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©2012 Fairchild Semiconductor Corporation 1www.fairchildsemi.com
FSB50825A / FSB50825AT Rev. 1.2
FSB50825A / FSB50825AT Motion SPM® 5 Series
October 2016
FSB50825A / FSB50825AT
Motion SPM® 5 Series
Features
• UL Certified No. E209204 (UL1557)
• 250 V RDS(on) = 0.45 Max FRFET MOSFET 3-
Phase Inverter with Gate Drivers and Protection
• Built-in Bootstrap Diodes Simplify PCB Layout
• Separate Open-Source Pins from Low-Side MOSFETs
for Three-Phase Current-Sensing
• Active-HIGH Interface, Works with 3.3 / 5 V Logic,
Schmitt-trigger Input
• Optimized for Low Electromagnetic Interference
• HVIC Temperature-Sensing Built-in for Temperature
Monitoring
• HVIC for Gate Driving and Under-Voltage Protection
• Isolation Rating: 1500 Vrms / 1 min.
• RoHS Compliant
Applications
• 3-Phase Inverter Driver for Small Power AC Motor
Drives
Related Source
•RD-FSB50450A - Reference Design for Motion SPM
5
Series Ver.2
•AN-9082 - Motion SPM5 Series Thermal Performance
by Contact Pressure
•AN-9080 - User’s Guide for Motion SPM 5 Series V2
General Description
The FSB50825A/AT is an advanced Motion SPM® 5
module providing a fully-featured, high-performance
inverter output stage for AC Induction, BLDC and PMSM
motors. These modules integrate optimized gate drive of
the built-in MOSFETs(FRFET® technology) to minimize
EMI and losses, while also providing multiple on-module
protection features including under-voltage lockouts and
thermal monitoring. The built-in high-speed
HVIC requires only a single supply voltage and
translates the incoming logic-level gate inputs to the
high-voltage, high-current drive signals required to
properly drive the module's internal MOSFETs.
Separate open-source MOSFET terminals are available
for each phase to support the widest variety of control
algorithms.
FSB50325A FSB50325AT
FSB50825A
FSB50825AT
Package Marking & Ordering Information
Device Marking Device Package Reel Size Packing Type Quantity
FSB50825A FSB50825A SPM5P-023 -Rail 15
FSB50825AT FSB50825AT SPM5N-023 -Rail 15
FSB50825A / FSB50825AT Motion SPM® 5 Series
©2012 Fairchild Semiconductor Corporation 2www.fairchildsemi.com
FSB50825A / FSB50825AT Rev. 1.2
Absolute Maximum Ratings
Symbol Parameter Conditions Rating Unit
VDSS Drain-Source Voltage of Each MOSFET 250 V
*ID 25 Each MOSFET Drain Current, Continuous TC = 25°C 3.6 A
*ID 80 Each MOSFET Drain Current, Continuous TC = 80°C 2.7 A
*IDP Each MOSFET Drain Current, Peak TC = 25°C, PW < 100 s 9.0 A
*IDRMS Each MOSFET Drain Current, Rms TC = 80°C, FPWM < 20 kHz 1.9 Arms
*PDMaximum Power Dissipation TC = 25°C, For Each MOSFET 14.2 W
Inverter Part (each MOSFET unless otherwise specified.)
Control Part (each HVIC unless otherwise specified.)
Symbol Parameter Conditions Rating Unit
VCC Control Supply Voltage Applied Between VCC and COM 20 V
VBS High-side Bias Voltage Applied Between VB and VS20 V
VIN Input Signal Voltage Applied Between IN and COM -0.3 ~ VCC + 0.3 V
Bootstrap Diode Part (each bootstrap diode unless otherwise specified.)
