DMN6013LFGQ 60V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 Product Summary RDS(ON) max ID max TA = +25C 13m @ VGS = 10V 10.3A 18m @ VGS = 4.5V 8.8A BVDSS 60V Features and Benefits Low RDS(ON) - Ensures on state losses are minimized Small form factor thermally efficient package enables higher density end products Occupies just 33% of the board area occupied by SO-8 enabling smaller end product Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Description and Applications This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: Motor Control DC to DC Converters Reverse Polarity Protection Mechanical Data (R) Case: PowerDI 3333-8 Case Material: Molded Plastic, "Green" Molding Compound, UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See Diagram Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.072 grams (Approximate) PowerDI3333-8 D Pin 1 S S S G G D D D D S Bottom View Top View Equivalent Circuit Ordering Information (Note 5) Part Number DMN6013LFGQ-7 DMN6013LFGQ-13 Notes: Case PowerDI3333-8 PowerDI3333-8 Packaging 2,000/Tape & Reel 3,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to https://www.diodes.com/quality/. 5. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. YYWW Marking Information N63 = Product Type Marking Code YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 18 = 2018) WW = Week Code (01 to 53) N63 PowerDI is a registered trademark of Diodes Incorporated. DMN6013LFGQ Document number: DS38870 Rev. 2 - 2 1 of 7 www.diodes.com June 2018 (c) Diodes Incorporated DMN6013LFGQ Maximum Ratings (@TA = +25C, unless otherwise specified.) Characteristic Symbol Drain-Source Voltage VDSS Gate-Source Voltage Continuous Drain Current (Note 7) VGS = 10V Value 60 Unit V VGSS 20 V TA = +25C TA = +70C ID 10.3 8.3 A TC = +25C TC = +100C ID 45 28 A Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) IDM IS 58.3 A Maximum Continuous Body Diode Forward Current (Note 7) 3 A Avalanche Current, L = 0.1mH IAS 33.3 A Avalanche Energy, L = 0.1mH EAS 56.8 mJ Thermal Characteristics (@TA = +25C, unless otherwise specified.) Characteristic Symbol Total Power Dissipation (Note 6) Value 1 123 69 2.1 60 34 40 PD Steady State t < 10s Thermal Resistance, Junction to Ambient (Note 6) RJA Total Power Dissipation (Note 7) PD Steady State t < 10s Thermal Resistance, Junction to Ambient (Note 7) RJA Total Power Dissipation (Note 7) PD Thermal Resistance, Junction to Case (Note 7) RJC TJ, TSTG Operating and Storage Temperature Range Unit W C/W W C/W W 3.2 C/W -55 to +150 C Electrical Characteristics (@TA = +25C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Symbol Min Typ Max BVDSS 60 -- -- V VGS = 0V, ID = 250A IDSS -- -- 1 A VDS = 60V, VGS = 0V IGSS -- -- 100 nA VGS = 20V, VDS = 0V VGS(TH) 1 1.8 3 V VDS = VGS, ID = 250A RDS(ON) -- -- 9.3 12.3 13 18 m VSD -- 0.7 1.2 V Ciss Coss -- -- 2577 -- -- pF Output Capacitance Reverse Transfer Capacitance Crss -- pF Rg -- 132 0.9 -- Gate Resistance -- Total Gate Charge (VGS = 4.5V) Qg -- 26.6 -- nC nC nC Zero Gate Voltage Drain Current, TJ = +25C Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Static Drain-Source On-Resistance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Total Gate Charge (VGS = 10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Notes: 162 Unit pF Qg -- 55.4 -- Qgs Qgd -- -- 9.3 12.6 -- -- tD(ON) -- 6.2 -- ns tR -- 9.9 -- ns tD(OFF) -- -- 27.6 11.7 -- -- ns ns -- 9.4 -- ns -- 18.6 -- nC tF tRR QRR Test Condition VGS = 10V, ID = 10A VGS = 4.5V, ID = 8A VGS = 0V, IS = 1.7A VDS = 30V, VGS = 0V, f = 1MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = 30V, ID = 10A nC VGS = 10V, VDS = 30V, RG = 3, ID = 10A IF = 10A, di/dt = 100A/s 6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. DMN6013LFGQ Document number: DS38870 Rev. 2 - 2 2 of 7 www.diodes.com June 2018 (c) Diodes Incorporated DMN6013LFGQ 30 30 25 VGS = 4.5V 24 VGS = 4.0V 21 )A ( T 20 N E R R U 15 C N IA R D 10 ,D I ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VDS = 5.0V VGS = 10V 27 18 15 VGS = 3.5V 12 9 6 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.012 0.01 VGS = 10V 0.008 R 0.002 