Rev 2: Nov 2004 AO3402, AO3402L ( Green Product ) N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3402 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. AO3402L( Green Product ) is offered in a lead-free package. VDS (V) = 30V ID = 4 A RDS(ON) < 55m (VGS = 10V) RDS(ON) < 70m (VGS = 4.5V) RDS(ON) < 110m (VGS = 2.5V) TO-236 (SOT-23) Top View D G D S G S Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A TA=25C Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. W 1 TJ, TSTG t 10s Steady-State Steady-State A 15 -55 to 150 Symbol A V 1.4 PD TA=70C A 12 3.4 ID IDM TA=25C Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead C Units V 4 TA=70C Pulsed Drain Current B Power Dissipation A Maximum 30 RJA RJL Typ 70 100 63 C Max 90 125 80 Units C/W C/W C/W AO3402, AO3402L Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS VGS(th) ID(ON) Gate-Body leakage current Gate Threshold Voltage RDS(ON) gFS VSD IS On state drain current Static Drain-Source On-Resistance Conditions Min ID=250A, VGS=0V VDS=24V, VGS=0V 30 Typ Max Units V 1 TJ=55C VDS=0V, VGS=12V VDS=VGS ID=250A VGS=4.5V, VDS=5V VGS=10V, ID=4A 0.6 10 TJ=125C VGS=4.5V, ID=3A VGS=2.5V, ID=2A VDS=5V, ID=4A Forward Transconductance IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance A 1 5 100 1.4 45 66 55 55 80 70 m 83 8 110 m 0.8 1 2.5 V A nA V A m S 390 54.5 pF pF pF Coss Crss Output Capacitance Reverse Transfer Capacitance VGS=0V, VDS=15V, f=1MHz Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 41 3 VGS=4.5V, VDS=15V, ID=4A 4.34 0.6 nC nC 1.38 3.3 nC ns 1 21.7 2.1 ns ns ns 12 6.3 ns nC SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) tr tD(off) tf trr Qrr Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time VGS=10V, VDS=15V, RL=3.75, RGEN=6 IF=4A, dI/dt=100A/s Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=4A, dI/dt=100A/s A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any a given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO3402, AO3402L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 15 10V 3V 12 8 VDS=5V 4.5V 6 ID(A) ID (A) 9 2.5V 6 4 125C 3 2 VGS=2V 0 25C 0 0 1 2 3 4 5 0 0.5 150 1.5 2 2.5 3 3.5 Normalized On-Resistance 1.8 125 VGS=2.5V RDS(ON) (m) 1 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics 100 75 VGS=4.5V 50 25 VGS=10V 0 1.6 VGS=4.5V VGS=10V 1.4 1.2 VGS=2.5V 1 0.8 0 2 4 6 8 10 0 25 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 200 1.0E+01 1.0E+00 ID=2A 1.0E-01 125C 100 IS (A) RDS(ON) (m) 150 125C 1.0E-02 1.0E-03 25C 1.0E-04 50 25C 1.0E-05 1.0E-06 0 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AO3402, AO3402L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 600 5 VDS=15V ID=4A 500 Capacitance (pF) VGS (Volts) 4 3 2 1 Ciss 400 300 200 Coss 100 0 0 0 1 2 3 4 5 0 Qg (nC) Figure 7: Gate-Charge Characteristics 10 15 20 25 30 20 TJ(Max)=150C TA=25C RDS(ON) limited 15 10s 100s Power (W) 10.0 5 VDS (Volts) Figure 8: Capacitance Characteristics TJ(Max)=150C TA=25C 100.0 ID (Amps) Crss 1ms 0.1s 10ms 1.0 10 1s 5 10s DC 0.1 0.1 1 10 0 0.001 100 VDS (Volts) ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=90C/W 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 0.01 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000