Symbol Parameter Conditions Rating Unit
VRRMB Maximum Repetitive Reverse Voltage 250 V
* IFB Forward Current TC = 25°C 0.5 A
* IFPB Forward Current (Peak) TC = 25°C, Under 1ms Pulse Width 1.5 A
Thermal Resistance
Symbol Parameter Conditions Rating Unit
RJC Junction to Case Thermal Resistance Each MOSFET under Inverter Oper-
ating Condition (1st Note 1) 8.8 °C/W
Total System
Symbol Parameter Conditions Rating Unit
TJOperating Junction Temperature -40 ~ 150 °C
TSTG Storage Temperature -40 ~ 125 °C
VISO Isolation Voltage 60 Hz, Sinusoidal, 1 Minute, Con-
nect Pins to Heat Sink Plate 1500 Vrms
1st Notes:
1. For the measurement point of case temperature TC, please refer to Figure 4.
2. Marking “ * “ is calculation value or design factor.
FSB50825A / FSB50825AT Motion SPM® 5 Series
©2012 Fairchild Semiconductor Corporation 3www.fairchildsemi.com
FSB50825A / FSB50825AT Rev. 1.2
Pin descriptions
Pin Number Pin Name Pin Description
1COM IC Common Supply Ground
2 VB(U) Bias Voltage for U-Phase High-Side MOSFET Driving
3 VCC(U) Bias Voltage for U-Phase IC and Low-Side MOSFET Driving
4IN(UH) Signal Input for U-Phase High-Side
5IN(UL) Signal Input for U-Phase Low-Side
6 N.C No Connection
7 VB(V) Bias Voltage for V-Phase High Side MOSFET Driving
8 VCC(V) Bias Voltage for V-Phase IC and Low Side MOSFET Driving
9IN(VH) Signal Input for V-Phase High-Side
10 IN(VL) Signal Input for V-Phase Low-Side
11 VTS Output for HVIC Temperature Sensing
12 VB(W) Bias Voltage for W-Phase High-Side MOSFET Driving
13 VCC(W) Bias Voltage for W-Phase IC and Low-Side MOSFET Driving
14 IN(WH) Signal Input for W-Phase High-Side
15 IN(WL) Signal Input for W-Phase Low-Side
16 N.C No Connection
17 PPositive DC-Link Input
18 U, VS(U) Output for U-Phase & Bias Voltage Ground for High-Side MOSFET Driving
19 NUNegative DC-Link Input for U-Phase
20 NVNegative DC-Link Input for V-Phase
21 V, VS(V) Output for V-Phase & Bias Voltage Ground for High-Side MOSFET Driving
22 NWNegative DC-Link Input for W-Phase
23 W, VS(W) Output for W Phase & Bias Voltage Ground for High-Side MOSFET Driving
(1) COM
(2) VB(U)
(3) VCC(U)
(4) IN (UH)
(5) IN (UL)
(6) N.C
(7) VB(V)
(8) VCC(V)
(9) IN (VH)
(10) IN (VL)
(11) VTS
(12) V B(W)
(13) VCC(W)
(14) IN (WH)
(15) IN (WL)
(16)
(17) P
(18) U, VS(U)
(19) N U
(20) NV
(21) V, VS(V)
(22) N W
(23) W, VS(W)
COM
VCC
LIN
HIN
VB
HO
VS
LO
COM
VCC
LIN
HIN
VB
HO
VS
LO
VTS
COM
VCC
LIN
HIN
VB
HO
VS
LO
N.C
Figure 1. Pin Configuration and Internal Block Diagram (Bottom View)
1st Notes:
3. Source terminal of each low-side MOSFET is not connected to supply ground or bias voltage ground inside Motion SPM® 5 product. External connections should be made as
indicated in Figure 3.
FSB50825A / FSB50825AT Motion SPM® 5 Series
©2012 Fairchild Semiconductor Corporation 4www.fairchildsemi.com
FSB50825A / FSB50825AT Rev. 1.2
Electrical Characteristics (TJ = 25°C, VCC = VBS = 15 V unless otherwise specified.)
