P35-4232-000-200 - Marconi Optical Components

Features

· Broadband performance

· Low insertion loss; 1.0dB typ at 3GHz

· Ultra low DC power consumption

· Fast switching speed; 3ns typical

· Positive or negative voltage operation

· High compression point; 34dBm typ.

Description

The P35-4232-000-200 is a high power Gallium Arsenide single pole double throw broadband RF switch MMIC. It is

suitable for use in broadband communications and instrumentation applications. A high impedance reflective termination

is presented at the isolated output of the switch. Control is effected by the application of complimentary 0V/-5V or 0/-8V

signals to the control lines in accordance with the truth table. Alternatively, positive control voltages may be used if the

Vref terminal is connected to the positive supply and decoupled to a good RF ground. In this case DC blocking capacitors

should be used in series with the input and output RF connections.

This die is fabricated using MOC's 0.5µm gate length MESFET process (S20) and is fully protected using Silicon Nitride

passivation for excellent performance and reliability. This device is also available packaged in a low-cost plastic package

or higher performance ceramic package.

Electrical Performance

Ambient temperature = 22±3°C, ZO= 50Ω, Control voltages = 0V/-5V unless otherwise stated

Notes

1. Return Loss measured in low loss switch state.

2. Input power at which insertion loss compresses by 1dB.

GaAs MMIC SPDT Reflective

Switch, DC - 6GHz

P35-4232-000-200 Marconi Optical Components

Parameter Conditions Min Typ Max Units

Insertion Loss DC - 3GHz -1.0 1,2 dB

3 - 6GHz -2.0 2.5 dB

Isolation DC - 3GHz 20 22 -dB

3 - 6GHz 17 20 -dB

Input Return Loss1DC - 3GHz 15 18 -dB

3 - 6GHz 10 12 -dB

Output Return Loss1DC - 3GHz 15 16 -dB

3 - 6GHz 10 15 -dB

1dB power compression point20/-5V Control; 2GHz -34 -dBm

0/-8V Control; 2GHz -35 -dBm

Switching Speed 50% Control to 10%90%RF -3-ns

Typical Performance at 22°C

Absolute Maximum Ratings

Max Vref voltage +8V

Max control voltage Vref - 8V

Max I/P power +33 dBm

Operating temperature -60°C to +125°C

Storage temperature -65°C to +150°C

Insertion Loss Isolation

Input Return Loss Output Return Loss

P35-4232-000-200 Marconi Optical Components

Chip Outline Electrical Schematic

Switching Truth Table (Vref = 0V)

Pin Details

Chip Handling, Mounting and Bonding

Pin Function

1RF IN

2Control B

3RF2

4Vref

5RF1

6Control A

A B RF IN-RF1 RF IN-RF 2

0V -5V Low loss Isolated

-5V 0V Isolated Low Loss

Switching Truth Table (Vref = 5V)

A B RF IN-RF1 RF IN-RF 2

5V 0V Low loss Isolated

0V 5V Isolated Low Loss

Die size 1.07 x 0.61mm

Bond pad size 100µm x 100µm

Die thickness: 210µm

The back of the chip is gold metallized and can be die-attached manually onto gold, eutectically with Au-Sn (80:20) or with

low temperature conductive epoxy. The maximum allowable chip temperature is 310°C for 2 minutes. Bonds should be

made onto the exposed gold pads with 17 or 25 microns pure gold, half-hard gold wire. Bonding should be achieved with

the chip face at 225°C to 275°C with a heated thermosonic wedge (approx. 125°C) and a maximum force of 60 grams.

Ball bonds may be used but care must be taken to ensure the ball size is compatible with the bonding pads shown. The

length of the bond wires should be minimised to reduce parasitic inductance, particularly those to the RF and ground

pads.

The data and product specifications are subject to change without notice. These devices

should not be used for device qualification and production without prior notice.

MOC, Caswell, Towcester, Northants, NN12 8EQ, Tel:+44 1327 356468 Fax +44 1327 356698

462/SM/01746/200 Iss 1/2

Ordering Information: P35-4232-000-200