APT1001RSVR 11A 1.000 1000V POWER MOS V(R) D3PAK Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. * Faster Switching * 100% Avalanche Tested * Lower Leakage * Surface Mount D3PAK Package D G S MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25C unless otherwise specified. Parameter APT1001RSVR UNIT 1000 Volts Drain-Source Voltage 11 Continuous Drain Current @ TC = 25C 1 Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous 30 Gate-Source Voltage Transient 40 Total Power Dissipation @ TC = 25C 280 Watts Linear Derating Factor 2.24 W/C V GSM PD T J,TSTG 44 Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current E AR EAS -55 to 150 Operating and Storage Junction Temperature Range TL 1 11 1 Single Pulse Avalanche Energy C 300 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy Volts Amps 30 4 mJ 1210 STATIC ELECTRICAL CHARACTERISTICS BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions MIN Drain-Source Breakdown Voltage (V GS = 0V, ID = 250A) 1000 Volts 11 Amps On State Drain Current 2 (VDS > ID(on) x R DS(on) Max, VGS = 10V) Drain-Source On-State Resistance 2 TYP (VGS = 10V, 0.5 I D[Cont.]) MAX 1.00 Zero Gate Voltage Drain Current (VDS = VDSS , VGS = 0V) 25 Zero Gate Voltage Drain Current (VDS = 0.8 V DSS, VGS = 0V, TC = 125C) 250 Gate-Source Leakage Current (VGS = 20V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1.0mA) UNIT Ohms A 100 nA 4 Volts 2 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. USA 405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364 F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61 EUROPE Avenue J.F. Kennedy Bat B4 Parc Cadera Nord 050-5578 Rev A Symbol DYNAMIC CHARACTERISTICS Symbol APT1001RSVR Characteristic Test Conditions TYP MAX V GS = 0V 3050 3660 VDS = 25V 280 390 135 200 Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance f = 1 MHz Qg Total Gate Charge Q gs 3 VGS = 10V 150 225 V DD = 0.5 VDSS 16 24 ID = ID[Cont.] @ 25C 70 105 Gate-Source Charge Qgd Gate-Drain ("Miller ") Charge td(on) Turn-on Delay Time tr VGS = 15V 12 24 V DD = 0.5 VDSS 11 22 ID = ID[Cont.] @ 25C 55 85 R G = 1.6 12 24 TYP MAX Rise Time td(off) Turn-off Delay Time tf MIN Fall Time UNIT pF nC ns SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions IS ISM MIN 11 Continuous Source Current (Body Diode) Pulsed Source Current 1 (Body Diode) V SD Diode Forward Voltage 2 (VGS = 0V, IS = -ID[Cont.]) t Reverse Recovery Time (IS = -ID[Cont.], dlS /dt = 100A/s) rr Q rr 44 1.3 UNIT Amps Volts 700 ns 9 C Reverse Recovery Charge (IS = -ID[Cont.], dl S/dt = 100A/s) THERMAL CHARACTERISTICS Symbol Characteristic MIN R JC Junction to Case RJA Junction to Ambient TYP MAX 0.45 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% 40 3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 20mH, R = 25, Peak I = 11A j G L APT Reserves the right to change, without notice, the specifications and information contained herein. D=0.5 0.1 0.05 0.2 0.1 0.05 Note: 0.01 SINGLE PULSE JC 0.005 PDM 0.02 0.01 t1 t2 Duty Factor D = t1/t 2 Peak TJ = PDM x ZJC + TC Z 050-5578 Rev A , THERMAL IMPEDANCE (C/W) 0.5 0.001 10-5 10-4 10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION UNIT C/W APT1001RSVR 20 VGS=6V, 10V & 15V ID, DRAIN CURRENT (AMPERES) 16 12 4.5V 8 4 4V 16 12 4.5V 8 4 4V 3.5V 0 0 100 200 300 400 500 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS TJ = +125C 20 TJ = +125C 10 TJ = -55C T J = +25C 0 0 2 4 6 8 V , GATE-TO-SOURCE VOLTAGE (VOLTS) GS FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS ID, DRAIN CURRENT (AMPERES) 12 10 8 6 4 2 0 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 25 R DS(ON), DRAIN-TO-SOURCE ON RESISTANCE V DS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE 30 1.5 TJ = 25C 2SEC. PULSE TEST @ < 0.5 % DUTY CYCLE NORMALIZED TO V = 10V @ 0.5 I [Cont.] 1.4 GS D VGS =10V 1.2 VGS=20V 1.0 0.8 0 5 10 15 20 25 30 I , DRAIN CURRENT (AMPERES) D FIGURE 5, R (ON) vs DRAIN CURRENT DS BVDSS(ON), DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) TJ = -55C 3.5V 0 4 8 12 16 20 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS 0 1.15 1.10 1.05 1.00 0.95 0.90 -25 0 25 50 75 100 125 150 TJ , JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 2.5 -50 1.2 I = 0.5 I [Cont.] D D V GS = 10V 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ , JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) ID, DRAIN CURRENT (AMPERES) 40 VGS =15V VGS=6V & 10V 5V 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 050-5578 Rev A ID, DRAIN CURRENT (AMPERES) 20 APT1001RSVR 11,000 10S OPERATION HERE LIMITED BY RDS (ON) 100S C, CAPACITANCE (pF) 5 1mS 10mS 1 .5 100mS T C =+25C T J =+150C SINGLE PULSE DC D VDS=100V VDS=200V 12 VDS =500V 8 4 50 TJ =+150C 5 1 .5 .1 I 0 50 100 150 200 250 300 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE TJ =+25C 10 DR GS V C rss , REVERSE DRAIN CURRENT (AMPERES) I = I [Cont.] 0 C oss 500 .01 .1 1 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE 20 16 1,000 50 1 5 10 50 100 500 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA D C iss 100 .1 , GATE-TO-SOURCE VOLTAGE (VOLTS) 5,000 10 D I , DRAIN CURRENT (AMPERES) 50 0.2 0.4 0.6 0.8 1.0 1.2 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE 3 Drain (Heat Sink) D PAK Package Outline 4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05 (.632) Revised 4/18/95 1.04 (.041) 1.15 (.045) 0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112) Revised 8/29/97 13.79 (.543) 13.99 (.551) 0.46 (.018) 0.56 (.022) {3 Plcs} 1.27 (.050) 1.40 (.055) 1.98 (.078) 2.08 (.082) 1.22 (.048) 1.32 (.052) 3.81 (.150) 4.06 (.160) (Base of Lead) Source Drain Gate Dimensions in Millimeters (Inches) APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 11.51 (.453) 11.61 (.457) Heat Sink (Drain) and Leads are Plated 5.45 (.215) BSC {2 Plcs.} 050-5578 Rev A 13.41 (.528) 13.51 (.532) 5,019,522 5,434,095 5,262,336 5,528,058