Inverter Part
Symbol Parameter Conditions Min Typ Max Unit
BVDSS
Drain - Source
Breakdown Voltage VIN = 0 V, ID = 1 mA (2nd Note 1) 250 - - V
IDSS
Zero Gate Voltage
Drain Current VIN = 0 V, VDS = 250 V - - 1 mA
RDS(on)
Static Drain - Source
Turn-On Resistance VCC = VBS = 15 V, VIN = 5 V, ID = 2.0 A -0.33 0.45
VSD
Drain - Source Diode
Forward Voltage VCC = VBS = 15V, VIN = 0 V, ID = -2.0 A - - 1.2 V
tON
Switching Times
VPN = 150 V, VCC = VBS = 15 V, ID = 2.0 A
VIN = 0 V 5 V, Inductive Load L = 3 mH
High- and Low-Side MOSFET Switching
(2nd Note 2)
-950 -ns
tOFF -520 -ns
trr -150 -ns
EON -100 -J
EOFF -10 -J
RBSOA Reverse Bias Safe Oper-
ating Area
VPN = 200 V, VCC = VBS = 15 V, ID = IDP, VDS = BVDSS,
TJ = 150°C
High- and Low-Side MOSFET Switching (2nd Note 3)
Full Square
(each MOSFET unless otherwise specified.)
Control Part (each HVIC unless otherwise specified.)
Symbol Parameter Conditions Min Typ Max Unit
IQCC Quiescent VCC Current VCC = 15 V,
VIN = 0 V Applied Between VCC and COM - - 200 A
IQBS Quiescent VBS Current VBS = 15 V,
VIN = 0 V
Applied Between VB(U) - U,
VB(V) - V, VB(W) - W - - 100 A
UVCCD Low-Side Under-Voltage
Protection (Figure 8)
VCC Under-Voltage Protection Detection Level 7.4 8.0 9.4 V
UVCCR VCC Under-Voltage Protection Reset Level 8.0 8.9 9.8 V
UVBSD High-Side Under-Voltage
Protection (Figure 9)
VBS Under-Voltage Protection Detection Level 7.4 8.0 9.4 V
UVBSR VBS Under-Voltage Protection Reset Level 8.0 8.9 9.8 V
VTS HVIC Temperature Sens-
ing Voltage Output VCC = 15 V, THVIC = 25°C (2nd Note 4) 600 790 980 mV
VIH ON Threshold Voltage Logic HIGH Level Applied between IN and COM - - 2.9 V
VIL OFF Threshold Voltage Logic LOW Level 0.8 - - V
Bootstrap Diode Part (each bootstrap diode unless otherwise specified.)
Symbol Parameter Conditions Min Typ Max Unit
VFB Forward Voltage IF = 0.1 A, TC = 25°C (2nd Note 5) -2.5 - V
trrB Reverse Recovery Time IF = 0.1 A, TC = 25°C -80 -ns
2nd Notes:
1. BVDSS is the absolute maximum voltage rating between drain and source terminal of each MOSFET inside Motion SPM® 5 product. VPN should be sufficiently less than this
value considering the effect of the stray inductance so that VPN should not exceed BVDSS in any case.
2. tON and tOFF include the propagation delay of the internal drive IC. Listed values are measured at the laboratory test condition, and they can be different according to the field
applications due to the effect of different printed circuit boards and wirings. Please see Figure 6 for the switching time definition with the switching test circuit of Figure 7.
3. The peak current and voltage of each MOSFET during the switching operation should be included in the Safe Operating Area (SOA). Please see Figure 7 for the RBSOA test
circuit that is same as the switching test circuit.
