICEO V
CE=-30V ,IB=0 -1000 nA
Emitter Cut-Off Current IEBO V
EB=-3V, IC=0 -1000 nA
hFE1 V
CE=-2V, IC=-20mA 30 200
DC Current Gain(Note 1) hFE2 V
CE=-2V, IC=-1A 100 150 400
Collector-Emitter Saturation Voltage VCE(SAT) IC=-2A, IB=-0.2A -0.3 -0.5 V
Base-Emitter Saturation Voltage VBE(SAT) IC=-2A, IB=-0.2A -1.0 -2.0 V
Current Gain Bandwidth Product fT V
CE=-5V, IC=-0.1A 80 MHz
Output Capacitance Cob VCB=-10V, IE=0,f=1MHz 45 pF
Note 1: Pulse test: PW<300μs, Duty Cycle<2%
CLASSIFICATION OF hFE2
RANK Q P E
RANGE 100 ~ 200 160 ~ 320 200 ~ 400
2SB772S
PNP SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 3 of 3
www.unisonic.com.tw QW-R208-002.E
■ TYPICAL CHARACTERICS
Collector Current, Ic (mA)
-100-101-102-103-104
-10-1
-103
-102
-101
-1
Collector-Emitter Saturation Voltage
vs. Collector Current
25°C
IC/IB=10
150°C
Collector-Emitter Voltage, VCE (V)
012345
0
0.4
0.8
1.6
2.0
1.2
Collector Current vs.
Collector-Emitter Voltage
Collector Current, Ic (mA)
-10-1 -100-101-102-103-104
0
200
400
600
800 VCE=-2V
150°C
25°C
DC Current Gain vs. Collector Current
Collector Current, Ic (mA)
-100-101-102-103-104
-10-1
0
-0.4
-0.8
-1.2
Base-Emitter Saturation Voltage vs.
Collector Current
IC/IB=10
25°C
150°C