0 5 10 15 20 25 ID, DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 30 1 TA = 25C 1.5 2 2.5 3 3.5 4 4.5 VGS , GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 5 0.03 ID = 10A 0.025 ID = 8mA 0.02 0.015 0.01 0.005 0 2 4 6 8 10 12 14 16 18 20 VGS, GATE-SOURCE VOLTAGE (V) Figure 4 Typical Drain-Source On-Resistance vs. Gate-Source Voltage 2.2 V GS = 10V 0.022 TA = 125C 0.018 0.016 TA = 85C 0.014 0.012 T A = 25C 0.01 0.008 TA = -55C 0.006 VGS = 10V ID = 10A 2 TA = 150C 0.02 0.004 0 0 3 VGS = 4.5V 0.024 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.5 1 1.5 2 2.5 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics 0.014 0.006 TA = 85C TA = -55C RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) R DS(ON), DRAIN-SOURCE ON-RESISTANCE () VGS = 3.0V ) ( E C N A T S IS E R -N O E C R U O S -N I A R D , )N O (S D TA = 125C 5 3 0 TA = 150C 1.8 1.6 VGS = 4.5V ID = 8A 1.4 1.2 1 0.8 0.6 0 2 4 6 8 10 12 14 16 18 ID , DRAIN CURRENT (A) Figure 5 Typical On-Resistance vs. Drain Current and Temperature DMN6013LFGQ Document number: DS38870 Rev. 2 - 2 20 3 of 7 www.diodes.com 0.4 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 6 On-Resistance Variation with Temperature June 2018 (c) Diodes Incorporated DMN6013LFGQ 2.4 )V ( E G A T L O V D L O H S E R H T E T A G , h) VGS(TH), GATE THRESHOLD VOLTAGE (V) R DS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.028 0.024 VGS = 4.5V ID = 8A 0.02 0.016 VGS = 10V ID = 10A 0.012 0.008 0.004 2.2 2 ID = 1mA 1.8 1.6 1.4 1.2 t( S G 1 V 0 -50 0.8 -50 -25 0 25 50 75 100 125 150 TJ , JUNCTION TEMPERATURE (C) Figure 8 Gate Threshold Variation vs. Junction Temperature -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( C) Figure 7 On-Resistance Variation with Temperature 10000 CT, JUNCTION CAPACITANCE (pF) 30 25 IS, SOURCE CURRENT (A) ) A ( T N 20 E R R U C 15 E C R U O 10 S ,S I 5 0 TA = 150C TA = 125C TA = 25C TA = 85C TA = -55C f = 1MHz Ciss 1000 Coss 100 Crss 10 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD , SOURCE-DRAIN VOLTAGE (V) Figure 9 Diode Forward Voltage vs. Current 0 5 10 15 20 25 30 35 40 45 50 55 60 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10 Typical Junction Capacitance 10 100 R DS(ON) Limited 10 8 ) A ( T N E R R U C N I A R D ,D I ID, DRAIN CURRENT (A) GS, GATE-SOURCE VOLTAGE (V) VVGS GATE THRESHOLD VOLTAGE (V) ID = 250A 6 VDS = 30V ID = 10A 4 0 6 12 18 24 30 36 42 48 54 Qg, TOTAL GATE CHARGE (nC) Figure 11 Gate Charge DMN6013LFGQ Document number: DS38870 Rev. 2 - 2 60 PW = 10s 1 P W= 1s PW= 100ms PW= 10ms 0.1 PW = 1ms 0.01 2 0 DC TJ(max) = 150C TA = 25C VGS = 10V Single Pulse DUT on 1 * MRP Board 0.001 0.01 4 of 7 www.diodes.com PW = 100s 0.1 1 10 VDS , DRAIN-SOURCE VOLTAGE (V) Figure 12 SOA, Safe Operation Area 100 June 2018 (c) Diodes Incorporated DMN6013LFGQ 1 D = 0.9 D = 0.7 r(t), TRANSIENT THERMAL RESISTANCE D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 RJA RJA R (t)(t)= =r(t)r(t) * R*JA JA R == 126/W RJA 126 /W JA Duty Cycle, D = t1/t2 Duty Cycle, D = t1/ t2 D = Single Pulse 0.001 0.0001 DMN6013LFGQ Document number: DS38870 Rev. 2 - 2 0.001 0.01 0.1 1 10 t1, PULSE DURATION TIME (sec) Figure 13 Transient Thermal Resistance 5 of 7 www.diodes.com 100 1000 June 2018 (c) Diodes Incorporated DMN6013LFGQ Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. PowerDI3333-8 A3 A1 A Seating Plane D L(4x) D2 1 Pin #1 ID E4 b2(4x) E E3 E2 L1(3x) 8 z(4x) PowerDI3333-8 Dim Min Max Typ A 0.75 0.85 0.80 A1 0.00 0.05 0.02 A3 0.203 b 0.27 0.37 0.32 b2 0.15 0.25 0.20 D 3.25 3.35 3.30 D2 2.22 2.32 2.27 E 3.25 3.35 3.30 E2 1.56 1.66 1.61 E3 0.79 0.89 0.84 E4 1.60 1.70 1.65 e 0.65 L 0.35 0.45 0.40 L1 0.39 z 0.515 All Dimensions in mm b e Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. PowerDI3333-8 X3 8 Y2 X2 Dimensions Value (in mm) C 0.650 X 0.420 X1 0.420 X2 0.230 X3 2.370 Y 0.700 Y1 1.850 Y2 2.250 Y3 3.700 Y4 0.540 Y4 X1 Y1 Y3 Y 1 X DMN6013LFGQ Document number: DS38870 Rev. 2 - 2 C 6 of 7 www.diodes.com June 2018 (c) Diodes Incorporated DMN6013LFGQ IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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