4. Vts is only for sensing-temperature of module and cannot shutdown MOSFETs automatically.
5. Built-in bootstrap diode includes around 15 Ωresistance characteristic. Please refer to Figure 2.
0123456789101112131415
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Built-in Bootstrap Diode VF-IF Characteristic
IF [A]
VF [V]
Tc=25°C
FSB50825A / FSB50825AT Motion SPM® 5 Series
©2012 Fairchild Semiconductor Corporation 5www.fairchildsemi.com
FSB50825A / FSB50825AT Rev. 1.2
Recommended Operating Condition
Symbol Parameter Conditions Min. Typ. Max. Unit
VPN Supply Voltage Applied Between P and N -150 200 V
VCC Control Supply Voltage Applied Between VCC and COM 13.5 15.0 16.5 V
VBS High-Side Bias Voltage Applied Between VB and VS13.5 15.0 16.5 V
VIN(ON) Input ON Threshold Voltage Applied Between IN and COM 3.0 -VCC V
VIN(OFF) Input OFF Threshold Voltage 0-0.6 V
tdead
Blanking Time for Preventing
Arm-Short VCC = VBS = 13.5 ~ 16.5 V, TJ 150°C 1.0 - - s
fPWM PWM Switching Frequency TJ 150°C -15 -kHz
Figure 2. Built-in Bootstrap Diode Characteristics (Typical)
HIN LIN Output Note
0 0 Z Both FRFET Off
0 1 0 Low side FRFET On
10 V
DC High side FRFET On
1 1 Forbidden Shoot through
Open Open Z Same as (0,0)
COM
VCC
LIN
HIN
VB
HO
VS
LO
P
NR
3
Inverter
Output
C3
C
1
MCU
+15 V
10 F
These values depend on PWM control algorithm
* Example of Bootstrap Paramters:
C
1 = C2 = 1 F Ceramic Capacitor
R
5
C5
VDC
C2
VTS
* Example Circuit : V phase
C4
V
One Leg Diagram of Motion SPM® 5 Product
FSB50825A / FSB50825AT Motion SPM® 5 Series
©2012 Fairchild Semiconductor Corporation 6www.fairchildsemi.com
FSB50825A / FSB50825AT Rev. 1.2
Figure 3. Recommended MCU Interface and Bootstrap Circuit with Parameters
3rd Notes:
1. Parameters for bootstrap circuit elements are dependent on PWM algorithm. For 15 kHz of switching frequency, typical example of parameters is shown above.
2. RC-coupling (R5 and C5) and C4 at each input of Motion SPM 5 product and MCU (Indicated as Dotted Lines) may be used to prevent improper signal due to surge-noise.
3. Bold lines should be short and thick in PCB pattern to have small stray inductance of circuit, which results in the reduction of surge-voltage. Bypass capacitors such as C1, C2
and C3 should have good high-frequency characteristics to absorb high-frequency ripple-current.
Figure 4. Case Temperature Measurement
3rd Notes:
4. Attach the thermocouple on top of the heat-sink of SPM 5 package (between SPM 5 package and heatsink if applied) to get the correct temperature measurement.
Figure 5. Temperature Profile of VTS (Typical)
tON trr
Irr
100% of ID120% of ID
(a) Turn-on
tOFF
(b) Turn-off
ID
VDS
VDS
ID
VIN VIN
10% of ID
FSB50825A / FSB50825AT Motion SPM® 5 Series
©2012 Fairchild Semiconductor Corporation 7www.fairchildsemi.com
FSB50825A / FSB50825AT Rev. 1.2
Figure 6. Switching Time Definitions
COM
VCC
LIN
HIN
VB
HO
VS
LO
ID
VCC
CBS
LV
DC
+
VDS
-
VTS
One Leg Diagram of Motion SPM® 5 Product
Figure 7. Switching and RBSOA (Single-pulse) Test Circuit (Low-side)
UVCCD
UVCCR
Input Signal
UV Protection
Status
Low-side Supply, VCC
MOSFET Current
RESET DETECTION RESET
Figure 8. Under-Voltage Protection (Low-Side)
UVBSD
UVBSR
Input Signal
UV Protection
Status
High-side Supply, VBS
MOSFET Current
RESET DETECTION RESET
Figure 9. Under-Voltage Protection (High-Side)
COM
VCC
LIN
HIN
VB
HO
VS
LO
COM
VCC
LIN
HIN
VB
HO
VS
LO
COM
VCC
LIN
HIN
VB
HO
VS
LO
(1 ) COM
(2 ) VB(U)
(3 ) VCC(U)
(4 ) IN
(UH)
(5 ) IN
(UL)
(6 ) N.C
(7 ) VB(V)
(8 ) VCC(V)
(9 ) IN
(VH)
(10) IN
(VL)
(11) VTS
(12) V
B(W)
(13) VCC(W)
(14) IN
(WH)
(15) IN
(WL)
(16) N.C
(17) P
(18) U, VS(U)
(19) N
U
(22) N
W
Micom
C1
15 V
Supply
C3VDC
C2
R3
R4
C6
R5
C5
For current-sensing and protection
VTS
(21) V, V
S(V)
(20) N
V
(23) W, V
S(W)
C4
M
FSB50825A / FSB50825AT Motion SPM® 5 Series
©2012 Fairchild Semiconductor Corporation 8www.fairchildsemi.com
FSB50825A / FSB50825AT Rev. 1.2
Figure 10. Example of Application Circuit
4th Notes:
1. About pin position, refer to Figure 1.
2. RC-coupling (R5 and C5, R4 and C6) and C4 at each input of Motion SPM® 5 product and MCU are useful to prevent improper input signal caused by surge-noise.
3. The voltage-drop across R3 affects the low-side switching performance and the bootstrap characteristics since it is placed between COM and the source terminal of the low-
side MOSFET. For this reason, the voltage-drop across R3 should be less than 1 V in the steady-state.
4. Ground-wires and output terminals, should be thick and short in order to avoid surge-voltage and malfunction of HVIC.
5. All the filter capacitors should be connected close to Motion SPM 5 product, and they should have good characteristics for rejecting high-frequency ripple current.
FSB50825A / FSB50825AT Motion SPM® 5 Series
©2012 Fairchild Semiconductor Corporation 9www.fairchildsemi.com
FSB50825A / FSB50825AT Rev. 1.2
Detailed Package Outline Drawings
NOTES: UNLESS OTHERWISE SPECIFIED
A) THIS PACKAGE DOES NOT COMPLY
TO ANY CURRENT PACKAGING STANDARD
B) ALL DIMENSIONS ARE IN MILLIMETERS
C) DIMENSI ONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH, AND TI E BAR EXTRUSI ONS
D) ( ) IS REFERENCE
E) [ ] IS ASS'Y QUALITY
F) DRAWING FILENAME: MOD23DCREV4.0
G) FAIRCHILD SEMICONDUCTOR
116
17 23
14.00
14.55 ?0.30
2
?
~6?
(1.00)
(1.80)
(1.165) (1.165)
(0 . 2 0) 13X
0.50?0. 10 16X
Max 1.00
2.95 ?0. 50
(0.30)
0. 6 0 ?0. 10 5X
Ma x 1. 0 0
(0.17)
(1.375)(2.275)
15X1.778=26.67?0.30
(R0.40)
29.00?0. 20
13.34?0.3 0 13.34?0. 30
12.23?0.30 13.13?0.3 0
0.6
0
0.45
3.90?0.30 2X
1.95?0.30
2.48?0.30 3.90?0.30 4X
0.50
?0 .10 2X
PIN19,20
12.00 ?0.20
17 2319
3.15?0.20
(6.05)
(FSB50825A)
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or data on the drawing and contact a FairchildSemiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide therm and conditions,
specifically the the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/dwg/MO/MOD23DC.pdf
FSB50825A / FSB50825AT Motion SPM® 5 Series
©2012 Fairchild Semiconductor Corporation 10 www.fairchildsemi.com
FSB50825A / FSB50825AT Rev. 1.2
Detailed Package Outline Drawings (FSB50825AT)
NOTES: UNLESS OTHERWISE SPE CI FIE D
A) THIS PACKAGE DOES NOT COMPLY
TO ANY CURRENT PACKAGING STANDARD
B) ALL DIMENSIONS ARE IN MILLIMETERS
C) DIME NSI ONS ARE EXCL USI VE OF BURRS,
MOLD FLASH, AND TIE BAR EXTRUSIONS
D) ( ) IS REFERENCE
E) DRAWI NG FI LENAME: MOD23DFREV4.0
F) FAIRCHILD SEMICONDUCTOR
116
17 23
14.00
14.00 ?0.30
(1.00)
(6.05)
(1.80)
(1.165) (1.165)
(0.20)
Max 1.00
(2.275) (1.375)
5.00 ?0.30
(0.17)
0.60
0. 4 5
0.50?0. 10 16X
15X1.778=26.67
?0.30
29.00?0.20
13.34?0. 30 13.34?0.30
12.23?0.30 13.13?0.30
(R
0.40)
2.95 ?0.50
(0.30)
0.60?0. 10 5X
Ma x 1. 0 0
3.90?0. 30 2X
1.95?0.30
2. 4 8 ?0.30 3.90?0.30 4X
0.50?0. 10 2X
PIN19,20
12.00 ?0. 20
(90?)
17 2319
19 . 0 0
3.15?0.20
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or data on the drawing and contact a FairchildSemiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide therm and conditions,
specifically the the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/dwg/MO/MOD23DF.pdf
FSB50825A / FSB50825AT Motion SPM® 5 Series
©2012 Fairchild Semiconductor Corporation 11 www.fairchildsemi.com
FSB50825A / FSB50825AT Rev. 1.2
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
AccuPower™
AttitudeEngine™
Awinda®
AX-CAP®*
BitSiC™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
DEUXPEED®
Dual Cool™
EcoSPARK®
EfficentMax™
ESBC™
Fairchild®
Fairchild Semiconductor®
FACT Quiet Series™
FACT®
FastvCore™
FETBench™
FPS™
F-PFS™
FRFET®
Global Power ResourceSM
GreenBridge™
Green FPS™
Green FPS™ e-Series™
Gmax™
GTO™
IntelliMAX™
ISOPLANAR™
Marking Small Speakers Sound Louder
and Better™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MicroPak2™
MillerDrive™
MotionMax™
MotionGrid®
MTi®
MTx®
MVN®
mWSaver®
OptoHiT™
OPTOLOGIC®
OPTOPLANAR®
Power Supply WebDesigner™
PowerTrench®
PowerXS™
Programmable Active Droop™
QFET®
QS™
Quiet Series™
RapidConfigure™
Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
SMART START™
Solutions for Your Success™
SPM®
STEALTH™
SuperFET®
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS®
SyncFET™
Sync-Lock™
®*
TinyBoost®
TinyBuck®
TinyCalc™
TinyLogic®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TranSiC™
TriFault Detect™
TRUECURRENT®*
SerDes™
UHC®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
VoltagePlus™
XS™
Xsens™
仙童 ®
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
®
™
Rev. I77
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. TO OBTAIN THE LATEST, MOST UP-TO-DATE DATASHEET AND PRODUCT INFORMATION, VISIT OUR
WEBSITE AT HTTP://WWW.FAIRCHILDSEMI.COM. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF
ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF
OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE
WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
tm
®
AUTHORIZED USE
Unless otherwise specified in this data sheet, this product is a standard commercial product and is not intended for use in applications that require
extraordinary levels of quality and reliability. This product may not be used in the following applications, unless specifically approved in writing by a Fairchild
officer: (1) automotive or other transportation, (2) military/aerospace, (3) any safety critical application – including life critical medical equipment – where the
failure of the Fairchild product reasonably would be expected to result in personal injury, death or property damage. Customer’s use of this product is subject
to agreement of this Authorized Use policy. In the event of an unauthorized use of Fairchild’s product, Fairchild accepts no liability in the event of product
failure. In other respects, this product shall be subject to Fairchild’s Worldwide Terms and Conditions of Sale, unless a separate agreement has been signed
by both Parties.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website,
www.fairchildsemi.com, under Terms of Use
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of
their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance,
failed applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers
from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized
Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handling and storage and provide access to Fairchild’s full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is
committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
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Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
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claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
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